JPS59175727A - Plasma etching apparatus - Google Patents

Plasma etching apparatus

Info

Publication number
JPS59175727A
JPS59175727A JP5072283A JP5072283A JPS59175727A JP S59175727 A JPS59175727 A JP S59175727A JP 5072283 A JP5072283 A JP 5072283A JP 5072283 A JP5072283 A JP 5072283A JP S59175727 A JPS59175727 A JP S59175727A
Authority
JP
Japan
Prior art keywords
holding
circumference
path
along
coolant path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5072283A
Inventor
Taiichi Otani
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5072283A priority Critical patent/JPS59175727A/en
Publication of JPS59175727A publication Critical patent/JPS59175727A/en
Application status is Granted legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)

Abstract

PURPOSE:To uniform the physical characteristics of semiconductor wafer at the holding place and obtain the uniform etching characteristic by disposing the coolant path not only to the circumferencial side of lower electrode but also at the center side thereof. CONSTITUTION:A coolant path 23 is guided to the area near the circumference of electrode 21 along the circumference of semiconductor wafer holding place 221 from the coolant path entrance 23a provided at the center of lower electrode 21 and it is thereafter disposed along the external half circumference of the wafer holding positions 221-226. Moreover, the path 23 is folded to the inside along the circumference of the holding position 226 and then extended along the internal half circumference of the holding positions 226-221. Thereafter, it is disposed so that it is fed back to the coolant path exit 23b provided at the center of electrode 21. Since the path 23 is almost symmetrically disposed respectively to the holding places 221-226, the physical characteristics are uniformed within the range of respectively holding positions 221-226 and uniformly of etching rate can be improved.
JP5072283A 1983-03-26 1983-03-26 Plasma etching apparatus Granted JPS59175727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5072283A JPS59175727A (en) 1983-03-26 1983-03-26 Plasma etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5072283A JPS59175727A (en) 1983-03-26 1983-03-26 Plasma etching apparatus

Publications (1)

Publication Number Publication Date
JPS59175727A true JPS59175727A (en) 1984-10-04

Family

ID=12866760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5072283A Granted JPS59175727A (en) 1983-03-26 1983-03-26 Plasma etching apparatus

Country Status (1)

Country Link
JP (1) JPS59175727A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030540U (en) * 1983-08-03 1985-03-01
JPS63311726A (en) * 1987-06-15 1988-12-20 Ulvac Corp Microwave plasma processor
US4859304A (en) * 1988-07-18 1989-08-22 Micron Technology, Inc. Temperature controlled anode for plasma dry etchers for etching semiconductor
WO2004093167A3 (en) * 2003-03-31 2005-06-09 Lam Res Corp Substrate support having temperature controlled surface
US7528073B2 (en) 2004-11-04 2009-05-05 Sumitomo Electric Industries, Ltd. Dry etching method and diffractive optical element
US7810506B2 (en) 2001-05-04 2010-10-12 Philip Morris Usa Inc. Apparatus and method for delaminating parcels of tobacco
CN104167379A (en) * 2013-05-17 2014-11-26 佳能安内华股份有限公司 Etching apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030540U (en) * 1983-08-03 1985-03-01
JPS63311726A (en) * 1987-06-15 1988-12-20 Ulvac Corp Microwave plasma processor
US4859304A (en) * 1988-07-18 1989-08-22 Micron Technology, Inc. Temperature controlled anode for plasma dry etchers for etching semiconductor
US7810506B2 (en) 2001-05-04 2010-10-12 Philip Morris Usa Inc. Apparatus and method for delaminating parcels of tobacco
WO2004093167A3 (en) * 2003-03-31 2005-06-09 Lam Res Corp Substrate support having temperature controlled surface
US7528073B2 (en) 2004-11-04 2009-05-05 Sumitomo Electric Industries, Ltd. Dry etching method and diffractive optical element
CN104167379A (en) * 2013-05-17 2014-11-26 佳能安内华股份有限公司 Etching apparatus
JP2014241394A (en) * 2013-05-17 2014-12-25 キヤノンアネルバ株式会社 Etching apparatus

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