JPS59210639A - 反応性気体が充填された高圧容器 - Google Patents

反応性気体が充填された高圧容器

Info

Publication number
JPS59210639A
JPS59210639A JP59005432A JP543284A JPS59210639A JP S59210639 A JPS59210639 A JP S59210639A JP 59005432 A JP59005432 A JP 59005432A JP 543284 A JP543284 A JP 543284A JP S59210639 A JPS59210639 A JP S59210639A
Authority
JP
Japan
Prior art keywords
silane
cylinder
amorphous
semi
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59005432A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0324775B2 (https=
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59005432A priority Critical patent/JPS59210639A/ja
Publication of JPS59210639A publication Critical patent/JPS59210639A/ja
Publication of JPH0324775B2 publication Critical patent/JPH0324775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
JP59005432A 1984-01-16 1984-01-16 反応性気体が充填された高圧容器 Granted JPS59210639A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59005432A JPS59210639A (ja) 1984-01-16 1984-01-16 反応性気体が充填された高圧容器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59005432A JPS59210639A (ja) 1984-01-16 1984-01-16 反応性気体が充填された高圧容器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55129641A Division JPS6024180B2 (ja) 1980-09-18 1980-09-18 被膜作製方法

Publications (2)

Publication Number Publication Date
JPS59210639A true JPS59210639A (ja) 1984-11-29
JPH0324775B2 JPH0324775B2 (https=) 1991-04-04

Family

ID=11611026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59005432A Granted JPS59210639A (ja) 1984-01-16 1984-01-16 反応性気体が充填された高圧容器

Country Status (1)

Country Link
JP (1) JPS59210639A (https=)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PHILOS MAG *

Also Published As

Publication number Publication date
JPH0324775B2 (https=) 1991-04-04

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