JPS6010673A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6010673A
JPS6010673A JP11905283A JP11905283A JPS6010673A JP S6010673 A JPS6010673 A JP S6010673A JP 11905283 A JP11905283 A JP 11905283A JP 11905283 A JP11905283 A JP 11905283A JP S6010673 A JPS6010673 A JP S6010673A
Authority
JP
Japan
Prior art keywords
layer
window
melting point
formed
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11905283A
Inventor
Yoshimi Shiotani
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11905283A priority Critical patent/JPS6010673A/en
Publication of JPS6010673A publication Critical patent/JPS6010673A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/456Ohmic electrodes on silicon

Abstract

PURPOSE:To reduce the contacting resistance by forming a thin high melting point metal silicide film in a wiring hole, burying the hole with a polycrystalline silicon layer, and then forming the film on the layer. CONSTITUTION:A high melting point metal silicide layer 7 of molybdenum, tungsten, titanium is formed on a P type silicon substrate 1 having source.drain region 2, a dioxidized silicon layer 3, a gate electrode 4, a PSG insulating film 5, and an electrode contacting window 6. Then, an N type polycrystalline silicon layer 8 is formed by a CVD method, and the window 6 is buried. Further, a high melting point silicide layer 9 is formed on the layer 8, triple layers 7, 8, 9 of the region except the window 6 are removed, and aluminum electrode wirings 10 are contacted with the silicide layer.
JP11905283A 1983-06-30 1983-06-30 Semiconductor device Pending JPS6010673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11905283A JPS6010673A (en) 1983-06-30 1983-06-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11905283A JPS6010673A (en) 1983-06-30 1983-06-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6010673A true JPS6010673A (en) 1985-01-19

Family

ID=14751710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11905283A Pending JPS6010673A (en) 1983-06-30 1983-06-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6010673A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62112323A (en) * 1985-09-11 1987-05-23 Texas Instruments Inc Formation of contact on semiconductor surface
JPS6437051A (en) * 1987-07-31 1989-02-07 Nec Corp Manufacture of semiconductor device
JPS6437050A (en) * 1987-07-31 1989-02-07 Nec Corp Semiconductor device
WO1996003578A1 (en) * 1994-07-22 1996-02-08 C.R.F. Societa' Consortile Per Azioni Common-rail fuel injection method for diesel engines
WO1997006560A1 (en) * 1995-08-03 1997-02-20 Micron Technology, Inc. Low cost local interconnect process
US6147405A (en) * 1998-02-19 2000-11-14 Micron Technology, Inc. Asymmetric, double-sided self-aligned silicide and method of forming the same
US7153772B2 (en) 2003-06-12 2006-12-26 Asm International N.V. Methods of forming silicide films in semiconductor devices
US8293597B2 (en) 2008-12-19 2012-10-23 Asm International N.V. Selective silicide process
US9312131B2 (en) 2006-06-07 2016-04-12 Asm America, Inc. Selective epitaxial formation of semiconductive films
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US9634106B2 (en) 2008-12-19 2017-04-25 Asm International N.V. Doped metal germanide and methods for making the same

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62112323A (en) * 1985-09-11 1987-05-23 Texas Instruments Inc Formation of contact on semiconductor surface
JPS6437051A (en) * 1987-07-31 1989-02-07 Nec Corp Manufacture of semiconductor device
JPS6437050A (en) * 1987-07-31 1989-02-07 Nec Corp Semiconductor device
WO1996003578A1 (en) * 1994-07-22 1996-02-08 C.R.F. Societa' Consortile Per Azioni Common-rail fuel injection method for diesel engines
WO1997006560A1 (en) * 1995-08-03 1997-02-20 Micron Technology, Inc. Low cost local interconnect process
US6147405A (en) * 1998-02-19 2000-11-14 Micron Technology, Inc. Asymmetric, double-sided self-aligned silicide and method of forming the same
US6524953B1 (en) 1998-02-19 2003-02-25 Micron Technology, Inc. Asymmetric, double-sided self-aligned silicide and method of forming the same
US6825113B2 (en) 1998-02-19 2004-11-30 Micron Technology, Inc. Asymmetric, double-sided self-aligned silicide and method of forming the same
US7153772B2 (en) 2003-06-12 2006-12-26 Asm International N.V. Methods of forming silicide films in semiconductor devices
US9312131B2 (en) 2006-06-07 2016-04-12 Asm America, Inc. Selective epitaxial formation of semiconductive films
US8293597B2 (en) 2008-12-19 2012-10-23 Asm International N.V. Selective silicide process
US9634106B2 (en) 2008-12-19 2017-04-25 Asm International N.V. Doped metal germanide and methods for making the same
US10043880B2 (en) 2011-04-22 2018-08-07 Asm International N.V. Metal silicide, metal germanide, methods for making the same
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US10199234B2 (en) 2015-10-02 2019-02-05 Asm Ip Holding B.V. Methods of forming metal silicides

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