JPS5942197A - Solder - Google Patents
SolderInfo
- Publication number
- JPS5942197A JPS5942197A JP15321182A JP15321182A JPS5942197A JP S5942197 A JPS5942197 A JP S5942197A JP 15321182 A JP15321182 A JP 15321182A JP 15321182 A JP15321182 A JP 15321182A JP S5942197 A JPS5942197 A JP S5942197A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- aluminum
- electrode
- soldering
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
Abstract
Description
【発明の詳細な説明】
この発明は電極をアルミニラＬ ７７ｇ着法により形成
した太陽電池等半導体の電極の半田付を行うのに使用す
る半田を提供せんとする。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a solder for use in soldering electrodes of semiconductors such as solar cells, the electrodes of which are formed by the Aluminum L 77g bonding method.
〔２〕 従来の欠点
第１図に示すのは太陽電池の断面図であるが、Ｐ型のシ
リコン基板（１）の表面側にＮ型拡散層（２）を形成し
、裏面側にＰ＋層（３）を形成し、その表面及び裏面に
アルミニウム蒸着による電極［４１，（５１を形成して
いる。受光面となるＮ型拡散層（２）には光の反射防止
膜（６）が設けられている。[2] Disadvantages of the conventional method Figure 1 shows a cross-sectional view of a solar cell.In this case, an N-type diffusion layer (2) is formed on the front side of a P-type silicon substrate (1), and a P+ layer is formed on the back side. (3) is formed, and electrodes [41, (51) are formed by aluminum vapor deposition on the front and back surfaces.An anti-reflection film (6) is provided on the N-type diffusion layer (2) which becomes the light receiving surface. It is being
このような大腸電池において従来の錫、亜鉛半田を用い
てアルミニウムの電極（４）−ヒに半田付けを行なうと
半田（７）中にアルミニウムが拡散していき最終的には
アルミニウム電極が剥離する欠点がある。尚、かかる欠
点が生ずるのは太陽電池のみでなく、アルミニウム蒸着
により電極を形成した半導体全般についてである。When soldering the aluminum electrode (4)--H in such a colon battery using conventional tin and zinc solder, the aluminum diffuses into the solder (7) and eventually the aluminum electrode peels off. There are drawbacks. Incidentally, this drawback occurs not only in solar cells but also in general semiconductors in which electrodes are formed by aluminum vapor deposition.
〔３〕 発明の構成及び実施例
この発明は上記欠点を除去せんとするものであり、その
要旨とするところは、アルミニウムを含む錫、亜鉛合金
系の半田である。[3] Structure and Examples of the Invention The present invention aims to eliminate the above-mentioned drawbacks, and its gist is a tin-zinc alloy based solder containing aluminum.
即ち、製品たる錫、亜鉛合金系の半田にアルミニウムを
溶かし込んでおきこれにより半田付けの際のアルミニウ
ム拡散を防きアルミニウム電極の剥離を防止するもので
ある。That is, aluminum is melted into the tin-zinc alloy solder product, thereby preventing aluminum diffusion during soldering and preventing peeling of the aluminum electrode.
錫、亜鉛の合金系へ溶かすアルミニウムの量は飽和量ま
で溶かすとこの半田中へアルミニウムの電極が拡散する
のを完全に防止することができるのであるが、錫、亜鉛
の合金系へ溶は込むアルミニウムの量が増加すると半田
の融点も上昇する。If the amount of aluminum melted into the tin-zinc alloy system reaches a saturation level, it will be possible to completely prevent the aluminum electrode from diffusing into the solder, but it will melt into the tin-zinc alloy system. As the amount of aluminum increases, the melting point of the solder also increases.
そして半田付けの温度が４００℃以上になると電極とし
てのアルミニウムがシリコン基板中に拡散していき太陽
電池の特性を著るしく劣化させる。If the soldering temperature exceeds 400° C., aluminum serving as an electrode will diffuse into the silicon substrate, significantly degrading the characteristics of the solar cell.
従って錫、亜鉛合金系へ溶かし込むアルミニウムの居が
重要な意味を持ち、これに関連してその使用（半田付け
）温度、さらにぼアルミニウム電極の厚みが問題となる
。Therefore, the presence of aluminum melted into the tin-zinc alloy system is important, and related to this, the temperature at which it is used (soldering) and the thickness of the aluminum electrode are important issues.
次に示すのはこの発明の好ましい一実施例である。The following is a preferred embodiment of this invention.
錫と亜鉛の重量比が４０：６０の合金系１００ｇ中にア
ルミニウムを０．５ｇ溶かし込んだ合金でなる半田を形
成し、この半田を用い厚さ１．５μの膜厚を持つアルミ
ニウムの蒸着により形成した電極に３５０℃の温度で所
要時間５秒間の半田伺けをおこなったところ、第１図の
表面側又は裏面側の全面蒸着の電極においてもスポット
蒸着の電極のいずれにおいても電極の剥離をおこすこと
なく半日］付けを行なうことができた。この実施例のよ
うにこの発明による半田は錫、亜鉛合金系へのアルミニ
ウムの溶かし込み量は錫と亜鉛の重量比４０：６０の合
金系１００ｇ中にアルミニウム０．４乃至０６ｇ前後を
溶かし込んだものが良好な性能を示す。A solder made of an alloy is formed by dissolving 0.5 g of aluminum into 100 g of an alloy system with a weight ratio of tin and zinc of 40:60, and using this solder, aluminum is vapor-deposited to a thickness of 1.5 μm. When the formed electrodes were soldered for 5 seconds at a temperature of 350°C, no peeling of the electrodes occurred on either the front side or the back side of the electrode, whether it was deposited on the entire surface or on the back side, as well as the spot-deposited electrode. I was able to do this for half a day without waking up. As shown in this example, the amount of aluminum dissolved into the tin and zinc alloy in the solder according to the present invention is approximately 0.4 to 0.6 g of aluminum dissolved in 100 g of the alloy with a weight ratio of tin and zinc of 40:60. things show good performance.
〔４〕 発明の効果
上記のようにこの発明による半田は、アルミニウム合金
でなるから、従来半田付は時に溶は込み剥離するおそれ
のあったアルミニウムの蒸着電極に対しても使用ができ
るのである。[4] Effects of the Invention As described above, since the solder according to the present invention is made of an aluminum alloy, it can also be used for vapor-deposited aluminum electrodes, where conventional soldering sometimes caused melt penetration and peeling.
第１図及び第２図に示すのはこの発明の一実施例を示す
断面図である。
特許出願人
松下電工株式会社
代理人弁理士 竹 元 敏 丸
（ほか２名）1 and 2 are sectional views showing one embodiment of the present invention. Patent applicant Matsushita Electric Works Co., Ltd. Representative patent attorney Toshimaru Takemoto (and 2 others)
Claims (1)
錫、亜鉛合金で成る半田。(Solder made of tin and zinc alloy with 110.4% to 0.6% aluminum melted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15321182A JPS5942197A (en) | 1982-08-31 | 1982-08-31 | Solder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15321182A JPS5942197A (en) | 1982-08-31 | 1982-08-31 | Solder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5942197A true JPS5942197A (en) | 1984-03-08 |
Family
ID=15557471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15321182A Pending JPS5942197A (en) | 1982-08-31 | 1982-08-31 | Solder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5942197A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5143865A (en) * | 1988-09-02 | 1992-09-01 | Kabushiki Kaisha Toshiba | Metal bump type semiconductor device and method for manufacturing the same |
| WO2002034969A1 (en) * | 2000-10-24 | 2002-05-02 | Fujitsu Limited | Alloy for solder and solder joint |
| US6853077B2 (en) | 2001-10-01 | 2005-02-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device, semiconductor packaging method, assembly and method for fabricating the same |
| WO2007029329A1 (en) * | 2005-09-09 | 2007-03-15 | Fujitsu Limited | Solder alloy, and making use of the solder alloy, electronic substrate and process for producing the same |
-
1982
- 1982-08-31 JP JP15321182A patent/JPS5942197A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5143865A (en) * | 1988-09-02 | 1992-09-01 | Kabushiki Kaisha Toshiba | Metal bump type semiconductor device and method for manufacturing the same |
| WO2002034969A1 (en) * | 2000-10-24 | 2002-05-02 | Fujitsu Limited | Alloy for solder and solder joint |
| US6853077B2 (en) | 2001-10-01 | 2005-02-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device, semiconductor packaging method, assembly and method for fabricating the same |
| WO2007029329A1 (en) * | 2005-09-09 | 2007-03-15 | Fujitsu Limited | Solder alloy, and making use of the solder alloy, electronic substrate and process for producing the same |
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