JPS60208852A - Semiconductor solid circuit element - Google Patents

Semiconductor solid circuit element

Info

Publication number
JPS60208852A
JPS60208852A JP59065159A JP6515984A JPS60208852A JP S60208852 A JPS60208852 A JP S60208852A JP 59065159 A JP59065159 A JP 59065159A JP 6515984 A JP6515984 A JP 6515984A JP S60208852 A JPS60208852 A JP S60208852A
Authority
JP
Japan
Prior art keywords
film
amorphous diamond
interlayer insulating
heat
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59065159A
Other languages
Japanese (ja)
Inventor
Masao Nakao
Original Assignee
Agency Of Ind Science & Technol
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Of Ind Science & Technol filed Critical Agency Of Ind Science & Technol
Priority to JP59065159A priority Critical patent/JPS60208852A/en
Publication of JPS60208852A publication Critical patent/JPS60208852A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02488Insulating materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • H01L21/02598Microstructure monocrystalline
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221Three dimensional integrated circuits stacked in different levels
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732Diamonds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06524Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06589Thermal management, e.g. cooling

Abstract

PURPOSE:To enhance the emission rate of heat and to improve the integration degree of an element, by forming interlayer insulating films between a plurality of active layers by amorphous diamond. CONSTITUTION:Impurities are diffused in a silicon substrate 1, which is the lowermost active layer, and active regions 2 such as a source, a drain and the like are formed. Then a wiring single crystal silicon film 3 having a specified pattern is formed. Then C<+> ions are projected on the substrate 1, and an interlayer insulating film 4 comprising amorphous diamond is formed on the substrate 1 and the film 3. Then amorphous silicon is formed on the film 4 and the single crystal thereof is formed. Thus the next active layer 5 is formed. An interlayer insulating film 4 comprising the amorphous diamond is formed on the layer 5. The procedure such as this is sequentially repeated. On a topmost active layer 5, a surface protecting film 6 comprising the amorphous diamond is laminated. The heat conductivities of the film 4 and the film 6 are very high. The emission rate of the heat can be enhanced and the temperature increase can be suppressed.
JP59065159A 1984-04-03 1984-04-03 Semiconductor solid circuit element Pending JPS60208852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59065159A JPS60208852A (en) 1984-04-03 1984-04-03 Semiconductor solid circuit element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59065159A JPS60208852A (en) 1984-04-03 1984-04-03 Semiconductor solid circuit element

Publications (1)

Publication Number Publication Date
JPS60208852A true JPS60208852A (en) 1985-10-21

Family

ID=13278821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59065159A Pending JPS60208852A (en) 1984-04-03 1984-04-03 Semiconductor solid circuit element

Country Status (1)

Country Link
JP (1) JPS60208852A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0317124A2 (en) * 1987-11-16 1989-05-24 Crystallume Silicon on insulator semiconductor components containing thin synthetic diamond films
JPH0223639A (en) * 1988-07-13 1990-01-25 Fujitsu Ltd Diamond multilayer circuit substrate
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
US5087959A (en) * 1987-03-02 1992-02-11 Microwave Technology, Inc. Protective coating useful as a passivation layer for semiconductor devices
EP0553904A1 (en) * 1992-01-28 1993-08-04 International Business Machines Corporation Thermal dissipation of integrated circuits using diamond paths
FR2713827A1 (en) * 1993-12-07 1995-06-16 Thomson Csf Semiconductor device with integrated cooling device
EP0661740A2 (en) * 1993-12-30 1995-07-05 Saint-Gobain/Norton Industrial Ceramics Corporation Thermal management of electronic components using synthetic diamond
US5698901A (en) * 1994-09-12 1997-12-16 Nec Corporation Semiconductor device with amorphous carbon layer for reducing wiring delay
JP2001203429A (en) * 2000-01-19 2001-07-27 Japan Fine Ceramics Center Diamond wiring substrate and its manufacturing method
EP1432032A2 (en) * 2002-12-19 2004-06-23 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor chip stack and method for manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145134A (en) * 1982-02-23 1983-08-29 Seiko Epson Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145134A (en) * 1982-02-23 1983-08-29 Seiko Epson Corp Semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
US5087959A (en) * 1987-03-02 1992-02-11 Microwave Technology, Inc. Protective coating useful as a passivation layer for semiconductor devices
EP0317124A2 (en) * 1987-11-16 1989-05-24 Crystallume Silicon on insulator semiconductor components containing thin synthetic diamond films
JPH0223639A (en) * 1988-07-13 1990-01-25 Fujitsu Ltd Diamond multilayer circuit substrate
EP0553904A1 (en) * 1992-01-28 1993-08-04 International Business Machines Corporation Thermal dissipation of integrated circuits using diamond paths
FR2713827A1 (en) * 1993-12-07 1995-06-16 Thomson Csf Semiconductor device with integrated cooling device
EP0661740A3 (en) * 1993-12-30 1996-01-24 Saint Gobain Norton Ind Cerami Thermal management of electronic components using synthetic diamond.
EP0661740A2 (en) * 1993-12-30 1995-07-05 Saint-Gobain/Norton Industrial Ceramics Corporation Thermal management of electronic components using synthetic diamond
US5698901A (en) * 1994-09-12 1997-12-16 Nec Corporation Semiconductor device with amorphous carbon layer for reducing wiring delay
US6033979A (en) * 1994-09-12 2000-03-07 Nec Corporation Method of fabricating a semiconductor device with amorphous carbon layer
JP2001203429A (en) * 2000-01-19 2001-07-27 Japan Fine Ceramics Center Diamond wiring substrate and its manufacturing method
EP1432032A2 (en) * 2002-12-19 2004-06-23 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor chip stack and method for manufacturing the same
EP1432032A3 (en) * 2002-12-19 2013-05-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor chip stack and method for manufacturing the same

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