JPS60188952A - Position detecting device - Google Patents

Position detecting device

Info

Publication number
JPS60188952A
JPS60188952A JP59042824A JP4282484A JPS60188952A JP S60188952 A JPS60188952 A JP S60188952A JP 59042824 A JP59042824 A JP 59042824A JP 4282484 A JP4282484 A JP 4282484A JP S60188952 A JPS60188952 A JP S60188952A
Authority
JP
Japan
Prior art keywords
light
accuracy
reflected light
resist
stepped part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59042824A
Other languages
Japanese (ja)
Inventor
Naoki Ayada
Takashi Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59042824A priority Critical patent/JPS60188952A/en
Priority claimed from US06/707,864 external-priority patent/US4663534A/en
Publication of JPS60188952A publication Critical patent/JPS60188952A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7069Alignment mark illumination, e.g. darkfield, dual focus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/7076Mark details, e.g. phase grating mark, temporary mark

Abstract

PURPOSE:To improve a position matching accuracy by providing a setting means for setting the number of pieces to be selected simultaneously in each output signal of plural photodetecting parts, and selecting one prescribed photodetecting element with respect to a wafer whose accuracy is bad. CONSTITUTION:A reflected light by a prism effect of a resist is a light 71A-3 which is made incident on a resist layer and refracted, and thereafter, reflected by the surface of a wafer, refracted again to an air layer from the resist layer and emitted. This refractive reflected light 71A-3 is a light in the vicinity of a stepped part of an alignment mark, and when this light is made incident on a photodetector, the detecting accuracy of the stepped part drops. Especially, in case the wafer surface is made of aluminum, etc., an influence of the refractive reflected light is large since the reflection factor is high, and the position matching accuracy tends to get worse. Accordingly, in case of detecting the reflected light in the stepped part 71, when only a light in the direction 71C is detected without a light in the direction 71A, a light by a prism effect of a resist is not made incident on the detector, and the position detecting accuracy is improved.
JP59042824A 1984-03-08 1984-03-08 Position detecting device Pending JPS60188952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59042824A JPS60188952A (en) 1984-03-08 1984-03-08 Position detecting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59042824A JPS60188952A (en) 1984-03-08 1984-03-08 Position detecting device
US06/707,864 US4663534A (en) 1984-03-08 1985-03-04 Position detecting device utilizing selective outputs of the photodetector for accurate alignment

Publications (1)

Publication Number Publication Date
JPS60188952A true JPS60188952A (en) 1985-09-26

Family

ID=12646699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59042824A Pending JPS60188952A (en) 1984-03-08 1984-03-08 Position detecting device

Country Status (1)

Country Link
JP (1) JPS60188952A (en)

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