JPS60171724A - マスクレスイオン注入法におけるイオンビ−ム径の測定方法 - Google Patents
マスクレスイオン注入法におけるイオンビ−ム径の測定方法Info
- Publication number
- JPS60171724A JPS60171724A JP2719884A JP2719884A JPS60171724A JP S60171724 A JPS60171724 A JP S60171724A JP 2719884 A JP2719884 A JP 2719884A JP 2719884 A JP2719884 A JP 2719884A JP S60171724 A JPS60171724 A JP S60171724A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- marker
- single crystal
- diameter
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000005468 ion implantation Methods 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 239000003550 marker Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000005259 measurement Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- 239000012808 vapor phase Substances 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000001451 molecular beam epitaxy Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2719884A JPS60171724A (ja) | 1984-02-17 | 1984-02-17 | マスクレスイオン注入法におけるイオンビ−ム径の測定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2719884A JPS60171724A (ja) | 1984-02-17 | 1984-02-17 | マスクレスイオン注入法におけるイオンビ−ム径の測定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60171724A true JPS60171724A (ja) | 1985-09-05 |
| JPH026218B2 JPH026218B2 (enrdf_load_stackoverflow) | 1990-02-08 |
Family
ID=12214388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2719884A Granted JPS60171724A (ja) | 1984-02-17 | 1984-02-17 | マスクレスイオン注入法におけるイオンビ−ム径の測定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60171724A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6232117A (ja) * | 1985-08-06 | 1987-02-12 | S D S Baiotetsuku:Kk | 防菌防黴活性を有するポリエステル樹脂 |
-
1984
- 1984-02-17 JP JP2719884A patent/JPS60171724A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6232117A (ja) * | 1985-08-06 | 1987-02-12 | S D S Baiotetsuku:Kk | 防菌防黴活性を有するポリエステル樹脂 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH026218B2 (enrdf_load_stackoverflow) | 1990-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4855013A (en) | Method for controlling the thickness of a thin crystal film | |
| Ettenberg et al. | Minority carrier diffusion length and recombination lifetime in GaAs: Ge prepared by liquid‐phase epitaxy | |
| Tsang et al. | Selective area growth of GaAs/Al x Ga1− x As multilayer structures with molecular beam epitaxy using Si shadow masks | |
| JP3629292B2 (ja) | 分子線ビームエピタキシ層成長方法 | |
| JPH01136327A (ja) | 超格子構作の素子製作方法 | |
| JPH067564B2 (ja) | ウェーハ表面の半導体特性測定方法 | |
| CN108376655A (zh) | 一种晶圆制造过程中检测缺陷的定位和跟踪方法 | |
| US4456879A (en) | Method and apparatus for determining the doping profile in epitaxial layers of semiconductors | |
| JPS60171724A (ja) | マスクレスイオン注入法におけるイオンビ−ム径の測定方法 | |
| Wells et al. | Automatic positioning of device electrodes using the scanning electron microscope | |
| JP3433634B2 (ja) | 半導体単結晶中の結晶欠陥観察用試料作製方法および結晶欠陥観察方法 | |
| JPH01182738A (ja) | 化合物半導体結晶の不純物測定方法 | |
| Pietzsch | Measurement of minority carrier lifetime in GaAs and GaAs1− xPx with an intensity-modulated electron beam | |
| JPH026219B2 (enrdf_load_stackoverflow) | ||
| US7682844B2 (en) | Silicon substrate processing method for observing defects in semiconductor devices and defect-detecting method | |
| US6914442B2 (en) | Method for measuring resistivity of semiconductor wafer | |
| JP3439332B2 (ja) | 結晶欠陥の測定方法 | |
| US3783228A (en) | Method of manufacturing integrated circuits | |
| JPS60135882A (ja) | イオンビ−ム径の測定方法 | |
| JPH0943324A (ja) | 磁場測定方法および磁場測定装置 | |
| US4439268A (en) | Orientation of INP substrate wafers | |
| JPH0222536B2 (enrdf_load_stackoverflow) | ||
| JP2004271393A (ja) | ペデスタル基板、電子顕微鏡用測定治具、測定試料組み立て体、測定試料の作製方法及び測定方法 | |
| Vojak et al. | Transmission electron microscopy of GaAs permeable base transistor structures grown by vapor phase epitaxy | |
| JPH0329319A (ja) | 焦点調整方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |