JPS60133719A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS60133719A
JPS60133719A JP58241441A JP24144183A JPS60133719A JP S60133719 A JPS60133719 A JP S60133719A JP 58241441 A JP58241441 A JP 58241441A JP 24144183 A JP24144183 A JP 24144183A JP S60133719 A JPS60133719 A JP S60133719A
Authority
JP
Japan
Prior art keywords
compound semiconductor
vessel
film
semiconductor film
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58241441A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP58241441A priority Critical patent/JPS60133719A/en
Publication of JPS60133719A publication Critical patent/JPS60133719A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To raise the mobility of carrier by filling a compound semiconductor material film in an inert gas atmosphere vessel having 10atom or higher and momentarily annealing by a light of a lamp or a laser the surface of the film from the exterior. CONSTITUTION:A wafer made of a single crystal, a polycrystal or an amorphous state, or an ion implanted compound semiconductor film 3 formed on the surface of an insulating substrate 2 is placed on a movable wafer support 1 in X-Y directions. The support 1 and the wafer are placed in a high pressure vessel 4, inert gas is fed from a gas inlet 5 into the vessel 4, and pressurized to approx. 100-1,000atom. Then, it is momentarily annealed by a laser light 8 from a quartz window 7 formed in the vessel. Thus, the mobility of the carrier of the compound semiconductor film can be enhanced near to a theoretical value.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は化合物半導体装置の製造方法に関する。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a method for manufacturing a compound semiconductor device.

〔従来技術〕[Prior art]

従来、化合物半導体単結晶は１０気圧程度の加圧下で結
晶育成されているのが通例であった。］７かし、上記従
来技術によると、キャリアーの移動度が理論値より小と
なる欠点があった。Conventionally, compound semiconductor single crystals have typically been grown under pressure of about 10 atmospheres. ]7 However, the above-mentioned conventional technology has a drawback that the carrier mobility is smaller than the theoretical value.

１− 〔目的〕 本発明は、かかる従来技術の欠点をなくし、高いキャリ
アー移動度をもつ化合物半導体装置の製造方法を提供す
ることを目的とする。1- [Objective] An object of the present invention is to eliminate the drawbacks of the prior art and provide a method for manufacturing a compound semiconductor device having high carrier mobility.

〔工程〕[Process]

上記目的を達成するための本発明の基本的な構成は、化
合物半導体装置の製造方法に関し、　Ｔ７１Ｐ、　Ｇ　
Ａｓ等の化合物半導体材料膜を１０気圧以上のＮ２ガス
あるいはＡγガス等の不活性ガス雰囲気容器内に入れ、
外部より窓を通して容器内の化合物半導体材料膜の表面
をランプ光またはレーザー光により瞬時アニールするこ
とを特徴とする。The basic structure of the present invention for achieving the above object relates to a method for manufacturing a compound semiconductor device, and includes: T71P, G
A compound semiconductor material film such as As is placed in a container with an inert gas atmosphere such as N2 gas or Aγ gas at a pressure of 10 atmospheres or more,
It is characterized in that the surface of the compound semiconductor material film inside the container is instantaneously annealed with lamp light or laser light from the outside through a window.

〔実施例〕〔Example〕

以下実施例により本発明を詳述する。 The present invention will be explained in detail with reference to Examples below.

第１図は本発明の一実施例を示す化合物半導体膜のレー
ザー・アニール処理方法の模式図である。FIG. 1 is a schematic diagram of a method for laser annealing a compound semiconductor film, showing one embodiment of the present invention.

すなわち、ウェーハ支持台１の上には、絶縁基板２の表
面に形成された、単結晶、多結晶あるいはアモルファス
状態、あるいはイオン打込みされた化合物半導体膜８か
らなるウェーッ・が置かれ、該２− 支持台１はＸ−Ｙ方向に可動とし、該支持台１とウェー
ハは高圧容器４内に置かれ、容器内は、Ａｒガス導入口
５よりＡｒガスが導入されて１００気圧乃至１０００気
圧程度に加圧され、容器に設けられた石英窓７からレー
ザー光８が化合物半導体膜８を瞬時アニールする。Ａｒ
ガスの排出口は６である。レーザー・アニールされた化
合物半導体膜全体又は表面は、多結晶化または単結晶化
物で成り、アモルファス半導体膜と多結晶体膜の如く、
２層の結晶化状態の異なる膜を作成することもできる。That is, a wafer made of a compound semiconductor film 8 formed on the surface of an insulating substrate 2 in a single crystal, polycrystal, or amorphous state, or ion-implanted is placed on the wafer support 1, and the 2- The support stand 1 is movable in the X-Y direction, and the support stand 1 and the wafer are placed in a high-pressure container 4, and Ar gas is introduced from the Ar gas inlet 5 into the container to a pressure of about 100 to 1000 atm. Under pressure, the compound semiconductor film 8 is instantaneously annealed by laser light 8 from a quartz window 7 provided in the container. Ar
There are 6 gas outlets. The entire or surface of the laser-annealed compound semiconductor film is made of polycrystalline or single crystallized material, such as an amorphous semiconductor film and a polycrystalline film.
It is also possible to create a two-layer film with different crystallization states.

化合物半導体膜表面に絶縁膜が形成されていても良いこ
とは云うまでもない。ガス体は成分元素を含んだ化合物
ガスが含有圧入されても良いことは込うまでもない。It goes without saying that an insulating film may be formed on the surface of the compound semiconductor film. It goes without saying that the gas body may be press-injected with a compound gas containing component elements.

〔効果〕〔effect〕

本発明の如く、化合物半導体膜を高圧下で瞬時アニール
することによシ、・化合物半導体膜のキャリア移動度が
理論値に近く高く得ることができ、ひいては化合物半導
体膜を用いた化合物半導体装置のスイッチング速度を速
めることとなる効果が８− ある。By instantaneously annealing the compound semiconductor film under high pressure as in the present invention, the carrier mobility of the compound semiconductor film can be obtained close to the theoretical value, and as a result, the compound semiconductor device using the compound semiconductor film can be improved. 8- This has the effect of increasing the switching speed.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示す化合物半導体膜のレー
ザー・アニール処理法を示す模式図である。 １・・支持台　２・・←ニー・・基板、８・・化合物半
導体膜　４・・高圧容器　５・・ガス人口６・・ガス出
口　７・・石英窓　８・・光ビーム。 以　上 出願人　株式会社諏訪精工舎 代理人　弁理士最　上　務 ４−FIG. 1 is a schematic diagram showing a laser annealing method for a compound semiconductor film, which is an embodiment of the present invention. 1. Support stand 2. ← Knee substrate, 8. Compound semiconductor film 4. High pressure container 5. Gas population 6. Gas outlet 7. Quartz window 8. Light beam. Applicant Suwa Seikosha Co., Ltd. Agent Patent Attorney Mogami 4-

Claims (1)

【特許請求の範囲】[Claims] ＩＨＰ、Ｇ、Ａｓ等の化合物半導体材料膜を１０気圧以
上のＷ２ガスあるいはＡγガス等の不活性ガス雰囲気容
器中に入れ、外部より窓を通して容器内の化合物半導体
膜の表面をランプ光またはレーザー光により瞬時アニー
ルすることを特徴とする化合物半導体装置の製造方法。A compound semiconductor material film such as IHP, G, and As is placed in a container with an inert gas atmosphere such as W2 gas or Aγ gas at a pressure of 10 atmospheres or higher, and the surface of the compound semiconductor film inside the container is exposed to lamp light or laser light from the outside through a window. 1. A method for manufacturing a compound semiconductor device, comprising instantaneous annealing.
JP58241441A 1983-12-21 1983-12-21 Manufacture of compound semiconductor device Pending JPS60133719A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58241441A JPS60133719A (en) 1983-12-21 1983-12-21 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58241441A JPS60133719A (en) 1983-12-21 1983-12-21 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS60133719A true JPS60133719A (en) 1985-07-16

Family

ID=17074351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58241441A Pending JPS60133719A (en) 1983-12-21 1983-12-21 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS60133719A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62163933U (en) * 1986-04-08 1987-10-17
JPS63156313A (en) * 1986-12-20 1988-06-29 Fujitsu Ltd Method of growing semiconductor crystal and apparatus therefor
JPS63289813A (en) * 1987-05-21 1988-11-28 Yamaha Corp Heat treatment of semiconductor wafer
US4988634A (en) * 1986-10-08 1991-01-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming FET with a super lattice channel

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62163933U (en) * 1986-04-08 1987-10-17
US4988634A (en) * 1986-10-08 1991-01-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming FET with a super lattice channel
US5008211A (en) * 1986-10-08 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming FET with a super lattice channel
JPS63156313A (en) * 1986-12-20 1988-06-29 Fujitsu Ltd Method of growing semiconductor crystal and apparatus therefor
JPS63289813A (en) * 1987-05-21 1988-11-28 Yamaha Corp Heat treatment of semiconductor wafer

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