JPS60124616A - Mixture for semiconductive layer - Google Patents

Mixture for semiconductive layer

Info

Publication number
JPS60124616A
JPS60124616A JP23343683A JP23343683A JPS60124616A JP S60124616 A JPS60124616 A JP S60124616A JP 23343683 A JP23343683 A JP 23343683A JP 23343683 A JP23343683 A JP 23343683A JP S60124616 A JPS60124616 A JP S60124616A
Authority
JP
Japan
Prior art keywords
mixture
base polymer
ethylene
cables
polyamide resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23343683A
Other languages
Japanese (ja)
Other versions
JPH0236147B2 (en
Inventor
Toshio Niwa
利夫 丹羽
Kenji Nagai
健二 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP23343683A priority Critical patent/JPS60124616A/en
Publication of JPS60124616A publication Critical patent/JPS60124616A/en
Publication of JPH0236147B2 publication Critical patent/JPH0236147B2/ja
Granted legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE:A mixture for insulated cable semiconductive layers which can be crosslinked at high temperatures without detriment to releasability in the production of cables, obtained by mixing a polyamide resin comprising a dimer acid with an ethylene copolymer, an epoxy resin, and electroconductive carbon. CONSTITUTION:A base polymer is prepared by mixing a polyamide resin obtained by polycondensing a dibasic acid component based on the dimer acid of the formula with a diamine with an ethylene/vinyl acetate copolymer and/or an ethylene/acrylate ester copolymer. This base polymer is mixed with an epoxy resin and electroconductive carbon black (e.g., acetylene black) to obtain the purpose mixture of semiconductive layers. When this mixture is used as a material for external semiconductive layers of crosslinked polyolefin insulated cables, these cables can be subjected to corsslinking treatment at a temperature >=about 300 deg.C without detriment to releasability.

Description

【発明の詳細な説明】 技術分野 本発明は、架橋ポリオレフィン絶縁ケーブルの半導電層
に好適に用いられる半導電層用混和物に関する。
DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD The present invention relates to a mixture for a semiconducting layer that is suitably used for a semiconducting layer of a crosslinked polyolefin insulated cable.

従来技術およびその欠点 従来、架橋ポリオレフィン絶縁ケーブルの外部半導電層
をなす材料としては、主にエチレン酢酸ビニル共重合体
(gVA)をベースポリマーとし。
Prior Art and Its Disadvantages Conventionally, the material forming the outer semiconducting layer of a crosslinked polyolefin insulated cable mainly uses ethylene vinyl acetate copolymer (gVA) as a base polymer.

これに導電性カーボンブラックを混合してなる混和物が
使用されている。
A mixture of this and conductive carbon black is used.

一般に、外部半導電層は、ケーブルの使用時にはその内
側にある絶縁体と十分密着していることが必要であり、
一方端末処理にあたっては、絶縁体から容易に剥離でき
ることが望まれる。しかるに、従来のエチレン酢酸ビニ
ル共重合体をベースポリマーとした半導電層では架橋ポ
リオレフィン樹脂よりなる絶縁体との密着力が過度に大
きくなシ、剥離が困難であるという欠点を有していた。
In general, the outer semiconducting layer must be in sufficient contact with the inner insulator when the cable is used.
On the other hand, in terminal treatment, it is desired that the terminal can be easily peeled off from the insulator. However, conventional semiconducting layers using ethylene-vinyl acetate copolymers as a base polymer have the drawbacks of excessively high adhesion to insulators made of crosslinked polyolefin resins and difficulty in peeling.

本発明者等は、係る欠点を解消した半導■、性混和物と
してポリアミド樹脂もしくはポリアミド樹脂とポリオレ
フィン樹脂との混合i物をベースポリマーとし、これに
導電性カーボンブラックを混合した混合物を、既に特願
昭58′−2668号として提案している。しかしなが
ら、この半導電性混和物は、絶縁体からの剥離が容易で
ある利点を有しているもののこの混和物を用いたケーブ
ルを300℃以上の高温で架橋すると、上記剥離性が低
下する問題があることが判明し、ケーブルの架橋速度を
十分高めることができない不都合が生じた。
The present inventors have already developed a semiconductor (1) which eliminates such drawbacks, a mixture in which a polyamide resin or a mixture of a polyamide resin and a polyolefin resin (i) is used as a base polymer, and conductive carbon black is mixed therein. This was proposed in Japanese Patent Application No. 58'-2668. However, although this semiconducting mixture has the advantage of being easy to peel off from the insulator, when a cable using this mixture is crosslinked at a high temperature of 300°C or higher, there is a problem that the peelability is reduced. This resulted in the inconvenience that the crosslinking speed of the cable could not be sufficiently increased.

発明の目的 本発明は上記事情に鑑みてなされたもので、ケーブルを
300℃以上の高温で架橋しても半導電層と絶縁体との
剥離性が確保でき、よって架橋温度を300℃とするこ
とができ架橋時間の短縮を計ることのできる半導電層用
混和物を提供することを目的とする。
Purpose of the Invention The present invention has been made in view of the above circumstances, and it is possible to ensure peelability between the semiconducting layer and the insulator even if the cable is crosslinked at a high temperature of 300°C or higher, and therefore the crosslinking temperature is set at 300°C. It is an object of the present invention to provide a mixture for a semiconducting layer that can shorten the crosslinking time.

発明の構成 本発明の半導電層用混和物は、ダイマー酸からなるポリ
アミド樹脂とエチレン酢酸ビニル共重合体および/また
はエチレンアクリル酸エチル共重合体からなるベースポ
リマーに、エポキシ樹脂と導電性カーボンブラックを配
合してなるものである。
Structure of the Invention The mixture for semiconducting layers of the present invention comprises a base polymer consisting of a polyamide resin made of dimer acid, an ethylene vinyl acetate copolymer and/or an ethylene ethyl acrylate copolymer, an epoxy resin and conductive carbon black. It is made by blending.

ここで使用されるベースポリマーの一方の成分であるダ
イマー酸からなるポリアミド樹脂としては、不飽和脂肪
酸の2量体であるダイマー酸((l)式にその代表的な
構造式を示す。)の単品もしくはこのダイマー酸にアジ
ピン酸、アゼライン酸。
The polyamide resin made of dimer acid, which is one component of the base polymer used here, is made of dimer acid (a typical structural formula of which is shown in formula (l)), which is a dimer of unsaturated fatty acids. Single item or this dimer acid plus adipic acid and azelaic acid.

セパチン酸等の二塩基酸を混合したものと、ヘキサメチ
レンジアミン等のジアミン類との重縮合物であって、平
均分子量が1,000〜100.0 Onより好ましく
は3,000〜50,000であるものが好適であるが
、これに限らず他のポリアミド樹脂本使用できるう 上記のポリアミド樹脂の市販品の例として、Milve
x、パーサロン、パーサミド、マクロメル) (いずれ
もヘンケル日本社製)等をあげることができる。
A polycondensate of a mixture of dibasic acids such as cepatic acid and diamines such as hexamethylene diamine, and has an average molecular weight of 1,000 to 100.0 On, preferably 3,000 to 50,000. Milve is preferred, but is not limited to this; other polyamide resins can also be used. Examples of commercially available polyamide resins include Milve
x, Persalon, Persamide, Macromel) (all manufactured by Henkel Japan), etc.

また、ベースポリマーの他方の成分としては、エチレン
酢酸ビニル共重合体およびエチレンアクリル酸エチル共
重合体が用いられる。エチレン酢酸ビニル共重合体(E
VA) としては、酢酸ビニル(VA)含有量が10〜
50wtチの一般品種が主に用いられ、エチレンアクリ
ル酸エチル共重合体(IA)としては、アクリル酸エチ
ル(EA)含有量が10〜30wt%のものが主に用い
られるが、いずれも特に限定されるものではない。この
EVA およびEEAはそれぞれ単独で上記ポリアミド
樹脂に加えられてベースポリマーとされるか、あるいは
EVA とEEAとを所定の量比で混合したうえ上記ポ
リアミド樹脂に加えられてベースポリマーとされる。E
VA 、EEAを単独でポリアミド樹脂に加える場合の
混合量比は、ポリアミド樹@/ EVA t タB E
EA カ重ii比テ10/9゜以上とすることがよく、
好ましくは20780〜40/60の範囲が好適である
。この混合量比が10/90未満(なると、得られる半
導電層と絶縁体との剥離が困難となる。また、EVAと
EIDAとの混合物をポリアミド樹脂に加えてベースポ
リマーとする場合は、EVAとIAとの混合比は任意の
混合比で差支えない。そして、EVA とEEA との
混合物とポリアミド樹脂との混合比は先の混合比と同様
である。
Moreover, as the other component of the base polymer, ethylene vinyl acetate copolymer and ethylene ethyl acrylate copolymer are used. Ethylene vinyl acetate copolymer (E
VA), vinyl acetate (VA) content is 10~
General varieties of 50 wt% are mainly used, and as ethylene ethyl acrylate copolymers (IA), those with an ethyl acrylate (EA) content of 10 to 30 wt% are mainly used, but none of them are particularly limited. It is not something that will be done. EVA and EEA are each added alone to the polyamide resin to form a base polymer, or EVA and EEA are mixed in a predetermined ratio and then added to the polyamide resin to form a base polymer. E
When VA and EEA are added alone to polyamide resin, the mixing ratio is polyamide resin@/EVA t B E
EA weight II ratio is often set to 10/9° or more,
Preferably, the range is 20,780 to 40/60. If this mixing ratio is less than 10/90, it becomes difficult to separate the resulting semiconducting layer from the insulator.Also, when adding a mixture of EVA and EIDA to a polyamide resin to form a base polymer, EVA The mixing ratio of EVA and IA may be any desired mixing ratio.The mixing ratio of the mixture of EVA and EEA and the polyamide resin is the same as the above mixing ratio.

このベースポリマーに加えられるエポキシ樹脂としては
、一般のビスフェノールA系樹脂や環状脂肪族系樹脂な
、どが広く用いられ、特に限定されないが常温で液体で
あってエポキシ当量が100〜3001F/eq、程度
の本のが好ましい。このエポキシ樹脂のベースポリマー
への配合量は、ベース°ポリマー100重量部に対し、
0.5〜15重普部)範囲とされ、0.5重量部未満で
は、ケーブル製造時の架橋温度を300℃以上とすると
絶縁体と半導電層との剥離が困難となシ、また15重量
部を越えて配合してももはや架橋温度の上昇化効果の増
大を望めず、不経済でもある。
As the epoxy resin added to this base polymer, common bisphenol A-based resins and cycloaliphatic resins are widely used, but are not particularly limited, but are liquid at room temperature and have an epoxy equivalent of 100 to 3001F/eq, A book with a certain level is preferable. The amount of this epoxy resin added to the base polymer is as follows:
If the amount is less than 0.5 parts by weight, it will be difficult to separate the insulator and the semiconducting layer if the crosslinking temperature during cable manufacturing is 300°C or higher. Even if the amount exceeds the weight part, it is no longer possible to increase the effect of increasing the crosslinking temperature, and it is also uneconomical.

上記のベースポリマーに導電性を付与するために添加さ
れる導電性カーボンブラックとしては。
Conductive carbon black added to impart conductivity to the above base polymer.

アセチレンブラック、ファーネスブラック等の周知のカ
ーボンブラックが使用できる。上記カーボンブラックの
ベースポリマーに対する混合量は。
Well-known carbon blacks such as acetylene black and furnace black can be used. What is the mixing amount of the above carbon black with respect to the base polymer?

半導電層に要求される導電性を考慮して定められ。It is determined in consideration of the conductivity required for semiconducting layers.

通常ベースポリマ−1oo重量部に対して10〜100
重量部である。
Usually 10 to 100 per 10 parts by weight of base polymer
Parts by weight.

また、上記ベースポリマーとエポキシ樹脂とカ−ボンプ
ラックとを混合してなる半導電層用混和物には、必要に
応じて架橋剤、架橋助剤、老化防止剤等を加えることが
できる。
Further, a crosslinking agent, a crosslinking aid, an anti-aging agent, etc. can be added to the mixture for a semiconductive layer formed by mixing the base polymer, epoxy resin, and carbon plaque, as required.

架橋剤としては、ジクミルパーオキサイド(DCP)、
2.5−ジブチル−2,5−ジ(t−ブチルパーオキシ
)ヘキシン−3等の通常の過酸化物架橋剤が好適に使用
でき、ま尼架橋助剤としては、)リアリルシアヌレート
、)リアリルイノソシアヌレ−(1m−)ユニしンビス
マレイミド等が使用できる。これらの架橋剤及び架橋助
剤は。
As a crosslinking agent, dicumyl peroxide (DCP),
Common peroxide crosslinking agents such as 2,5-dibutyl-2,5-di(t-butylperoxy)hexyne-3 can be suitably used, and examples of crosslinking aids include ) realyl cyanurate, ) Reallylinosocyanuride (1m-)unishin bismaleimide and the like can be used. These crosslinking agents and crosslinking aids.

両者を併用するか、またはいずれかが単独で使用される
。また、老化防止剤としては、4.4’−チオビス(6
−1−ブチル−3−メチルフェノール)等が使用できる
Both may be used in combination or either may be used alone. In addition, as an anti-aging agent, 4,4'-thiobis(6
-1-butyl-3-methylphenol), etc. can be used.

そして、このような組成の混和物を用いて外部半導電層
を形成するには、従来方法と同様にして。
Then, an outer semiconducting layer can be formed using a mixture having such a composition in the same manner as in the conventional method.

絶縁体の形成されたケーブルに通常の押出被覆法を適用
して行うことができる。
This can be done by applying a normal extrusion coating method to a cable formed with an insulator.

実験例 〔実験例〕 本発明による半導電層用混和物を次表中に示す厖1〜8
の8種類の配合をもって調製した。また。
Experimental Example [Experimental Example] Mixtures for semiconducting layers according to the present invention were prepared in Tables 1 to 8 shown in the following table.
Eight types of formulations were prepared. Also.

比較のために次表中に示す厖9〜11の3種類の配合を
もって比較用の混和物を調製した。
For comparison, blends for comparison were prepared using three types of formulations 9 to 11 shown in the following table.

断面積501jl の軟銅撚線に、架橋剤としてジクミ
ルパーオキサイド(DCP) 2 wt、 %を含むポ
リエチレン樹脂を押出被覆して絶縁体層を形成し。
An insulating layer was formed by extrusion coating a polyethylene resin containing 2 wt.% dicumyl peroxide (DCP) as a crosslinking agent onto an annealed copper stranded wire having a cross-sectional area of 501 jl.

次いで上記の各種混和物を同様に押出被覆して外部半導
電層を形成し、これを架橋温度を変えて架橋し、11種
のケーブルを作成した。
Next, the above-mentioned various mixtures were similarly extruded and coated to form an outer semiconductive layer, which was then crosslinked at different crosslinking temperatures to produce 11 types of cables.

この11種のケーブルについて、その外部半導電層の剥
離に要する剥離力をAEICC85−791′L 1の
規格に基づいて測定した。その結果を表中に併せて示す
For these 11 types of cables, the peel force required to peel off the outer semiconductive layer was measured based on the standard of AEICC85-791'L1. The results are also shown in the table.

表に示すように、本発明による混和物を用いて外部半導
電層を形成したケーブルは、その架橋温度を380℃に
まで上げても外部半導電層を1〜1.5匈10.5イン
チ程度の剥離力で剥離することができる。一方、エポキ
シ樹脂を含まない先願発明(特願昭58−2668号)
の混和物では架橋温度300℃で剥離困難となっている
As shown in the table, the cables whose outer semiconducting layer was formed using the mixture according to the present invention had an outer semiconducting layer of 1 to 1.5 inches and 10.5 inches even when the crosslinking temperature was raised to 380°C. It can be peeled off with a certain amount of peeling force. On the other hand, a prior invention that does not contain epoxy resin (Japanese Patent Application No. 58-2668)
It is difficult to peel off the mixture at a crosslinking temperature of 300°C.

発明の効果 以上の実験例の結果から明らかなように1本発明の半導
電層用混和物は、架橋ポリオレフィン絶縁ケーブルの絶
縁体層の表面に形成される外部半導電層等の半導電層用
の材料として好適であシ、この混和物よシなる半導電層
を有するケーブルは。
Effects of the InventionAs is clear from the results of the experimental examples described above, the mixture for semiconducting layers of the present invention is effective for semiconducting layers such as the outer semiconducting layer formed on the surface of the insulating layer of a crosslinked polyolefin insulated cable. This mixture is suitable as a material for cables with a semiconducting layer.

通常の使用時には絶縁体と半導電層との密着性が良好に
保たれ、かつ端末処理にあたっては半導電層を絶縁体か
ら容易に剥離することができる。また、ケーブル製造時
の架橋温度を380℃まで上げても、−ト記易剥離性が
保持され、架橋時間の短縮を計ることができケーブルの
製造能率を上げることができる。
Good adhesion between the insulator and the semiconducting layer is maintained during normal use, and the semiconducting layer can be easily peeled off from the insulator during terminal treatment. Furthermore, even if the crosslinking temperature during cable manufacture is raised to 380° C., the easy peelability is maintained, the crosslinking time can be shortened, and the cable manufacturing efficiency can be increased.

Claims (1)

【特許請求の範囲】[Claims] ダイマー酸からなるポリアミド樹脂とエチレン酢酸ビニ
ル共重合体および/またはエチレンアクリル酸エチル共
重合体とからなるベースポリマーニ、エホキシ樹脂およ
び導電性カーボンブラックを配合してなる半導電層用混
和物。
A mixture for a semiconductive layer comprising a polyamide resin comprising a dimer acid, a base polymer comprising an ethylene vinyl acetate copolymer and/or an ethylene ethyl acrylate copolymer, an epoxy resin, and conductive carbon black.
JP23343683A 1983-12-10 1983-12-10 Mixture for semiconductive layer Granted JPS60124616A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23343683A JPS60124616A (en) 1983-12-10 1983-12-10 Mixture for semiconductive layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23343683A JPS60124616A (en) 1983-12-10 1983-12-10 Mixture for semiconductive layer

Publications (2)

Publication Number Publication Date
JPS60124616A true JPS60124616A (en) 1985-07-03
JPH0236147B2 JPH0236147B2 (en) 1990-08-15

Family

ID=16955005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23343683A Granted JPS60124616A (en) 1983-12-10 1983-12-10 Mixture for semiconductive layer

Country Status (1)

Country Link
JP (1) JPS60124616A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3476898A1 (en) * 2017-10-27 2019-05-01 Henkel AG & Co. KGaA Thermoplastic composition for 3d printing

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3476898A1 (en) * 2017-10-27 2019-05-01 Henkel AG & Co. KGaA Thermoplastic composition for 3d printing
WO2019081143A1 (en) * 2017-10-27 2019-05-02 Henkel Ag & Co. Kgaa Thermoplastic composition for 3d printing
CN111247209A (en) * 2017-10-27 2020-06-05 汉高股份有限及两合公司 Thermoplastic composition for 3D printing
US20200247995A1 (en) * 2017-10-27 2020-08-06 Henkel Ag & Co. Kgaa Thermoplastic Composition for 3D Printing
CN111247209B (en) * 2017-10-27 2023-10-31 汉高股份有限及两合公司 Thermoplastic composition for 3D printing
US11884819B2 (en) 2017-10-27 2024-01-30 Henkel Ag & Co. Kgaa Thermoplastic composition for 3D printing

Also Published As

Publication number Publication date
JPH0236147B2 (en) 1990-08-15

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