JPS5925229A - 半導体基板の加熱方法 - Google Patents

半導体基板の加熱方法

Info

Publication number
JPS5925229A
JPS5925229A JP13415982A JP13415982A JPS5925229A JP S5925229 A JPS5925229 A JP S5925229A JP 13415982 A JP13415982 A JP 13415982A JP 13415982 A JP13415982 A JP 13415982A JP S5925229 A JPS5925229 A JP S5925229A
Authority
JP
Japan
Prior art keywords
wafer
heat treatment
heating
vacuum
microwaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13415982A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376021B2 (cs
Inventor
Minoru Inoue
実 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13415982A priority Critical patent/JPS5925229A/ja
Publication of JPS5925229A publication Critical patent/JPS5925229A/ja
Publication of JPH0376021B2 publication Critical patent/JPH0376021B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Constitution Of High-Frequency Heating (AREA)
JP13415982A 1982-07-30 1982-07-30 半導体基板の加熱方法 Granted JPS5925229A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13415982A JPS5925229A (ja) 1982-07-30 1982-07-30 半導体基板の加熱方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13415982A JPS5925229A (ja) 1982-07-30 1982-07-30 半導体基板の加熱方法

Publications (2)

Publication Number Publication Date
JPS5925229A true JPS5925229A (ja) 1984-02-09
JPH0376021B2 JPH0376021B2 (cs) 1991-12-04

Family

ID=15121836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13415982A Granted JPS5925229A (ja) 1982-07-30 1982-07-30 半導体基板の加熱方法

Country Status (1)

Country Link
JP (1) JPS5925229A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127532A (ja) * 1990-09-19 1992-04-28 Nec Yamagata Ltd 半導体ウェーハ熱処理方法
JP2011134836A (ja) * 2009-12-24 2011-07-07 Toshiba Corp 裏面照射型撮像素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178316A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Manufacture of semiconductor element and device therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178316A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Manufacture of semiconductor element and device therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04127532A (ja) * 1990-09-19 1992-04-28 Nec Yamagata Ltd 半導体ウェーハ熱処理方法
JP2011134836A (ja) * 2009-12-24 2011-07-07 Toshiba Corp 裏面照射型撮像素子の製造方法

Also Published As

Publication number Publication date
JPH0376021B2 (cs) 1991-12-04

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