JPS60179605A - Method for measuring al film thickness - Google Patents

Method for measuring al film thickness

Info

Publication number
JPS60179605A
JPS60179605A JP59036670A JP3667084A JPS60179605A JP S60179605 A JPS60179605 A JP S60179605A JP 59036670 A JP59036670 A JP 59036670A JP 3667084 A JP3667084 A JP 3667084A JP S60179605 A JPS60179605 A JP S60179605A
Authority
JP
Japan
Prior art keywords
film
thickness
characteristic
measuring
product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59036670A
Other languages
Japanese (ja)
Inventor
Hiroyasu Nanaeda
七枝 広安
Yoshikazu Harada
原田 好員
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP59036670A priority Critical patent/JPS60179605A/en
Publication of JPS60179605A publication Critical patent/JPS60179605A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness

Abstract

PURPOSE:To measure the thickness of an Al film conveniently and accurately, by irradiating electron beams to a multilayer film in which the thickness of an SiO2 film covering the surface of the Al film is selected in a prescribed value or less, and obtaining the product of intensities of the Al characteristic X-ray and the O characteristic X-ray generated from the Al film and the SiO2 film. CONSTITUTION:The thickness of the Al film 2 as electrode or wire of semiconductor device, etc. in which the film 2 is formed on an undercoat 1 such as silicon substrate or insulator film, and the SiO2 film 3 is formed on the film 2, is measured by obtaining the product of the intensities of the Al characteristic X-ray generated by electron beam irradiation and the O characteristic X-ray generated from the film 3 without removing the film 3. By setting the thickness of the film 3 to <=0.35mu, the thickness of the film 2 can be measured conveniently and accurately by utilizing a fixed correlation between the intensities product and the thickness of the film 2. Thus, the quality and the performance, etc. of products are improved.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、表面が二酸化シリコン(SiOz)膜で覆わ
れたアルミニウム(Al)膜の膜厚を、表面上の510
2膜を破壊することなく簡便に測定することのできる膜
厚の測定方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to increasing the thickness of an aluminum (Al) film whose surface is covered with a silicon dioxide (SiOz) film to 510 mm above the surface.
2. This invention relates to a method for measuring film thickness that can be easily measured without destroying the film.

従来例の構成とその問題点 半導体装置の電極あるいは相互配線としてAで膜が多用
されているが、半導体装置の品質を管理する面から、A
l膜の厚み全正しく把握しておく必要がある。ところで
、半導体集積回路などにお ゛いては、人l電極層ある
いはAd配線の表面上も保護絶縁膜であると02膜で覆
われることが多く、このため、Ad膜の厚みの測定に際
しては、5102膜の下側に位置するAl膜を測定しな
ければならない。
Conventional configurations and their problems A film is often used as electrodes or interconnections in semiconductor devices, but from the perspective of controlling the quality of semiconductor devices, A
It is necessary to accurately understand the total thickness of the film. By the way, in semiconductor integrated circuits, etc., the surface of the electrode layer or the Ad wiring is often covered with a protective insulating film, 02 film. Therefore, when measuring the thickness of the Ad film, The Al film located below the 5102 film must be measured.

第1図は、上記の多層構造を例示する図であり、たとえ
ば、シリコン基板あるいは絶縁膜などの下地1の上にA
d膜2が形成され、さらに、このA/膜2が5102膜
3で覆われた構造となっている。
FIG. 1 is a diagram illustrating the above-mentioned multilayer structure. For example, on a base 1 such as a silicon substrate or an insulating film,
A d film 2 is formed, and this A/film 2 is further covered with a 5102 film 3.

このような位置関係にあるAl膜の膜厚を測定する方法
として、従来は、5102膜2を除去してAe膜2を露
出させたのち、所定の条件に設定された電子ビームでA
l膜2を照射し、発生するAでの特性X線強度を測定し
、予め作成しそおいた較正曲線を用いて測定値から膜厚
をめる方法、あるいは、被測定試料と類似の標準試料、
すなわち、種々の5iOz膜厚と種々のA4膜厚の組み
合せにより作製した多数の標準試料を準備し、この標準
試料をもとにしてAlおよび酸素Oの特性X線強度とA
l膜厚の相関を調べ、多数の較正曲線を予め作成してお
き、5iOz膜を破壊することなくi膜の膜厚をめる方
法が採用されていた。
The conventional method for measuring the film thickness of an Al film in such a positional relationship is to remove the 5102 film 2 to expose the Ae film 2, and then remove the Ae film 2 with an electron beam set to predetermined conditions.
Irradiate the film 2, measure the characteristic X-ray intensity generated at A, and calculate the film thickness from the measured value using a calibration curve prepared in advance, or use a standard sample similar to the sample to be measured. ,
That is, a large number of standard samples prepared by combining various 5iOz film thicknesses and various A4 film thicknesses were prepared, and based on these standard samples, the characteristic X-ray intensities of Al and oxygen O and A
A method was adopted in which the correlation between the l film thickness was investigated and a large number of calibration curves were created in advance to increase the thickness of the i film without destroying the 5iOz film.

しかしながら、前者の方法では、試料の破壊がさけられ
ず、以後の実験に支障をきたす問題がある。また、後者
の方法では、多数の標準試料の製作、これらの標準試料
の測定とデータの収集などが必要であり、このことに多
大の労力を要するばかりでなく経済面の問題もある。
However, in the former method, destruction of the sample cannot be avoided, which poses a problem that hinders subsequent experiments. Furthermore, the latter method requires the production of a large number of standard samples, the measurement of these standard samples, and the collection of data, which not only requires a great deal of labor but also poses economic problems.

発明の目的 本発明は、表面上が8102膜で覆われたAl膜の膜厚
を、SiO2膜を除くことなく簡単に測定することがで
きる膜厚測定方法の提供を目的とするものである。
OBJECTS OF THE INVENTION The object of the present invention is to provide a film thickness measuring method that can easily measure the film thickness of an Al film whose surface is covered with an 8102 film without removing the SiO2 film.

発明の構成 本発明のA4膜厚の測定方法は、Al膜の表面を覆う9
i02膜の厚みが所定値以下に選定された多層構造膜を
電子ビームで照射し、前記Al膜から発生するA4特性
X線の強度および前記5102膜から発生するO%性性
腺線強度の積をめ、同特性X線強度積から前記A5膜の
膜厚を測定する方法である。この発明の測定方法によれ
ば、5102膜が所定値以下に設定されている限シにお
いて、5102膜を破壊することなく簡便にAl膜の膜
厚が測定できる。
Structure of the Invention The method for measuring the A4 film thickness of the present invention is based on the method for measuring the thickness of A4 film.
A multilayer structure film in which the thickness of the i02 film is selected to be less than a predetermined value is irradiated with an electron beam, and the product of the intensity of A4 characteristic X-rays generated from the Al film and the O% gonadal line intensity generated from the 5102 film is calculated. Therefore, the thickness of the A5 film is measured from the characteristic X-ray intensity product. According to the measuring method of the present invention, the thickness of the Al film can be easily measured without destroying the 5102 film as long as the thickness of the 5102 film is set to a predetermined value or less.

実施例の説明 本発明の測定方法は、5iOz −kl構造の2層膜に
おいて、電子ビーム照射で0およびAlの特性X線を発
生させた場合、5102膜の厚みが所定値以下に設定さ
れると、両特性X線の強度の積とAl膜厚との関係に相
関が得られることの知見に基いてなされたものである。
Description of Examples The measurement method of the present invention is such that when characteristic X-rays of 0 and Al are generated by electron beam irradiation in a two-layer film with a 5iOz -kl structure, the thickness of the 5102 film is set to a predetermined value or less. This was done based on the knowledge that there is a correlation between the product of the intensities of both characteristic X-rays and the Al film thickness.

発明者等の確認実験によると、5iOz膜の厚みを、0
.35μm 以下に設定することにより、実際の測定に
採用して問題のない相関の得られることが確認された。
According to confirmation experiments conducted by the inventors, the thickness of the 5iOz film was reduced to 0.
.. It was confirmed that by setting the thickness to 35 μm or less, a problem-free correlation could be obtained when used in actual measurements.

第2図は、第1図で示す構造の試料として、Si 02
膜3の厚みが0・35μ〃7に選定された試料を準備し
、加速電圧が20KVの電子ビームで照射したときに発
生するOおよびAlの特性X線強度IOおよび工Alの
積(Io ・IB )とAl膜の厚0.36μツノ1 
以下の範囲では一定であり、したがって、数個の標準試
料を準備し、これのデータを収集することで実用上回等
問題のない膜厚算出グラフが作成できる。この膜厚算出
グラフを予め用意しておき、被測定試料を電子ビーム照
射して発生させた○とA5の特性xm強度積をめ、この
結果を膜厚算出グラフと照合することにより、SiO2
膜の下側に位置する人ρ膜の厚みが読み取られる。
Figure 2 shows Si 02 as a sample with the structure shown in Figure 1.
The product of the characteristic X-ray intensity IO of O and Al and the characteristic X-ray intensity of O and Al (Io ・IB ) and Al film thickness 0.36μ horn 1
It is constant within the following range, therefore, by preparing several standard samples and collecting their data, it is possible to create a film thickness calculation graph that does not pose any practical problems. By preparing this film thickness calculation graph in advance, calculating the characteristic x m intensity product of ○ and A5 generated by irradiating the sample to be measured with an electron beam, and comparing this result with the film thickness calculation graph, SiO2
The thickness of the human ρ membrane located on the underside of the membrane is read.

なお、SiO2膜の厚みが0.35μ772を越えた場
合には、Al膜厚と特性X線強度積との関係曲線にはS
iO2膜の厚みの影響を受けて変動が生じる。
Note that when the thickness of the SiO2 film exceeds 0.35μ772, the relationship curve between the Al film thickness and the characteristic X-ray intensity product has S.
Variations occur due to the influence of the thickness of the iO2 film.

したがって、このような条件下では、もはや簡便以上、
一実施例を示して本発明の測定方法を説明したが、Al
膜が形成される下地は、特に限定されるものではなく、
SiO2膜などの被膜上であってもよい。
Therefore, under these conditions, it is no longer convenient.
Although the measurement method of the present invention has been explained by showing one example,
The base on which the film is formed is not particularly limited;
It may be on a film such as a SiO2 film.

発明の効果 本発明の測定方法によれば、5iOz膜で被覆されたA
4膜の厚さを、SiO2膜を破壊することなく容易に測
定することができる。この測定方法は、特に、半導体集
積回路などに用いられる微細なA4配線層などの膜厚測
定に好適であり、製造段階、品質保証テスト段階などに
本発明の測定方法を適用してAl膜の膜厚を管理するこ
とにより、品質、性能ならびに信頼性の向上をはかる効
果が奏される。
Effects of the Invention According to the measuring method of the present invention, A coated with a 5iOz film
The thickness of the SiO2 film can be easily measured without destroying the SiO2 film. This measurement method is particularly suitable for measuring the film thickness of fine A4 wiring layers used in semiconductor integrated circuits, etc., and the measurement method of the present invention can be applied to the manufacturing stage, quality assurance test stage, etc. Controlling film thickness has the effect of improving quality, performance, and reliability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はAd模膜上5102膜で被覆された多層構造試
料を示す図、第2図はアルミニウムと酸素の相対特性X
線強度とAl膜厚との相関を示すグラフである。 1・・・・・・シリコン基板、2・・・・・・Al膜、
3・・・・・・5in2膜。 代理人の氏名 弁理士 中 尾 敏 男 はが1名第1
図 第2図 nノ朕/3.(f;s、!>
Figure 1 shows a multilayer structure sample coated with 5102 film on an Ad mock-up, and Figure 2 shows the relative characteristics of aluminum and oxygen.
It is a graph showing the correlation between line strength and Al film thickness. 1...Silicon substrate, 2...Al film,
3...5in2 membrane. Name of agent: Patent attorney Toshio Nakao (1st person)
Figure 2: No./3. (f;s,!>

Claims (2)

【特許請求の範囲】[Claims] (1) l膜の表面を覆うSiO2膜の厚みが、所定値
以下に選定された多層構造膜を電子ビームで照射し、前
記A4膜および5iOz膜から発生するAd特性X線お
よびO(酸素)特性X線の強度の積をめ、同特性X線強
度積から前記Ad膜の膜厚を測定することを特徴とする
A4膜厚の測定方法。
(1) A multilayer structure film in which the thickness of the SiO2 film covering the surface of the l film is selected to be less than a predetermined value is irradiated with an electron beam, and Ad characteristic X-rays and O (oxygen) generated from the A4 film and the 5iOz film are irradiated with an electron beam. A method for measuring the thickness of an A4 film, comprising: calculating the product of the intensities of characteristic X-rays, and measuring the thickness of the Ad film from the product of the intensities of the characteristic X-rays.
(2)多層構造膜の5102膜厚がo、35μm 以下
に選定されていることを特徴とする特許請求の範囲第1
項に記載のAd膜厚の測定方法。
(2) Claim 1, characterized in that the thickness of the multilayer structure film is selected to be equal to or less than 35 μm.
The method for measuring the Ad film thickness described in .
JP59036670A 1984-02-28 1984-02-28 Method for measuring al film thickness Pending JPS60179605A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59036670A JPS60179605A (en) 1984-02-28 1984-02-28 Method for measuring al film thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59036670A JPS60179605A (en) 1984-02-28 1984-02-28 Method for measuring al film thickness

Publications (1)

Publication Number Publication Date
JPS60179605A true JPS60179605A (en) 1985-09-13

Family

ID=12476287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59036670A Pending JPS60179605A (en) 1984-02-28 1984-02-28 Method for measuring al film thickness

Country Status (1)

Country Link
JP (1) JPS60179605A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009109246A (en) * 2007-10-26 2009-05-21 Sharp Corp Film thickness measuring method
US8544667B2 (en) 2006-11-29 2013-10-01 Yoshino Kogyosho Co., Ltd. Round synthetic resin bottle

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8544667B2 (en) 2006-11-29 2013-10-01 Yoshino Kogyosho Co., Ltd. Round synthetic resin bottle
JP2009109246A (en) * 2007-10-26 2009-05-21 Sharp Corp Film thickness measuring method

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