JPS5939714A - Formation of silicon oxide coat - Google Patents

Formation of silicon oxide coat

Info

Publication number
JPS5939714A
JPS5939714A JP57149997A JP14999782A JPS5939714A JP S5939714 A JPS5939714 A JP S5939714A JP 57149997 A JP57149997 A JP 57149997A JP 14999782 A JP14999782 A JP 14999782A JP S5939714 A JPS5939714 A JP S5939714A
Authority
JP
Japan
Prior art keywords
compound
substrate
silicon oxide
silicon
nco
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57149997A
Other languages
Japanese (ja)
Other versions
JPH0225990B2 (en
Inventor
Iwakichi Sugiyama
杉山 岩吉
Seiji Endo
清司 遠藤
Yukihisa Takaoka
高岡 幸久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Matsumoto Seiyaku Kogyo KK
Original Assignee
Matsumoto Seiyaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsumoto Seiyaku Kogyo KK filed Critical Matsumoto Seiyaku Kogyo KK
Priority to JP57149997A priority Critical patent/JPS5939714A/en
Publication of JPS5939714A publication Critical patent/JPS5939714A/en
Publication of JPH0225990B2 publication Critical patent/JPH0225990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • C23C16/402Silicon dioxide

Abstract

PURPOSE:To form easily a favorable silicon oxide coat on the surface of a substrate at a low temp. close to room temp. while arbitrarily increasing or decreasing org. groups by treating the surface of the substrate with a silane isocyanate compound having Si-NCO bonds in the molecule. CONSTITUTION:A silane isocyanate compound having Si-NCO bonds in the molecule such as a compound represented by formula I or II (where R is optionally substituted hydrocarbon, and (n) is 1-3) or a condensation product of the compound is prepared. The surface of a substrate of plastics, glass, metal or the like is treated with the silicon compound by casting, spraying, vapor deposition or other method to form a silicon oxide coat on the surface of the substrate. The surface of the substrate may be treated with the silicon compound combined with a multivalent metallic compound or a heterocyclic compound capable of forming an Si-O-M bond (M is a metallic or nonmetallic element) by a reaction with the silicon compound.

Description

【発明の詳細な説明】 本発明は珪素酸化物被覆形成法、特に常温付近の低温で
任意に有機基を増減出来る基体表面の珪素酸化物被覆形
成法である。
DETAILED DESCRIPTION OF THE INVENTION The present invention is a method for forming a silicon oxide coating, particularly a method for forming a silicon oxide coating on the surface of a substrate, in which organic groups can be arbitrarily increased or decreased at a low temperature around room temperature.

電子部品用絶縁膜、プラスチックやガラスの表面安定化
、金属メッキ、薄膜表面の保護や積層板。
Insulating films for electronic components, surface stabilization of plastics and glass, metal plating, thin film surface protection and laminates.

液晶セル面配向膜の表面処理等の目的で基板上に高純度
な珪素酸化物被覆を形成して使用する事は広(知られて
いる。
It is widely known to form and use a highly pure silicon oxide coating on a substrate for the purpose of surface treatment of a liquid crystal cell surface alignment film, etc.

これらの被覆形成は5jO2のスパック、真空蒸着やシ
ランのCVD法或は基体が珪素の場合には熱酸化法での
処理が行われている。更に最近は取扱いが簡単で大面積
処理に適するものとしてゾル/ゲル法として分類される
溶液法が注目されて釆ている。この溶液法は他の方法の
如く特別な処理装置を用いる事なく安全に広表面の処理
が出来る利点があり、この為の処理剤としてはハロゲン
化シランやアルキルシリケートを加水分解するか又はア
ルコール−酸水溶液を加えて成る珪素化合物の結合基の
一部又は全てが加水分解されたゾル/ゲルを用いるもの
であり特公昭52−16488.%公開52−2082
5.特開昭55−34g76、特開昭57−74370
、特開昭57−105463、特開昭57−10094
0〜44にその鎖側が開示されている。
These coatings are formed by spucking of 5jO2, vacuum evaporation, CVD of silane, or thermal oxidation when the substrate is silicon. Furthermore, recently, a solution method classified as a sol/gel method has been attracting attention because it is easy to handle and suitable for large area processing. This solution method has the advantage of being able to safely treat a wide surface area without using special treatment equipment like other methods, and the treatment agent used for this purpose is hydrolysis of halogenated silanes and alkyl silicates, or alcohol- This method uses a sol/gel in which some or all of the bonding groups of a silicon compound are hydrolyzed by adding an acid aqueous solution, and is disclosed in Japanese Patent Publication No. 52-16488. % public 52-2082
5. JP-A-55-34g76, JP-A-57-74370
, JP-A-57-105463, JP-A-57-10094
0-44, the chain side is disclosed.

しかしこれらのゾル/ゲル法の場合も被膜形成は通常2
00\600℃の高温で焼成処理しないと酸化物膜が形
成されないので作業の連続性に欠は適用材質にも制限が
生じる為室温又は連続処理が可能な低温域で珪素酸化物
被覆処理をする方法の開発が要請されていた。そこで室
温付近の低温で珪素酸化物被覆を形成する方法について
研死した結果分子中に5i−NGO結合を含むシランイ
ソシアネートで糸体を処理する方法が有効である事を認
め本発明に至った。
However, even in these sol/gel methods, film formation usually takes 2
Since the oxide film will not be formed unless it is fired at a high temperature of 00\600℃, there will be a lack of continuity in the work and there will be restrictions on the applicable materials, so the silicon oxide coating treatment will be carried out at room temperature or at a low temperature range where continuous processing is possible. The development of a method was requested. Therefore, as a result of research on a method of forming a silicon oxide coating at a low temperature near room temperature, it was found that a method of treating the thread body with silane isocyanate containing a 5i-NGO bond in the molecule was effective, leading to the present invention.

かくて本発明は分子中にS l −Neo結合を■する
シランイソシアネート化合物で各種材質の基体表面を処
理することからなる珪素酸化物被慎形成法を提供するも
のである。
Thus, the present invention provides a method for safely forming silicon oxide, which comprises treating the surface of a substrate made of various materials with a silane isocyanate compound having an S l -Neo bond in its molecule.

本発明では、かかるシランイソシアネート化合物とこの
化合物と反応してSi−0−M結合(Mは金属又は非金
属元素)を形成し得る多価金属化合物又はへテロ元素化
合物を併用して基体表面を処理することによって珪素酸
化物被覆を形成することもできる。本発明では主として
前記シランイソシアネート化合物として分子中にSt 
 に直結するNCO基を少くとも2個含有する化合物が
用いられる。
In the present invention, such a silane isocyanate compound and a polyvalent metal compound or a hetero element compound capable of reacting with this compound to form an Si-0-M bond (M is a metal or a non-metal element) are used in combination to form a substrate surface. A silicon oxide coating can also be formed by processing. In the present invention, the silane isocyanate compound mainly contains St in the molecule.
A compound containing at least two NCO groups directly connected to is used.

本発明について更に詳細に説明すれば、ここで用いられ
るシランインシアネート化合物としては式5i(NCO
)4、RH8i (NCO)4−n、(RO)、Si 
−(NCO)4−n(式中Rは置換基を封するか又は有
しない炭化水素基、n = l、2又は3)の化合物。
To explain the present invention in more detail, the silane incyanate compound used herein is of formula 5i (NCO
)4, RH8i (NCO)4-n, (RO), Si
-(NCO)4-n (wherein R is a hydrocarbon group with or without a substituent, n = l, 2 or 3).

又はこれらの化合物の縮合物があげられる。又無水珪酸
やポリシロキサン化合物と上記式の化合物と縮合したS
i  に直結したNCO基を2個以上含む化合物も同様
に本発明に用いることができる。このような珪素化合物
は単独でまたは2種以上混合して用いることができる。
Or condensates of these compounds can be mentioned. Also, S condensed with silicic anhydride or polysiloxane compound and the compound of the above formula
Compounds containing two or more NCO groups directly linked to i can also be used in the present invention. Such silicon compounds can be used alone or in combination of two or more.

上記式中Rはメチル。In the above formula, R is methyl.

エチル、ビニル、フェニルその他の置換されない又は置
換された飽和又は不飽和の脂肪族又は芳香族の炭化水素
基であり希望する物性などに応じてこのような■機差を
任意に選択、増減してこれらを導入した珪素酸化物被覆
を形成jることができる。又上記式中n = l〜3の
化合物中止としてn = l〜2の化合物が本発明で用
いられるが、n = 3の化合物の場合は基体表面をア
ルキルシリル化処理する効果がある。
Ethyl, vinyl, phenyl, and other unsubstituted or substituted saturated or unsaturated aliphatic or aromatic hydrocarbon groups, and such mechanical differences can be arbitrarily selected, increased or decreased depending on the desired physical properties, etc. A silicon oxide coating incorporating these can be formed. Further, in the above formula, a compound where n = 1 to 2 is used as a substitute for a compound where n = 1 to 3, but a compound where n = 3 has the effect of alkylsilylation treatment on the surface of the substrate.

これらの珪素化合物でプラスチック、ガラス、金属その
他の各種材質の基体表面を処理するに当っては、いわゆ
る流延法、スピンナー法、スプレー法、ノ9−コート法
、蒸−着法、 CVD法等各種の方法が用いられる。こ
れらの方法で基体表面を処理して前記珪素化合物を塗布
、積結なとするときは、上記のように分子中に5i−N
GO結合を何する化合物中のSt に直結したNCO基
は、特別な触媒を用いることなく空気中の水分や基体表
面の水分或はOH基等と容易に室温で反応してシロキサ
ン結合を形成するので、単にかかるシランイソシアネー
トを含む化合物で常態雰囲気下に連体表面を処理するだ
けで硬化して容易に基体表面に珪素酸化物被覆を形成す
ることができるのである。
When treating the surface of plastic, glass, metal, and other various materials with these silicon compounds, so-called casting methods, spinner methods, spray methods, nine-coat methods, vapor deposition methods, CVD methods, etc. are used. Various methods are used. When applying and depositing the silicon compound by treating the surface of the substrate using these methods, 5i-N is added to the molecule as described above.
The NCO group directly connected to St in the compound that forms the GO bond easily reacts with moisture in the air, moisture on the surface of the substrate, or OH groups at room temperature to form a siloxane bond without using a special catalyst. Therefore, by simply treating the surface of the chain in a normal atmosphere with a compound containing such silane isocyanate, it is possible to cure and easily form a silicon oxide coating on the surface of the substrate.

このシランイソシアネート化合物は必要により他の化合
物を併用することができる。たとえばNCO基と反応す
る活性水素を何しない化合物を溶剤として併用すること
ができる。溶剤として用いることのできる化合物として
は例えばn−ヘキサン、ベンゼン、トルエン、キシレン
、塩化メチレン、トリクロルエチレン(トリクレン)、
フッ化炭化水素(フレオン)、ジメチルホルムアミド(
DMF)、ジメチ/l/ 、X /l/ホキシト(DM
SO)、ニトロベンゼン、酢酸メチル、酢酸エチル、酢
酸ジチル等を挙げることができる。
This silane isocyanate compound can be used in combination with other compounds if necessary. For example, a compound that does not contain active hydrogen that reacts with NCO groups can be used in combination as a solvent. Examples of compounds that can be used as solvents include n-hexane, benzene, toluene, xylene, methylene chloride, trichloroethylene (triclene),
Fluorinated hydrocarbons (Freon), dimethylformamide (
DMF), dimethy/l/, X/l/phoxyto(DM
SO), nitrobenzene, methyl acetate, ethyl acetate, dithyl acetate, and the like.

又処理に際して密着性やアルカリ移行防止やその他の機
能を与えるために、処理時にシランイソシアネート化合
物中のSi  と反応してSニーO−M結合(Mは下記
の如き金属又は非金属元素)を形成しうる多価金属化合
物又はペテロ元素化合物を併用することもできる。この
目的に使用することができる化合物としては上記Mとし
てMg、 Ca、Zn%B、 AI%Sn、 Ti、 
Zr、 Sb、 In%V%Ta。
In addition, in order to provide adhesion, prevent alkali migration, and other functions during treatment, it reacts with Si in the silane isocyanate compound to form an S-nee O-M bond (M is a metal or nonmetal element as shown below). A polyvalent metal compound or a petroelement compound that can be used may also be used in combination. Compounds that can be used for this purpose include Mg, Ca, Zn%B, AI%Sn, Ti,
Zr, Sb, In%V%Ta.

As、 P、 Fe、Co、 Ni、 Cr  等の金
属又は非金属元素を含む化合物があげられる。而してこ
れらの化合物はアルコキシド、キレート、アシレート、
水酸化物等積々の化合物で使用できるが、非水系でシラ
ンイソシアネート化合物又はこれと前記の如き溶剤とか
らなる溶液に溶解できるものでなければならない。
Compounds containing metal or nonmetallic elements such as As, P, Fe, Co, Ni, and Cr can be mentioned. These compounds include alkoxides, chelates, acylates,
A variety of compounds such as hydroxides can be used, but they must be non-aqueous and soluble in a solution consisting of a silane isocyanate compound or the above-mentioned solvent.

本発明の方法は上述のように常態室温の雰囲気下で処理
して良好な珪素酸化物被覆が形成されるが必要により加
温して処理することもできること勿論でありこれによる
ときは被保の安定化を促進することができて好ましい。
In the method of the present invention, as described above, a good silicon oxide coating is formed by processing in an atmosphere at normal room temperature, but it is of course possible to perform the processing under heating if necessary. This is preferable because it can promote stabilization.

か(して本発明の方法によれば室温又はその付近の低温
で湿気硬化法により基体の珪素酸化物被覆が形成できる
が、又春型する物性に応じて■機差を任意に導入した珪
素酸化物被覆が形成できるので工業上有用である。
(Thus, according to the method of the present invention, a silicon oxide coating can be formed on the substrate by a moisture curing method at or near room temperature. It is industrially useful because it can form an oxide coating.

以下に本発明の実施例を示す。例中部はN置部を示す。Examples of the present invention are shown below. The middle part of the example shows the N position.

実施例1−6 硬質スライドガラスを洗剤及びアルコールで光分に洗浄
して試片とした。この試片を1Qcz/minの速度の
浸漬引上げ法で下記各例の化合物を処理し65%RH部
℃の雰囲気で硬化させ形成させた被覆の物性を測定した
Example 1-6 A hard glass slide was optically cleaned with detergent and alcohol to prepare a specimen. This specimen was treated with the compounds of the following examples using a dipping/pulling method at a rate of 1 Qcz/min and cured in an atmosphere of 65% RH at ℃, and the physical properties of the formed coating were measured.

実施例   化 合 物   硬化時間 外 観I  
  5i(NCO)450       16分  無
色透明CH5i(NCO)350 2    CH2=CH81(NGO)350   1
7分    〃S + (NGO) 、+ 10 (CH3)2Si(NCO)240 3    (CH30)S+ (NGO)390   
18分    〃(CH) 5t(NGO)210 2 4    (CH30)Si(NCO)380   1
0分    〃CM =CH8i(NGO)318 TAA−1002 5縮合物i11  30    10分    〃(C
H)Si(NGO)340 s・1(INco> 2、.27 B(OC2H5)33 6  縮合物+21*33(115分    〃5i(
NGO)415 (CH3)3Si(NCO)5 TAA−1003 酢酸エチル47 煮沸テスI−*4 セトナトチタネート 13時間 13時間          cH3G(3a(31 *45%食塩水で煮沸し外観上の 変化が現われる1での時間 20時間 爽施例7 液中ガス導入管と気化ガス導出管を設げた密閉ガラスフ
ラスコに5i(NGO)4を入れ充分に乾燥したN2 
ガスを通しつつフラスコ温度を80″Cに昇温させた。
Example Compound Curing time Appearance I
5i (NCO) 450 16 minutes Colorless transparent CH5i (NCO) 350 2 CH2=CH81 (NGO) 350 1
7 minutes 〃S + (NGO) , + 10 (CH3)2Si(NCO)240 3 (CH30)S+ (NGO)390
18 minutes 〃(CH) 5t(NGO)210 2 4 (CH30)Si(NCO)380 1
0 minutes 〃CM = CH8i (NGO) 318 TAA-1002 5 condensate i11 30 10 minutes 〃(C
H)Si(NGO)340 s・1(INco>2,.27 B(OC2H5)33 6 condensate +21*33(115 min 〃5i(
NGO) 415 (CH3)3Si(NCO)5 TAA-1003 Ethyl acetate 47 Boiling test I-*4 Cetonatotitanate 13 hours 13 hours cH3G(3a(31 *Changes in appearance appear after boiling in 45% saline solution1) Example 7 5i (NGO) was placed in a sealed glass flask equipped with a submerged gas inlet pipe and a vaporized gas outlet pipe, and thoroughly dried with N2.
The flask temperature was raised to 80''C while passing gas.

この状態で導出管から出るS i (NCO) 4気化
物を含むN2 ガスを各種基体表面に吹き付けて処理し
65%RH,25℃ の界囲気で硬化させた。
In this state, N2 gas containing Si (NCO) 4 vapor discharged from the outlet tube was sprayed onto the surfaces of various substrates, and the substrates were cured in ambient air at 65% RH and 25°C.

得られた被覆は良好な物性を示した。The resulting coating showed good physical properties.

スライドガラス 無色透明   8分    15光沢
クロムメツ   〃〃18 キ面 銅          〃〃12 ポリエステルフ   〃    9分    10イル
ム ポリ塩化ビニル   〃〃10 フィルム 災施例8 CH3S;、 (NCO) 310部、 5i(NCO
)490部の混合物をシリコン単結晶板に200Orp
mでスピンナー塗布して5℃65%RHで墓分間放置後
赤外線ランプで160℃に5分間加熱して均一膜を得た
Slide glass Colorless transparent 8 minutes 15 Gloss chrome metal 〃 〃 18 Copper surface 〃 〃 12 Polyester film 〃 9 minutes 10 Illuminated polyvinyl chloride 〃 〃 10 Film disaster example 8 CH3S;, (NCO) 310 parts, 5i (NCO)
) 490 parts of the mixture was placed on a silicon single crystal plate at 200 or
After coating with a spinner at 5° C. and 65% RH for a few minutes, the film was heated to 160° C. for 5 minutes using an infrared lamp to obtain a uniform film.

Cの処理膜の表面抵抗10  Ω7ム であり煮沸テス
トは25時間であった。
The surface resistance of the treated film C was 10 Ω 7 μm, and the boiling test was 25 hours.

Claims (1)

【特許請求の範囲】 1、分子中にS i −NCO結合を含むシランイソシ
アネート化合物で基体表面を処理することからなる珪素
酸化物被覆形成法。 2、シランイソシアネート化合物が分子中にsiに直結
するNGO基を少(とも2個含有する化合物を含むもの
である特許請求の範囲第1項記載の方法。 3、分子中にB i −Neo結合を含むシランイソシ
アネート化合物と、この化合物と反応してSi−0−M
結合(Mは金属又は非金属元素)を形成し得る多価金属
化合物又はへテロ元素化合物を併用して溝体表面を処理
することからなる特許請求の範囲第1項記載の方法。
[Claims] 1. A method for forming a silicon oxide coating, which comprises treating the surface of a substrate with a silane isocyanate compound containing an S i -NCO bond in the molecule. 2. The method according to claim 1, wherein the silane isocyanate compound contains a compound containing at least two NGO groups directly connected to Si in the molecule. 3. The method according to claim 1, wherein the silane isocyanate compound contains a compound containing at least two NGO groups directly bonded to Si. silane isocyanate compound, react with this compound to form Si-0-M
2. The method according to claim 1, which comprises treating the groove surface using a polyvalent metal compound or a hetero element compound capable of forming a bond (M is a metal or a non-metal element).
JP57149997A 1982-08-31 1982-08-31 Formation of silicon oxide coat Granted JPS5939714A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57149997A JPS5939714A (en) 1982-08-31 1982-08-31 Formation of silicon oxide coat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57149997A JPS5939714A (en) 1982-08-31 1982-08-31 Formation of silicon oxide coat

Publications (2)

Publication Number Publication Date
JPS5939714A true JPS5939714A (en) 1984-03-05
JPH0225990B2 JPH0225990B2 (en) 1990-06-06

Family

ID=15487205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57149997A Granted JPS5939714A (en) 1982-08-31 1982-08-31 Formation of silicon oxide coat

Country Status (1)

Country Link
JP (1) JPS5939714A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63247701A (en) * 1987-04-02 1988-10-14 Seiko Epson Corp Surface reforming method for inorganic coating film
JPH01306434A (en) * 1988-06-03 1989-12-11 Teijin Ltd Mold releasing film and production thereof
JPH05341106A (en) * 1986-01-21 1993-12-24 Seiko Epson Corp Method for reforming surface of inorganic coat film
JPH05341107A (en) * 1986-01-21 1993-12-24 Seiko Epson Corp Optical material having inorganic coat film
JPH05341108A (en) * 1993-01-20 1993-12-24 Seiko Epson Corp Method for reforming surface of inorganic coat film
JPH0682605A (en) * 1993-04-08 1994-03-25 Seiko Epson Corp Optical article having inorganic coating film and its surface reforming method
JPH0682603A (en) * 1993-02-03 1994-03-25 Seiko Epson Corp Antireflective optical article and its surface reforming method
JPH0688902A (en) * 1993-02-03 1994-03-29 Seiko Epson Corp Optical article having inorganic coating film and modifying method for its surface
US5622784A (en) * 1986-01-21 1997-04-22 Seiko Epson Corporation Synthetic resin ophthalmic lens having an inorganic coating
US5759643A (en) * 1987-01-16 1998-06-02 Seiko Epson Corporation Polarizing plate and method of production
US5783299A (en) * 1986-01-21 1998-07-21 Seiko Epson Corporation Polarizer plate with anti-stain layer
EP0891953A1 (en) * 1997-07-15 1999-01-20 Central Glass Company, Limited Glass plate with water-repellent film and method for producing same
JP2003257967A (en) * 2002-03-05 2003-09-12 Tri Chemical Laboratory Inc Material for forming film, method of forming film, and device
US6942924B2 (en) 2001-10-31 2005-09-13 Chemat Technology, Inc. Radiation-curable anti-reflective coating system
JP2007180544A (en) * 2006-12-19 2007-07-12 Tri Chemical Laboratory Inc Film-forming material, film-forming method, and device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622784A (en) * 1986-01-21 1997-04-22 Seiko Epson Corporation Synthetic resin ophthalmic lens having an inorganic coating
US5783299A (en) * 1986-01-21 1998-07-21 Seiko Epson Corporation Polarizer plate with anti-stain layer
JPH05341106A (en) * 1986-01-21 1993-12-24 Seiko Epson Corp Method for reforming surface of inorganic coat film
JPH05341107A (en) * 1986-01-21 1993-12-24 Seiko Epson Corp Optical material having inorganic coat film
US5759643A (en) * 1987-01-16 1998-06-02 Seiko Epson Corporation Polarizing plate and method of production
JPS63247701A (en) * 1987-04-02 1988-10-14 Seiko Epson Corp Surface reforming method for inorganic coating film
JPH01306434A (en) * 1988-06-03 1989-12-11 Teijin Ltd Mold releasing film and production thereof
JPH05341108A (en) * 1993-01-20 1993-12-24 Seiko Epson Corp Method for reforming surface of inorganic coat film
JPH0682603A (en) * 1993-02-03 1994-03-25 Seiko Epson Corp Antireflective optical article and its surface reforming method
JPH0688902A (en) * 1993-02-03 1994-03-29 Seiko Epson Corp Optical article having inorganic coating film and modifying method for its surface
JPH0682605A (en) * 1993-04-08 1994-03-25 Seiko Epson Corp Optical article having inorganic coating film and its surface reforming method
EP0891953A1 (en) * 1997-07-15 1999-01-20 Central Glass Company, Limited Glass plate with water-repellent film and method for producing same
US6942924B2 (en) 2001-10-31 2005-09-13 Chemat Technology, Inc. Radiation-curable anti-reflective coating system
JP2003257967A (en) * 2002-03-05 2003-09-12 Tri Chemical Laboratory Inc Material for forming film, method of forming film, and device
JP2007180544A (en) * 2006-12-19 2007-07-12 Tri Chemical Laboratory Inc Film-forming material, film-forming method, and device

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