JPS59179781A - Sputtering device - Google Patents

Abstract

PURPOSE:To provide a titled device which enables efficient formation of a surface having good throwing power on an object to be treated by disposing annularly a target group on the outside of said object, and linking the object or the target group to a rotating mechanism. CONSTITUTION:An object 3 to be treated is disposed in a furnace body 2 of a sputtering device 1 and a target group consisting of plural targets 4 composed of materials different from each other is disposed at a specified spacing on the outside of the material 3. The object 3 is placed on a stage 6 connected to a revolving shaft 5 and the object 3 is rotated with respect to each target 4. An alloy-like surface layer having good throwing power is efficiently and uniformly formed on the surface of the object 3. This sputtering device may also be so constructed as to rotate the target group around the object 3.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sputtering apparatus that can uniformly and efficiently form a thin layer of the same material or alloy on the surface of a workpiece.

Generally speaking, there are known sputtering devices that utilize sputtering in which the metal on the cathode side is knocked out by the impact of cations during glow discharge and adheres to the surface of an object near the anode (for example, 6 ot-, 5 ri 3
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These problems can be solved by rotating the object with a large amount of adhesion on the feature surface and a small amount of adhesion in the opposite direction, but in this case, the sputtered atoms scatter in one direction and the film formation rate slows down. However, it had the disadvantage of poor sputtering efficiency.

Also, titanium Ti, chromium Cr, silicon si, boron B
This is possible by using a composite target made of metals such as tantalum, Ta, and zirconium Zr, but such a composite target is expensive to manufacture and also suffers from the above-mentioned problems in terms of uniformity, throwing power, and sputtering efficiency. But there was a problem.

The present invention has been made in view of the above-mentioned problems, and the purpose of the present invention is to provide a dusting device for adhering the battered atoms.Another purpose of the present invention is to provide a dusting device for attaching the battered atoms. To provide a snow tutting device capable of easily, efficiently and inexpensively coating a surface layer of a uniform alloy with good throwing power made of metals and their nitrides, carbides, oxides, etc. It is.

DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below with reference to embodiments with reference to the drawings.

In FIGS. 1 and 2, reference numeral 1 denotes a sputtering device for Madai Tron, in which a workpiece 6 is disposed approximately in the center of the furnace body 2, and on the outside of the workpiece B, −
A plurality of targets 4 made of mutually different materials (in this example, the materials are Ti, Cr, B,
A target group consisting of Si) is arranged in a ring.

The workpiece 6 is placed on a mount 6 connected to a rotating shaft 5, and linked to a motor 9 outside the furnace body 2 via the rotating shaft 5, an insulator 7, and a magnetic seal 8. ing. As a result, the object 6 to be processed rotates relative to each target 4. Each target 4 is located at an equal distance from the object 6 to be processed, and inside thereof, as will be described later, A magnetic field forming body is provided. On the other hand, an electric coil 10 is disposed around the furnace body 2, and this and a magnetic field forming body inside the target apply a magnetic field orthogonal to the electric field between the target 4 and the workpiece 3. There is.

In FIG. 3 showing the details of the rotating structure of the object to be processed A, the motor shaft 9a of the motor 9, which is the source of rotation and actual operation, is connected to the lower furnace of the furnace body 2 (FIG. 1) by means of a flange 8a or a mounting bolt 11. It passes through the magnetic seal 8 attached to the wall 2a, is inserted into the opening 2b in the lower furnace wall 2a, and is screwed onto the lower end of the insulator 7 inside the furnace body 2. A lower end of a lower rotating shaft 12 is screwed onto the upper end of the insulator 7 coaxially with the motor shaft 9a.
A cylindrical insulating insulator 16 is arranged around the single rotation shaft 12.

The upper end of the lower rotating shaft 12 is coaxially screwed onto the lower end 14a of the upper rotating shaft 14, and the two ends of the side rotating shaft 14 are connected to the mounting table for the workpiece 6. 0 is firmly screwed to O. Also, l IU11 rotation 11! Lower end 1 of Ill 14
An electrode terminal 15 in contact with the upper surface of 4a is fixedly attached to a base plate 17 via a mounting tool 16. Due to the contact between the lower end 14a of the upper rotating shaft 14 and the electrode terminal 15,
Current or upper rotation! 1 ill + 14 L, which is due to the fact that it is introduced into the mounting table 6.

Further, as shown in FIG. 7 showing the details of the mounting structure of the target 4, a cylindrical storage pipe 18 having a mounting flange 18a is located at the bottom of the lower furnace wall 2a of the furnace body 2 (FIG. 1). The mounting 7 flange 18a is
is fixed downwardly on the lower furnace wall 2a together with the support plate 19 by a tightening bolt 2 []. An OIJ ring 21 is interposed between the mounting flange 18a and the lower furnace wall 2d, thereby providing a vacuum seal.

A support stand 22 made of alumina insulating material is disposed on the lower furnace wall 2a at the lower part of the outer periphery of the storage pipe 18.
2. A cylinder 26 made of an insulating material made of alumina is disposed surrounding the storage pipe 18.

A cylindrical target 4 is installed on the support base 22 at the outer periphery of the cylinder 23 .

Furthermore, inside the storage tube 18, there is a support plate 1 at the lower end.
A hollow cylindrical cooling 4 fixed to the tube 9 (the narrow diameter part 24 of the tube 24
A magnetic field forming body 25 fitted onto the outside is located. The lower end opening of the cooling water pipe 24 is connected to the cooling water supply pipe 26 fixed to the support plate 19 through the opening 19a of the support plate 19.
As a result, the cooling water (↓) supplied from the cooling water supply pipe 26 passes through the cooling water pipe 24 and flows out from the opening 24b at the upper end of the cooling water pipe 24 to the outside of the cooling water pipe 24, Then, through the storage pipe 18, the support plate 1/-
It is configured to flow out through the outlet 19b of the port 19. This circulation of cooling water cools the target 4 and the magnetic field Jlt body 25, thereby preventing it from being demagnetized by heat accompanying discharge. Note that a sealing material 27 is provided between the mounting flange 18a and the support plate 19.
The water is sealed by the water. Further, the magnetic field forming body 25 is a well-known type made of a permanent magnet or the like. The electrode terminal 34 is attached to the target 4.

No. 1, 28, is a DC power supply, 29 is a vacuum pump, and 30 is an atmospheric gas supply means, which supplies atmospheric gas such as N2 gas or inert gas into the furnace body 2.

In the above configuration, each target 4 is rotated by driving the motor 9 to rotate the workpiece 3 at about 2θ to 3Q rpm in an atmosphere of an inert gas such as AI or a reactive gas such as N2.
When a sputter link device is operated by applying a DC voltage with the object 3 as a cathode and the object 3 as an anode, dissimilar metals (for example, Ti,
The metal atoms ejected from each target 4 made of (Si, B, Cr) adhere to the surface of the workpiece 30 in a compatible state.

Therefore, an alloy-like surface layer is formed on the surface of the object 6 to be processed. In this case, since the object to be processed 6 is rotating, a surface layer is formed on the surface of the object to be processed 3 by efficiently covering the surface of the object.

In the above embodiment, the case where the target 4 is cylindrical is explained, or as shown in FIG.
There is no problem even if it is plate-shaped.

In that case, between the storage pipe 18 and the object 6, the storage pipe 1
8, a mounting stand 62 made of an alumina insulating material is erected on the lower furnace wall 2a of the furnace body 2, and a cuget 61 is mounted and fixed to the mounting stand 62 with a mounting hitch 66. Note that the other configurations are similar to those shown in FIG. 7.

In addition, in the above embodiment, the subject! Although the object 3 is rotated in this embodiment, a rotation mechanism may be linked to the target group, and the target group may be rotated by cutting and closing the object 6 to be processed.

Furthermore, in the above embodiment, the target group is made of different materials and an alloy-like surface layer is formed on the lit object.
Even if sputtering is performed with the target group in the same phase, either the workpiece or the target group is rotated, so a uniform surface layer and good coverage can be obtained, and the entire workpiece is always exposed to the scattering of sputtered atoms. Since they are oriented in opposite directions, it goes without saying that the sputtering efficiency is improved. Further, in the above embodiment, the present invention is applied to a DC magnetoresistive type sputtering apparatus, but it is also applicable to a high frequency type, an ion beam type sputtering apparatus, and the like.

Misfire:! Since the IJ is configured as described above, it is possible to easily form a surface layer of the same material or alloy on the surface of the workpiece with high productivity and efficiency. It has excellent practical effects.

[Brief explanation of the drawing]

The drawings illustrate embodiments of the present invention, and FIG. 7 is an overall configuration diagram of the sputtering apparatus, FIG. 2 is an explanatory diagram showing the positional relationship between the object to be processed and the target, and FIG. FIG. 7 is a detailed sectional view showing a rotating mechanism, FIG. 7 is a detailed sectional view showing a target cooling structure, and FIG. 5 is a similar view to FIG. 7 of a modified example. 1... Sputter link device, 2... Furnace body, 6
...Processed object, 4...Couget, 9.
...Motor, 61...Target note Fig. 1 Fig. 4 Fig. 2 Fig. 3 Fig. 5

Claims (1)

[Claims] (1) The object to be treated is arranged approximately at the center inside the furnace body, while a target group consisting of a plurality of targets is arranged in a ring shape at regular intervals outside the object. 1. A sputtering apparatus characterized in that either a processing object or a group of targets is linked to a rotation mechanism.