JPS5994469A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS5994469A
JPS5994469A JP57203638A JP20363882A JPS5994469A JP S5994469 A JPS5994469 A JP S5994469A JP 57203638 A JP57203638 A JP 57203638A JP 20363882 A JP20363882 A JP 20363882A JP S5994469 A JPS5994469 A JP S5994469A
Authority
JP
Japan
Prior art keywords
film
light transmittance
surface
in2o3
50ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57203638A
Inventor
Masayoshi Ezawa
Akira Misumi
Chikaaki Mizoguchi
Kenkichi Suzuki
Shigeru Wakana
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57203638A priority Critical patent/JPS5994469A/en
Publication of JPS5994469A publication Critical patent/JPS5994469A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE:To obtain a light transmittance thin film which operates as both the photoreceiving surface and the surface protection with excellent light transmittance, bending resistance and film growing accuracy by employing epoxy resin which contains Si organic compound in the protecting film of the photoreceiving surface in a range of 50ppm-5wt%. CONSTITUTION:A heat resistant and insulating protecting film 2 is provided on a flexible and heat resistant substrate 1 of metal of organic insulating material, lower electrodes 3a-3e formed of In2O3.SnO2 are disposed at the prescribed interval, an amorphous Si pin layer 4 is superposed, upper electrodes 5a-5e of In2O3 are opposed to the lower electrodes, and an SiO6 film is covered. Further, when a light transmittance epoxy resin film 7 which includes an Si organic material in a range of 50ppm-5wt% (particularly preferably 0.1-0.5%) is superposed in thickness of approx. 5-10mum, a photoelectric converter in which the surface protecting film 7 exhibits the light transmittance of approx. 92%, the bending radius of 60mm., the bending resistance of 10<5> times, the film growing dimensional accuracy of + or -10-20% in 5-100mum and high reliability can be obtained.
JP57203638A 1982-11-22 1982-11-22 Photoelectric converter Pending JPS5994469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57203638A JPS5994469A (en) 1982-11-22 1982-11-22 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57203638A JPS5994469A (en) 1982-11-22 1982-11-22 Photoelectric converter

Publications (1)

Publication Number Publication Date
JPS5994469A true JPS5994469A (en) 1984-05-31

Family

ID=16477358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57203638A Pending JPS5994469A (en) 1982-11-22 1982-11-22 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5994469A (en)

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