JPS59194733A - Semiconductive laser blood vessel inosculating apparatus - Google Patents
Semiconductive laser blood vessel inosculating apparatusInfo
- Publication number
- JPS59194733A JPS59194733A JP58068429A JP6842983A JPS59194733A JP S59194733 A JPS59194733 A JP S59194733A JP 58068429 A JP58068429 A JP 58068429A JP 6842983 A JP6842983 A JP 6842983A JP S59194733 A JPS59194733 A JP S59194733A
- Authority
- JP
- Japan
- Prior art keywords
- blood vessel
- laser
- semiconductor laser
- inosculating
- anastomosis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
(技術分野)
本発明は、半導体レーザを用いた血管吻合装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a blood vessel anastomosis device using a semiconductor laser.
(従来技術)
針と糸を用いて行なう血管吻合は、脳外科や心臓外柵、
整形外科等で広く採用されているが、一本の血管の周囲
を士数針縫う必要があることから、術者及び患者に大き
な負担や苦痛を強いることが多かった。殊に、l+++
mφ以下の細管の吻合においては、満足のいく結果の得
られる成功率が極めて低くなること沌やむを得ないこと
であった。針と糸を用いた動脈血管の吻合の場合、吻合
後に血流を再開させると接合部においてすき間から血液
が漏出し、この漏出が収まる寸でしばらくガーゼ等を押
し当てておくというような余分な時間が必要であった。(Prior art) Vascular anastomosis performed using a needle and thread is used in neurosurgery, cardiac surgery,
Although this method is widely used in orthopedic surgery, it requires several stitches around a single blood vessel, which often places a large burden and pain on the surgeon and patient. In particular, l+++
In anastomoses of tubules with a diameter of less than mφ, it is unavoidable that the success rate of obtaining a satisfactory result is extremely low. In the case of arterial blood vessel anastomosis using a needle and thread, when blood flow is resumed after the anastomosis, blood leaks from the gap at the junction, and extra measures such as pressing gauze etc. for a while until the leakage subsides is necessary. Time was needed.
また、脳外科等においては、吻合時間が長くかかると血
流を止めておく時間も長くなシ、このだめの二次的障害
が起こるという危険性もあったO
これに対し、最近、YAGレーザ又は炭酸1fスレーザ
を用いた血管吻合術が開発されている。このような光エ
ネルギーを用いた血管吻合術は光エネルギーを熱に変換
して利用するものである。YAGレーザの場合、かなシ
大きな出力、例えば最大10W程度まで用いた例が報告
されているが、光エネルギーを熱エネルギーに変換して
用いる場合、全エネルギー楡よりもむしろ照射部位にお
けるエネルギー密度が問題となる。炭酸ガスレーザの場
合、わずか数十mWの程度で血管吻合が行なわれ、エネ
ルギー密度としては3〜5 J/rrrrn2というの
が実用的な値である。第1図は、炭酸がスレーザを用い
たときの血管吻合条件を示したものである。In addition, in neurosurgery, etc., the longer the anastomosis time, the longer the time to stop the blood flow, and there was a risk of secondary damage occurring.In contrast, recently, YAG laser or A vascular anastomosis technique using a 1f carbonate laser has been developed. Such vascular anastomosis using light energy utilizes light energy by converting it into heat. In the case of YAG lasers, there have been reports of using a very large output, for example up to about 10 W, but when converting optical energy into thermal energy, the problem lies in the energy density at the irradiated area rather than the total energy beam. becomes. In the case of a carbon dioxide laser, blood vessel anastomosis is performed with only a few tens of mW, and a practical value for the energy density is 3 to 5 J/rrrrn2. FIG. 1 shows the conditions for vascular anastomosis when a carbonic acid laser is used.
ス、45 ノド径0.1 +nriφにおける吻合可能
域で、15〜35mWのl(=出力に肝I当する。45 In the anastomosis possible range with a throat diameter of 0.1 +nriφ, 15 to 35 mW (=equal to the output power).
ところで、YAGレーザ光の場合、光の波長(]、00
6μmが炭酸がスレーザ光のそれに比べて1/10″′
Cあるので、本質的に光の収束性はよく、このだめ炭酸
ガスレーザと同一エネルギー密度をイ、[%るのにより
小さん光出力で吻合条件を満たすことができる。つ捷り
数百mJ程度の光エネルギーを出力てきれば血管吻合に
供することができる。しかし、このような微小なレーザ
を安定して出力するには現時点て困難である。By the way, in the case of YAG laser light, the wavelength of light (], 00
6μm carbonic acid is 1/10'' compared to that of laser beam
Because of the C laser, the light convergence is essentially good, and since it has the same energy density as a carbon dioxide laser, it is possible to satisfy the anastomosis conditions with a small optical output. If it can output optical energy of about several hundred mJ at a time, it can be used for blood vessel anastomosis. However, it is currently difficult to stably output such a small laser.
一方、生体細緻における光の吸収率では、炭酸ガスレー
ザゲCばYAGレーザ光に比較して1000倍も大きく
、このことから光の浸透距離が浅いので血%の表面のみ
を接合するには都合が良い。又、このことは3〜5 J
/in2のエネルギー密度で十分血管吻合ができるゆ
えんである。On the other hand, the absorption rate of light in biological tissue is 1000 times higher than that of carbon dioxide laser (CBA/YAG laser), which means that the penetration distance of light is shallow, making it convenient for bonding only the surface of blood. . Also, this means that 3 to 5 J
This is because an energy density of /in2 is enough to perform blood vessel anastomosis.
以上のように、YAGレーザ、炭酸ガスレーザ共にそれ
ぞれ長所、欠点を有するが、YAGレーザの場合、比較
的大きい光出力を用いて行なわれるため装置が犬がかり
になり、任意の場所で用いられるというわけにはいかず
、また、炭酸がスレーザの場合もさらに複雑な制御系を
必要とし、装置自体も大形になる等の欠点があった。As mentioned above, both YAG lasers and carbon dioxide lasers have their own advantages and disadvantages, but in the case of YAG lasers, since the laser uses a relatively large optical output, the device is very dependent and can be used in any location. Moreover, when the carbon dioxide is a slaser, a more complicated control system is required, and the apparatus itself becomes large.
(発明の目的)
そこで本発明は、近年の半導体レーザ素子の高出力化に
伴い、この高出力半導体レーザ素子を用いた、小形、簡
便で、低価格の半導体レーザ血管吻合装置を提供するも
のである。以下、図面によシ実施例を詳細に説明する。(Purpose of the Invention) Accordingly, with the recent increase in the output of semiconductor laser devices, the present invention provides a small, simple, and low-cost semiconductor laser vascular anastomosis device using this high-output semiconductor laser device. be. Hereinafter, embodiments will be described in detail with reference to the drawings.
(実施例)
第2図は、本発明の一実施例1を示し/ともので、■は
電源及び調整器であり、通常、バッテリーと電流調整器
より構成される。2は半導体レーザ素子で、電源及び調
整器1によシ直接駆動され、レーザ光を出射する。この
場合、半導体レーザ素子2は、所要出力に応じて単−又
は複数個の素子となる。3は集光レンズであシ、半導体
レーザ素子2から出射されたレーザ光を照射部位Pに集
光さぜる。4はこ汎らの部品を収納する容器であって、
手に持って操作できる大きさである。このように、半導
体レーザを用いた血管吻合装置は、極めて簡単な4:l
、l、、成で、しかも小形に構成することができる。(Embodiment) Fig. 2 shows a first embodiment of the present invention, in which ◯ indicates a power source and a regulator, which is usually composed of a battery and a current regulator. Reference numeral 2 denotes a semiconductor laser element, which is directly driven by the power supply and regulator 1 and emits laser light. In this case, the semiconductor laser device 2 may be a single device or a plurality of devices depending on the required output. 3 is a condensing lens, which condenses the laser light emitted from the semiconductor laser element 2 onto the irradiation site P. 4 is a container for storing these parts,
It is small enough to be held and operated in your hand. In this way, a vascular anastomosis device using a semiconductor laser is an extremely simple 4:l
, l, , and can be constructed in a small size.
第3図は、本発明の池の実施例を示したもので、第2図
の実施例のものに、さらに、長時間照射のだめの補助車
i1.;i 5 ”&外部にイjし、また、患部に対し
レーザ照射条件全一定にする目的でガイド6を設けてい
る。ガイド6は棒状又は偕)状であって、長さを調fl
ijできるように調節器7全備えている。FIG. 3 shows an embodiment of the pond according to the present invention, which includes an auxiliary vehicle i1 for long-time irradiation in addition to the embodiment of FIG. A guide 6 is provided to the outside and to keep the laser irradiation conditions constant for the affected area.The guide 6 is rod-shaped or in the shape of
It is equipped with all 7 regulators to allow for ij.
(発明の効果)
半導体レーザは、現在、05μm〜32μm程度寸での
広い範、囲の波長のものが得られており、従って、発振
波長を任意に選ぶことができる。まプこ、光出力ては、
大出力のもので500mW程度のものが試作されており
、殊に、波長が1μm帯の半導体レーザではピーク出力
がWオーダのものも実用化されている。これらを用いる
と、極めてコンパクトな血管吻合装置を安価に製作する
ことができ、就中冷却水が不要なため、簡便なポータプ
ル装置としての構成も可能である。(Effects of the Invention) Semiconductor lasers are currently available with a wide wavelength range of about 05 μm to 32 μm, and therefore, the oscillation wavelength can be arbitrarily selected. Mapco, the optical output is
High-output lasers of about 500 mW have been prototyped, and in particular, semiconductor lasers with a wavelength of 1 μm have a peak output of W order, which has been put into practical use. By using these, an extremely compact vascular anastomosis device can be manufactured at low cost, and since no cooling water is required, it is also possible to configure it as a simple porta-pull device.
第1図は、炭酸ガスレーザにおける血管吻合条件を示す
図、第2図は、本発明の一実施例の構成を示す略図、第
3図は、本発明の他の実施例の構成を示す略図である。
1・・・電源及び調整器、2・・・半導体レーザ素子、
3・・・集光レンズ、4・・・容器、5・・・補助車1
源、6・・・ガイド。
特許出願人 東北リコー株式会社
中外製薬株式会社FIG. 1 is a diagram showing the conditions for vascular anastomosis using a carbon dioxide laser, FIG. 2 is a schematic diagram showing the configuration of one embodiment of the present invention, and FIG. 3 is a schematic diagram showing the configuration of another embodiment of the present invention. be. 1... Power source and regulator, 2... Semiconductor laser element,
3... Condensing lens, 4... Container, 5... Auxiliary vehicle 1
Source, 6...Guide. Patent applicant: Tohoku Ricoh Co., Ltd. Chugai Pharmaceutical Co., Ltd.
Claims (1)
レーザ素子を具備し、平均出力が1 mW〜300mW
の半導体レーザ出射手段と、出射された光を血管、神経
等の径に応じて0.3配φ以下の単一スポットに収束さ
ぜる光学手段とからなることを特徴とする半導体レーザ
血管吻合装置。Equipped with one or more semiconductor laser elements that emit coherent light, with an average output of 1 mW to 300 mW
A semiconductor laser vascular anastomosis characterized by comprising a semiconductor laser emitting means and an optical means for converging the emitted light into a single spot of 0.3 diameter or less depending on the diameter of the blood vessel, nerve, etc. Device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58068429A JPS59194733A (en) | 1983-04-20 | 1983-04-20 | Semiconductive laser blood vessel inosculating apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58068429A JPS59194733A (en) | 1983-04-20 | 1983-04-20 | Semiconductive laser blood vessel inosculating apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59194733A true JPS59194733A (en) | 1984-11-05 |
JPS6355939B2 JPS6355939B2 (en) | 1988-11-04 |
Family
ID=13373438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58068429A Granted JPS59194733A (en) | 1983-04-20 | 1983-04-20 | Semiconductive laser blood vessel inosculating apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59194733A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62139642A (en) * | 1985-12-13 | 1987-06-23 | 浜松ホトニクス株式会社 | Blood vessel anastomotic apparatus |
JPH0253714U (en) * | 1988-10-11 | 1990-04-18 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200085593A (en) | 2019-01-07 | 2020-07-15 | 삼성전자주식회사 | Electronic apparatus and contolling method thereof |
-
1983
- 1983-04-20 JP JP58068429A patent/JPS59194733A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62139642A (en) * | 1985-12-13 | 1987-06-23 | 浜松ホトニクス株式会社 | Blood vessel anastomotic apparatus |
JPH0253714U (en) * | 1988-10-11 | 1990-04-18 |
Also Published As
Publication number | Publication date |
---|---|
JPS6355939B2 (en) | 1988-11-04 |
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