JPS60124861A - Ｐｎ接合絶縁集積回路 - Google Patents

Ｐｎ接合絶縁集積回路

Info

Publication number
JPS60124861A
JPS60124861A JP59195631A JP19563184A JPS60124861A JP S60124861 A JPS60124861 A JP S60124861A JP 59195631 A JP59195631 A JP 59195631A JP 19563184 A JP19563184 A JP 19563184A JP S60124861 A JPS60124861 A JP S60124861A
Authority
JP
Japan
Prior art keywords
collector
transistor
tab
substrate
leakage current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59195631A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0556660B2 (enEXAMPLES
Inventor
ロバート　エム　ステイツト
ロドニー　テイ　バート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Burr Brown Research Corp
Original Assignee
Burr Brown Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burr Brown Research Corp filed Critical Burr Brown Research Corp
Publication of JPS60124861A publication Critical patent/JPS60124861A/ja
Publication of JPH0556660B2 publication Critical patent/JPH0556660B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Element Separation (AREA)
JP59195631A 1983-12-05 1984-09-18 Ｐｎ接合絶縁集積回路 Granted JPS60124861A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55782683A 1983-12-05 1983-12-05
US557826 1983-12-05

Publications (2)

Publication Number Publication Date
JPS60124861A true JPS60124861A (ja) 1985-07-03
JPH0556660B2 JPH0556660B2 (enEXAMPLES) 1993-08-20

Family

ID=24227040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59195631A Granted JPS60124861A (ja) 1983-12-05 1984-09-18 Ｐｎ接合絶縁集積回路

Country Status (4)

Country Link
JP (1) JPS60124861A (enEXAMPLES)
DE (1) DE3444376A1 (enEXAMPLES)
FR (1) FR2556133A1 (enEXAMPLES)
GB (1) GB2150779B (enEXAMPLES)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63274169A (ja) * 1987-05-04 1988-11-11 Rohm Co Ltd 半導体装置
JPH01189952A (ja) * 1988-01-26 1989-07-31 Toshiba Corp 半導体集積回路装置
JPH03262153A (ja) * 1990-03-12 1991-11-21 Sharp Corp Ｐｎｐトランジスタ回路

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3615049C2 (de) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrierte Widerstandsanordnung mit Schutzelement gegen Verpolung und Über- bzw. Unterspannung
JP3997550B2 (ja) * 1997-06-11 2007-10-24 セイコーエプソン株式会社 半導体装置及び液晶表示装置並びにそれらを含む電子機器
DE10314151B4 (de) * 2003-03-28 2008-04-24 Infineon Technologies Ag Halbleiterbauelementeanordnung und Verfahren zur Kompensation parasitärer Ströme

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558267A (en) * 1966-08-04 1971-01-26 Du Pont Method for dyeing high-temperature-resistant polyamides and polyimides
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source
US4153909A (en) * 1973-12-10 1979-05-08 National Semiconductor Corporation Gated collector lateral transistor structure and circuits using same
GB2014387B (en) * 1978-02-14 1982-05-19 Motorola Inc Differential to single-ended converter utilizing inverted transistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63274169A (ja) * 1987-05-04 1988-11-11 Rohm Co Ltd 半導体装置
JPH01189952A (ja) * 1988-01-26 1989-07-31 Toshiba Corp 半導体集積回路装置
JPH03262153A (ja) * 1990-03-12 1991-11-21 Sharp Corp Ｐｎｐトランジスタ回路

Also Published As

Publication number Publication date
GB2150779A (en) 1985-07-03
JPH0556660B2 (enEXAMPLES) 1993-08-20
FR2556133A1 (fr) 1985-06-07
GB8417443D0 (en) 1984-08-15
DE3444376A1 (de) 1985-08-01
GB2150779B (en) 1987-03-04

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