JPS5990920A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5990920A
JPS5990920A JP20162682A JP20162682A JPS5990920A JP S5990920 A JPS5990920 A JP S5990920A JP 20162682 A JP20162682 A JP 20162682A JP 20162682 A JP20162682 A JP 20162682A JP S5990920 A JPS5990920 A JP S5990920A
Authority
JP
Japan
Prior art keywords
film
substrate
formed
form
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20162682A
Inventor
Hideaki Ozawa
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20162682A priority Critical patent/JPS5990920A/en
Publication of JPS5990920A publication Critical patent/JPS5990920A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/5448Located on chip prior to dicing and remaining on chip after dicing

Abstract

PURPOSE:To make it possible to easily verify afterward a recording paper on which electrical properties are recorded and a semiconductor chip on which a circuit element is formed, by including a step of forming a symbol representing the position of the integrated circuit chip in the state of a substrate before the substrate is divided into integrated circuit chips. CONSTITUTION:On a P type Si substrate 1 to form semiconductor devices, such as ICs or LSIs, and SiO2 film is formed by thermal oxidation, and an Si3N4 film 3 is formed on the film 2 by CVD. With a window-opened photoresist film 4 employed as a mask, the substrate 1 is plasma-etched to form the Si3N4 film 3 into a predetermined pattern. At the same time, a window is opened to form a fine opening 5 beforehand. An SiO2 film 6 for separating elements from each other is formed on the substrate, and an SiO2 film 7 of minute shape is also on the substrate at the fine opening 5 such that the shape of the film 7 forms a symbol 14 for each of the portions of the Si substrate 13 which are defined by scribe lines 11, 12.
JP20162682A 1982-11-16 1982-11-16 Manufacture of semiconductor device Pending JPS5990920A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20162682A JPS5990920A (en) 1982-11-16 1982-11-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20162682A JPS5990920A (en) 1982-11-16 1982-11-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5990920A true JPS5990920A (en) 1984-05-25

Family

ID=16444180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20162682A Pending JPS5990920A (en) 1982-11-16 1982-11-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5990920A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369050A (en) * 1991-05-31 1994-11-29 Fujitsu Limited Method of fabricating semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369050A (en) * 1991-05-31 1994-11-29 Fujitsu Limited Method of fabricating semiconductor device

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