JPS59169179A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS59169179A JPS59169179A JP4219683A JP4219683A JPS59169179A JP S59169179 A JPS59169179 A JP S59169179A JP 4219683 A JP4219683 A JP 4219683A JP 4219683 A JP4219683 A JP 4219683A JP S59169179 A JPS59169179 A JP S59169179A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- forming
- silicon film
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 229910052715 tantalum Inorganic materials 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- -1 phosphorus ions Chemical class 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 150000003481 tantalum Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To accelerate a semiconductor integrated circuit device by forming a 2-layer structure of a tantalum silicide layer and a polycrystalline silicon layer for a gate electrode, and forming a 2-layer structure of a nitrided silicon film and an oxidized silicon film for a gate insulating film, thereby forming an MISFET having stable characteristics. CONSTITUTION:A field oxidized silicon film 2 is formed on the surface of a p type silicon substrate 1, a gate oxidized silicon film 3 is formed, and a nitrided silicon film 4 is formed by a CVD method. A polysilicon film 5 is formed by CVD method, an impurity such as phosphorus is diffused, thereby reducing the resistance by compounding. A tantalum silicide film 6 is formed by a sputtering method, and etched to form a gate electrode pattern. Arsenic or phosphorus ions are implanted to form an ion implanted layer 14, a PSG film 7 is formed, and a heat treatment is executed, thereby forming an N<+> type source layer 8 and drain layer 9. Since the tantalum has small reactivity and is stable substance, stable gate electrode can be readily obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4219683A JPS59169179A (en) | 1983-03-16 | 1983-03-16 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4219683A JPS59169179A (en) | 1983-03-16 | 1983-03-16 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59169179A true JPS59169179A (en) | 1984-09-25 |
Family
ID=12629250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4219683A Pending JPS59169179A (en) | 1983-03-16 | 1983-03-16 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59169179A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6290973A (en) * | 1985-06-25 | 1987-04-25 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS63221647A (en) * | 1987-03-10 | 1988-09-14 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US5280190A (en) * | 1991-03-21 | 1994-01-18 | Industrial Technology Research Institute | Self aligned emitter/runner integrated circuit |
| US7099487B2 (en) | 2001-02-02 | 2006-08-29 | Temco Japan Co., Ltd. | Microphone with arm |
-
1983
- 1983-03-16 JP JP4219683A patent/JPS59169179A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6290973A (en) * | 1985-06-25 | 1987-04-25 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS63221647A (en) * | 1987-03-10 | 1988-09-14 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US5280190A (en) * | 1991-03-21 | 1994-01-18 | Industrial Technology Research Institute | Self aligned emitter/runner integrated circuit |
| US7099487B2 (en) | 2001-02-02 | 2006-08-29 | Temco Japan Co., Ltd. | Microphone with arm |
| KR100840857B1 (en) * | 2001-02-02 | 2008-06-23 | 가부시기가이샤 템코 재팬 | Microphone with arm |
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