JPS5955077A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS5955077A JPS5955077A JP57165504A JP16550482A JPS5955077A JP S5955077 A JPS5955077 A JP S5955077A JP 57165504 A JP57165504 A JP 57165504A JP 16550482 A JP16550482 A JP 16550482A JP S5955077 A JPS5955077 A JP S5955077A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer
- semiconductor layer
- photovoltaic device
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000006866 deterioration Effects 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 241000951471 Citrus junos Species 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 6
- 229910000077 silane Inorganic materials 0.000 abstract description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 abstract 1
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 150000003376 silicon Chemical class 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
に１ 産業上の利用分野
本発明は元エネルギを電気エネルギに直接変換Ｔる光起
電力装置に関Ｔる□。 □（口１従来技
術
非晶質シリコン等の非晶質半導体を備えた光起電力装置
が従来の：単結晶シリコシから成る光起電力１ｉｆｔｓ
：Ｍ＜エヤ□□に； （Ｄ ：ｌオ、。、＝、ヶ。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a photovoltaic device that directly converts source energy into electrical energy. □(1) Conventional technology A photovoltaic device equipped with an amorphous semiconductor such as amorphous silicon is conventional: A photovoltaic device made of single-crystal silicon
:M＜Eya□□ni; (D:loh,.,=,month.
えう、：脚光ヶ浴、′、Ｃ′コ、う。 □然し乍
ら、斯る一ｐ４．．質牟起電力装置は一知の如く単結晶
装置ｇ：比して光エネルギを直接電気エネル□ギＣ巳゛
変換Ｔる際の光電変換効率（η）か低いことか最大の問
題点とな４でお□す、従来から光量変換効率を如何に上
昇すしめ□るかが研究・開発の第一方、非晶質光起電力
装ａｉ上述の如き晃電変換効率の低率のみならず１強い
晃を長時間ＷＡ射し労瑞合ｉ二上□記ＩＱｉｉ綾換効：
率が低下Ｔることが実′験的に確認されたり
？］発明の目的
本発明は斯る光電変換効率の低下、ｕ［１ち劣化？防１
（−Ｔることを目的とし１為されたものである。Eh, : limelight, ', C', uh. □However, such one p4. ．． As is well known, the biggest problem with single-crystal electromotive devices is that the photoelectric conversion efficiency (η) when converting light energy directly into electrical energy is low compared to single-crystal devices. The first step in research and development is how to increase the light intensity conversion efficiency, which we will discuss in Section 4. 1. Strong Akira is fired as WA for a long time, and the effect of IQii Aya is as follows:
Has it been experimentally confirmed that the rate decreases? ] Purpose of the Invention The present invention aims to reduce such a decrease in photoelectric conversion efficiency, u[1, deterioration? Defense 1
(It was made with the purpose of
以下に内面を参照しつつ詳述下る。The details will be explained below with reference to the inside.
（１発明の構［戊
（２）は該基板ｆｉ＋の一重部に被着された酸化スズ、
酸化インジウム・スズ等の透明電極膜、（３）は該透明
矩′、極膜（２）ヒにシラン５ｉｎ４等のグロー放電に
より形成された非晶質シリコン系の半導体層、（４）は
該半導体層（３１−ヒに更に重畳されたアルミニウム。(1) Structure of the invention [(2) is tin oxide deposited on a single portion of the substrate fi+;
A transparent electrode film such as indium tin oxide, (3) is the transparent rectangle, a polar film (2) is an amorphous silicon semiconductor layer formed by glow discharge of silane 5in4, etc., and (4) is the transparent rectangle. Semiconductor layer (aluminum further superimposed on 31-A).
チタン等の裏面′電極膜である。The backside electrode film is made of titanium or the like.
而して１本発明の特徴は上記半導体層（３）の組［戊に
ある。即ち、上記半導体層（３１は光入射側である透明
電極１１傳］２）側からＰ型層（３ｐ）、夏型（負性〕
層（３１）及びＮ型層（、ｒ＋ｎ）を順次積層せしめた
ＰＩＮ接合型構造を持ち、更に詳しくはＰ型層（３Ｐ）
はシラン５ｉＨ４７０９５に対し３０ｑ６のメタンＣＨ
４にドーピングガスとして０．５＋ジボランＢ２Ｈ６を
含む雰囲気中でのグロー放電により形成された非晶質シ
リコンカーバイド（ａ−５” Ｘ Ｃ１−ｘ）かＦ〕１
ノにり、夏型Ｍ（３１１ＪＳｉ入暫
Ｈ４ガスにシリコンを除く第ｉＶ、、元紫例えば炭素Ｃ
。One feature of the present invention lies in the above-mentioned set of semiconductor layers (3). That is, the P-type layer (3p), the summer type (negative)
It has a PIN junction type structure in which a layer (31) and an N-type layer (, r+n) are sequentially laminated, and more specifically, a P-type layer (3P).
is 30q6 methane CH for silane 5iH47095
Amorphous silicon carbide (A-5"
Nonori, summer type M (311JSi entering temporary H4 gas excluding silicon, original purple e.g. carbon C
.
ゲルマニウムＧ 、スズＳ などの水素化ガス（元素と
非晶質シリコンとの化合物かＲＩｙＱす、−ｆ＋、。Hydrogen gases such as germanium G and tin S (compounds of elements and amorphous silicon, RIyQ, -f+, etc.).
て、Ｎ型層（ろｎ）はＳｉＨ４ガスにホスフィンＰＨ５
’＆１％ドーピングして形成された非晶質シリコン（ａ
−Ｓ ｉ ： Ｈ）から構１戊きれている。この杼１
”−Ｓ ｉ Ｈ４Ｙ主成分とＴる雰囲気中でのグロー放
′町により形成された上記Ｐ型層（３ｐ）、１型層（３
１）及びＮ型層（５ｎ）の各膜厚は例えている。The N-type layer (Lon) is made of SiH4 gas and phosphine PH5.
'& 1% doped amorphous silicon (a
-S i: It is completely separated from H). This shuttle 1
The above P-type layer (3p) and 1-type layer (3p) formed by glow emission in an atmosphere of ``-S i H4Y main component and T atmosphere.
1) and the N-type layer (5n) are shown as examples.
第２図は１−述の如き構成にある光起電力装置■−於い
て、炭素Ｃの夏型層（３１）に於ける含有量をパラメー
タとして光電変換効率（η）の経時空化！測定した特性
図である。同図に於いて、縦軸は炭素Ｃの含有量そのも
θ月二上り膜質が変化Ｔるために、該光電変換効率（η
）′？初期値で規格化したものであり、横軸は５００ｍ
Ｗ／ｃＪのＡＩＪ −１光の照射時間である。Figure 2 shows 1--In a photovoltaic device having the configuration as described above, the photoelectric conversion efficiency (η) changes over time using the carbon C content in the summer type layer (31) as a parameter. It is a diagram of measured characteristics. In the figure, the vertical axis shows the photoelectric conversion efficiency (η
)'? It is normalized to the initial value, and the horizontal axis is 500m.
This is the irradiation time of AIJ-1 light of W/cJ.
尚、測定に供せられた光起電力装置の炭素Ｃの含有量は
以下の通りである。The carbon C content of the photovoltaic device used for measurement is as follows.
上記、含有量はＩ型層（５１）が形成される雰囲気中の
混合ガス比率である−
により与えられる。The above content is given by - which is the mixed gas ratio in the atmosphere in which the I-type layer (51) is formed.
この様に、発電即ち、光電変換効率（η）に寄与下る電
子及び正孔対が主として発生し半導体層（３１の大部分
を占める夏型、＠（３１）に炭素ＣＹ添加Ｔると、光を
変換効率（η）の劣化特骨は変動し、しかもその変動幅
は炭素Ｃの添加量Ｚ増せば増゛Ｔはど縮小−ｒるもので
はなく、上記測定結果によれば試料（Ｃ）の２％の時最
小の変動幅が得られ、試料（ｂ）及び（ｄ）に於いても
略満足のいく結果が得られた。然し乍ら、炭素Ｃの含有
量がＰ型層 （３ｐ ）に含存せしめられる程闇の５０
９５以上になるとバンドギャップエネルギが変動すると
共に、膜質も悪化し初期特性も低下下るので好ましくな
い。In this way, electrons and hole pairs that contribute to power generation, that is, photoelectric conversion efficiency (η), are mainly generated, and when carbon CY is added to the semiconductor layer (31), The deterioration characteristics of the conversion efficiency (η) fluctuate, and the width of the fluctuation increases as the amount Z of carbon C increases. The smallest fluctuation range was obtained when the carbon C content was 2%, and almost satisfactory results were obtained for samples (b) and (d). 50 dark enough to be contained
If it exceeds 95, the bandgap energy will fluctuate, the film quality will deteriorate, and the initial characteristics will also deteriorate, which is not preferable.
従って、上述の如く第■族元素として炭素Ｃを含んだ光
起電力装置にあっては、その含有量は約０．１％〜１０
％か好適であり、特１：２９６近傍が好ましい。また上
述の範囲内で含＊＊ｗＩ型層（５１）に於いて光入射側
から所次減少せしめても良Ｉ／Ｎ。Therefore, as mentioned above, in a photovoltaic device containing carbon C as a Group Ⅰ element, its content is approximately 0.1% to 10%.
% is suitable, especially around 1:296. Also, within the above range, the I/N may be reduced from the light incident side in the I type layer (51).
次にゲルマニウムＧｏの夏型＠（３１）に於ケる含有量
であるか、含有量が多くなるとバンドギャップエネルギ
が変動下るので上記炭素Ｃ４考慮し約０．１９５〜５ｑ
６が適当である。Next, the content should be in the summer form of germanium Go (31), or the bandgap energy will fluctuate as the content increases, so considering the carbon C4 mentioned above, it should be about 0.195 to 5q.
6 is appropriate.
更にスズＳ ｎ ＣＤ Ｉ型層（３１）に於ける含有量
はバンドギャップエネルギの変動のみならず、嗅質への
悪影響が著しいために、先の炭素Ｃ，ゲルマニウムＧｏ
に較べ少ないことが望ましく、約０゜０１９６〜５％ｉ
が適当である。Furthermore, the content of tin in the Sn CD type I layer (31) not only changes the bandgap energy but also has a significant negative effect on the olfactory substance.
It is desirable that it is less than
is appropriate.
（ホ）効 果
本発明光起電力装置は以上の説明から明らかな如く１発
電に寄与下る電子及びまたは正孔対を発生下る非晶質シ
リコン系の半導体層はシリコン並びに該シリコンを除く
少量の第■族元素を含んでいるので、光照射による光電
変換効率の劣化を防止下ることができ、今まで研究開発
の＠１の目標とされていた光電変換効率を違った観点か
ら実質的にＬ昇せしめることができる。(E) Effect As is clear from the above explanation, the photovoltaic device of the present invention generates electrons and/or hole pairs that contribute to one power generation.The amorphous silicon semiconductor layer contains silicon and a small amount of Since it contains Group Ⅰ elements, it is possible to prevent deterioration of photoelectric conversion efficiency due to light irradiation, and it is possible to substantially reduce the photoelectric conversion efficiency from a different perspective, which was the goal of research and development @1 until now. It can be raised.
第１図は本発明装置の断面間、第２図は光電変換効率の
経時変化を測定した特性図で、（１）は基板。
（３１は半導体層、を夫々示している。
第１図FIG. 1 is a cross-sectional view of the device of the present invention, and FIG. 2 is a characteristic diagram showing the change in photoelectric conversion efficiency over time. (1) is a substrate. (31 indicates a semiconductor layer, respectively.)
Claims (1)
光起電力装置に於いて、上記半□導体層はシリコン並び
にｉシリコン！除く少量の第１■族元紫を合み、光照射
に□よる光１ｊＬ＊換効率の劣□化を防止したこ逅赫特
徴と下る光起電力装置。 ′ １ ′（２）
上記半導体層に含存される少量の更■族元素は炭素であ
って、そフ釡有’＊＃薔約０．□１９５〜１０９５＋あ
ることン特徴とした特鉢柚ｉ＊ｊ範囲第１楢記戦の□光
起電力装置。 ： ′（３１上記
半導体層に′含有される少量の第■族呆素はゲルマヨウ
云であってａ” ”Ｃ（’） ’ｌ有１に一約０：、１
□％〜５９５であることを特徴とする特許請求の範−更
１項記載の光し電力装−０□ （４）上記半導体層に含有□される少電ア第□■゛族□
元素は□スズであって、′その釜材量ｆｌ約０．０１９
６〜３′％であることを特徴とする特許ｉ求の範囲第１
項□ξ己載め光起電力装置。
′[Claims] +1J Amorphous silicon-based semiconductor layer i', t' In the photovoltaic device, the semiconductor layer is silicon and i-silicon! This photovoltaic device is characterized by containing a small amount of group 1 element violet and preventing deterioration of the light 1jL* conversion efficiency due to light irradiation. '1'(2)
The small amount of the metallurgical group element contained in the semiconductor layer is carbon, which is approximately 0.5% carbon. □195~1095+ □Photovoltaic device of special pottery yuzu i*j range 1st Narakki battle with certain characteristics. : '(31) The small amount of group ⅆ element contained in the above semiconductor layer is germanium and has a ratio of about 1 to 0:1.
□% to 595% - 0□ Optical power device according to claim 1, characterized in that the amount is □% to 595%.
The element is □tin, and the pot material amount fl is approximately 0.019
6-3'%
Item □ξSelf-loaded photovoltaic device.
′
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57165504A JPS5955077A (en) | 1982-09-22 | 1982-09-22 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57165504A JPS5955077A (en) | 1982-09-22 | 1982-09-22 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5955077A true JPS5955077A (en) | 1984-03-29 |
Family
ID=15813644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57165504A Pending JPS5955077A (en) | 1982-09-22 | 1982-09-22 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5955077A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63138324U (en) * | 1987-03-04 | 1988-09-12 | ||
| JPH01143363A (en) * | 1987-11-30 | 1989-06-05 | Hitachi Ltd | Manufacture of amorphous solar cell |
| US5039358A (en) * | 1989-02-01 | 1991-08-13 | Siemens Aktiengesellschaft | Amorphous, hydrogenated carbon electroactive passivation layer |
| JPH03252171A (en) * | 1990-02-28 | 1991-11-11 | Sharp Corp | Amorphous solar cell |
| EP2290766A3 (en) * | 2009-08-28 | 2015-04-22 | m2k-laser GmbH | High performance diode laser and method of producing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
| JPS5778183A (en) * | 1980-09-09 | 1982-05-15 | Energy Conversion Devices Inc | Photoresponse amorphous alloy and method of producing same |
-
1982
- 1982-09-22 JP JP57165504A patent/JPS5955077A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
| JPS5778183A (en) * | 1980-09-09 | 1982-05-15 | Energy Conversion Devices Inc | Photoresponse amorphous alloy and method of producing same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63138324U (en) * | 1987-03-04 | 1988-09-12 | ||
| JPH01143363A (en) * | 1987-11-30 | 1989-06-05 | Hitachi Ltd | Manufacture of amorphous solar cell |
| US5039358A (en) * | 1989-02-01 | 1991-08-13 | Siemens Aktiengesellschaft | Amorphous, hydrogenated carbon electroactive passivation layer |
| JPH03252171A (en) * | 1990-02-28 | 1991-11-11 | Sharp Corp | Amorphous solar cell |
| EP2290766A3 (en) * | 2009-08-28 | 2015-04-22 | m2k-laser GmbH | High performance diode laser and method of producing the same |
| US9450375B2 (en) | 2009-08-28 | 2016-09-20 | M2K-Laser Gmbh | High-power diode laser and method for producing a high-power diode laser |
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