JPS60195445A - Ph measuring electrode - Google Patents
Ph measuring electrodeInfo
- Publication number
- JPS60195445A JPS60195445A JP59052656A JP5265684A JPS60195445A JP S60195445 A JPS60195445 A JP S60195445A JP 59052656 A JP59052656 A JP 59052656A JP 5265684 A JP5265684 A JP 5265684A JP S60195445 A JPS60195445 A JP S60195445A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- iridium
- electrode
- response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/302—Electrodes, e.g. test electrodes; Half-cells pH sensitive, e.g. quinhydron, antimony or hydrogen electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は州測定電極に係り、特に新規かつ有用な応答膜
を備えた…測定電極に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a measuring electrode, and more particularly to a measuring electrode equipped with a novel and useful response membrane.
従来よシ…測定電極(以下、測定電極という)の応答膜
には、ガラスが用いられていた。しかし、ガラスはフッ
化水素酸(HF、以下フッ酸という)に腐食され易いこ
と、抵抗値が高いため測定電極の端部に応答膜を封止す
る場合、通常の接着剤を使用することができず、ガラス
封正方法によって行なわなければならないところから、
応答膜付近の絶縁に細心の注意を払う必要があった。Conventionally, glass has been used for the response membrane of the measurement electrode (hereinafter referred to as measurement electrode). However, since glass is easily corroded by hydrofluoric acid (HF, hereinafter referred to as hydrofluoric acid) and has a high resistance value, it is difficult to use ordinary adhesives when sealing the response membrane at the end of the measurement electrode. Since this is not possible and must be done using a glass sealing method,
It was necessary to pay close attention to the insulation near the response membrane.
そこで本発明者は上記従来技術の欠点を解消すべく種々
研究の結果、化学的に安定で酸(フッ酸を含む)におか
されない酸化イリジウム、酸化パラジウムよりなる薄膜
が州に応答する事実に着目し、従来の田計にすぐ適用で
きる構成にして本発明を完成したもので1本発明は耐フ
ツ酸性に優れた化学的、機械的に安定で、かつ製作の容
易な測定電極を提供することを目的としている。Therefore, as a result of various studies in order to eliminate the drawbacks of the above-mentioned conventional techniques, the present inventors focused on the fact that thin films made of iridium oxide and palladium oxide, which are chemically stable and are not affected by acids (including hydrofluoric acid), respond to conditions. However, the present invention has been completed with a configuration that can be immediately applied to conventional rice meters.1.The present invention provides a measuring electrode that is chemically and mechanically stable, has excellent hydroacid resistance, and is easy to manufacture. It is an object.
〔発明の構成]
内極と内部液と…応答膜を有する州測定電極において、
基板の表面に、主としてイリジウム又はパラジウムの酸
化物よりなる薄膜を形成したものを応答膜としたことを
特徴としている。[Structure of the invention] In a state measurement electrode having an inner electrode, an internal liquid, and a response membrane,
It is characterized in that a thin film mainly made of iridium or palladium oxide is formed on the surface of a substrate as a response film.
以下、本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
第1図は本発明に係る測定電極の要部を拡大して示した
もので、1は樹脂等より成る支持管、2はガラスより成
る内筒である。3は内部電極で例えば白金線に塩化銀を
固着した銀線を溶接したもので、4は白金よりなるリー
ド線である。5は内部液で、例えば塩化カリウム水溶液
であり、ここまでの構成は従来のこの種測定電極と何ら
変わるところはない。FIG. 1 is an enlarged view of the main parts of the measuring electrode according to the present invention, where 1 is a support tube made of resin or the like, and 2 is an inner cylinder made of glass. Reference numeral 3 designates an internal electrode, for example, a silver wire to which silver chloride is adhered is welded to a platinum wire, and 4 represents a lead wire made of platinum. Reference numeral 5 denotes an internal liquid, such as an aqueous potassium chloride solution, and the configuration up to this point is no different from conventional measuring electrodes of this type.
6は前記支持管lの底部開口を封止する如く設けられる
応答膜で、開口周端部1aに接着剤7により固定されて
いる。なお、8は必要により設けられるパツキンである
。Reference numeral 6 denotes a response membrane provided to seal the bottom opening of the support tube 1, and is fixed to the opening peripheral end 1a with an adhesive 7. Note that 8 is a gasket provided as necessary.
本実施例の前記応答膜6は、従来のガラス製のものと異
なり、基板6aの両面(図中、A、Bで示す)に耐フツ
酸の優れた、主としてイリジウム又はパラジウムの酸化
物よりなる薄膜6b、6Cが形成されている。すなわち
、基板6aの内部液5に接する面A及び州濃度測定対象
である被検液に接する而Bのいずれにも前記薄膜61)
+ 60が形成されている。The response membrane 6 of this embodiment is different from conventional ones made of glass, and is made of mainly iridium or palladium oxide, which has excellent hydrofluoric acid resistance, on both sides of the substrate 6a (indicated by A and B in the figure). Thin films 6b and 6C are formed. That is, the thin film 61) is applied to both the surface A of the substrate 6a that is in contact with the internal liquid 5 and the surface B that is in contact with the test liquid that is the target of concentration measurement.
+60 is formed.
なお、応答物質としては
(1)イリジウム酸化物(Ir0り
(2)パラジウム酸化物(PdO)
(3)イリジウムと金(Au)、白金(Pt)、パラジ
ウム(Pd)等の貴金属との合金の酸化物(イリジウム
を10%以上含む)
(4)パラジウムと金、白金、イリジウム等の貴金属と
の合金の酸化物(パラジウムを10チ以上含む)
があげられる。The responding substances include (1) iridium oxide (Ir0), (2) palladium oxide (PdO), and (3) alloys of iridium and noble metals such as gold (Au), platinum (Pt), and palladium (Pd). Oxides (containing 10% or more of iridium) (4) Oxides (containing 10% or more of palladium) of alloys of palladium and noble metals such as gold, platinum, and iridium.
次に、イリジウム(Ir)の酸化物、例えば酸化イリジ
ウム(IrO2X例にとって、上記応答膜6の製法、構
造について説明する。Next, for an oxide of iridium (Ir), for example, iridium oxide (IrO2X), the manufacturing method and structure of the response film 6 will be described.
まず、基板6aが金属など導電性物質より成るときは、
第2図(a)に示すように、基板(1〜211tM)6
aの両面に反応性スパッタリング等により酸化イリジウ
ムより成る薄膜5b、5cを形成する。このとき薄膜6
b、(、cの膜厚は1000人〜3000人が好適であ
る。そして、基板6aに薄膜6b l 60を形成した
ものを、切断、打抜き又は超音波加工により第2図(b
)に示す如き所定寸法のベレットに整形する。First, when the substrate 6a is made of a conductive material such as metal,
As shown in FIG. 2(a), the substrate (1 to 211 tM) 6
Thin films 5b and 5c made of iridium oxide are formed on both sides of a by reactive sputtering or the like. At this time, the thin film 6
The film thicknesses of b, (, and c are preferably 1,000 to 3,000. Then, the thin film 6b l 60 formed on the substrate 6a is cut, punched, or ultrasonic-processed to form the thin film shown in FIG. 2 (b).
) Shape it into a pellet of predetermined dimensions as shown in ().
上記基板用の金属としては、白金(Pt)、クローム(
Cr )、タンタル(Ta)等酸化イリジウムとの密着
性が良好なものが選ばれる。The metals for the above substrate include platinum (Pt), chromium (
A material with good adhesion to iridium oxide, such as Cr) or tantalum (Ta), is selected.
基板6aけ必らずしも導電性物質である必要はなく、例
えばサファイヤアルミナ、ガラス等の如き非導電性物質
であってもよい。この場合は、第3図に示すように、例
えば基板6aの側部に導電路6dを形成し、両面の薄膜
51) 、 6Qが同電位となるようにしておく。又、
第4図に示すように、基板6aに金属膜6θを施し、そ
の外側に薄膜6b+ 6Cを形成するよう圧してもよい
。The substrate 6a is not necessarily made of a conductive material, but may be made of a non-conductive material such as sapphire alumina, glass, or the like. In this case, as shown in FIG. 3, for example, a conductive path 6d is formed on the side of the substrate 6a so that the thin films 51) and 6Q on both sides have the same potential. or,
As shown in FIG. 4, a metal film 6θ may be applied to a substrate 6a, and pressure may be applied to form a thin film 6b+6C on the outside thereof.
又、応答膜6は平板形状に限られるものではなく、支持
管lへの実装を考慮して、第5図に示すように、断面形
状が上」形であってもよい。Further, the response membrane 6 is not limited to a flat plate shape, but may have a cross-sectional shape that is upwardly shaped, as shown in FIG. 5, in consideration of mounting on the support tube 1.
なお、基板6aの両面に薄膜61) l 60を形成す
る他の方法として、例えばイリジウムの薄板の両面を熱
酸化や陽極酸化等によって酸化して所定の薄膜6b16
Cを得るようKしてもよい。なお、前記実施例では基板
の両面に応答膜を形成する例をあげたが、第6図に示す
ようにすれば、基板の片面にのみ応答膜を形成すること
もできる。同図中第1図と同一のものは同一番号を付し
ている。ここで6dは基板、6θが応答膜である。Note that another method for forming the thin film 61) l60 on both sides of the substrate 6a is to oxidize both sides of an iridium thin plate by thermal oxidation, anodic oxidation, etc. to form a predetermined thin film 6b16.
K may be used to obtain C. In the above embodiments, the response film is formed on both sides of the substrate, but as shown in FIG. 6, the response film can be formed only on one side of the substrate. Components in the figure that are the same as those in FIG. 1 are designated by the same numbers. Here, 6d is a substrate and 6θ is a response film.
又、第7図はワイヤ状の基体表面全体に応答膜を形成し
たものである。Further, FIG. 7 shows a case in which a response film is formed on the entire surface of a wire-shaped substrate.
同図中第1図と同一のものは同一番号を付している。こ
こでびは基体、鉋は基体表面に形成された応答膜で、9
はシール用のパツキン又は接着剤を示す。Components in the figure that are the same as those in FIG. 1 are designated by the same numbers. Here, the bi is the substrate, and the plane is the response membrane formed on the surface of the substrate.
indicates a packing or adhesive for sealing.
尚、前述した応答膜製造方法の他に、前記実施例の他に
基板上にイリジウムやパラジウム金属等の薄膜をスパッ
タや蒸着にて形成した後、酸化処理する方法もある。In addition to the above-described method for producing a responsive membrane, there is also a method in which a thin film of iridium, palladium, or the like is formed on a substrate by sputtering or vapor deposition, and then subjected to oxidation treatment.
この酸化処理方法を2〜3あげろと、
(11INのKOH又はNaOH中に浸漬して酸素又は
酸化雰囲気中で700〜1000°Cの温度にて熱処理
する。This oxidation treatment method can be improved a few times: (Immersion in 11 IN of KOH or NaOH and heat treatment at a temperature of 700 to 1000° C. in an oxygen or oxidizing atmosphere.
(2) K(l(とKNO,の50チずつの溶融塩中(
400〜500°Cにて)に浸漬する。(2) K(l(and KNO,
400-500°C).
(3) 800〜9000Cの酸化炎中で処理する。(3) Treat in an oxidizing flame of 800-9000C.
などがある。and so on.
(発明の効果〕
本発明に係る測定電極においては、基板の表面にイリジ
ウム又はパラジウムの酸化物よりなる薄膜を形成したも
のを応答膜として用いているから、フッ酸等を含む被検
液に測定電極を浸けてu−1濃度を測定しても、応答膜
が前記被検液によって腐食されることがなくなり、化学
的、機械的に安定な測定電極が得られるとともに、厳密
な封止作業を要することなく、例えば接着剤等によって
応答膜を支持管の開口部分に取付けることができるほか
、薄膜の導電率が大きい< o、lE%m)ので、封止
部分に高絶縁を要求されることがなく、その製作が極め
て簡単になる。(Effects of the Invention) In the measurement electrode according to the present invention, a thin film made of iridium or palladium oxide is formed on the surface of the substrate and is used as a response membrane. Even if the U-1 concentration is measured by immersing the electrode, the response membrane will not be corroded by the test liquid, and a chemically and mechanically stable measurement electrode can be obtained, as well as requiring strict sealing work. In addition, the response membrane can be attached to the opening of the support tube with adhesive, etc., without the need for high insulation. There is no problem, and its production is extremely simple.
また、用濃度測定時生ずる余分なバイアス分は両側の薄
膜によって相殺され、応答膜自体の温度ドリフト等のド
リフト成分も前記薄膜によって抑止しあう方向となるの
で測定精度が向上される。Further, the excess bias generated during the measurement of the concentration is offset by the thin films on both sides, and drift components such as temperature drift of the response membrane itself are also suppressed by the thin films, so that measurement accuracy is improved.
また本発明の測定電極は応答膜以外の構成を従来のガラ
ス電極と同様にすることによって、従来から広く用いら
れている田メータにそのまま接続して使用できる。Furthermore, the measurement electrode of the present invention can be used by being connected to a conventionally widely used field meter as is by making the structure other than the response membrane similar to that of a conventional glass electrode.
尚、本発明に係る測定電極に比較電極(さらには温度補
償電極)を一体に組み込んで複合電極とすることも可能
である。Note that it is also possible to integrally incorporate a comparison electrode (or even a temperature compensation electrode) into the measurement electrode according to the present invention to form a composite electrode.
第1図は本発明に係る田測定電極の要部断面図、実施例
を示す断面図である。
6・・・応答膜、6a・・・基板、6b、6C・・・薄
膜。
第2図
6C
第3図
特開口JGO−195445(4)
第6図
第7図
第5図
凸な−・FIG. 1 is a cross-sectional view of a main part of a field measuring electrode according to the present invention, and a cross-sectional view showing an embodiment. 6...Response membrane, 6a...Substrate, 6b, 6C...Thin film. Fig. 2 6C Fig. 3 Special opening JGO-195445 (4) Fig. 6 Fig. 7 Fig. 5 Convex
Claims (1)
基板の表面に、主としてイリジウム又はパラジウムの酸
化物よりなる薄膜を形成したものを応答膜としたことを
特徴とする州測定電極。A measurement electrode trap having an inner electrode, an internal solution, and a response membrane is placed,
A state measurement electrode characterized in that a response film is a thin film mainly made of iridium or palladium oxide formed on the surface of a substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59052656A JPS60195445A (en) | 1984-03-19 | 1984-03-19 | Ph measuring electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59052656A JPS60195445A (en) | 1984-03-19 | 1984-03-19 | Ph measuring electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60195445A true JPS60195445A (en) | 1985-10-03 |
JPH0350984B2 JPH0350984B2 (en) | 1991-08-05 |
Family
ID=12920898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59052656A Granted JPS60195445A (en) | 1984-03-19 | 1984-03-19 | Ph measuring electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60195445A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5480534A (en) * | 1990-08-22 | 1996-01-02 | Toa Electronics Ltd. | Electrode for measuring PH |
JP6054749B2 (en) * | 2011-01-07 | 2016-12-27 | 国立大学法人三重大学 | Ion selective electrode |
-
1984
- 1984-03-19 JP JP59052656A patent/JPS60195445A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5480534A (en) * | 1990-08-22 | 1996-01-02 | Toa Electronics Ltd. | Electrode for measuring PH |
US5573798A (en) * | 1990-08-22 | 1996-11-12 | Toa Electronics Ltd. | Method of manufacturing an electrode for measuring pH |
JP6054749B2 (en) * | 2011-01-07 | 2016-12-27 | 国立大学法人三重大学 | Ion selective electrode |
JP2017026637A (en) * | 2011-01-07 | 2017-02-02 | 国立大学法人三重大学 | Ion selective electrode |
Also Published As
Publication number | Publication date |
---|---|
JPH0350984B2 (en) | 1991-08-05 |
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