JPS5956754U - Power semiconductor equipment - Google Patents
Power semiconductor equipmentInfo
- Publication number
- JPS5956754U JPS5956754U JP15285482U JP15285482U JPS5956754U JP S5956754 U JPS5956754 U JP S5956754U JP 15285482 U JP15285482 U JP 15285482U JP 15285482 U JP15285482 U JP 15285482U JP S5956754 U JPS5956754 U JP S5956754U
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor equipment
- heat sink
- thinner
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の電力用ＧａＡｓ ＦＥＴの断面図、′
第２図は本考案の一実施例による電力用ＧａＡｓ Ｆ
ＥＴの断面−である。
１．９・・・・・・半絶縁性基板、２．１０・・・・・
・ｎ形半導体層、β、１１・・・・・・ゲート電極、４
，１２・・・・・・ソース電極、５．１３・・・・・・
ドレン電極、６．１４・・・・・・金属薄層、７・・・
・・・ソルダー、１５・・・・・・ソルダーまたはメッ
キ層、８．１６・・・・・・放熱体。Figure 1 is a cross-sectional view of a conventional power GaAs FET.
FIG. 2 shows a power-use GaAs F according to an embodiment of the present invention.
This is a cross section of ET. 1.9... Semi-insulating substrate, 2.10...
・N-type semiconductor layer, β, 11...Gate electrode, 4
, 12... Source electrode, 5.13...
Drain electrode, 6.14... Metal thin layer, 7...
... Solder, 15 ... Solder or plating layer, 8.16 ... Heat sink.
Claims (1)
域下よりも薄くなるように底面に凹部が設けられた半導
体基板と、前爬凹部に設けられた金属層とを有し、当該
金属層側を放熱板に取り付けたことを特徴とする電力用
半導体装置。゛ A semiconductor substrate having a recessed portion on the bottom surface such that the thickness of the portion corresponding to the lower part of the element operating area is thinner than that under the peripheral area of the element, and a metal layer provided in the front recessed part; A power semiconductor device characterized by having one side attached to a heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15285482U JPS5956754U (en) | 1982-10-08 | 1982-10-08 | Power semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15285482U JPS5956754U (en) | 1982-10-08 | 1982-10-08 | Power semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5956754U true JPS5956754U (en) | 1984-04-13 |
Family
ID=30338341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15285482U Pending JPS5956754U (en) | 1982-10-08 | 1982-10-08 | Power semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5956754U (en) |
-
1982
- 1982-10-08 JP JP15285482U patent/JPS5956754U/en active Pending
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