JPS60159747A - レチクルマスクの製造方法 - Google Patents
レチクルマスクの製造方法Info
- Publication number
- JPS60159747A JPS60159747A JP59014941A JP1494184A JPS60159747A JP S60159747 A JPS60159747 A JP S60159747A JP 59014941 A JP59014941 A JP 59014941A JP 1494184 A JP1494184 A JP 1494184A JP S60159747 A JPS60159747 A JP S60159747A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- pattern
- reticle mask
- mask
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59014941A JPS60159747A (ja) | 1984-01-30 | 1984-01-30 | レチクルマスクの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59014941A JPS60159747A (ja) | 1984-01-30 | 1984-01-30 | レチクルマスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60159747A true JPS60159747A (ja) | 1985-08-21 |
| JPS6345091B2 JPS6345091B2 (enrdf_load_stackoverflow) | 1988-09-08 |
Family
ID=11874980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59014941A Granted JPS60159747A (ja) | 1984-01-30 | 1984-01-30 | レチクルマスクの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60159747A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02242251A (ja) * | 1989-03-15 | 1990-09-26 | Fujitsu Ltd | レチクルの製造方法 |
| JP2010534601A (ja) * | 2007-07-28 | 2010-11-11 | ヴィンクラー ウント デュンネビアー アクチエンゲゼルシャフト | フラット材料片を供給し、かつフラット材料片を見当正しく搬送するための装置及び方法 |
| JP2014195099A (ja) * | 2010-12-14 | 2014-10-09 | Nikon Corp | 露光装置及びデバイス製造方法 |
-
1984
- 1984-01-30 JP JP59014941A patent/JPS60159747A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02242251A (ja) * | 1989-03-15 | 1990-09-26 | Fujitsu Ltd | レチクルの製造方法 |
| JP2010534601A (ja) * | 2007-07-28 | 2010-11-11 | ヴィンクラー ウント デュンネビアー アクチエンゲゼルシャフト | フラット材料片を供給し、かつフラット材料片を見当正しく搬送するための装置及び方法 |
| JP2014195099A (ja) * | 2010-12-14 | 2014-10-09 | Nikon Corp | 露光装置及びデバイス製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6345091B2 (enrdf_load_stackoverflow) | 1988-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5472813A (en) | Pattern exposing method using phase shift and mask used therefor | |
| US5770337A (en) | Method of inspection to determine reticle pitch | |
| CN101458442A (zh) | 布局、光掩模版的制作及图形化方法 | |
| US6451490B1 (en) | Method to overcome image shortening by use of sub-resolution reticle features | |
| US20090135390A1 (en) | Lithographic alignment marks | |
| US5237393A (en) | Reticle for a reduced projection exposure apparatus | |
| US5227269A (en) | Method for fabricating high density DRAM reticles | |
| US5161114A (en) | Method of manufacturing a reticule | |
| JPS60159747A (ja) | レチクルマスクの製造方法 | |
| JPH0443358A (ja) | チップ位置識別パターンの形成方法 | |
| JPH04252016A (ja) | パターン描画方法 | |
| JPS59160144A (ja) | ホトマスク | |
| Aman et al. | Properties of a 248-nm DUV laser mask pattern generator for the 90-nm and 65-nm technology nodes | |
| JPS62296422A (ja) | 露光方法 | |
| US6662145B1 (en) | Method, equipment, and recording medium for controlling exposure accuracy | |
| JPS6358825A (ja) | パタ−ン形成方法 | |
| JPH05158218A (ja) | マスク基板および描画方法 | |
| KR100811251B1 (ko) | 극미세 패턴의 형성방법 | |
| JPH04369825A (ja) | レチクルアライメント方法及び露光装置 | |
| JPS63179518A (ja) | 半導体製造装置 | |
| US6410350B1 (en) | Detecting die speed variations | |
| JPS59161033A (ja) | フオトマスク | |
| JP2992081B2 (ja) | パターン作成装置 | |
| JPS60192945A (ja) | マスク・プリント方法 | |
| JPS63141312A (ja) | レジストパタ−ン検査方法 |