JPS5945695A - Ic memory - Google Patents

Ic memory

Info

Publication number
JPS5945695A
JPS5945695A JP15721782A JP15721782A JPS5945695A JP S5945695 A JPS5945695 A JP S5945695A JP 15721782 A JP15721782 A JP 15721782A JP 15721782 A JP15721782 A JP 15721782A JP S5945695 A JPS5945695 A JP S5945695A
Authority
JP
Japan
Prior art keywords
frequency
writing
control
eeprom3
rewriting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15721782A
Inventor
Yuichi Furukawa
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15721782A priority Critical patent/JPS5945695A/en
Publication of JPS5945695A publication Critical patent/JPS5945695A/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Abstract

PURPOSE:To control the frequency of writing to a rewritable PROM easily and securely, by disposing a circuit which controls the frequency of writing and a general data storage circuit discretely on the same substrate. CONSTITUTION:The writing and reading of the rewritable PROM (EEPROM) 3 are controlled through the 1st control part 1a. The frequency of the rewriting of the EEPROM3 is counted and stored by the 2nd control part 2a, counter 5, EEPROM7, etc., and compared by a comparing part 6a with the limit value of an ROM4a to control the rewriting frequency of the EEPROM3. The EEPROM3 including this general data storage circuit and a writing frequency control circuit including the control part 2a, counter 5, EEPROM7, ROM4a, comparing part 6a, etc., are disposed discretely on the same chip 10, and their outputs are sent out through different terminals. This constitution controls the rewriting frequency of the rewritable programmable ROM easily and securely.
JP15721782A 1982-09-07 1982-09-07 Ic memory Pending JPS5945695A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15721782A JPS5945695A (en) 1982-09-07 1982-09-07 Ic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15721782A JPS5945695A (en) 1982-09-07 1982-09-07 Ic memory

Publications (1)

Publication Number Publication Date
JPS5945695A true JPS5945695A (en) 1984-03-14

Family

ID=15644773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15721782A Pending JPS5945695A (en) 1982-09-07 1982-09-07 Ic memory

Country Status (1)

Country Link
JP (1) JPS5945695A (en)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
WO1994023369A1 (en) * 1993-03-26 1994-10-13 Cirrus Logic, Inc. Flash memory mass storage architecture
US5388083A (en) * 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6040997A (en) * 1998-03-25 2000-03-21 Lexar Media, Inc. Flash memory leveling architecture having no external latch
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6081447A (en) * 1991-09-13 2000-06-27 Western Digital Corporation Wear leveling techniques for flash EEPROM systems
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
US7120729B2 (en) 2002-10-28 2006-10-10 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system
US8040727B1 (en) 1989-04-13 2011-10-18 Sandisk Corporation Flash EEprom system with overhead data stored in user data sectors
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed

Cited By (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835415A (en) * 1988-06-08 1998-11-10 Harari; Eliyahou Flash EEPROM memory systems and methods of using them
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5862081A (en) * 1988-06-08 1999-01-19 Harari; Eliyahou Multi-state flash EEPROM system with defect management including an error correction scheme
US5434825A (en) * 1988-06-08 1995-07-18 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US5544118A (en) * 1988-06-08 1996-08-06 Harari; Eliyahou Flash EEPROM system cell array with defect management including an error correction scheme
US5568439A (en) * 1988-06-08 1996-10-22 Harari; Eliyahou Flash EEPROM system which maintains individual memory block cycle counts
US5583812A (en) * 1988-06-08 1996-12-10 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5909390A (en) * 1988-06-08 1999-06-01 Harari; Eliyahou Techniques of programming and erasing an array of multi-state flash EEPROM cells including comparing the states of the cells to desired values
US5642312A (en) * 1988-06-08 1997-06-24 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5712819A (en) * 1988-06-08 1998-01-27 Harari; Eliyahou Flash EEPROM system with storage of sector characteristic information within the sector
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US5719808A (en) * 1989-04-13 1998-02-17 Sandisk Corporation Flash EEPROM system
US5999446A (en) * 1989-04-13 1999-12-07 Sandisk Corporation Multi-state flash EEprom system with selective multi-sector erase
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system
US5936971A (en) * 1989-04-13 1999-08-10 Sandisk Corporation Multi-state flash EEprom system with cache memory
US8040727B1 (en) 1989-04-13 2011-10-18 Sandisk Corporation Flash EEprom system with overhead data stored in user data sectors
US6373747B1 (en) 1989-04-13 2002-04-16 Sandisk Corporation Flash EEprom system
US6850443B2 (en) 1991-09-13 2005-02-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6594183B1 (en) 1991-09-13 2003-07-15 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US7353325B2 (en) 1991-09-13 2008-04-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6081447A (en) * 1991-09-13 2000-06-27 Western Digital Corporation Wear leveling techniques for flash EEPROM systems
WO1994023369A1 (en) * 1993-03-26 1994-10-13 Cirrus Logic, Inc. Flash memory mass storage architecture
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
US5388083A (en) * 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6912618B2 (en) 1995-07-31 2005-06-28 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6128695A (en) * 1995-07-31 2000-10-03 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US6393513B2 (en) 1995-07-31 2002-05-21 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6145051A (en) * 1995-07-31 2000-11-07 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US6172906B1 (en) 1995-07-31 2001-01-09 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6223308B1 (en) 1995-07-31 2001-04-24 Lexar Media, Inc. Identification and verification of a sector within a block of mass STO rage flash memory
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6327639B1 (en) 1997-12-11 2001-12-04 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6040997A (en) * 1998-03-25 2000-03-21 Lexar Media, Inc. Flash memory leveling architecture having no external latch
US6134151A (en) * 1999-04-01 2000-10-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6760255B2 (en) 2000-02-17 2004-07-06 Sandisk Corporation Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6996008B2 (en) 2000-02-17 2006-02-07 Sandisk Corporation Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6580638B2 (en) 2000-02-17 2003-06-17 Sandisk Corporation Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
US7552272B2 (en) 2002-10-28 2009-06-23 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US7120729B2 (en) 2002-10-28 2006-10-10 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US10049207B2 (en) 2004-04-30 2018-08-14 Micron Technology, Inc. Methods of operating storage systems including encrypting a key salt
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed

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