JPS60212900A - Semiconductor fixed memory - Google Patents

Semiconductor fixed memory

Info

Publication number
JPS60212900A
JPS60212900A JP7041484A JP7041484A JPS60212900A JP S60212900 A JPS60212900 A JP S60212900A JP 7041484 A JP7041484 A JP 7041484A JP 7041484 A JP7041484 A JP 7041484A JP S60212900 A JPS60212900 A JP S60212900A
Authority
JP
Japan
Prior art keywords
circuit
rewriting frequency
rewriting
cell block
respective cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7041484A
Inventor
Tokiaki Azuma
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP7041484A priority Critical patent/JPS60212900A/en
Publication of JPS60212900A publication Critical patent/JPS60212900A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To use a circuit having high rewriting frequency and to simplify a control circuit by forming a rewriting frequency setting circuit in a chip, and when the rewriting frequency exceeds a prescribed value, switching a memory cell block to the succeeding one.
CONSTITUTION: Respective cell blocks 100W103 in the memory 1 are selected by the rewriting frequency deciding circuit 2 and the same locations in respective cell blocks are simultaneously addressed from the external. Since the maximum value N of rewriting frequency of the EEPROM is set up, the same address in the cell block 101 is newly selected after ending the Nth rewriting of the same address in the cell block 100. Said control is automatically executed by a detecting circuit 2 and a write control circuit 3. Data in respective cell blocks 100W103 are outputted through an OR circuit 4.
COPYRIGHT: (C)1985,JPO&Japio
JP7041484A 1984-04-09 1984-04-09 Semiconductor fixed memory Pending JPS60212900A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7041484A JPS60212900A (en) 1984-04-09 1984-04-09 Semiconductor fixed memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7041484A JPS60212900A (en) 1984-04-09 1984-04-09 Semiconductor fixed memory

Publications (1)

Publication Number Publication Date
JPS60212900A true JPS60212900A (en) 1985-10-25

Family

ID=13430785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7041484A Pending JPS60212900A (en) 1984-04-09 1984-04-09 Semiconductor fixed memory

Country Status (1)

Country Link
JP (1) JPS60212900A (en)

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62283496A (en) * 1986-05-31 1987-12-09 Canon Inc Management system for of number of times of writing programmable read only memory
JPS62283497A (en) * 1986-05-31 1987-12-09 Canon Inc Management system for of number of times of writing programmable read only memory
JPS63292496A (en) * 1987-05-25 1988-11-29 Seiko Instr & Electronics Ltd Semiconductor nonvolatile memory device
JPS6462900A (en) * 1987-09-02 1989-03-09 Hitachi Ltd Method for evaluating nonvolatile storage element and data processor using it
JPH01109596A (en) * 1987-10-22 1989-04-26 Fuji Electric Co Ltd Method for data writing in eeprom
JPH06302194A (en) * 1993-01-20 1994-10-28 Canon Inc Information processor
JPH06338195A (en) * 1993-05-31 1994-12-06 Nec Corp Device for managing number of writing times of electrically erasable nonvolatile memory
US5568439A (en) * 1988-06-08 1996-10-22 Harari; Eliyahou Flash EEPROM system which maintains individual memory block cycle counts
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6850443B2 (en) 1991-09-13 2005-02-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system
JP2011028793A (en) * 2009-07-22 2011-02-10 Toshiba Corp A semiconductor memory device
US8040727B1 (en) 1989-04-13 2011-10-18 Sandisk Corporation Flash EEprom system with overhead data stored in user data sectors
US8694722B2 (en) 2001-09-28 2014-04-08 Micron Technology, Inc. Memory systems
US9026721B2 (en) 1995-07-31 2015-05-05 Micron Technology, Inc. Managing defective areas of memory
US9032134B2 (en) 2001-09-28 2015-05-12 Micron Technology, Inc. Methods of operating a memory system that include outputting a data pattern from a sector allocation table to a host if a logical sector is indicated as being erased
US9213606B2 (en) 2002-02-22 2015-12-15 Micron Technology, Inc. Image rescue
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62283496A (en) * 1986-05-31 1987-12-09 Canon Inc Management system for of number of times of writing programmable read only memory
JPS62283497A (en) * 1986-05-31 1987-12-09 Canon Inc Management system for of number of times of writing programmable read only memory
JPS63292496A (en) * 1987-05-25 1988-11-29 Seiko Instr & Electronics Ltd Semiconductor nonvolatile memory device
JPS6462900A (en) * 1987-09-02 1989-03-09 Hitachi Ltd Method for evaluating nonvolatile storage element and data processor using it
JPH01109596A (en) * 1987-10-22 1989-04-26 Fuji Electric Co Ltd Method for data writing in eeprom
US5862081A (en) * 1988-06-08 1999-01-19 Harari; Eliyahou Multi-state flash EEPROM system with defect management including an error correction scheme
US5712819A (en) * 1988-06-08 1998-01-27 Harari; Eliyahou Flash EEPROM system with storage of sector characteristic information within the sector
US5568439A (en) * 1988-06-08 1996-10-22 Harari; Eliyahou Flash EEPROM system which maintains individual memory block cycle counts
US5835415A (en) * 1988-06-08 1998-11-10 Harari; Eliyahou Flash EEPROM memory systems and methods of using them
US5909390A (en) * 1988-06-08 1999-06-01 Harari; Eliyahou Techniques of programming and erasing an array of multi-state flash EEPROM cells including comparing the states of the cells to desired values
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system
US8040727B1 (en) 1989-04-13 2011-10-18 Sandisk Corporation Flash EEprom system with overhead data stored in user data sectors
US6373747B1 (en) 1989-04-13 2002-04-16 Sandisk Corporation Flash EEprom system
US5936971A (en) * 1989-04-13 1999-08-10 Sandisk Corporation Multi-state flash EEprom system with cache memory
US6850443B2 (en) 1991-09-13 2005-02-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US7353325B2 (en) 1991-09-13 2008-04-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
JPH06302194A (en) * 1993-01-20 1994-10-28 Canon Inc Information processor
JPH06338195A (en) * 1993-05-31 1994-12-06 Nec Corp Device for managing number of writing times of electrically erasable nonvolatile memory
US6393513B2 (en) 1995-07-31 2002-05-21 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US9026721B2 (en) 1995-07-31 2015-05-05 Micron Technology, Inc. Managing defective areas of memory
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6172906B1 (en) 1995-07-31 2001-01-09 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6223308B1 (en) 1995-07-31 2001-04-24 Lexar Media, Inc. Identification and verification of a sector within a block of mass STO rage flash memory
US6128695A (en) * 1995-07-31 2000-10-03 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6912618B2 (en) 1995-07-31 2005-06-28 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6145051A (en) * 1995-07-31 2000-11-07 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6327639B1 (en) 1997-12-11 2001-12-04 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6134151A (en) * 1999-04-01 2000-10-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US9032134B2 (en) 2001-09-28 2015-05-12 Micron Technology, Inc. Methods of operating a memory system that include outputting a data pattern from a sector allocation table to a host if a logical sector is indicated as being erased
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
US9489301B2 (en) 2001-09-28 2016-11-08 Micron Technology, Inc. Memory systems
US8694722B2 (en) 2001-09-28 2014-04-08 Micron Technology, Inc. Memory systems
US9213606B2 (en) 2002-02-22 2015-12-15 Micron Technology, Inc. Image rescue
US10049207B2 (en) 2004-04-30 2018-08-14 Micron Technology, Inc. Methods of operating storage systems including encrypting a key salt
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed
JP2011028793A (en) * 2009-07-22 2011-02-10 Toshiba Corp A semiconductor memory device
US8687420B2 (en) 2009-07-22 2014-04-01 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device

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