JPS5916367A - マルチトランジスタ - Google Patents

マルチトランジスタ

Info

Publication number
JPS5916367A
JPS5916367A JP57125541A JP12554182A JPS5916367A JP S5916367 A JPS5916367 A JP S5916367A JP 57125541 A JP57125541 A JP 57125541A JP 12554182 A JP12554182 A JP 12554182A JP S5916367 A JPS5916367 A JP S5916367A
Authority
JP
Japan
Prior art keywords
lead
collector
emitter
electrode
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57125541A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0126545B2 (https=
Inventor
Tadashi Saito
正 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority to JP57125541A priority Critical patent/JPS5916367A/ja
Publication of JPS5916367A publication Critical patent/JPS5916367A/ja
Publication of JPH0126545B2 publication Critical patent/JPH0126545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57125541A 1982-07-19 1982-07-19 マルチトランジスタ Granted JPS5916367A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57125541A JPS5916367A (ja) 1982-07-19 1982-07-19 マルチトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57125541A JPS5916367A (ja) 1982-07-19 1982-07-19 マルチトランジスタ

Publications (2)

Publication Number Publication Date
JPS5916367A true JPS5916367A (ja) 1984-01-27
JPH0126545B2 JPH0126545B2 (https=) 1989-05-24

Family

ID=14912745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57125541A Granted JPS5916367A (ja) 1982-07-19 1982-07-19 マルチトランジスタ

Country Status (1)

Country Link
JP (1) JPS5916367A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094252A (ja) * 2007-10-05 2009-04-30 New Japan Radio Co Ltd 電力増幅器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5162979A (https=) * 1974-11-29 1976-05-31 Mitsubishi Electric Corp
JPS5255476A (en) * 1975-10-31 1977-05-06 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5162979A (https=) * 1974-11-29 1976-05-31 Mitsubishi Electric Corp
JPS5255476A (en) * 1975-10-31 1977-05-06 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094252A (ja) * 2007-10-05 2009-04-30 New Japan Radio Co Ltd 電力増幅器

Also Published As

Publication number Publication date
JPH0126545B2 (https=) 1989-05-24

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