JPS59181668A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS59181668A
JPS59181668A JP58055822A JP5582283A JPS59181668A JP S59181668 A JPS59181668 A JP S59181668A JP 58055822 A JP58055822 A JP 58055822A JP 5582283 A JP5582283 A JP 5582283A JP S59181668 A JPS59181668 A JP S59181668A
Authority
JP
Japan
Prior art keywords
formed
type
layer
conductive type
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58055822A
Inventor
Yasutaka Nakatani
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58055822A priority Critical patent/JPS59181668A/en
Publication of JPS59181668A publication Critical patent/JPS59181668A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

Abstract

PURPOSE:To obtain a power longitudinal MOS FET having low ON resistance and low input capacity by forming a gate electrode ultrafinely and forming the channel longitudinally by etching. CONSTITUTION:A high density N type layer 12 is formed on an N type silicon substrate 11, and the first conductive type, i.e., low density N type layer 13 is formed. Then, the second conductive type, i.e., P type channel layer 14 are formed by diffusing, and the third conductive type, i.e., a source layer 15 is formed by n type impurity diffusion. Then, one or more polygonal grooves 21 are formed by etching with and etchant of fluoric acids in the layer 14 and on the periphery. Thereafter, the fourth conductive type, i.e., high density P type layer 16 is formed. Then, an annular gate electrode 19 is formed of polycrystalline silicon or metal directly on the channel. Subsequently, an oxidized film 18 is formed as the second insulating film on the overall surface, and windows for connecting simultaneously the layers 15, 16 to the electrode 20, and the source electrode 20 is formed by aluminum or polysilicon to complete an MOS FET.
JP58055822A 1983-03-31 1983-03-31 Semiconductor device Pending JPS59181668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58055822A JPS59181668A (en) 1983-03-31 1983-03-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58055822A JPS59181668A (en) 1983-03-31 1983-03-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS59181668A true JPS59181668A (en) 1984-10-16

Family

ID=13009644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58055822A Pending JPS59181668A (en) 1983-03-31 1983-03-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS59181668A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry

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