JPS60137055A - Semiconductor device mixed with mosfet and bipolar transistor and manufacture thereof - Google Patents

Semiconductor device mixed with mosfet and bipolar transistor and manufacture thereof

Info

Publication number
JPS60137055A
JPS60137055A JP24970783A JP24970783A JPS60137055A JP S60137055 A JPS60137055 A JP S60137055A JP 24970783 A JP24970783 A JP 24970783A JP 24970783 A JP24970783 A JP 24970783A JP S60137055 A JPS60137055 A JP S60137055A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
bipolar transistor
mosfet
formed
regions
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24970783A
Other versions
JPH0441503B2 (en )
Inventor
Hideo Honma
Takahide Ikeda
Osamu Saito
Kiyoshi Tsukuda
Tokuo Watanabe
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Abstract

PURPOSE:To form various types of elements on the same substrate with less steps by forming an off-set region of a MOSFET and a base region of a bipolar transistor to become the same depth in the same step. CONSTITUTION:After N type well regions 3, 3' are formed in a P type substrate, an element separating selective oxide film 2, a gate 4 and a collector 8 are formed, and then low density off-set regions 10, 10' of source, drain of P-channel MOSFET, and a base region 10'' of a bipolar transistor are formed. After an SiO2 film 14 is then formed on the side of a gate 4, high density regions 5, 5' of source, drain of MOSFET are ion implanted to form an emitter 9 of the bipolar transistor.
JP24970783A 1983-12-26 1983-12-26 Expired - Lifetime JPH0441503B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24970783A JPH0441503B2 (en) 1983-12-26 1983-12-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24970783A JPH0441503B2 (en) 1983-12-26 1983-12-26

Publications (2)

Publication Number Publication Date
JPS60137055A true true JPS60137055A (en) 1985-07-20
JPH0441503B2 JPH0441503B2 (en) 1992-07-08

Family

ID=17197001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24970783A Expired - Lifetime JPH0441503B2 (en) 1983-12-26 1983-12-26

Country Status (1)

Country Link
JP (1) JPH0441503B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347963A (en) * 1986-08-13 1988-02-29 Siemens Ag Integrated circuit and manufacture of the same
US4752589A (en) * 1985-12-17 1988-06-21 Siemens Aktiengesellschaft Process for the production of bipolar transistors and complementary MOS transistors on a common silicon substrate
JPH02103960A (en) * 1988-10-13 1990-04-17 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752589A (en) * 1985-12-17 1988-06-21 Siemens Aktiengesellschaft Process for the production of bipolar transistors and complementary MOS transistors on a common silicon substrate
JPS6347963A (en) * 1986-08-13 1988-02-29 Siemens Ag Integrated circuit and manufacture of the same
JPH02103960A (en) * 1988-10-13 1990-04-17 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date Type
JP1759427C (en) grant
JPH0441503B2 (en) 1992-07-08 grant

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