JPS595970A - Apparatus for diagnosis of interior of enclosed bus bar - Google Patents

Apparatus for diagnosis of interior of enclosed bus bar

Info

Publication number
JPS595970A
JPS595970A JP11255982A JP11255982A JPS595970A JP S595970 A JPS595970 A JP S595970A JP 11255982 A JP11255982 A JP 11255982A JP 11255982 A JP11255982 A JP 11255982A JP S595970 A JPS595970 A JP S595970A
Authority
JP
Japan
Prior art keywords
light emitting
light
bus bar
voltage
shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11255982A
Other languages
Japanese (ja)
Inventor
Hiroshi Murase
洋 村瀬
Iwao Oshima
大島 巌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11255982A priority Critical patent/JPS595970A/en
Publication of JPS595970A publication Critical patent/JPS595970A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Relating To Insulation (AREA)
  • Protection Of Static Devices (AREA)
  • Installation Of Bus-Bars (AREA)

Abstract

PURPOSE:To facilitate maintenance and inspection, by detecting the potential of a shield embedded in an insulation spacer as light by a pair of light emitting diodes connected in parallel in positive and negative opposite relationship to make it possible to easily carry out the positional confirmation of the partial discharge place of the insulation spacer. CONSTITUTION:When rated voltage is charged to a bus bar, a current sufficient to emit light from light emitting diodes 5, 6 is not flowed through a circuit constituted from a condenser 8, a resistor 7 and the light emitting diodes 5, 6. On the other hand, when abnormal voltage with positive polarity is generated relative to the bus bar, voltage is generated in a shield and light is emitted from the light emitting diode 5. When abnormal voltage with negative polarity is generated, light is emitted from the light emitting diode 6. Lights from the light emitting diodes 5, 6 are guided to O/E converters 20, 21 through light guides 18, 19 to be converted to electric signals. Respective electric signals are transmitted to a differential amplifier 22 and, by calculating the difference of the respective electric signals, both positive and negative wave forms are measured and an abnormal place can be detected.

Description

【発明の詳細な説明】 ・し技術分野〕 本発明は密閉母線の内部診断すなわち、内部異状および
異状場所を検出する装置に関する。
DETAILED DESCRIPTION OF THE INVENTION - TECHNICAL FIELD The present invention relates to an internal diagnosis of a sealed busbar, that is, a device for detecting internal abnormalities and abnormal locations.

し背景技術とその問題点〕 最近−都市における用地難の問題から、変電所1:おい
ては充電部間を空気により絶縁した空気絶縁方式から、
接地電位になした圧力容器内に充填したSF6ガス等の
絶縁性ガスによ・9、この圧力容器と絶縁して充電部導
体を配置したガス絶縁方式の所謂縮小形変電所に変わり
つつある。   □しかし、この縮小形変電所において
は、充電部導体が圧力容器によって覆われている為、特
に母線を金属シースで゛覆った密閉母線1:おい゛て絶
縁耐力の低下により、主に金属シースから絶縁して母線
を支持する絶縁スペーサに起こる部分放電の検出が容易
でなかった。この部分放電の検出方法として金属シース
から大地に流れるコロナパルス電流の検出等が知られて
いるが、金属シ″−ス全体より検出する為部分放電個所
の位置確認が困離であり、更に外部雑音の影響が゛大き
□く、棲出旬能であつても非常に感度が悪かった。
[Background technology and its problems] Recently, due to the problem of land shortage in cities, substation 1 has changed from an air insulation method in which live parts are insulated by air.
Due to the use of an insulating gas such as SF6 gas filled in a pressure vessel set to ground potential, substations are being transformed into so-called scaled-down substations of the gas-insulated type, in which conductors of live parts are placed insulated from the pressure vessel. □However, in this scaled-down substation, since the conductor of the live part is covered by a pressure vessel, especially the sealed busbar 1 which covers the busbar with a metal sheath: It has not been easy to detect partial discharges that occur in the insulating spacer that insulates and supports the busbar from the ground. Detection of the corona pulse current flowing from the metal sheath to the ground is known as a method for detecting this partial discharge, but since it is detected from the entire metal sheath, it is difficult to confirm the location of the partial discharge, and furthermore, it is difficult to confirm the location of the partial discharge. The influence of noise was very large, and the sensitivity was extremely poor even in the case of Shunno.

〔発明の目的〕[Purpose of the invention]

本発明は−F記欠点に鑑みてなされたもので、縮小形変
電所の密閉切線1=おける荷電検出は勿論、外部雑音の
影響を受けることなく絶縁スペーサの部分放電個所の位
置確認が容易に1行なえ、保守点検を容易にした密閉母
線の内部診断装置を提供することを目的とする。
The present invention has been made in view of the drawbacks listed in -F, and it is possible to easily confirm the position of a partial discharge point in an insulating spacer without being affected by external noise, as well as detecting charges at the sealed cutting line 1 of a reduced-sized substation. It is an object of the present invention to provide an internal diagnostic device for a sealed bus bar that can be easily inspected and maintained in one step.

〔発明の概要〕[Summary of the invention]

上記目的を達成する為に、本発明は絶縁スペーサに埋設
されるシールドの電位を、正負逆並列に接続した一対の
発光ダイオードにより光として検出し、この光を電気信
号に変換した後、これらの電気信号を比較して密閉母線
内部の異常を検出するよう1ニしたことを特徴とする。
In order to achieve the above object, the present invention detects the potential of a shield embedded in an insulating spacer as light using a pair of light emitting diodes connected in positive and negative parallels, and converts this light into an electrical signal. It is characterized in that it detects abnormalities inside the sealed bus bar by comparing electrical signals.

〔実施例〕〔Example〕

以下本発明の一実施例を図面と共に説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明の原理図である。図1=おいて、その内
部1−8F6ガス等の絶縁性ガスを充填し、かつ接地電
位になされた金属シース1内に充填部導体である母線2
を案内し、この母線2を金属シース1から絶縁して絶縁
スペーサ3により支持している。つまり絶縁スペーサ3
と対応した金属シース1を分割し、両金属シースの対向
部にフランジを形成し、この7ランジにより絶縁スペー
サ3を挾持する。しうに図示しないボルトにより接続し
ている。すSに絶縁スペーサ3内に母線2と所定圧離隔
てて母線2を包囲した電界緩和用シールド4が埋設され
ている。正負逆方向に並列接続される2個の発光ダイオ
ード5,6に直列接続し抵抗7および、この発光ダイオ
ード5,6と抵抗71:より構成される回路と並列に接
続されるコンデンサ8とから構成される回路のコンデン
サ8の一端を前記シールド41:接続し、コンデンサ8
の他端を接地電位になされた金属シース1に接続してい
る。即ち接地されている。尚コンデンサ9は、母線2と
シールド4との間の等価浮遊容量を、コンデンサlOは
金属シース1とシールド4との間の等価浮遊容量を表わ
す。次に第2図1=おいて、t41図の符号と同一符号
は同一部品を表わす。絶縁スペーサ3内I=埋設された
電界緩和用シールド4は、導体11.12を介して抵抗
7およびコンデンサ81−接続されている。絶縁スペー
サ3の外周にはリング状の金属フランジ13が取付けら
れており、金属シース1を相互に機械的・電気的に接続
している。抵抗7.コンデンサ89発光ダイオード5゜
6および導体12を内蔵した箱体14が、リング状のフ
ランジ131=設けた凹、部13a H取付けられてい
る。導体12は絶縁物151;より箱体14(二絶縁支
持されている。発光ダイオード5,6はカップリング1
6.17およびライトガイド18.19を介して、光を
電気信号に変換する光−電気変換器(すE変換器)20
.21に連結されている。またり、変換器20.21は
それぞれの電気信号を比較する差動増幅器22に結合さ
れている。
FIG. 1 is a diagram showing the principle of the present invention. In Fig. 1, a bus bar 2, which is a filled conductor, is inside a metal sheath 1, which is filled with an insulating gas such as 1-8F6 gas and brought to the ground potential.
The bus bar 2 is insulated from the metal sheath 1 and supported by an insulating spacer 3. In other words, insulating spacer 3
The metal sheath 1 corresponding to the above is divided, flanges are formed on opposing parts of both metal sheaths, and the insulating spacer 3 is held between the seven flanges. They are connected to each other by bolts (not shown). An electric field mitigation shield 4 surrounding the bus bar 2 is buried within the insulating spacer 3 at a predetermined distance from the bus bar 2. It consists of a resistor 7 connected in series to two light emitting diodes 5 and 6 connected in parallel in opposite positive and negative directions, and a capacitor 8 connected in parallel to a circuit consisting of the light emitting diodes 5 and 6 and a resistor 71. Connect one end of the capacitor 8 of the circuit to be connected to the shield 41, and connect the capacitor 8 to the shield 41.
The other end is connected to a metal sheath 1 which is at ground potential. That is, it is grounded. The capacitor 9 represents the equivalent stray capacitance between the bus bar 2 and the shield 4, and the capacitor lO represents the equivalent stray capacitance between the metal sheath 1 and the shield 4. Next, in FIG. 2 1=, the same symbols as those in FIG. t41 represent the same parts. The electric field mitigation shield 4 buried within the insulating spacer 3 is connected to the resistor 7 and the capacitor 81 via conductors 11 and 12. A ring-shaped metal flange 13 is attached to the outer periphery of the insulating spacer 3, and mechanically and electrically connects the metal sheaths 1 to each other. Resistance 7. A box body 14 containing a capacitor 89, a light emitting diode 5.6, and a conductor 12 is attached to a ring-shaped flange 131, which is a concave portion 13aH. The conductor 12 is supported by an insulator 151;
6.17 and a light guide 18.19, an optical-to-electrical converter (E-converter) 20 converts light into an electrical signal.
.. It is connected to 21. The converters 20.21 are also coupled to a differential amplifier 22 which compares the respective electrical signals.

上述の構成1:おいて、母線2(二定常状態I:おいて
、定格電圧十E又は−Bの電圧が課電されている場合、
発光ダイオード5,61=はコンデンサ8゜9 、、、
.10および、抵抗7によシ、規定される電流が流れる
こと1:なるが、通常の定格電、圧では発光ダイオード
5.6が発光せず、密閉母線内部の異常が発生した際発
光ダイオード5,6が発光して異常場所を求めることを
可能とする為のコンデンサ8の容量および抵抗7の値は
次のよりな争件を満さなければならない。尚コンデンサ
9は母線2とシールド4との間の等価浮遊容量を、また
コンデンサ10は金属シース1とシールド4との間の等
価浮遊容量を表わす為、密閉母線に入る絶縁スペーサ3
特有の値であり、一般的1ニコンデンサ9の等価浮遊容
量CIIは3[pF〕〜10〔pF〕、コンデ/+10
の等価浮遊容量C,。は100[1)F’)〜500 
[pF’)である。
In the configuration 1 described above, when the bus 2 (in steady state I) is charged with a voltage of rated voltage 1E or -B,
Light emitting diodes 5, 61 = capacitor 8゜9,...
.. 10, and the specified current flows through the resistor 7.1: However, under normal rated voltage and pressure, the light emitting diode 5.6 does not emit light, and when an abnormality occurs inside the sealed bus bar, the light emitting diode 5. , 6 to emit light to detect the abnormal location, the capacitance of the capacitor 8 and the value of the resistor 7 must satisfy the following conditions. Note that capacitor 9 represents the equivalent stray capacitance between bus bar 2 and shield 4, and capacitor 10 represents the equivalent stray capacitance between metal sheath 1 and shield 4.
It is a specific value, and the equivalent stray capacitance CII of a general 1-capacitor 9 is 3 [pF] to 10 [pF], and the capacitance CII is 3 [pF] to 10 [pF].
The equivalent stray capacitance C,. is 100[1)F') ~ 500
[pF').

第1条件として、母線21″−発生する異常電圧をカバ
ーする全ての周波数に対して、本考案(二係る密閉母線
の内部診断装置の周波数応答特性が平担である必要があ
る。
The first condition is that the frequency response characteristic of the internal diagnosis device for a sealed bus bar according to the present invention (2) must be flat for all frequencies that cover the abnormal voltage generated from the bus bar 21''.

第2条件として、シールド4と金属シース1との間に発
生する電圧と発光ダイオード5.6の発光強度とを比例
関係に保つ必要がある。
As a second condition, it is necessary to maintain a proportional relationship between the voltage generated between the shield 4 and the metal sheath 1 and the light emission intensity of the light emitting diode 5.6.

第3条件として、母線2に異常電圧が発生した場合、発
光ダイオード5,6にそれらが発光するl二十分な電流
が流れる必要がある。
As a third condition, when an abnormal voltage occurs on the bus bar 2, a current sufficient to cause the light emitting diodes 5 and 6 to emit light must flow through the light emitting diodes 5 and 6.

第4条件として、シールド4は絶縁スペーサ3端部の゛
電界緩和の役目も果す為、このシールド4の電位は母線
2に発生した異常電圧に、Lつで異常に高くなってはな
らない。これらの4条件を数式1:表現し、計算すると
次のようになる。
As a fourth condition, since the shield 4 also plays the role of mitigating the electric field at the end of the insulating spacer 3, the potential of the shield 4 must not become abnormally high at L due to the abnormal voltage generated on the bus bar 2. These four conditions are expressed as formula 1 and calculated as follows.

まず第1条件については、一般1=母線2に発生する異
常゛電圧は数IQKJ(z以上の高周波である為、本考
案に係る内部診断装置の周波数応答特性はl0KHz以
上の周波数で平担となればよい。このことを数式で表わ
すと次のLうになる。
First, regarding the first condition, since the abnormal voltage generated on the bus 2 is at a high frequency of several IQKJ (z or more), the frequency response characteristic of the internal diagnostic device according to the present invention is flat at frequencies of 10KHz or more. This can be expressed mathematically as follows:

(C6+C1o)Iち〉τ0 ・・・・・・・・・・・
・(1)ここでC!l l C10はそれぞれコンデン
サ8,10の容量、几、は抵抗7の抵抗値、τ。はl0
KHz tニ一対応する異常電圧の時定数である。
(C6+C1o)Ichi〉τ0・・・・・・・・・・・・
・(1) C here! l l C10 is the capacitance of capacitors 8 and 10, respectively, 几 is the resistance value of resistor 7, and τ. is l0
KHz t is the time constant of the corresponding abnormal voltage.

次に第2条件については、発光ダイオードは一般的に2
v程度の順方向電圧ドロップを有する。
Next, regarding the second condition, the light emitting diode is generally 2
It has a forward voltage drop of about v.

従ってコンデンサ8の端子電圧が、発光ダイオード5.
6の順方向電圧ドロップに対し、無視できる程度に大き
くなければならない。発光ダイオード5,6に流れる順
方向電流を■。、順方向電圧ドロップをV。とじた場合
、第2条件は次式で表わされる。
Therefore, the terminal voltage of the capacitor 8 is the same as that of the light emitting diode 5.
6, the forward voltage drop should be negligible. ■ The forward current flowing through the light emitting diodes 5 and 6. , the forward voltage drop is V. In the case of binding, the second condition is expressed by the following equation.

R,I、 )) Vo  ・・・・・・・・・・・・(
2)次に第3条件(二ついては、母線21発生するサー
ジ電圧をv1コンデンサ9の容量をC,とすると第3条
件は次式で表わされる。
R, I, )) Vo ・・・・・・・・・・・・(
2) Next, the third condition (secondly, if the surge voltage generated by the bus 21 is v1 and the capacitance of the capacitor 9 is C), the third condition is expressed by the following equation.

最後に第4条件については、コンデンサ8,9゜10に
よるシールド4の分圧がある一定値以下C二なれば−L
い。すると第4条件は次式で表わされる。
Finally, regarding the fourth condition, if the partial pressure of the shield 4 due to the capacitors 8 and 9° 10 is less than a certain value C2, -L
stomach. Then, the fourth condition is expressed by the following equation.

ただし−nはある一定の電圧比で、(シールド41:許
容される最大電圧)/(母線21:発生する最大′電圧
)を表わす。ここで、具体的にC6の容量とR1の抵抗
値を求める。C,は3〔pF〕〜lO〔pF〕、C1o
は100[pF)〜500[[)F)  であり、母線
21′″、発生する最大電圧を1500KV 、一般的
な発光ダイオードの順方向電圧ドロップv0を2[V)
 、最大順方向電流Imaxを200 [rnA]%微
的な順方向電流lm1nを5Q[mA)とする。シール
ド4に許容される最大電圧は実験の結果3[KV]  
であるので、上記4条件を満すコンデンサ8の容量C8
と抵抗7の抵抗値R1は以下のようにして求められる。
However, -n is a certain voltage ratio, and represents (shield 41: maximum allowable voltage)/(bus bar 21: maximum generated voltage). Here, the capacitance of C6 and the resistance value of R1 are specifically determined. C, is 3 [pF] ~ lO [pF], C1o
is 100[pF) to 500[[)F), the maximum voltage generated at the bus bar 21'' is 1500KV, and the forward voltage drop v0 of a typical light emitting diode is 2[V].
, the maximum forward current Imax is 200 [rnA]%, and the minute forward current lm1n is 5Q [mA]. The maximum voltage allowed for shield 4 is 3 [KV] as a result of the experiment.
Therefore, the capacitance C8 of capacitor 8 that satisfies the above four conditions is
and the resistance value R1 of the resistor 7 are determined as follows.

(4)式において、”” 1500であり、co= 3
[pF)、C0゜=too[pF’)を代入すればc、
 > tooo [pF)となり、c、C10[pF’
)、c、。C500[pF’)を代入すればC,>45
00[pF)  となる。したがってC,及びC3゜の
値に応じてC8として1000[pF]  以上の値を
選ぶことにより、(4)式で表わされる条件は満たされ
る。
In formula (4), “” is 1500 and co=3
If we substitute [pF) and C0°=too[pF'), we get c,
> too [pF), and c, C10[pF'
), c,. Substituting C500[pF') gives C,>45
00 [pF). Therefore, by selecting a value of 1000 [pF] or more as C8 according to the values of C and C3°, the condition expressed by equation (4) is satisfied.

(2)式において、R,I0+v0はコンデンサ8の端
子電圧を意味しているので、(2)式は次のように書き
改めることができる。
In equation (2), R, I0+v0 mean the terminal voltage of capacitor 8, so equation (2) can be rewritten as follows.

らばvoの影響による誤差が5チとなり規格で決められ
ている高電圧測定の許容誤差±3チの範囲内となる。ま
た断路器サージなどは最大サージと最小サージの比が2
o程度である。したがって11 ゜、。10vをvoの400倍にしておけば良く、(5
)式は次式のようになる。
The error due to the influence of Raba vo is 5 inches, which is within the tolerance range of ±3 inches for high voltage measurement determined by the standard. Also, for disconnector surges, the ratio of maximum surge to minimum surge is 2.
It is about o. Therefore, 11°. Just make 10v 400 times vo, (5
) formula becomes as follows.

f61 式+: オイ1”、C0=3〔pF〕、C5゜
C100[pF)、V=1500[KV ]  を代入
すればCa<5525[pF]となり、C9−10[p
F)、C,。C500[pF)、V=1500[KV]
を代入すれば、C,< 18250[1)F)  とな
る。したがってC3を20000[pF)  以下の適
切な値に選ぶことに、しり(2)式で表わされる条件は
満たされる。
f61 Formula +: Substituting Oi1'', C0=3[pF], C5°C100[pF], V=1500[KV], Ca<5525[pF], and C9-10[pF].
F), C,. C500 [pF], V=1500 [KV]
Substituting , we get C,< 18250[1)F). Therefore, by selecting C3 to an appropriate value of 20,000 [pF] or less, the condition expressed by equation (2) is satisfied.

(3)式において、(4)式及び(61式より次式の関
係が得られる。
In equation (3), the following relationship is obtained from equation (4) and equation (61).

[Krfl > R,6>4 [+<Ω〕を得る。した
がって1IIIをを〔願〕から5Q [KV)までの範
囲内の適切な値に選ぶことにLす、(3)式で表わされ
る条件は満たされる。
[Krfl > R, 6>4 [+<Ω] is obtained. Therefore, it is necessary to select an appropriate value for 1III within the range from [application] to 5Q [KV], and the condition expressed by equation (3) is satisfied.

ところで(Ca+C+o ) ”r””τ。のとき(3
)式は次式で表わされる。
By the way, when (Ca+C+o) "r""τ. (3
) is expressed by the following equation.

50 [mA) (−”−< 200 [rnA) −
1−f8)τ0 (8)式1:、3[pF] ≦co ≦10[pF] 
、”=1500[KV)を代入すれば、τ。の値として
22.5 x 10−”<τ。<300 x 1(r’
を得るが、この値は(1)式を満足している。すなわち
(2)式乃至(4)式を満足するCs+”aを選ぶこと
にLす(1)式は自動的に満足されることがわかる。
50 [mA) (-"-< 200 [rnA) -
1-f8) τ0 (8) Formula 1:, 3 [pF] ≦co ≦10 [pF]
,"=1500[KV], the value of τ is 22.5 x 10-"<τ. <300 x 1(r'
This value satisfies equation (1). That is, it can be seen that by selecting Cs+''a that satisfies equations (2) to (4), equation (1) is automatically satisfied.

以上説明したように第1条件乃至第4条件を満たすコン
デンサ8の容量値C6及び抵抗6の抵抗値比6は次式で
表わされる。
As explained above, the capacitance value C6 of the capacitor 8 and the resistance value ratio 6 of the resistor 6 that satisfy the first to fourth conditions are expressed by the following equation.

tooo[pF)≦C8≦20000 [pF’)・・
・・・・・・・(9)4[KΩ〕≦Rフ≦60[Kfl
)・・・・・・・・・・・・・・・00次に上述の構成
を有する本発明に係る密閉母線の内部診断装置の作用(
二ついて述べる。
too[pF)≦C8≦20000 [pF')...
・・・・・・・・・(9) 4[KΩ]≦Rf≦60[Kfl
)・・・・・・・・・・・・・・・00Next, the operation of the internal diagnosis device for a sealed busbar according to the present invention having the above-mentioned configuration (
I will talk about two things.

fFh線2 +=定4+2M+4圧例、tハロ6[KV
) 〜soo[KV)が課電されている場合は、上述の
範囲の値を有するコンデンサ8、抵抗7および発光ダイ
オード5.6から構成される回路には発光ダイオード5
,6を発光させる程の電流は流れない。しかし母線2に
正極性の異常電圧が発生した場合、シールド4に電圧が
発生し、発光ダイオード5を発光させる。
fFh line 2 + = constant 4 + 2M + 4 pressure example, t halo 6 [KV
) ~soo[KV), the circuit consisting of a capacitor 8, a resistor 7 and a light-emitting diode 5.6 having values in the range mentioned above has a light-emitting diode 5.
, 6 does not flow enough to cause them to emit light. However, when an abnormal voltage of positive polarity occurs on the bus bar 2, a voltage is generated on the shield 4, causing the light emitting diode 5 to emit light.

(尚負極性の異常電圧が発生した場合は発光ダイオード
6が発光する。)発光ダイオード5.6からの光は、ラ
イトガイド18.19を介してO/FJ変換器20.2
1+=導かれ、電気信号に変換される。
(If an abnormal voltage of negative polarity occurs, the light emitting diode 6 emits light.) The light from the light emitting diode 5.6 passes through the light guide 18.19 to the O/FJ converter 20.2.
1+ = guided and converted into an electrical signal.

それぞれの電気信号は差動増幅器22に伝送され、それ
ぞれの電気信号の差を求めることに上って正負両方の波
形を測定し、異常場所を検出することができる。
The respective electric signals are transmitted to the differential amplifier 22, and by determining the difference between the respective electric signals, both positive and negative waveforms can be measured, and an abnormal location can be detected.

ここでC,=2ooo[pF’) PL7=50[Kj
l]としたとき、発光ダイオード5.61−流れる電流
の周波数応答特性を第3図1−示す。高周波領域におい
ては、周波数応答特性は平担であることがわかる。また
商用周波などの低周波領域では発光ダイオード5,6に
は殆んど電流が流れないことがわかる。
Here C,=2ooo[pF') PL7=50[Kj
1], the frequency response characteristics of the current flowing through the light emitting diode 5.61 are shown in FIG. It can be seen that the frequency response characteristics are flat in the high frequency region. Further, it can be seen that almost no current flows through the light emitting diodes 5 and 6 in a low frequency region such as a commercial frequency.

〔発明の効果〕〔Effect of the invention〕

以上、本発明にLれば、母線に現われるサージ電圧(二
よって直接発光ダイオードを発光させることができ、回
路図かられかるしうに別置の゛電源は不要である。まだ
回路が単純である為信頼性が高く取付スペースも小さく
することができる。まだ発光ダイオードには密閉母線内
部に異常があった場合のみ高周波が流れ、通常時は発光
ダイオードは発光しない為、発光ダイオードの寿命が極
めて長くなるという利点を有する。また信号伝送手段と
してライトガイドを用いるので、サージ電圧による金属
シース電位の変動の影響や、他の制御線からの電気的誘
導の影響を受けないのでノイズを少なくでき、信頼性を
向上できる。
As described above, if the present invention is applied, the surge voltage appearing on the bus bar can cause the light emitting diode to emit light directly, and as can be seen from the circuit diagram, a separate power supply is not required.The circuit is still simple. It is highly reliable and requires a small installation space.However, high frequency waves flow through the light-emitting diode only when there is an abnormality inside the sealed busbar, and the light-emitting diode does not emit light under normal conditions, so the life of the light-emitting diode is extremely long. In addition, since a light guide is used as a signal transmission means, it is not affected by fluctuations in metal sheath potential due to surge voltage or electrical induction from other control lines, reducing noise and improving reliability. can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の原理を示す概略図、第2図は本発明の
一実施例を示す説明図、第3図は本発明に係る内部診断
装置の特徴的な周波数応答特性を示すクラブである。 1・・・金属シース   2・・・母線3・・・絶縁ス
ペーサ  4・・・シールド5.6・・・発光ダイオー
ド 18 、19・・・ライトガイド20.21・・・
光−電気変換器 22・・・差動増幅器 (7317)  代理人弁理士 則 近 憲 佑 (ほ
か1名)第1図 第2図 第3図 オ日i4ゲイン 1−/AH7!    /4H2/θ4’+’z   
  /θθ4n、     /〜〃ン廚シ皮1( 手続補正書(自発) 415ま1.是48 特許庁長官殿 1、事件の表示 特願昭57−112559号 2、発明の名称 密閉母線の内部診断装置 3、補正をする者 事件との関係 特許出願人 (307)東京芝浦電気株式会社 4、代理人 〒100 束基部千代田区内幸町1−1−6 東京芝浦電気株式会社釆万(φ詮所内 1、 明細書の「発明の詳細な説明」の欄6、補正の内
容 (1)本願明細書第10頁第3行目に記載の以上
FIG. 1 is a schematic diagram showing the principle of the present invention, FIG. 2 is an explanatory diagram showing an embodiment of the present invention, and FIG. 3 is a club diagram showing the characteristic frequency response characteristics of the internal diagnostic device according to the present invention. be. 1... Metal sheath 2... Bus bar 3... Insulating spacer 4... Shield 5.6... Light emitting diode 18, 19... Light guide 20.21...
Optical-electrical converter 22...Differential amplifier (7317) Patent attorney Noriyuki Chika (and 1 other person) Figure 1 Figure 2 Figure 3 Ohni i4 gain 1-/AH7! /4H2/θ4'+'z
/θθ4n, /~〃n廚し skin 1 (Procedural amendment (spontaneous) 415/1. Correct 48 Commissioner of the Japan Patent Office 1, Indication of the case, Japanese Patent Application No. 112559/1982, 2, Name of the invention: Internal diagnosis of sealed bus bar Apparatus 3, relationship with the case of the person making the amendment Patent applicant (307) Tokyo Shibaura Electric Co., Ltd. 4, Agent 1-1-6 Uchisaiwai-cho, Chiyoda-ku, Tsukubai 100 Tokyo Shibaura Electric Co., Ltd. Kaman (φ 1 in the office) , Column 6 of "Detailed Description of the Invention" of the specification, Contents of amendment (1) The above stated on page 10, line 3 of the specification of the application

Claims (1)

【特許請求の範囲】 fl)  正負逆方向に並列接続される一対の発光ダイ
オードと、前記ダイオードに直列接続される抵抗とから
なる回路に並列接続されるコンデンサとからなる回路を
有し、この回路1:おけるコンデンサの一端は充電部を
支持する絶縁スペーサに埋設されるシールドに、他端は
接地電位に接続して成り、前記発光ダイオードからの光
を導く一対のライトガイドからの夫々の信号を変換器に
より電気信号に変換し、この変換器からの夫々の電気信
号を比較し出力する装置とから構成される密閉母線の内
部診断装置。 (2)抵抗の抵抗値がIOKΩ以上100にΩ以下で、
かつコンデンサの静電容量値が1000pF以上200
0pF 以下であることを特徴とする特記請求の範囲第
1・項記載の密閉母線の内部診断装置。
[Claims] fl) A circuit comprising a capacitor connected in parallel to a circuit comprising a pair of light emitting diodes connected in parallel in opposite positive and negative directions and a resistor connected in series to the diodes, this circuit 1: One end of the capacitor is connected to a shield embedded in an insulating spacer that supports a live part, and the other end is connected to ground potential, and each signal from a pair of light guides that guide light from the light emitting diode is connected to the shield. An internal diagnosis device for a sealed bus bar, which is comprised of a device that converts into electrical signals using a converter, compares and outputs the respective electrical signals from the converters. (2) The resistance value of the resistor is IOKΩ or more and 100Ω or less,
and the capacitance value of the capacitor is 1000pF or more200
The internal diagnostic device for a sealed bus bar according to claim 1, characterized in that the voltage is 0 pF or less.
JP11255982A 1982-07-01 1982-07-01 Apparatus for diagnosis of interior of enclosed bus bar Pending JPS595970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11255982A JPS595970A (en) 1982-07-01 1982-07-01 Apparatus for diagnosis of interior of enclosed bus bar

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11255982A JPS595970A (en) 1982-07-01 1982-07-01 Apparatus for diagnosis of interior of enclosed bus bar

Publications (1)

Publication Number Publication Date
JPS595970A true JPS595970A (en) 1984-01-12

Family

ID=14589699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11255982A Pending JPS595970A (en) 1982-07-01 1982-07-01 Apparatus for diagnosis of interior of enclosed bus bar

Country Status (1)

Country Link
JP (1) JPS595970A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020109398A (en) * 2018-12-28 2020-07-16 パロ アルト リサーチ センター インコーポレイテッド Partial discharge detector
CN113358953A (en) * 2021-05-31 2021-09-07 国网河南省电力公司方城县供电公司 Female state discriminating gear of pipe

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020109398A (en) * 2018-12-28 2020-07-16 パロ アルト リサーチ センター インコーポレイテッド Partial discharge detector
CN113358953A (en) * 2021-05-31 2021-09-07 国网河南省电力公司方城县供电公司 Female state discriminating gear of pipe
CN113358953B (en) * 2021-05-31 2022-09-20 国网河南省电力公司方城县供电公司 Female state discriminating gear of pipe

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