JPS59165484A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS59165484A JPS59165484A JP3986783A JP3986783A JPS59165484A JP S59165484 A JPS59165484 A JP S59165484A JP 3986783 A JP3986783 A JP 3986783A JP 3986783 A JP3986783 A JP 3986783A JP S59165484 A JPS59165484 A JP S59165484A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- point
- composition
- active layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3218—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities specially strained cladding layers, other than for strain compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
Abstract
Description
【発明の詳細な説明】 本発明は半導体レーザの構造に関するものである。[Detailed description of the invention] The present invention relates to the structure of a semiconductor laser.
波長１．０〜１．６丸帯の半導体レーザの材料としては
、ＩｎＰに格子整合するＩ ｎ １−ｘ Ｇａｘ Ｐ
１−ｙ Ａｓｙ（，０＜Ｘ、 ７＜１ ）が用いられて
いる。この場合基本的彦ダブルへテロ接合構造を得るた
めに、例えは第１図（ａ）に示した模造が採用されてい
る。すなわち、ｎ型ＩｎＰ基板１上にｎ型ＩｎＰバッフ
ァークラッド層２、ｎまたはＰ型Ｉｎ１−ＸＧａｘＰｌ
−ｙＡｓｙ（０＜ｘ、ｙ＜１）活性層６、Ｐ型ＩｎＰク
ラッド層４を順次成長させ、両性面にＰ−（ｆｉ１１電
極５およびｎ側電極６を形成した構造である。■ｎ１−
ＸＧａＸＰ１−ｙＡｓｙ４元混晶組成と、バンド・ギャ
ップ・エネルギーＥｇ、格子定数α０．光学的誘電率ε
との関係は第２図に示したようになっている。第２図に
おいて、αｏ ＝ ５．８７＾と印された一点鎖線はＩ
ｎＰに格子整合する組成を表わし、破線はそわそわ、印
さ力た値のバンド・ギャップ・エネルギーを有する組成
を表わし、また点線はそれぞれ印さねた値の光学的誘電
率を有する組成を表わす。活性層０／クンド・ギャップ
・エネルギーを例えば０．９ｅＶとした場合、Ｉｎ １
−ｘ ＧａｘＰ ｉ−ｙ Ａｓｙの組成は第２図中のＡ
点に相当している。このとき層厚に沿った方向での格子
定数ａｏ、バンド・ギャップ・エネルギ＝Ｅｇおよび光
学的誘電率εの分布は第１図（ｂ）〜（ｄ）にしたクラ
ブのようになっており、クラッド層２ち・よひ４−１性
Ｍ３に比へ大きいノ（ンド・ギャップ゛・エネルギーと
小さい光学的誘電、率を有する結果、乙ト入−机子およ
び光の活性層３への有効な閉じ込め力く百ｌ倉目であり
、ダブルへテロ接合構造の半導体レーザと１−２で動作
可能な構造になっている。１７カ・し２上ｉＬ；の従来
構造は、以下に述べるようなあ・よそ３和目の欠点を有
する。As a material for a semiconductor laser with a wavelength of 1.0 to 1.6 round band, I n 1-x Gax P which is lattice matched to InP is used.
1-y Asy(,0<X, 7<1) is used. In this case, in order to obtain the basic double heterojunction structure, the imitation shown in FIG. 1(a) is employed, for example. That is, on an n-type InP substrate 1, an n-type InP buffer cladding layer 2, an n-type or P-type In1-XGaxPl
-yAsy (0<x, y<1) This is a structure in which an active layer 6 and a P-type InP cladding layer 4 are grown in sequence, and a P-(fi11 electrode 5 and an n-side electrode 6 are formed on the amphoteric surface.■n1-
XGaXP1-yAsy quaternary mixed crystal composition, band gap energy Eg, lattice constant α0. optical permittivity ε
The relationship between the two is shown in Figure 2. In Figure 2, the dashed line marked αo = 5.87^ is I
The dashed lines represent compositions that are lattice matched to nP, the dashed lines represent compositions with band gap energies of the values marked, and the dotted lines represent compositions with optical dielectric constants of the respective values marked. For example, when the active layer 0/kund gap energy is 0.9 eV, In 1
-x GaxP i-y The composition of Asy is A in Figure 2.
corresponds to a point. At this time, the distribution of the lattice constant ao, band gap energy = Eg, and optical permittivity ε in the direction along the layer thickness resembles the club shown in Fig. 1 (b) to (d). As a result of the cladding layer 2 having a larger band gap energy and smaller optical dielectric constant compared to the 4-1 property M3, it is possible to effectively transfer light into the active layer 3. The confinement force is 100 liters, and it has a structure that can be operated in conjunction with a semiconductor laser with a double heterojunction structure.・Has a disadvantage of the third sum.
第１の欠点は、Ｉｎ１ 、ＧａＸＰｌ−ｙＡｓｙ４元混
晶（１、例えば発明者による論文シャツくニーズ・ジャ
ーシール・オブ・アプライドフィジックス第２１巻７９
７頁（１９８２年刊）に示されているように、また第２
図中の実線による曲線によって示したように、５００〜
７００℃の温度域において広い混合不安定域を有し、そ
の範囲は例えば６００℃においてＩｎＰに格子整合し、
かつバンド・ギャップ・エネルギーＥｇが０．８〜１．
ＯｅＶとなる組成域を包含していることによる。この混
合不安定域の存在のために、６００℃以下で液相成長法
または気相成長法により結晶成長を行なうと、混合不安
定域内の組成に相自するＩｎ１−ＸＧａＸＰｌ ｙＡ８
ｙ ４元混晶は均一な単結晶の状態でエピタキシャル成
長できない。従ってＩｎＰ基板上にＥｇ二０８〜１．Ｏ
ｅＶの活性層を有するダブルへテロ接合構造半導体レー
ザを作成するに際しては、従来６００℃以上具体的には
６５０℃付近の高温が不可欠であった。第２の欠点は、
活性層が４元混晶であることにより所望組成の成長条件
把握の手順が複雑になり、壕だ成長時の組成制御にも格
段の注意がを求さねるということである。さらに第６の
欠点としてレーザ動作上の欠点が挙けられる。すなわち
、活性層が例えばＥｇ ＝ ０．９ ｅＶの場合、Ｉｎ
Ｐクラッド層とのバンド・ギャップ・エネルギー差がｏ
、４ｓｅＶＬかなく、高温動作時の注入電子閉じ込めの
効果が不十分となり光出力特性飽和現象を引き起こすと
いう不都合が存在していた。The first drawback is that In1, GaXPl-yAsy quaternary mixed crystal (1,
7 (published in 1982), and the second
As shown by the solid line curve in the figure, 500~
It has a wide mixing instability range in the temperature range of 700°C, and this range is lattice matched to InP at 600°C, for example.
and the band gap energy Eg is 0.8 to 1.
This is due to the fact that it includes a composition range that is OeV. Due to the existence of this mixed unstable region, when crystal growth is performed by liquid phase growth or vapor phase growth at temperatures below 600°C, In1-XGaXPlyA8 whose composition is compatible with the mixed unstable region is formed.
y A quaternary mixed crystal cannot be epitaxially grown in a uniform single crystal state. Therefore, Eg208~1. O
When producing a double heterojunction structure semiconductor laser having an eV active layer, a high temperature of 600° C. or higher, specifically around 650° C., has conventionally been essential. The second drawback is
Since the active layer is a quaternary mixed crystal, the procedure for ascertaining the growth conditions for the desired composition becomes complicated, and special care must be taken in controlling the composition during trench growth. Furthermore, a sixth drawback is a drawback in terms of laser operation. That is, if the active layer is, for example, Eg = 0.9 eV, In
The band gap energy difference with the P cladding layer is o
, 4seVL, and the effect of confining the injected electrons during high-temperature operation is insufficient, causing a phenomenon of optical output characteristic saturation.
本発明の目的は、以上述べたような従来構造の６項目に
のぼる欠点を一挙に除去し７、ＩｎＰを基板として用い
、活性層のバンド・ギャップ・エネルギーが０．８〜１
．３ｅＶであるダブルへテロ接合半導体レーザにおいて
、６００℃以下の低温における成長か可能で、４元混晶
組成制御上の困難がかく、かつ半導体レーザの良好な高
温動作が実現できる構造を提供することにある。すなわ
ち、本発明は、基板、第１のクラッド層、活性層および
第２のクラッド凧をそれぞｎ ＩｎＰ、 Ｉｎ１−ｘＧ
ａｘＰ （０＜ｘ＜１ ）、Ｉｎ１−７Ｇａｚ Ａｓ（
０＜ ｚ ＜ １ ）および■ｎ１−ＸＩＧａＸＩＰ（
０＜Ｘ′＜１）Ｉ／（：より栴成ｌ−５、かつ第１のク
ラッド層の組成比ｘ’ｚ−基板と活性層との間で連続的
に像化させて基板との界面および活性層との界面のそね
そ）１において格子定数をｔ′９ぼ整合させた構造を用
いることを剃徴とするものである。The purpose of the present invention is to eliminate all six drawbacks of the conventional structure as described above7, and to use InP as a substrate so that the band gap energy of the active layer is 0.8 to 1.
．． To provide a structure in a double heterojunction semiconductor laser having a voltage of 3 eV that allows growth at a low temperature of 600° C. or lower, eliminates difficulties in controlling the quaternary mixed crystal composition, and realizes good high-temperature operation of the semiconductor laser. It is in. That is, in the present invention, the substrate, the first cladding layer, the active layer, and the second cladding are made of nInP, In1-xG, respectively.
axP (0<x<1), In1-7Gaz As(
0<z<1) and ■n1-XIGaXIP(
0 < The key point is to use a structure in which the lattice constants are matched by t'9 at the interface with the active layer (1).
以下本発明について、実施例を参照１−ながら詳細に説
明する。本実施例における半導体レーザの構造を第６図
（ａ）に示した。本実施例でｌｄＥｇ＝ｏ、９ｅＶなる
活性層を用いている。第６図におけるｎまたはＰ型活性
層８は、第２図中のＢ点で表わされる６元混晶Ｉｎ。３
８Ｇａｏ、６□Ａｓより成る。Ｂ点はＡ点の組成とバン
ド・ギャップ・エネルギーは等しいが格子定数α０は異
なり、αｏ＝５．８ＣＩＡである。緋２図より明らかな
ようにＢ点は５００℃はどの低温においても混合不安定
域に属さない。活性ノー８に次いで成長させるＰ型クラ
ッド層９としては゛第２図中において、Ｂ点と同一の格
子定数を有する０点で表わされる６元混晶Ｉｎ。、、
Ｇａ６１６Ｐを用いている。The present invention will be described in detail below with reference to Examples. The structure of the semiconductor laser in this example is shown in FIG. 6(a). In this embodiment, an active layer with ldEg=o and 9 eV is used. The n- or p-type active layer 8 in FIG. 6 is made of six-element mixed crystal In represented by point B in FIG. 3
It consists of 8 Gao and 6□As. Point B has the same composition and band gap energy as point A, but a different lattice constant α0, αo=5.8CIA. As is clear from Figure 2, point B does not belong to the unstable mixing region at any low temperature of 500°C. The P-type cladding layer 9 to be grown next to the active layer 8 is a 6-element mixed crystal In represented by point 0 having the same lattice constant as point B in FIG. ,,
Ga616P is used.
ＩｎＰ基板１に隣接するｎ型クラッド層７としてに、Ｉ
ｎＰとＩｎ。８． Ｇａｏ、６Ｐ （０点）との間で組
成を連続的に変化させた層を用い、基板１との界面およ
び活性層８との界面においてほぼ格子整合している。As the n-type cladding layer 7 adjacent to the InP substrate 1, I
nP and In. 8. A layer in which the composition is continuously changed between Gao and 6P (point 0) is used, and the interface with the substrate 1 and the interface with the active layer 8 are substantially lattice matched.
このような組成変化層の作成は気相成長法により容易に
達せられる。また本実施例の構造では４元混晶は一切用
いられておらず、高々６元混晶を用いているだけである
ので、結晶成長条件の把握手順が大幅に簡略化され、さ
らに成長時の精密組成制御が比較的容易に達せられると
いう利点がある。Formation of such a compositionally variable layer can be easily achieved by a vapor phase growth method. In addition, the structure of this example does not use any quaternary mixed crystals, and only uses six-element mixed crystals at most, so the procedure for determining the crystal growth conditions is greatly simplified, and the The advantage is that precise compositional control is relatively easy to achieve.
本実施例の構造において層厚に泊った方向での格子定数
ａＯ、バンド・キャップ・エネルギーＥｇ、および光学
的誘電率εの分布は第３図（ｂ）〜（ｄ）に示しまたグ
ラフのようになっており、ダブルへテロ接合構造半導体
レーザの動作に必要な注入電子および光の活性層８への
閉じ込めが行なえる格かになっている。しかもクラッド
層７および９と活性層８とのバンド・ギャップ・エネル
ギー差が第１図に示した従来例よりもｏ１ｅＶ１ｅＶ大
しており、才だ光学的誘電率差も増大しているので、上
記の閉じ込め効果はより顕著であり、高温動作時の注入
電子の活性層からのもれが大幅に軽減され光出力飽和の
少ない良好なレーザ特性が実現できる。In the structure of this example, the distribution of the lattice constant aO, band cap energy Eg, and optical permittivity ε in the direction of the layer thickness is shown in FIGS. This makes it possible to confine injected electrons and light in the active layer 8, which are necessary for the operation of a double heterojunction structure semiconductor laser. Moreover, the band gap energy difference between the cladding layers 7 and 9 and the active layer 8 is 1eV1eV larger than that of the conventional example shown in FIG. The effect is more remarkable, and the leakage of injected electrons from the active layer during high-temperature operation is significantly reduced, making it possible to realize good laser characteristics with less optical output saturation.
以上の実施例では活性層のバンド・ギャップ・エネルギ
ーＥｇを０．９ｅＶとした場合について述べたが、Ｅｇ
＝ ０．８〜１．３ ｅＶの任意の帯域においても、
活性層組成およびクラッド層組成を上記の場合と同様に
１−て決定すれば全く同様の効果が実現できることは明
らかである。In the above embodiment, the case where the band gap energy Eg of the active layer was 0.9 eV was described, but Eg
= In any band from 0.8 to 1.3 eV,
It is clear that exactly the same effect can be achieved if the active layer composition and cladding layer composition are determined in the same way as in the above case.
以上説明したように、活性層のバンド・ギャップ・エネ
ルギーを０．８〜１．３ ｅＶとするダブルへテロ接合
半導体レーザにおいて、基板、第１のクラッド層、活性
層、および第２のクラッド層をそす１ぞり、、 ＩｎＰ
、Ｉｎ １−ｘ ＧａＸＰ、工ｎ１．−ｚＧａｚＡｓお
よび■ｎ１−Ｘ１Ｇａｘ’Ｐにより構成し７、第１のク
ラッド層の組成比Ｘを基板と活性層との間で連続的に変
化させて基板との界面および活性層との界面のそれぞね
において格子定数をほぼ整合させた構造を用いることに
より、本発明によれば６００℃以下の低温成長が可能で
組成制御が容易でありかつ高温動作の良好な半導体レー
ザを実現できる効果を有するものである。As explained above, in a double heterojunction semiconductor laser in which the band gap energy of the active layer is 0.8 to 1.3 eV, the substrate, the first cladding layer, the active layer, and the second cladding layer are 1 sled,, InP
, In 1-x GaXP, Eng n1. -zGazAs and ■n1-X1Gax'P7, and by continuously changing the composition ratio X of the first cladding layer between the substrate and the active layer, the interface with the substrate and the active layer is By using a structure in which the lattice constants are almost matched in the zone, the present invention has the effect of realizing a semiconductor laser that can be grown at a low temperature of 600° C. or less, can easily control the composition, and has good high-temperature operation. It is something.
第１図（ａ）は従来のダブルへテロ接合半導体レーザの
構造を示す図、（ｂ）は格子定数、（ｃ）はバンド・ギ
ャップ・エネルギー、（ｄ） ｉｄ光学的誘電率の分布
図、第２図はＩｎ１ 、ＧａｘＰｌ−ｙＡｓｙ４元混晶
における組成と格子定数、バンド・ギャップ・エネルギ
ー、および光学的誘電率との関係および混合不安定域の
範囲を示す図、第５図（ａ）は本発明の実施例における
ダブルへテロ接合半導体レーザの構造を示す図（ｂ）は
格子定数、（ｃ）はバンド・ギャップ・エネルギー、（
ｄ）は光学的誘電率の分布図である。
図において、１・・・ｎ型ＩｎＰ基板、５・・Ｐ側電極
、６ ＝＝ ｎ細筒；極、７・・・ｎ型Ｉｎ１−ｘＧａ
ｘＰクラッド層、８ ・＝ ｎまたはＰ型Ｉ ｎ １−
ｚ ’−ｘａ ｚ Ａｓ活性層、９− ｐ型” １−
ｘ ’ＧａＸｔＰクラッド層。
特許出願人 日本市、気株式会社Figure 1 (a) shows the structure of a conventional double heterojunction semiconductor laser, (b) shows the lattice constant, (c) shows the band gap energy, and (d) shows the distribution of the id optical permittivity. Figure 2 is a diagram showing the relationship between the composition, lattice constant, band gap energy, and optical permittivity in In1, GaxPl-yAsy quaternary mixed crystals, and the range of the mixing unstable region. Figure 5 (a) is Diagram (b) showing the structure of a double heterojunction semiconductor laser in an embodiment of the present invention shows the lattice constant, (c) the band gap energy, (
d) is a distribution diagram of optical permittivity. In the figure, 1... n-type InP substrate, 5... P-side electrode, 6 == n thin tube; pole, 7... n-type In1-xGa
xP cladding layer, 8 ・= n or P type I n 1−
z'-xa z As active layer, 9- p-type" 1-
x'GaXtP cladding layer. Patent applicant Nippon City, Ki Co., Ltd.
Claims (1)
板上に第１導電型を有する半導体より成る第１のクラッ
ド層、第１もし２くは第２の導電型を有する半導体より
成る活性層、および第２導電型を惰する半導体より成る
第２のクラッド層をＩＩＦ＋次形成し７、かつ前記第１
および第２のクラッド層が前記活性Ｊ＠に比較（−て大
きいバンドギギツフ・エネルギーと小さい光学的誘電率
とを有するダブルへテロ接合構造半導体レーザにおいて
、前記基オル、第１のクラッド層、活性層および第２の
クラッド層をそわそわ、ＩｎＰ、 Ｉｎ１−ＸＧａｘＰ
（（］＜ｘ＜ １ ） 、 Ｉｎ１−２Ｇａｚ Ａｓ
（０＜ ｚ ＜ １ ） ＋およびＩ ｎ １−ｘ
１Ｇａｘ ’ Ｐ （０＜ｘ’＜１ ）により構成し７
、かつ前記第１のクラッドＪ曽の組成比を前記基板と活
性層との間で連続的に変化させて基板との界面および活
性層との界面のそわそわにおいで格子定数をほぼ整合さ
せたことを特徴とする半導体レーザ。+11 A first cladding layer made of a semiconductor having a first conductivity type on a single crystal substrate made of a semiconductor having a first conductivity type, an active layer made of a semiconductor having a first or second conductivity type, and forming a second cladding layer made of a semiconductor having a second conductivity type;
and a second cladding layer has a large bandgif energy and a small optical dielectric constant compared to the active J@, in a double heterojunction semiconductor laser, the base layer, the first cladding layer, the active layer and fidget the second cladding layer, InP, In1-XGaxP
((]<x<1), In1-2Gaz As
(0 < z < 1) + and I n 1-x
1Gax' P (0<x'<1)7
, and the composition ratio of the first cladding J is continuously changed between the substrate and the active layer to substantially match the lattice constants at the interface with the substrate and the interface with the active layer. A semiconductor laser featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3986783A JPS59165484A (en) | 1983-03-10 | 1983-03-10 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3986783A JPS59165484A (en) | 1983-03-10 | 1983-03-10 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59165484A true JPS59165484A (en) | 1984-09-18 |
Family
ID=12564918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3986783A Pending JPS59165484A (en) | 1983-03-10 | 1983-03-10 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59165484A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0616400A2 (en) * | 1993-03-18 | 1994-09-21 | Fujitsu Limited | Semiconductor laser |
| JPH06280323A (en) * | 1993-03-30 | 1994-10-04 | Natl House Ind Co Ltd | External wall |
-
1983
- 1983-03-10 JP JP3986783A patent/JPS59165484A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0616400A2 (en) * | 1993-03-18 | 1994-09-21 | Fujitsu Limited | Semiconductor laser |
| EP0616400A3 (en) * | 1993-03-18 | 1995-01-11 | Fujitsu Ltd | Semiconductor laser. |
| JPH06280323A (en) * | 1993-03-30 | 1994-10-04 | Natl House Ind Co Ltd | External wall |
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