JPS60170972A - Thin film semiconductor device - Google Patents

Thin film semiconductor device

Info

Publication number
JPS60170972A
JPS60170972A JP2687884A JP2687884A JPS60170972A JP S60170972 A JPS60170972 A JP S60170972A JP 2687884 A JP2687884 A JP 2687884A JP 2687884 A JP2687884 A JP 2687884A JP S60170972 A JPS60170972 A JP S60170972A
Authority
JP
Japan
Prior art keywords
film
formed
layer
substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2687884A
Inventor
Hisao Hayashi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2687884A priority Critical patent/JPS60170972A/en
Publication of JPS60170972A publication Critical patent/JPS60170972A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651Silicon transistors
    • H01L29/7866Non-monocrystalline silicon transistors
    • H01L29/78663Amorphous silicon transistors
    • H01L29/78666Amorphous silicon transistors with normal-type structure, e.g. with top gate

Abstract

PURPOSE:To prevent a thin film semiconductor element from being polluted by any impurity ion contained in a substrate by a method wherein a layer preventing diffusion of impurity ion contained in a substrate is formed between the substrate and a thin film semiconductor element. CONSTITUTION:A PSG film 2 as a layer preventing diffusion of impurity ion is formed on a glass substrate 1 and an SiO2 film 3 is formed on the film 2. A source 5 and a drain 6 are formed on the film 3 and an amorphous Si layer 7 is further formed on the source 5 and the drain 6 while an active layer 8 of the element is formed between the source 5 and the drain 6. Besides, a gate insulating film 9 is formed on the layer 7 and then a gate electrode 10 is formed on the film 9. In such a constitution, e.g. Na<+> contained in the substrate 1 may not enter into the layer 8 through the film 2 since the film 2 is provided with the capacity of preventing diffusion of especially alkali ion. Therefore the threshold voltage value may not be changed during and after the production of said element.
JP2687884A 1984-02-15 1984-02-15 Thin film semiconductor device Pending JPS60170972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2687884A JPS60170972A (en) 1984-02-15 1984-02-15 Thin film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2687884A JPS60170972A (en) 1984-02-15 1984-02-15 Thin film semiconductor device

Publications (1)

Publication Number Publication Date
JPS60170972A true JPS60170972A (en) 1985-09-04

Family

ID=12205546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2687884A Pending JPS60170972A (en) 1984-02-15 1984-02-15 Thin film semiconductor device

Country Status (1)

Country Link
JP (1) JPS60170972A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63172470A (en) * 1987-01-12 1988-07-16 Fujitsu Ltd Thin film transistor
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP2006332660A (en) * 2005-05-27 2006-12-07 Samsung Sdi Co Ltd Organic thin-film transistor, manufacturing method therefor, and organic electroluminescence display device having the organic thin-film transistor
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US9064899B2 (en) 2009-02-27 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9093402B2 (en) 2005-02-18 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9768281B2 (en) 2009-03-12 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10095071B2 (en) 2008-12-03 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device including transistor which includes oxide semiconductor
US10304962B2 (en) 2005-09-29 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111258A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device
JPS58143571A (en) * 1982-02-22 1983-08-26 Seiko Epson Corp Thin film semiconductor device
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
JPS59108357A (en) * 1982-12-14 1984-06-22 Seiko Epson Corp Substrate structure of thin film semiconductor device
JPS6057672A (en) * 1983-09-08 1985-04-03 Seiko Epson Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111258A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device
JPS58143571A (en) * 1982-02-22 1983-08-26 Seiko Epson Corp Thin film semiconductor device
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
JPS59108357A (en) * 1982-12-14 1984-06-22 Seiko Epson Corp Substrate structure of thin film semiconductor device
JPS6057672A (en) * 1983-09-08 1985-04-03 Seiko Epson Corp Semiconductor device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63172470A (en) * 1987-01-12 1988-07-16 Fujitsu Ltd Thin film transistor
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US7855106B2 (en) 1991-08-26 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7642584B2 (en) 1991-09-25 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7939822B2 (en) 2005-02-03 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US9093402B2 (en) 2005-02-18 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2006332660A (en) * 2005-05-27 2006-12-07 Samsung Sdi Co Ltd Organic thin-film transistor, manufacturing method therefor, and organic electroluminescence display device having the organic thin-film transistor
US10304962B2 (en) 2005-09-29 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10095071B2 (en) 2008-12-03 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device including transistor which includes oxide semiconductor
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US9660102B2 (en) 2009-02-27 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9997638B2 (en) 2009-02-27 2018-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9064899B2 (en) 2009-02-27 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9768281B2 (en) 2009-03-12 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

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