JPS5939714A - Formation of silicon oxide coat - Google Patents
Formation of silicon oxide coatInfo
- Publication number
- JPS5939714A JPS5939714A JP57149997A JP14999782A JPS5939714A JP S5939714 A JPS5939714 A JP S5939714A JP 57149997 A JP57149997 A JP 57149997A JP 14999782 A JP14999782 A JP 14999782A JP S5939714 A JPS5939714 A JP S5939714A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- substrate
- silicon oxide
- silicon
- nco
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
Abstract
Description
【発明の詳細な説明】
本発明は珪素酸化物被覆形成法、特に常温付近の低温で
任意に有機基を増減出来る基体表面の珪素酸化物被覆形
成法である。DETAILED DESCRIPTION OF THE INVENTION The present invention is a method for forming a silicon oxide coating, particularly a method for forming a silicon oxide coating on the surface of a substrate, in which organic groups can be arbitrarily increased or decreased at a low temperature around room temperature.
電子部品用絶縁膜、プラスチックやガラスの表面安定化
、金属メッキ、薄膜表面の保護や積層板。Insulating films for electronic components, surface stabilization of plastics and glass, metal plating, thin film surface protection and laminates.
液晶セル面配向膜の表面処理等の目的で基板上に高純度
な珪素酸化物被覆を形成して使用する事は広(知られて
いる。It is widely known to form and use a highly pure silicon oxide coating on a substrate for the purpose of surface treatment of a liquid crystal cell surface alignment film, etc.
これらの被覆形成は5jO2のスパック、真空蒸着やシ
ランのCVD法或は基体が珪素の場合には熱酸化法での
処理が行われている。更に最近は取扱いが簡単で大面積
処理に適するものとしてゾル/ゲル法として分類される
溶液法が注目されて釆ている。この溶液法は他の方法の
如く特別な処理装置を用いる事なく安全に広表面の処理
が出来る利点があり、この為の処理剤としてはハロゲン
化シランやアルキルシリケートを加水分解するか又はア
ルコール−酸水溶液を加えて成る珪素化合物の結合基の
一部又は全てが加水分解されたゾル/ゲルを用いるもの
であり特公昭52−16488.%公開52−2082
5.特開昭55−34g76、特開昭57−74370
、特開昭57−105463、特開昭57−10094
0〜44にその鎖側が開示されている。These coatings are formed by spucking of 5jO2, vacuum evaporation, CVD of silane, or thermal oxidation when the substrate is silicon. Furthermore, recently, a solution method classified as a sol/gel method has been attracting attention because it is easy to handle and suitable for large area processing. This solution method has the advantage of being able to safely treat a wide surface area without using special treatment equipment like other methods, and the treatment agent used for this purpose is hydrolysis of halogenated silanes and alkyl silicates, or alcohol- This method uses a sol/gel in which some or all of the bonding groups of a silicon compound are hydrolyzed by adding an acid aqueous solution, and is disclosed in Japanese Patent Publication No. 52-16488. % public 52-2082
5. JP-A-55-34g76, JP-A-57-74370
, JP-A-57-105463, JP-A-57-10094
0-44, the chain side is disclosed.
しかしこれらのゾル/ゲル法の場合も被膜形成は通常2
00\600℃の高温で焼成処理しないと酸化物膜が形
成されないので作業の連続性に欠は適用材質にも制限が
生じる為室温又は連続処理が可能な低温域で珪素酸化物
被覆処理をする方法の開発が要請されていた。そこで室
温付近の低温で珪素酸化物被覆を形成する方法について
研死した結果分子中に5i−NGO結合を含むシランイ
ソシアネートで糸体を処理する方法が有効である事を認
め本発明に至った。However, even in these sol/gel methods, film formation usually takes 2
Since the oxide film will not be formed unless it is fired at a high temperature of 00\600℃, there will be a lack of continuity in the work and there will be restrictions on the applicable materials, so the silicon oxide coating treatment will be carried out at room temperature or at a low temperature range where continuous processing is possible. The development of a method was requested. Therefore, as a result of research on a method of forming a silicon oxide coating at a low temperature near room temperature, it was found that a method of treating the thread body with silane isocyanate containing a 5i-NGO bond in the molecule was effective, leading to the present invention.
かくて本発明は分子中にS l −Neo結合を■する
シランイソシアネート化合物で各種材質の基体表面を処
理することからなる珪素酸化物被慎形成法を提供するも
のである。Thus, the present invention provides a method for safely forming silicon oxide, which comprises treating the surface of a substrate made of various materials with a silane isocyanate compound having an S l -Neo bond in its molecule.
本発明では、かかるシランイソシアネート化合物とこの
化合物と反応してSi−0−M結合(Mは金属又は非金
属元素)を形成し得る多価金属化合物又はへテロ元素化
合物を併用して基体表面を処理することによって珪素酸
化物被覆を形成することもできる。本発明では主として
前記シランイソシアネート化合物として分子中にSt
に直結するNCO基を少くとも2個含有する化合物が
用いられる。In the present invention, such a silane isocyanate compound and a polyvalent metal compound or a hetero element compound capable of reacting with this compound to form an Si-0-M bond (M is a metal or a non-metal element) are used in combination to form a substrate surface. A silicon oxide coating can also be formed by processing. In the present invention, the silane isocyanate compound mainly contains St in the molecule.
A compound containing at least two NCO groups directly connected to is used.
本発明について更に詳細に説明すれば、ここで用いられ
るシランインシアネート化合物としては式5i(NCO
)4、RH8i (NCO)4−n、(RO)、Si
−(NCO)4−n(式中Rは置換基を封するか又は有
しない炭化水素基、n = l、2又は3)の化合物。To explain the present invention in more detail, the silane incyanate compound used herein is of formula 5i (NCO
)4, RH8i (NCO)4-n, (RO), Si
-(NCO)4-n (wherein R is a hydrocarbon group with or without a substituent, n = l, 2 or 3).
又はこれらの化合物の縮合物があげられる。又無水珪酸
やポリシロキサン化合物と上記式の化合物と縮合したS
i に直結したNCO基を2個以上含む化合物も同様
に本発明に用いることができる。このような珪素化合物
は単独でまたは2種以上混合して用いることができる。Or condensates of these compounds can be mentioned. Also, S condensed with silicic anhydride or polysiloxane compound and the compound of the above formula
Compounds containing two or more NCO groups directly linked to i can also be used in the present invention. Such silicon compounds can be used alone or in combination of two or more.
上記式中Rはメチル。In the above formula, R is methyl.
エチル、ビニル、フェニルその他の置換されない又は置
換された飽和又は不飽和の脂肪族又は芳香族の炭化水素
基であり希望する物性などに応じてこのような■機差を
任意に選択、増減してこれらを導入した珪素酸化物被覆
を形成jることができる。又上記式中n = l〜3の
化合物中止としてn = l〜2の化合物が本発明で用
いられるが、n = 3の化合物の場合は基体表面をア
ルキルシリル化処理する効果がある。Ethyl, vinyl, phenyl, and other unsubstituted or substituted saturated or unsaturated aliphatic or aromatic hydrocarbon groups, and such mechanical differences can be arbitrarily selected, increased or decreased depending on the desired physical properties, etc. A silicon oxide coating incorporating these can be formed. Further, in the above formula, a compound where n = 1 to 2 is used as a substitute for a compound where n = 1 to 3, but a compound where n = 3 has the effect of alkylsilylation treatment on the surface of the substrate.
これらの珪素化合物でプラスチック、ガラス、金属その
他の各種材質の基体表面を処理するに当っては、いわゆ
る流延法、スピンナー法、スプレー法、ノ9−コート法
、蒸−着法、 CVD法等各種の方法が用いられる。こ
れらの方法で基体表面を処理して前記珪素化合物を塗布
、積結なとするときは、上記のように分子中に5i−N
GO結合を何する化合物中のSt に直結したNCO基
は、特別な触媒を用いることなく空気中の水分や基体表
面の水分或はOH基等と容易に室温で反応してシロキサ
ン結合を形成するので、単にかかるシランイソシアネー
トを含む化合物で常態雰囲気下に連体表面を処理するだ
けで硬化して容易に基体表面に珪素酸化物被覆を形成す
ることができるのである。When treating the surface of plastic, glass, metal, and other various materials with these silicon compounds, so-called casting methods, spinner methods, spray methods, nine-coat methods, vapor deposition methods, CVD methods, etc. are used. Various methods are used. When applying and depositing the silicon compound by treating the surface of the substrate using these methods, 5i-N is added to the molecule as described above.
The NCO group directly connected to St in the compound that forms the GO bond easily reacts with moisture in the air, moisture on the surface of the substrate, or OH groups at room temperature to form a siloxane bond without using a special catalyst. Therefore, by simply treating the surface of the chain in a normal atmosphere with a compound containing such silane isocyanate, it is possible to cure and easily form a silicon oxide coating on the surface of the substrate.
このシランイソシアネート化合物は必要により他の化合
物を併用することができる。たとえばNCO基と反応す
る活性水素を何しない化合物を溶剤として併用すること
ができる。溶剤として用いることのできる化合物として
は例えばn−ヘキサン、ベンゼン、トルエン、キシレン
、塩化メチレン、トリクロルエチレン(トリクレン)、
フッ化炭化水素(フレオン)、ジメチルホルムアミド(
DMF)、ジメチ/l/ 、X /l/ホキシト(DM
SO)、ニトロベンゼン、酢酸メチル、酢酸エチル、酢
酸ジチル等を挙げることができる。This silane isocyanate compound can be used in combination with other compounds if necessary. For example, a compound that does not contain active hydrogen that reacts with NCO groups can be used in combination as a solvent. Examples of compounds that can be used as solvents include n-hexane, benzene, toluene, xylene, methylene chloride, trichloroethylene (triclene),
Fluorinated hydrocarbons (Freon), dimethylformamide (
DMF), dimethy/l/, X/l/phoxyto(DM
SO), nitrobenzene, methyl acetate, ethyl acetate, dithyl acetate, and the like.
又処理に際して密着性やアルカリ移行防止やその他の機
能を与えるために、処理時にシランイソシアネート化合
物中のSi と反応してSニーO−M結合(Mは下記
の如き金属又は非金属元素)を形成しうる多価金属化合
物又はペテロ元素化合物を併用することもできる。この
目的に使用することができる化合物としては上記Mとし
てMg、 Ca、Zn%B、 AI%Sn、 Ti、
Zr、 Sb、 In%V%Ta。In addition, in order to provide adhesion, prevent alkali migration, and other functions during treatment, it reacts with Si in the silane isocyanate compound to form an S-nee O-M bond (M is a metal or nonmetal element as shown below). A polyvalent metal compound or a petroelement compound that can be used may also be used in combination. Compounds that can be used for this purpose include Mg, Ca, Zn%B, AI%Sn, Ti,
Zr, Sb, In%V%Ta.
As、 P、 Fe、Co、 Ni、 Cr 等の金
属又は非金属元素を含む化合物があげられる。而してこ
れらの化合物はアルコキシド、キレート、アシレート、
水酸化物等積々の化合物で使用できるが、非水系でシラ
ンイソシアネート化合物又はこれと前記の如き溶剤とか
らなる溶液に溶解できるものでなければならない。Compounds containing metal or nonmetallic elements such as As, P, Fe, Co, Ni, and Cr can be mentioned. These compounds include alkoxides, chelates, acylates,
A variety of compounds such as hydroxides can be used, but they must be non-aqueous and soluble in a solution consisting of a silane isocyanate compound or the above-mentioned solvent.
本発明の方法は上述のように常態室温の雰囲気下で処理
して良好な珪素酸化物被覆が形成されるが必要により加
温して処理することもできること勿論でありこれによる
ときは被保の安定化を促進することができて好ましい。In the method of the present invention, as described above, a good silicon oxide coating is formed by processing in an atmosphere at normal room temperature, but it is of course possible to perform the processing under heating if necessary. This is preferable because it can promote stabilization.
か(して本発明の方法によれば室温又はその付近の低温
で湿気硬化法により基体の珪素酸化物被覆が形成できる
が、又春型する物性に応じて■機差を任意に導入した珪
素酸化物被覆が形成できるので工業上有用である。(Thus, according to the method of the present invention, a silicon oxide coating can be formed on the substrate by a moisture curing method at or near room temperature. It is industrially useful because it can form an oxide coating.
以下に本発明の実施例を示す。例中部はN置部を示す。Examples of the present invention are shown below. The middle part of the example shows the N position.
実施例1−6
硬質スライドガラスを洗剤及びアルコールで光分に洗浄
して試片とした。この試片を1Qcz/minの速度の
浸漬引上げ法で下記各例の化合物を処理し65%RH部
℃の雰囲気で硬化させ形成させた被覆の物性を測定した
。Example 1-6 A hard glass slide was optically cleaned with detergent and alcohol to prepare a specimen. This specimen was treated with the compounds of the following examples using a dipping/pulling method at a rate of 1 Qcz/min and cured in an atmosphere of 65% RH at ℃, and the physical properties of the formed coating were measured.
実施例 化 合 物 硬化時間 外 観I
5i(NCO)450 16分 無
色透明CH5i(NCO)350
2 CH2=CH81(NGO)350 1
7分 〃S + (NGO) 、+ 10
(CH3)2Si(NCO)240
3 (CH30)S+ (NGO)390
18分 〃(CH) 5t(NGO)210
2
4 (CH30)Si(NCO)380 1
0分 〃CM =CH8i(NGO)318
TAA−1002
5縮合物i11 30 10分 〃(C
H)Si(NGO)340
s・1(INco> 2、.27
B(OC2H5)33
6 縮合物+21*33(115分 〃5i(
NGO)415
(CH3)3Si(NCO)5
TAA−1003
酢酸エチル47
煮沸テスI−*4
セトナトチタネート
13時間
13時間 cH3G(3a(31
*45%食塩水で煮沸し外観上の
変化が現われる1での時間
20時間
爽施例7
液中ガス導入管と気化ガス導出管を設げた密閉ガラスフ
ラスコに5i(NGO)4を入れ充分に乾燥したN2
ガスを通しつつフラスコ温度を80″Cに昇温させた。Example Compound Curing time Appearance I
5i (NCO) 450 16 minutes Colorless transparent CH5i (NCO) 350 2 CH2=CH81 (NGO) 350 1
7 minutes 〃S + (NGO) , + 10 (CH3)2Si(NCO)240 3 (CH30)S+ (NGO)390
18 minutes 〃(CH) 5t(NGO)210 2 4 (CH30)Si(NCO)380 1
0 minutes 〃CM = CH8i (NGO) 318 TAA-1002 5 condensate i11 30 10 minutes 〃(C
H)Si(NGO)340 s・1(INco>2,.27 B(OC2H5)33 6 condensate +21*33(115 min 〃5i(
NGO) 415 (CH3)3Si(NCO)5 TAA-1003 Ethyl acetate 47 Boiling test I-*4 Cetonatotitanate 13 hours 13 hours cH3G(3a(31 *Changes in appearance appear after boiling in 45% saline solution1) Example 7 5i (NGO) was placed in a sealed glass flask equipped with a submerged gas inlet pipe and a vaporized gas outlet pipe, and thoroughly dried with N2.
The flask temperature was raised to 80''C while passing gas.
この状態で導出管から出るS i (NCO) 4気化
物を含むN2 ガスを各種基体表面に吹き付けて処理し
65%RH,25℃ の界囲気で硬化させた。In this state, N2 gas containing Si (NCO) 4 vapor discharged from the outlet tube was sprayed onto the surfaces of various substrates, and the substrates were cured in ambient air at 65% RH and 25°C.
得られた被覆は良好な物性を示した。The resulting coating showed good physical properties.
スライドガラス 無色透明 8分 15光沢
クロムメツ 〃〃18
キ面
銅 〃〃12
ポリエステルフ 〃 9分 10イル
ム
ポリ塩化ビニル 〃〃10
フィルム
災施例8
CH3S;、 (NCO) 310部、 5i(NCO
)490部の混合物をシリコン単結晶板に200Orp
mでスピンナー塗布して5℃65%RHで墓分間放置後
赤外線ランプで160℃に5分間加熱して均一膜を得た
。Slide glass Colorless transparent 8 minutes 15 Gloss chrome metal 〃 〃 18 Copper surface 〃 〃 12 Polyester film 〃 9 minutes 10 Illuminated polyvinyl chloride 〃 〃 10 Film disaster example 8 CH3S;, (NCO) 310 parts, 5i (NCO)
) 490 parts of the mixture was placed on a silicon single crystal plate at 200 or
After coating with a spinner at 5° C. and 65% RH for a few minutes, the film was heated to 160° C. for 5 minutes using an infrared lamp to obtain a uniform film.
Cの処理膜の表面抵抗10 Ω7ム であり煮沸テス
トは25時間であった。The surface resistance of the treated film C was 10 Ω 7 μm, and the boiling test was 25 hours.
Claims (1)
アネート化合物で基体表面を処理することからなる珪素
酸化物被覆形成法。 2、シランイソシアネート化合物が分子中にsiに直結
するNGO基を少(とも2個含有する化合物を含むもの
である特許請求の範囲第1項記載の方法。 3、分子中にB i −Neo結合を含むシランイソシ
アネート化合物と、この化合物と反応してSi−0−M
結合(Mは金属又は非金属元素)を形成し得る多価金属
化合物又はへテロ元素化合物を併用して溝体表面を処理
することからなる特許請求の範囲第1項記載の方法。[Claims] 1. A method for forming a silicon oxide coating, which comprises treating the surface of a substrate with a silane isocyanate compound containing an S i -NCO bond in the molecule. 2. The method according to claim 1, wherein the silane isocyanate compound contains a compound containing at least two NGO groups directly connected to Si in the molecule. 3. The method according to claim 1, wherein the silane isocyanate compound contains a compound containing at least two NGO groups directly bonded to Si. silane isocyanate compound, react with this compound to form Si-0-M
2. The method according to claim 1, which comprises treating the groove surface using a polyvalent metal compound or a hetero element compound capable of forming a bond (M is a metal or a non-metal element).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57149997A JPS5939714A (en) | 1982-08-31 | 1982-08-31 | Formation of silicon oxide coat |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57149997A JPS5939714A (en) | 1982-08-31 | 1982-08-31 | Formation of silicon oxide coat |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5939714A true JPS5939714A (en) | 1984-03-05 |
JPH0225990B2 JPH0225990B2 (en) | 1990-06-06 |
Family
ID=15487205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57149997A Granted JPS5939714A (en) | 1982-08-31 | 1982-08-31 | Formation of silicon oxide coat |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5939714A (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63247701A (en) * | 1987-04-02 | 1988-10-14 | Seiko Epson Corp | Surface reforming method for inorganic coating film |
JPH01306434A (en) * | 1988-06-03 | 1989-12-11 | Teijin Ltd | Mold releasing film and production thereof |
JPH05341106A (en) * | 1986-01-21 | 1993-12-24 | Seiko Epson Corp | Method for reforming surface of inorganic coat film |
JPH05341107A (en) * | 1986-01-21 | 1993-12-24 | Seiko Epson Corp | Optical material having inorganic coat film |
JPH05341108A (en) * | 1993-01-20 | 1993-12-24 | Seiko Epson Corp | Method for reforming surface of inorganic coat film |
JPH0682605A (en) * | 1993-04-08 | 1994-03-25 | Seiko Epson Corp | Optical article having inorganic coating film and its surface reforming method |
JPH0682603A (en) * | 1993-02-03 | 1994-03-25 | Seiko Epson Corp | Antireflective optical article and its surface reforming method |
JPH0688902A (en) * | 1993-02-03 | 1994-03-29 | Seiko Epson Corp | Optical article having inorganic coating film and modifying method for its surface |
US5622784A (en) * | 1986-01-21 | 1997-04-22 | Seiko Epson Corporation | Synthetic resin ophthalmic lens having an inorganic coating |
US5759643A (en) * | 1987-01-16 | 1998-06-02 | Seiko Epson Corporation | Polarizing plate and method of production |
US5783299A (en) * | 1986-01-21 | 1998-07-21 | Seiko Epson Corporation | Polarizer plate with anti-stain layer |
EP0891953A1 (en) * | 1997-07-15 | 1999-01-20 | Central Glass Company, Limited | Glass plate with water-repellent film and method for producing same |
JP2003257967A (en) * | 2002-03-05 | 2003-09-12 | Tri Chemical Laboratory Inc | Material for forming film, method of forming film, and device |
US6942924B2 (en) | 2001-10-31 | 2005-09-13 | Chemat Technology, Inc. | Radiation-curable anti-reflective coating system |
JP2007180544A (en) * | 2006-12-19 | 2007-07-12 | Tri Chemical Laboratory Inc | Film-forming material, film-forming method, and device |
-
1982
- 1982-08-31 JP JP57149997A patent/JPS5939714A/en active Granted
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5622784A (en) * | 1986-01-21 | 1997-04-22 | Seiko Epson Corporation | Synthetic resin ophthalmic lens having an inorganic coating |
US5783299A (en) * | 1986-01-21 | 1998-07-21 | Seiko Epson Corporation | Polarizer plate with anti-stain layer |
JPH05341106A (en) * | 1986-01-21 | 1993-12-24 | Seiko Epson Corp | Method for reforming surface of inorganic coat film |
JPH05341107A (en) * | 1986-01-21 | 1993-12-24 | Seiko Epson Corp | Optical material having inorganic coat film |
US5759643A (en) * | 1987-01-16 | 1998-06-02 | Seiko Epson Corporation | Polarizing plate and method of production |
JPS63247701A (en) * | 1987-04-02 | 1988-10-14 | Seiko Epson Corp | Surface reforming method for inorganic coating film |
JPH01306434A (en) * | 1988-06-03 | 1989-12-11 | Teijin Ltd | Mold releasing film and production thereof |
JPH05341108A (en) * | 1993-01-20 | 1993-12-24 | Seiko Epson Corp | Method for reforming surface of inorganic coat film |
JPH0682603A (en) * | 1993-02-03 | 1994-03-25 | Seiko Epson Corp | Antireflective optical article and its surface reforming method |
JPH0688902A (en) * | 1993-02-03 | 1994-03-29 | Seiko Epson Corp | Optical article having inorganic coating film and modifying method for its surface |
JPH0682605A (en) * | 1993-04-08 | 1994-03-25 | Seiko Epson Corp | Optical article having inorganic coating film and its surface reforming method |
EP0891953A1 (en) * | 1997-07-15 | 1999-01-20 | Central Glass Company, Limited | Glass plate with water-repellent film and method for producing same |
US6942924B2 (en) | 2001-10-31 | 2005-09-13 | Chemat Technology, Inc. | Radiation-curable anti-reflective coating system |
JP2003257967A (en) * | 2002-03-05 | 2003-09-12 | Tri Chemical Laboratory Inc | Material for forming film, method of forming film, and device |
JP2007180544A (en) * | 2006-12-19 | 2007-07-12 | Tri Chemical Laboratory Inc | Film-forming material, film-forming method, and device |
Also Published As
Publication number | Publication date |
---|---|
JPH0225990B2 (en) | 1990-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5939714A (en) | Formation of silicon oxide coat | |
JP4681094B2 (en) | Compositions having fluoroorganofunctional silanes and / or siloxanes, their preparation, their use and surface-modified supports | |
KR100289850B1 (en) | Method of coating substrate with silica precursor | |
JP6642309B2 (en) | Organosilicon compound and surface treatment composition | |
JPH02311332A (en) | Preparation of water-repellent glass | |
JP2000026610A (en) | Boron-and/or aluminum-containing mixture, composite material and coating | |
JPS58167597A (en) | Fluoroaminosilane | |
JPS5898367A (en) | Silicone film forming composition and production thereof | |
JPS62195061A (en) | Titanate/organosilane composition for primer and peeling agent | |
JPH05255507A (en) | Perhydrosiloxane copolymer and its use as coating material | |
JPH03157453A (en) | Silicone primer composition | |
JPS58172246A (en) | Surface treating agent for glass | |
EP0286387B1 (en) | Organosilicon compounds | |
JPH04226545A (en) | Organosiloxane compound polymer article and its preparation | |
JP7169933B2 (en) | Coating and manufacturing method thereof | |
WO2023181863A1 (en) | Compound, composition, surface treatment agent, article and method for producing article | |
JP2003253250A (en) | Surface-treating composition and surface-treating method | |
JPH10506144A (en) | Mixture for treating silicon-containing substrates | |
JPS62247302A (en) | Method for modifying surface of inorganic coat film | |
WO2020217902A1 (en) | Mixed composition | |
WO2020217905A1 (en) | Mixed composition | |
JPH0940910A (en) | Water repellent | |
JP3318350B2 (en) | Curable fluorosilicone resin composition | |
JPS62169102A (en) | Method for modifying surface of inorganic coating film | |
JP2752968B2 (en) | Method of forming silica-based coating |