JPS59205739A - Semiconductor device and method of producing same - Google Patents

Semiconductor device and method of producing same

Info

Publication number
JPS59205739A
JPS59205739A JP59024197A JP2419784A JPS59205739A JP S59205739 A JPS59205739 A JP S59205739A JP 59024197 A JP59024197 A JP 59024197A JP 2419784 A JP2419784 A JP 2419784A JP S59205739 A JPS59205739 A JP S59205739A
Authority
JP
Japan
Prior art keywords
semiconductor
producing same
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59024197A
Other languages
Japanese (ja)
Other versions
JPH0666313B2 (en
Inventor
Uein Fuitsushiya Arubaato
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US46564083A priority Critical
Priority to US465640 priority
Application filed by Rca Corp filed Critical Rca Corp
Publication of JPS59205739A publication Critical patent/JPS59205739A/en
Publication of JPH0666313B2 publication Critical patent/JPH0666313B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/60
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
JP59024197A 1983-02-10 1984-02-09 Semiconductor device manufacturing method Expired - Lifetime JPH0666313B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US46564083A true 1983-02-10 1983-02-10
US465640 1983-02-10

Publications (2)

Publication Number Publication Date
JPS59205739A true JPS59205739A (en) 1984-11-21
JPH0666313B2 JPH0666313B2 (en) 1994-08-24

Family

ID=23848579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59024197A Expired - Lifetime JPH0666313B2 (en) 1983-02-10 1984-02-09 Semiconductor device manufacturing method

Country Status (7)

Country Link
JP (1) JPH0666313B2 (en)
KR (1) KR910008104B1 (en)
CA (1) CA1209281A (en)
GB (1) GB2135123B (en)
IT (1) IT1213136B (en)
SE (1) SE501466C2 (en)
YU (1) YU18284A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763064B2 (en) * 1986-03-31 1995-07-05 株式会社日立製作所 Wiring connection method for IC element
JPH0719841B2 (en) * 1987-10-02 1995-03-06 株式会社東芝 Semiconductor device
USRE36475E (en) * 1993-09-15 1999-12-28 Hyundai Electronics Industries Co., Ltd. Method of forming a via plug in a semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112292A (en) * 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156365A (en) * 1979-05-24 1980-12-05 Toshiba Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112292A (en) * 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
SE8400592L (en) 1984-08-11
SE8400592D0 (en) 1984-02-06
CA1209281A1 (en)
GB2135123A (en) 1984-08-22
YU18284A (en) 1987-12-31
IT1213136B (en) 1989-12-14
KR910008104B1 (en) 1991-10-07
CA1209281A (en) 1986-08-05
KR840008215A (en) 1984-12-13
JPH0666313B2 (en) 1994-08-24
IT8419546D0 (en) 1984-02-09
GB2135123B (en) 1987-05-20
GB8402109D0 (en) 1984-02-29
SE501466C2 (en) 1995-02-20

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