JPS5975680A - 薄膜素子の製造法 - Google Patents

薄膜素子の製造法

Info

Publication number
JPS5975680A
JPS5975680A JP57186407A JP18640782A JPS5975680A JP S5975680 A JPS5975680 A JP S5975680A JP 57186407 A JP57186407 A JP 57186407A JP 18640782 A JP18640782 A JP 18640782A JP S5975680 A JPS5975680 A JP S5975680A
Authority
JP
Japan
Prior art keywords
resin
glass
layer
thin film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57186407A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6227555B2 (cs
Inventor
Masaharu Ono
大野　雅晴
Takashi Hirao
孝 平尾
Koshiro Mori
森　幸四郎
Shinichiro Ishihara
石原　慎一郎
Masatoshi Kitagawa
雅俊 北川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57186407A priority Critical patent/JPS5975680A/ja
Publication of JPS5975680A publication Critical patent/JPS5975680A/ja
Publication of JPS6227555B2 publication Critical patent/JPS6227555B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Laminated Bodies (AREA)
  • Formation Of Insulating Films (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Photovoltaic Devices (AREA)
JP57186407A 1982-10-22 1982-10-22 薄膜素子の製造法 Granted JPS5975680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57186407A JPS5975680A (ja) 1982-10-22 1982-10-22 薄膜素子の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57186407A JPS5975680A (ja) 1982-10-22 1982-10-22 薄膜素子の製造法

Publications (2)

Publication Number Publication Date
JPS5975680A true JPS5975680A (ja) 1984-04-28
JPS6227555B2 JPS6227555B2 (cs) 1987-06-15

Family

ID=16187867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57186407A Granted JPS5975680A (ja) 1982-10-22 1982-10-22 薄膜素子の製造法

Country Status (1)

Country Link
JP (1) JPS5975680A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0361357U (cs) * 1989-10-17 1991-06-17

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032589A (cs) * 1973-06-28 1975-03-29
JPS58218179A (ja) * 1982-06-11 1983-12-19 Sharp Corp 薄膜太陽電池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032589A (cs) * 1973-06-28 1975-03-29
JPS58218179A (ja) * 1982-06-11 1983-12-19 Sharp Corp 薄膜太陽電池

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0361357U (cs) * 1989-10-17 1991-06-17

Also Published As

Publication number Publication date
JPS6227555B2 (cs) 1987-06-15

Similar Documents

Publication Publication Date Title
US4758526A (en) Procedure for producing an integrated system of thin-film solar cells connected in series
US4623751A (en) Photovoltaic device and its manufacturing method
US6037005A (en) Display substrate electrodes with auxiliary metal layers for enhanced conductivity
US6479316B1 (en) Decals and methods for providing an antireflective coating and metallization on a solar cell
US5312643A (en) Method of producing a transparent conductive film provided with supplementary metal lines
JP4987191B2 (ja) 集積化薄膜太陽電池の製造方法
JPS62213177A (ja) 電気デバイス製作時の短絡防止方法
JP2680582B2 (ja) 光起電力装置の製造方法
JPS5975680A (ja) 薄膜素子の製造法
JP3746410B2 (ja) 薄膜太陽電池の製造方法
JPH11274533A (ja) 太陽電池の製造方法、それにより製造された太陽電池、並びに半導体素子の製造方法
JPH0978236A (ja) 酸化インジウム・すず透明導電膜の成膜方法
JP3085180B2 (ja) 電界効果型太陽電池
JPH05274917A (ja) 酸化錫透明導電膜
JPH0428132B2 (cs)
JP4801895B2 (ja) 太陽電池セルの製造方法並びに太陽電池モジュール及びその製造方法
JPS60211906A (ja) アモルフアスシリコン太陽電池およびその製造方法
JPS62113483A (ja) 薄膜太陽電池
JPH08306946A (ja) 太陽電池の電極製造方法
JPH0560273B2 (cs)
JPS6058682A (ja) 可撓性太陽電池
JPS61269381A (ja) 光起電力装置の製造方法
JPH0357080B2 (cs)
JPH0370184A (ja) 光起電力装置の製造方法
JPH0382169A (ja) 非晶質太陽電池の製造方法