JPS60141019A - Logic circuit - Google Patents

Logic circuit

Info

Publication number
JPS60141019A
JPS60141019A JP24702283A JP24702283A JPS60141019A JP S60141019 A JPS60141019 A JP S60141019A JP 24702283 A JP24702283 A JP 24702283A JP 24702283 A JP24702283 A JP 24702283A JP S60141019 A JPS60141019 A JP S60141019A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
circuit
fet4
drive current
logic circuit
r3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24702283A
Inventor
Yoji Hirano
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008Arrangements for reducing power consumption
    • H03K19/0016Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/086Emitter coupled logic

Abstract

PURPOSE:To save waste power consumption by inserting an FET connected to a gate control signal application terminal in series with a drive current specifying circuit so as to interrupt selectively a drive current of a logic circuit not requiring from a circuit to be driven. CONSTITUTION:The FET4 whose gate is connected to the control signal application terminal 17 is inserted in series with an emitter of the drive current specifying Tr3 and its source is connected to a voltage source terminal 12. In this logic circuit, in taking the conductive resistor of the FET4 as Rc1 and the resistance value R'3 as R3'=R3-Rc1, and the R3 as the resistance of as conventional currentspecifying circuit, then the drive current of the circuit is equal to that of the conventional circuit when the FET4 is conductive. On the other hand, when the FET4 is interrupted, the power consumption is zero. Thus, the power consumption is saved by interrupting selectively an unnecessary logic circuit.
JP24702283A 1983-12-28 1983-12-28 Logic circuit Pending JPS60141019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24702283A JPS60141019A (en) 1983-12-28 1983-12-28 Logic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24702283A JPS60141019A (en) 1983-12-28 1983-12-28 Logic circuit

Publications (1)

Publication Number Publication Date
JPS60141019A true true JPS60141019A (en) 1985-07-26

Family

ID=17157235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24702283A Pending JPS60141019A (en) 1983-12-28 1983-12-28 Logic circuit

Country Status (1)

Country Link
JP (1) JPS60141019A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61244120A (en) * 1985-04-23 1986-10-30 Nippon Telegr & Teleph Corp <Ntt> Detecting and outputting circuit for logical signal
EP0207159A1 (en) * 1984-11-12 1987-01-07 Fanuc Ltd. Voltage comparator of a type of low power comsumption
WO1989002677A1 (en) * 1987-09-17 1989-03-23 Fujitsu Limited Emitter follower circuit
EP0416323A2 (en) * 1989-09-04 1991-03-13 Siemens Aktiengesellschaft Signal level converter
EP0485200A1 (en) * 1990-11-06 1992-05-13 Nec Corporation Semiconductor integrated circuit device having ECL gate circuits
EP0564390A2 (en) * 1992-04-01 1993-10-06 International Business Machines Corporation High-speed bipolar-field effect transistor (BI-FET) circuit

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0207159A1 (en) * 1984-11-12 1987-01-07 Fanuc Ltd. Voltage comparator of a type of low power comsumption
JPS61244120A (en) * 1985-04-23 1986-10-30 Nippon Telegr & Teleph Corp <Ntt> Detecting and outputting circuit for logical signal
JPH042009B2 (en) * 1985-04-23 1992-01-16
WO1989002677A1 (en) * 1987-09-17 1989-03-23 Fujitsu Limited Emitter follower circuit
US4958094A (en) * 1987-09-17 1990-09-18 Fujitsu Limited Emitter follower circuit with MOSFET
EP0416323A2 (en) * 1989-09-04 1991-03-13 Siemens Aktiengesellschaft Signal level converter
US5122689A (en) * 1989-09-04 1992-06-16 Siemens Aktiengesellschaft Cmos to ecl/cml level converter
EP0485200A1 (en) * 1990-11-06 1992-05-13 Nec Corporation Semiconductor integrated circuit device having ECL gate circuits
EP0564390A2 (en) * 1992-04-01 1993-10-06 International Business Machines Corporation High-speed bipolar-field effect transistor (BI-FET) circuit
EP0564390A3 (en) * 1992-04-01 1994-03-09 Ibm

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