JPS5986143A - Automatic wafer exchange device - Google Patents

Automatic wafer exchange device

Info

Publication number
JPS5986143A
JPS5986143A JP19523582A JP19523582A JPS5986143A JP S5986143 A JPS5986143 A JP S5986143A JP 19523582 A JP19523582 A JP 19523582A JP 19523582 A JP19523582 A JP 19523582A JP S5986143 A JPS5986143 A JP S5986143A
Authority
JP
Japan
Prior art keywords
wafer
disk
transfer
magazine
arm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19523582A
Other languages
Japanese (ja)
Other versions
JPH0140467B2 (en
Inventor
Nobuhiro Yoshioka
吉岡 信博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP19523582A priority Critical patent/JPS5986143A/en
Publication of JPS5986143A publication Critical patent/JPS5986143A/en
Publication of JPH0140467B2 publication Critical patent/JPH0140467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)

Abstract

PURPOSE:To irradiate a wafer cooling unit at the rear of an opening with an ion beam and prevent the inner part of a vacuum chamber from being damaged by dirt by providing a disc, its rotary device, magazine floating conveying unit, and intermediate station where dummy wafers can freely be extracted and housed. CONSTITUTION:A disc rotary device that intermittently rotates a disc 2, conveying unit that floats and conveys a magazine 16 from a wafer extraction device 17 to a waer housing position 18, intermediate stations 21 and 22 where the dummy wafer 54 between the disc 2 and conveying unit 19 can be extracted and housed by a freely opening and closing arm piece, and three conveying arm devices 24 to 26 are provided. As a result, even when the number of wafers 1 that should be mounted on the disc 2 is insufficient, the dummy wafer can automatically be mounted. When an ion is injected and processed, a wafer cooling unit at the rear of the opening 3 of the disc that is not blocked by the wafer 1 is irradiated with the ion and the inner part of a vacuum chamber can be prevented from being damaged by dirt. In addition, the generation of dirt is prevented by the move of the magazine 16 and the cleanliness of the wafer can be improved and then the wafer can smoothly and quickly be replaced.

Description

【発明の詳細な説明】 本発明はイオン注入装置のディスクに取付けされた複数
枚のフェノ・の自動交換装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an automatic exchange device for a plurality of phenols attached to a disk of an ion implanter.

従来例えば第1図及び第2図示の工うVCCイオン注入
口金設けた真空室す内で複数枚のウェハck取付けたデ
ィスクdk回転させて、多数枚のウェハCにイオン注入
処理を行なう装置が知られるが、この種装置ではディス
クdを真空室すから取出しイオン注入処理の終えたフェ
ノ1Cを新たなウェハCに交換する作業が煩雑で、これ
を自動的に行なうことが望まれる。″またディスクdK
取付けるべき新たなウニ/S C:の枚数に不足を生じ
た場合イオン注入中にイオンビームがディスクdの開孔
et介して背後のウニノー冷却装[fを照射し真空室b
P3を汚損するので、該開孔eを適当に閉塞することが
好ましい。
Conventionally, for example, an apparatus is known that performs ion implantation processing on a large number of wafers C by rotating a disk dk to which a plurality of wafers ck are attached in a vacuum chamber equipped with a VCC ion implantation nozzle, as shown in FIGS. 1 and 2. However, in this type of apparatus, the work of taking out the disk d from the vacuum chamber and replacing the ion-implanted phenol 1C with a new wafer C is complicated, and it is desirable to do this automatically. ``Also disk dK
If there is a shortage in the number of new disks to be installed, the ion beam will irradiate the rear disk cooling system [f] through the opening in the disk d during ion implantation, and the vacuum chamber b
In order to avoid staining P3, it is preferable to appropriately close the opening e.

本発明はかかる要望を満足したウェハ自動交換装置を提
供することを目的としたもので、周囲にウェハが装填さ
れるべき開[1を備えた円板状のディスクを保持して間
歇的にこれを回転するディスク回転装置と、該ディスク
の側方の移送路上に置かれた複数枚のウェハを出し入れ
自在に収容するマガジンを該移送路下方から突出し且つ
移送方向に移動する移動片により浮上させてウェハ取出
位置からウェハ収容位置まで移送する移送装置と、該デ
ィスクとウェハ取出位置及びウェハ収容位置との各中間
に設けられ、該ウニハト略同径のダミーウェハを下方に
備えると共にその上方にウェハを下面から支承する閉位
置とダミーウェハの通過を許容する開位置とに開閉自在
の腕片を備えた中間ステーションと、該移送路のウェハ
取出位置及びウェハ収容位置の各マガジンと該中間ステ
ーションの各間でウェハを吸着して移送する揺動自在の
腕片からなる第1移送腕装置と、該中間ステーションと
該ディスクの開口との間でウェハを吸着して移送する2
叉状の揺動自在の腕片からなる1g2移送腕装置とから
成る。
An object of the present invention is to provide an automatic wafer exchange device that satisfies such demands, and is designed to hold a disc-shaped disk around which a wafer is to be loaded and to intermittently exchange the wafers. A disk rotation device that rotates a disk, and a magazine that accommodates a plurality of wafers placed on a transfer path on the side of the disk and that can be taken in and out freely are floated by a moving piece that projects from below the transfer path and moves in the transfer direction. A transfer device for transferring the wafer from the wafer take-out position to the wafer storage position is provided between the disk and the wafer take-out position and the wafer storage position, and a dummy wafer with approximately the same diameter as the wafer is provided below, and a dummy wafer is placed below the wafer. an intermediate station having an arm piece that can be opened and closed between a closed position supporting the dummy wafer and an open position allowing passage of the dummy wafer; and an intermediate station between each magazine at the wafer take-out position and the wafer storage position of the transfer path and the intermediate station. a first transfer arm device consisting of a swingable arm piece that adsorbs and transfers the wafer; and a second transfer arm device that adsorbs and transfers the wafer between the intermediate station and the opening of the disk.
It consists of a 1g2 transfer arm device consisting of a fork-shaped swingable arm piece.

本発明の実施例を別紙図面につき説明するに、その第3
図に於てfl)はシリコンその他の円形のウェハ、(2
)ハ該ウェハ(1)の複数枚が装填されてイオン注入装
置内に出し入れされるディスク、(3)は該ディスク(
2)の周囲に環状に配設したウェハ(1)が取付けされ
る開口を示し、該ウェハ(1)は該開口(31を塞ぐよ
うに装填され、その周囲をばね(4)で弾圧された2叉
状の押え杆(5)で押圧固定し、該ウェハ(1)の取外
しに際しては該ディスク(2)の透孔(2a )ft介
して突入するピンにエフ押え杆(5)が持ち上げされる
The third embodiment of the present invention will be described with reference to the attached drawings.
In the figure, fl) is a silicon or other circular wafer;
) C is a disk loaded with a plurality of the wafers (1) and taken in and out of the ion implantation apparatus; (3) is a disk loaded with the wafer (1);
The wafer (1) is loaded so as to close the opening (31), and its periphery is compressed by a spring (4). The wafer (1) is pressed and fixed with a bifurcated presser rod (5), and when the wafer (1) is removed, the F presser rod (5) is lifted by a pin that enters through the through hole (2a) of the disk (2). Ru.

該ディスク(2)はその裏面に第5図に明示する工うな
ボス部(6)を備え、これをディスク回転装置(7)の
チャック機構(8)で把持して該デ4スク(2)ヲ略水
平に回転するようにした。
The disk (2) is provided with a boss portion (6) clearly shown in FIG. I made it rotate almost horizontally.

該回転装置(7)はギヤボックス(9)を介して間歇的
に回転される中空軸CIIt−備え、その側方に設けた
シリンダαDが伸縮すると該中空、軸ua)の内外の互
に連絡した連杆O3とベアリングケースt13) (1
3)が上下動して該中空軸α呻の上端部のグ・ヤック機
構(8)が作動し、そのアーム(8a)が前記ボス部(
6)を把持し域は解放するようにしycaHはシリンダ
01)にエフ上下動する腕杆で、その先端部が下方のベ
アリングケースOJに形成した保合溝α9と係合する。
The rotating device (7) has a hollow shaft CIIt- which is rotated intermittently via a gear box (9), and when a cylinder αD provided on the side thereof expands and contracts, the hollow shaft communicates with the inside and outside of the shaft ua). connected rod O3 and bearing case t13) (1
3) moves up and down to operate the gear mechanism (8) at the upper end of the hollow shaft α, and its arm (8a)
6) is gripped and the area is released, and ycaH is an arm rod that moves up and down on the cylinder 01), and its tip engages with the retaining groove α9 formed in the lower bearing case OJ.

間歇的に回転するディスク(2)の側方には、第3図に
見られるようにマガジンae全ウェハ取出位置αDから
ウェハ収容位置a樟へと移送する移送装置α埠が設けら
れると共に該移送装置霞のウェハ取出位置0η及びウェ
ハ収容位置(+81と該ディスク(2)の各中間に開閉
自在の腕片(至)を備えた中間ステーションt2n Q
3が夫々設けられる。そしてウェハ取出位置(17)及
びウェハ収容位置側の各マガジンti61 (16)と
各中間ステーション+211 (23との各間にウェハ
(1)全吸着して夫々移送する腕片(至)からなるm1
移送腕装置(至)(ハ)を設けると共に中間ステーショ
ンC2Dし邊と該ディスク(2)の開口(3)との間で
ウェハ(1)を吸着して移送する2叉状の揺動自在の腕
片(26a)(26b)からなる第2移送腕装置(至)
を設けるようにした。
As shown in FIG. 3, a transfer device α for transferring all wafers from the magazine ae to the wafer storage position a is provided on the side of the disk (2) which rotates intermittently. Intermediate station t2n Q with an arm piece (to) that can be opened and closed between the wafer take-out position 0η and the wafer storage position (+81) of the device Kasumi and the disk (2).
3 are provided respectively. Between each magazine ti61 (16) at the wafer take-out position (17) and the wafer storage position and each intermediate station +211 (23), there is an arm piece (m1) for sucking all the wafers (1) and transferring them respectively.
A transfer arm device (to) (c) is provided, and a two-pronged swingable arm is provided to adsorb and transfer the wafer (1) between the intermediate station C2D and the opening (3) of the disk (2). A second transfer arm device (to) consisting of arm pieces (26a) (26b)
.

該移送装置a1の詳細は第6図及び第7図に示す如くで
あり左右1対の長溝t27)を形成した移送路(例の下
方[’fi動機(2)とスライダ((至)が往復動する
スライド軸6I)を取付けた可動枠0)の複数組を列状
に配列して設け、各組の電動機(ハ)が回転すると、そ
の出力軸(2)に取付けた円盤状のカム(ロ)が固定枠
(至)のローラ(檜に乗り上げて可動枠c17Jを上動
させると共にリンク0?)全弁してスライダ(至)に連
結したホイール(至)が回転して該スライド軸01)に
沿ってスライダ(至)を移動させ、かくて該スライダ国
に取付けた左右1対の長手のアームOIが移送路(ハ)
の長溝(27)全介してその上方に突出して該移送路(
2樟上のマガジンue’i浮上させると共に該スライダ
(至)のストローク距離だけ移送する。
The details of the transfer device a1 are as shown in FIGS. 6 and 7, and the transfer path (lower part of the example) has a pair of long grooves t27 on the left and right. A plurality of sets of movable frames 0) with movable slide shafts 6I) are arranged in a row, and when the electric motor (c) of each set rotates, a disc-shaped cam ( The roller (b) of the fixed frame (to) rides on the cypress and moves the movable frame c17J upward, and the link 0?) is fully valved, and the wheel (to) connected to the slider (to) rotates and the slide shaft 01 ), and the pair of left and right long arms OI attached to the slider move along the transfer path (c).
The transfer path (27) projects upwardly through the entire long groove (27).
2. The magazine ue'i above the bar is floated, and the slider is moved by the stroke distance.

該アームc31はこの移送路(28)上に突出して移動
する行程を終えるとカム図による可動枠g湯の下降とリ
ンクCnの戻り作l1JJにエフ移送路(至)の下方に
沈下して復動じ、マガジンaeハ該アームG31のかか
る作動の複数回の繰返しで移送路(至)のウェハ取出位
置面からウェハ収容位置(18へと浮上状態で送られ、
マガジンueと移送路(至)とが摺接しないの工塵芥が
発生せずウェハ(11の表面を汚染することがない。尚
図示の如く可動枠C37Jの複数組を設ける場合、各ア
ーム(31it、第3図に点線示の如く内外に千鳥状に
配設することが好ましい。
When the arm c31 has completed the stroke of protruding onto the transfer path (28), it sinks below the transfer path (F) and returns to the lowering of the movable frame g according to the cam diagram and the return movement of the link Cn l1JJ. By repeating this operation of the arm G31 several times, the magazine ae is sent in a floating state from the wafer take-out position surface of the transfer path (to) to the wafer storage position (18),
If the magazine ue and the transfer path (to) do not come into sliding contact, no dust is generated and the surface of the wafer (11) is not contaminated.In addition, when multiple sets of movable frames C37J are provided as shown in the figure, each arm (31it , is preferably arranged in a staggered manner inside and outside, as shown by dotted lines in FIG.

該ディスク(2)と移送装置(11のウェハ取出位置a
7)及びウェハ収容位置(11Gの各中間に設けられる
中間ステーション(2D(22ハ下方にアルミニウムそ
の他でウェハ(1)と同径に形成された円形のダミーウ
ェハ(54)の複数枚を収容するポット(41を設ける
と共に上方に第8図乃至第11図示のような開閉自在の
腕片(7)を設けて構成され、各腕片四はjJT11図
示の如く内側下方にその閉位置に於てはウェハ(11の
下面周囲を支承するがその開位置ではその下方のポット
(41のダミーウェハ(54)の通過取出しを妨げない
程度のフランジ(4I)を備えるようにした。また各腕
片(20は第8図乃至第10図示の如くその根部(20
a )(20a)に於てシリンダ本体(1渇の左右に突
設した案内ビン+43 (43に押潰され、該シリンダ
本体(4の内のピストン(44が室(4!9内に導入さ
れた圧力流体にエフばね(4119に抗して移動すると
ピストン杆(47)と一体のスライド軸(僧のo −”
y (inが該根部(20a)のカム(51t−押し、
該腕片(2Gはシリンダ本体(4]から離れた開位置に
移動する。また該ピストン04)に作用する圧力流体が
排除されると該ピストン(44)はばね■に押されて戻
るのでローラ(41のカム6Qに対する押圧が解かれ腕
片12(1(2Iはこれらの間に張設した戻しばね14
(i) VC引かれて閉位置に移動する。該腕片(21
(21)の開閉作動の指令は例えば第2移送腕装置(ハ
)の先端のセンナから出され、その指令によりシリンダ
本体(4りへの圧力流体の流路の開閉弁が作動すること
に!jj行ない得る。
The disk (2) and the transfer device (wafer removal position a of 11)
7) and an intermediate station (2D) provided in the middle of each of the wafer storage positions (11G and 22G). (41) and an arm piece (7) which can be opened and closed as shown in Figs. A flange (4I) is provided to support the periphery of the lower surface of the wafer (11), but is large enough not to obstruct passage and extraction of the dummy wafer (54) of the pot (41) below the pot (41) in its open position. As shown in Figures 8 to 10, the root part (20
a) In (20a), the cylinder body (1) is crushed by the guide bins +43 (43) protruding on the left and right sides, and the cylinder body (44, the piston (44) is introduced into the chamber (4!9). When the pressure fluid moves against the F spring (4119), the piston rod (47) and the integrated slide shaft (Monk's o-"
y (in is the cam (51t-push) of the root (20a),
The arm piece (2G) moves to the open position away from the cylinder body (4). Also, when the pressure fluid acting on the piston 04 is removed, the piston (44) is pushed back by the spring ■, so the roller (The pressure on the cam 6Q of 41 is released, and the arm piece 12 (1 (2I) is the return spring 14 stretched between them.
(i) VC is pulled and moves to the closed position. The arm piece (21
The command to open and close (21) is issued, for example, from the senna at the tip of the second transfer arm device (c), and the command activates the on-off valve for the pressure fluid flow path to the cylinder body (4). You can do it.

該ボッ) (4Gの底部には第4図示のようにり7ト(
53)e設けてダミーウェハ(54)の最上層のものが
腕片C20のすぐ下方に常時位置する工うに押し上げら
れるようにした。
(The bottom of 4G has 7 holes as shown in the 4th figure.)
53) e was provided so that the top layer of the dummy wafer (54) could be pushed up into a groove that was always located immediately below the arm piece C20.

マガジンσeはウェハ(1)を間隔を存して収容し得る
ようにウェハ収容棚(55)を備えると共にその側方及
び上方vcBt(ウェハ(1)ヲ出し入れする開口(5
6)及び吸盤(57)を設けた第1移送腕装置l1l)
’2eの腕片・2:I)が降下進入する開放部(59)
を備え、また各m 1移送腕装置124) +25)の
腕片ホ■まその根部全昇降自在の機枠(60)の案内杆
(61)に沿ってリンク(623Kエリ往復摺動するス
ライダ(63)に固定された構成を夫々有し、各第1移
送腕装置+241 +2!9はマガジンLIG+の移送
路(至)上の位置に対応して大々次の如き作動を行なう
。即ちウェハ取出位置(17)vc位置したマガジン囮
からウェハ(1)を取出す場合、ml移送腕装置U4)
 ノM 片+23) i’J: 機枠(6t+) カそ
の側方のシリンダ(64)により降下されてマガジン1
1(1)の開放部(59)からウェハ(11k吸着すべ
く進入し、続いてリンク(62)が電動機(65)にエ
フ揺動さf’1.ると該腕片(23は中間ステーション
圓方向に移動し、同時にシリンダ(64)の復動で機枠
(60)を元の高さに1で戻され、ウニノ1(1)が中
間ステーション(21)の腕片し〔上に達すると吸盤(
51)の吸引力が解除されてウェハ(1)が中間ステー
ション(2])上に載せられる。
The magazine σe is equipped with a wafer storage shelf (55) so as to store the wafers (1) at intervals, and has an opening (5
6) and a first transfer arm device l1l) provided with a suction cup (57)
Opening part (59) where '2e's arm piece 2:I) descends and enters
In addition, each m 1 transfer arm device 124) + 25) has a link (623K area) with a slider (623K area) that reciprocates along the guide rod (61) of the machine frame (60) that can be raised and lowered at the base of the arm. 63), and each of the first transfer arm devices +241 to +2!9 performs the following operations in accordance with the position on the transfer path of the magazine LIG+. When taking out the wafer (1) from the magazine decoy located at position (17) vc, the ml transfer arm device U4)
ノM piece + 23) i'J: Machine frame (6t+) is lowered by the cylinder (64) on the side and magazine 1
1 (1) enters from the open part (59) to pick up the wafer (11k), and then the link (62) is swung by the electric motor (65) f'1. When the arm piece (23 is the intermediate station At the same time, the machine frame (60) is returned to its original height by the double movement of the cylinder (64), and Unino 1 (1) reaches above the arm of the intermediate station (21). Then the sucker (
The suction force of 51) is released and the wafer (1) is placed on the intermediate station (2]).

ウェハ収容位t[¥(慢に位tηしたマガジン1eにウ
ェハfilを収容する場合、もう一方の第1移送腕装置
1251は先ずシリンダ(64)による機枠(60)の
下降により腕片(□で中間ステー7ヨンC’3上のウニ
ノ1(1)を吸着し、続く電動機(65)の回動とシリ
ンダ(64)による機枠(60)の上昇で腕片j」はマ
ガジン(1e方向に移動し乍ら適当高さ上昇し、ウニノ
ー +11をマガジン(16)の前方の開口(56)か
らその収容棚(55)内に収め、そこで吸着を解除して
その収容が終る。
When storing wafers in the magazine 1e at the wafer storage position t[\(tη), the other first transfer arm device 1251 first moves the arm piece (□ Then, by the rotation of the electric motor (65) and the lifting of the machine frame (60) by the cylinder (64), the arm piece j'' is moved towards the magazine (1e direction). While moving, it rises to an appropriate height and stores the Uninow +11 into the storage shelf (55) through the front opening (56) of the magazine (16), where the suction is released and storage is completed.

各中間ステーション(211+2″IJの間には先端に
吸盤1(66) k有する略直角に拡いた第2移送腕装
置(至)の腕片(26a )(26b)’Th軸(67
)で軸着し、該腕片(26a)(26b)が昇降及び9
00の旋回を行なう軸(67)により作動されると一方
の腕片(26a)の吸盤(66)は中間ステーション(
2m)上のウニノー(1)t−吸着すると同時に他方の
腕片(26b )がディスク(2)上のイオン注入済の
ウニノ1(1)全吸着して上昇し、続く90°の旋回と
昇降で腕片(26b)のウニノ11)eテ(スフ121
から中間ステーション(2邊上に排出すべく移送すると
共に腕片(26a)のウェハ(1)を該ディスク(2)
に装填する・。この間ディスク(2)の押え杆(5)ハ
ディスク(2)の透孔(2a)を介して突入するビンに
エフ持ち上げされ、開口(3)上のウェハ(11が交換
されるを許容する。ウェハ取出位置a7)のマガジン(
teのウェハfilがなくなった場合、中間ステーショ
ン(21)上にはウェハfilが第1移送腕装置(I!
化、cり送られて来ないが、この場合該中間ステーショ
ン(2I)の腕片四が開き第2移送腕!![t2f9は
ポット14(l内に用意されたダミーウェハ(54)’
を吸着してディスク(2)の開口(3)に取付けする。
Between each intermediate station (211+2''IJ) is the arm piece (26a) (26b)'Th axis (67
), and the arm pieces (26a) and (26b) move up and down and
When actuated by the shaft (67) that makes the 00 turn, the suction cup (66) of one arm piece (26a) moves to the intermediate station (
At the same time, the other arm piece (26b) adsorbs all of the ion-implanted Unino 1 (1) on the disk (2) and rises, followed by a 90° rotation and elevation. Unino 11) e te (suf 121) of the arm piece (26b)
The wafer (1) of the arm piece (26a) is transferred to the intermediate station (2nd side) for ejection, and the wafer (1) of the arm piece (26a) is transferred to the disk (2).
Load it into. During this time, the presser rod (5) of the disk (2) is lifted into the bin that protrudes through the through hole (2a) of the disk (2), allowing the wafer (11) on the opening (3) to be replaced. Magazine (at wafer removal position a7)
When the wafer fil of te runs out, the wafer fil is transferred to the first transfer arm device (I!) on the intermediate station (21).
However, in this case, all four arms of the intermediate station (2I) open and the second transfer arm! ! [t2f9 is the dummy wafer (54) prepared in the pot 14 (l)'
is attached to the opening (3) of the disk (2).

このダミーウェハ(54)を取付けたディスク(21の
開口(3)は適当な記憶装置により記憶され、イオン注
入処理後に該開口(3)からダミーウェハ(54)を取
外して中間ステーション(2′L!J上に載せられた場
合その腕片t2Iが開いて該ダミーウェハ(54)を下
方のボッ) (4t) [収容し、ウェハ収容位置(1
81のマガジン(16)内には収容されない。
The opening (3) of the disk (21) to which this dummy wafer (54) is attached is stored in a suitable storage device, and after the ion implantation process, the dummy wafer (54) is removed from the opening (3) and placed at the intermediate station (2'L!J). When the dummy wafer (54) is placed on the wafer storage position (1
It is not accommodated in the magazine (16) of 81.

その作動を説明するに、イオン注入処理済みのウェハ(
1)を備えたディスク(2)がディスク回転装置(7)
に載せられると、先ず第2移送腕装置(261が上下し
てディスク(2)のイオン注入済みのウニノ1(1)の
1枚と中間ステーション(21)上に送られて来た新し
いウェハ(1)とを各腕片(26a)(26b)で吸着
し、90°旋回したのちその吸着が解除されるとディス
ク(21の開口(3)には新しいウェハ(1)が装填さ
れる。この装填が終るとディスク(2)は回転装置(7
)にエリ1区画回転して次の交換されるべきウェハ+1
1が第2移送腕装置16)の取出位置に位置する。中間
ステーション(2渇上のイオン注流みのウェハ(1)は
第1移送腕装置129により吸着され移送装置filの
ウェハ収容位[(181に位置するマガジンueのウェ
ハ収容棚(55)内に収められる。またもう一方の中間
ステーションCD上には移送装置α1のウェハ取出位置
(17)K位置するマガジンueからもう一方の第1移
送腕装置IA4jfCより取出された新しいウェハ(1
)が載置される。そして再び第2移送腕装置(至)が作
動してディスク(2)のウェハ(1)ヲ新しいものに取
換える。
To explain its operation, ion implanted wafers (
The disk (2) equipped with the disk rotation device (7)
When the wafer is placed on the intermediate station (21), the second transfer arm device (261) moves up and down to transfer the ion-implanted Unino 1 (1) of the disk (2) and the new wafer (261) sent onto the intermediate station (21). 1) is suctioned by each arm piece (26a) (26b), and when the suction is released after turning 90 degrees, a new wafer (1) is loaded into the opening (3) of the disk (21). After loading, the disk (2) is rotated by the rotating device (7).
) rotates one area to the next wafer to be replaced +1
1 is located at the removal position of the second transfer arm device 16). The wafer (1) on which the ions are injected at the intermediate station (2) is adsorbed by the first transfer arm device 129 and placed in the wafer storage shelf (55) of the magazine UE located at the wafer storage position of the transfer device fil (181). Also, on the other intermediate station CD, a new wafer (1
) is placed. Then, the second transfer arm device (to) operates again to replace the wafer (1) on the disk (2) with a new one.

以上の作動金縁返すことに工9ディスク(2)のイオン
注入済みの複数枚のウェハ(1)が新しいウェハ(1)
に交換されるが、ウェハ取出位1g +171のマガジ
ンOe内の新しいウェハ(1)がなくなった場合中間ス
テーション+211の腕片(イ)が開き、第2移送腕装
置(2eはボッ) (41内のダミーウェハ(rd)゛
を吸着し、これをディスク(2)の開口(3)に装填す
る。
In order to return the above operation, the ion-implanted wafer (1) of the 9 disk (2) is replaced with a new wafer (1).
However, when there is no new wafer (1) in the magazine Oe at wafer removal position 1g +171, the arm piece (a) of intermediate station +211 opens and the second transfer arm device (2e is closed) (inside 41 A dummy wafer (rd) is picked up and loaded into the opening (3) of the disk (2).

従ってイオン注入すべくマガジン(1611c用意した
ウェハfilの枚数がディスク(2)の開口(3)の数
よりも少なくてもダミーウェハ(54)が装填されるの
でイオン注入処理の際に該開口(3)全弁してイオンビ
ームが透過することを防止し得、真空室内の汚損を防止
出来る。またディスク(2)からダミーウェハ(54)
が中間ステーション(2渇に取出されたと@は腕片(2
Iが開いて下方のiyッ) (4I内にダミーウェハ(
543を収容する。
Therefore, even if the number of wafers prepared in the magazine (1611c) for ion implantation is smaller than the number of openings (3) of the disk (2), the dummy wafers (54) are loaded, so that during the ion implantation process, the openings (3) ) All valves can be used to prevent the ion beam from passing through and prevent contamination in the vacuum chamber.Also, from the disk (2) to the dummy wafer (54)
is taken out by the intermediate station (2) and @ is the arm piece (2).
I open and lower iy) (Dummy wafer inside 4I (
Accommodates 543.

ウェハ取出位置(17)のマガジン(lljが空になる
と移送装置(19が作動してそのアームcslが移送路
(ハ)上に突出移動するので空のマガジン(lGlは浮
上状態でウェハ収容位置側方向に送られ、その際ウェハ
収容位Uaa+のイオン注入済みのウェハ(1)全収容
したマガジン(IG)を側方に送り、必要に応じて待機
位置(67)に用意された新しいウェハillを収めた
マガジンaOをウェハ取出位置αηに移送することが出
来る。
When the magazine (llj) at the wafer take-out position (17) becomes empty, the transfer device (19) is activated and its arm csl protrudes onto the transfer path (c), moving the empty magazine (lGl in a floating state to the wafer storage position side). At that time, the magazine (IG) containing all the ion-implanted wafers (1) in the wafer accommodation position Uaa+ is sent to the side, and if necessary, the new wafer ill prepared in the standby position (67) is transferred to the side. The stored magazine aO can be transferred to the wafer take-out position αη.

このように本発明に工ればディスクを間歇的に回転させ
るディスク回転装置と、マガジンをウェハ取出位置から
ウェハ収容位置へと浮上させて移送する移送装置と、該
ディスクと移送装置との間のダミーウェハを開閉自在の
腕片で取出収容自在とする中間ステーションと、ウニノ
・取出位置及びウェハ収容位置の各マガジンと該中間ス
テーションの間でウェハを吸着して移送するif移送腕
装置と、該中間ステーションと該ディスクの間でウェハ
を移送する2叉状の第2移送腕装置とを設けたのでディ
スクに取付けされるべきウェハの枚数に不足を生じても
自動的にダミーウェハを取付は出来、イオン注入処理に
際してウェハで閉塞されないディスクの開口が存するこ
との不都合を解消出来、マガジンは移送装置で浮上され
て送られるので移送による塵芥の発生が防止され、ウェ
ハの清浄度を向上させ(L円滑迅速なウェハの交換を行
なえる等の効果がある。
As described above, the present invention provides a disk rotating device that rotates the disk intermittently, a transfer device that levitates and transfers the magazine from the wafer take-out position to the wafer storage position, and a link between the disk and the transfer device. an intermediate station from which dummy wafers can be taken out and stored with an arm piece that can be opened and closed; an IF transfer arm device which adsorbs and transfers wafers between each magazine at the Unino/take-out position and wafer storage position and the intermediate station; Since a bifurcated second transfer arm device is provided to transfer wafers between the station and the disk, even if there is a shortage in the number of wafers to be attached to the disk, dummy wafers can be automatically attached, and the ion This eliminates the inconvenience of having an opening in the disk that is not blocked by wafers during the injection process, and since the magazine is floated and sent by the transfer device, the generation of dust due to transfer is prevented, and the cleanliness of the wafers is improved (L smooth and quick). This has the advantage that wafers can be exchanged easily.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はイオン注入装置の裁断平面図、第2図はその■
−H−H線側断側面図3図は本発明装置の1例の平面図
、第4図はそのIV−IVM線截断面図第5図は第3図
のv−M線截断面図、第6図及び第7図は第3図の■−
■線及び■−■線截線面断面図8図は中間ステーション
の腕片の拡大平面図、第9図はその■−IX線截断線図
断面図0図は第8図の左側面図、第11図は第8図のM
−M線截断面図でろる。 fil・・・ウェハ     (2)・・・ディスク(
3)・・・開口      (7)・・・ディスク回転
装置(161・・・マガジン    αD・・・ウニノ
・取出位置(18)・・・ウェハ収容位置 (1’l・
・・移送装置(イ)・・・腕片      c!11(
2渇・・・中間ステーション(23・・・腕片    
  (至)C!19・・・第1移送腕装置(26a)(
26b)・・・腕片 (2Gl・・・第2移送腕装置(
28)・・・移送路     (54)・・・ダミーウ
ェハ特許用 願人 日本真空技術株式会社
Figure 1 is a cutaway plan view of the ion implanter, and Figure 2 is its
3 is a plan view of an example of the device of the present invention, FIG. 4 is a cross-sectional view taken along the line IV-IVM, and FIG. 5 is a cross-sectional view taken along the line v-M in FIG. 3. Figures 6 and 7 are shown in Figure 3.
8 is an enlarged plan view of the arm of the intermediate station, FIG. 9 is a sectional view taken along the ■-IX line, and 0 is a left side view of FIG. 8. Figure 11 is M in Figure 8.
- It is a cross-sectional view taken along the M line. fil...Wafer (2)...Disk (
3)...Opening (7)...Disk rotating device (161...Magazine αD...Unino/take-out position (18)...Wafer storage position (1'l/
...transport device (a)...arm piece c! 11(
2 thirst...intermediate station (23...arm piece)
(To) C! 19...first transfer arm device (26a) (
26b)...Arm piece (2Gl...Second transfer arm device (
28)...Transfer path (54)...For dummy wafer patent Applicant: Japan Vacuum Technology Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 周囲にウェハが装填されるべき開口を備えた円板状のデ
ィスクを保持して間歇的にこれを回転するディスク回転
装置と、該ディスクの側方の移送路上に置かf′L7’
(複数枚のウェハを出し入れ自在に収容するマガジンを
該移送路下方から突出し且つ移送方向に移動する移動片
により浮上させてウェハ取出位置からウェハ収容位置ま
で移送する移送装置と、該ディスクとウェハ取出Mlt
及びウェハ収容位置との各中間に設けられ、該ウェハと
略同径のダミーウェハを下方に備えると共にその上方に
ウェハを下面から支承する閉位置とダミーウェハの通過
全許容する開位置とに開閉自在の腕片を備えた中間ステ
ーションと、該移送路のウェハ取出位置及びフェノ・収
容位置の各マガジンと該中間ステーションの各間でウェ
ハを吸着して移送する移動自在の腕片からなる第1移送
腕装置と、該中間ステーションと該ディスクの開口との
間でウェハを吸着して移送する2叉状の揺動自在の腕片
からなる第2移送腕装置とから成るフェノ・自動交換装
置。
a disk rotation device that holds a disk-like disk with an opening on the periphery into which a wafer is to be loaded and rotates it intermittently;
(A transfer device that projects a magazine that can accommodate a plurality of wafers in and out of the transfer path from below the transfer path and floats it with a moving piece that moves in the transfer direction to transfer it from a wafer take-out position to a wafer storage position; and Mlt.
A dummy wafer having approximately the same diameter as the wafer is provided below, and a dummy wafer above the wafer is provided between the wafer storage position and the wafer storage position, and is capable of opening and closing between a closed position in which the wafer is supported from below and an open position in which the dummy wafer is completely allowed to pass through. a first transfer arm consisting of an intermediate station equipped with an arm piece, and a movable arm piece that adsorbs and transfers a wafer between each magazine at a wafer take-out position and a phenol storage position of the transfer path and the intermediate station; A phenol automatic exchange device comprising a second transfer arm device comprising a two-pronged swingable arm piece for adsorbing and transferring a wafer between the intermediate station and the opening of the disk.
JP19523582A 1982-11-09 1982-11-09 Automatic wafer exchange device Granted JPS5986143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19523582A JPS5986143A (en) 1982-11-09 1982-11-09 Automatic wafer exchange device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19523582A JPS5986143A (en) 1982-11-09 1982-11-09 Automatic wafer exchange device

Publications (2)

Publication Number Publication Date
JPS5986143A true JPS5986143A (en) 1984-05-18
JPH0140467B2 JPH0140467B2 (en) 1989-08-29

Family

ID=16337728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19523582A Granted JPS5986143A (en) 1982-11-09 1982-11-09 Automatic wafer exchange device

Country Status (1)

Country Link
JP (1) JPS5986143A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211292A2 (en) * 1985-08-09 1987-02-25 Hitachi, Ltd. Molecular beam epitaxy apparatus
JPS62133546U (en) * 1986-02-17 1987-08-22
JPS62158756U (en) * 1986-03-29 1987-10-08
EP0244950A2 (en) * 1986-04-04 1987-11-11 Materials Research Corporation Method and apparatus for handling and processing wafer-like materials
JPS63108713A (en) * 1986-10-27 1988-05-13 Nec Kansai Ltd Ion implantation
JPH02126649A (en) * 1988-11-07 1990-05-15 Teru Yamanashi Kk Transfer apparatus
US5061144A (en) * 1988-11-30 1991-10-29 Tokyo Electron Limited Resist process apparatus
TWI447795B (en) * 2010-12-29 2014-08-01 Univ Tsinghua Wafer exchange device for chemical-mechanical polishing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108641A (en) * 1981-12-21 1983-06-28 Hitachi Ltd Device for automatically exchanging wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108641A (en) * 1981-12-21 1983-06-28 Hitachi Ltd Device for automatically exchanging wafer

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211292A2 (en) * 1985-08-09 1987-02-25 Hitachi, Ltd. Molecular beam epitaxy apparatus
JPS62133546U (en) * 1986-02-17 1987-08-22
JPH0423858Y2 (en) * 1986-02-17 1992-06-04
JPS62158756U (en) * 1986-03-29 1987-10-08
JPH0722851Y2 (en) * 1986-03-29 1995-05-24 日新電機株式会社 Ion processing device
EP0244950A2 (en) * 1986-04-04 1987-11-11 Materials Research Corporation Method and apparatus for handling and processing wafer-like materials
JPS63108713A (en) * 1986-10-27 1988-05-13 Nec Kansai Ltd Ion implantation
JPH02126649A (en) * 1988-11-07 1990-05-15 Teru Yamanashi Kk Transfer apparatus
US5061144A (en) * 1988-11-30 1991-10-29 Tokyo Electron Limited Resist process apparatus
TWI447795B (en) * 2010-12-29 2014-08-01 Univ Tsinghua Wafer exchange device for chemical-mechanical polishing apparatus

Also Published As

Publication number Publication date
JPH0140467B2 (en) 1989-08-29

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