JPS59158515A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS59158515A
JPS59158515A JP58032126A JP3212683A JPS59158515A JP S59158515 A JPS59158515 A JP S59158515A JP 58032126 A JP58032126 A JP 58032126A JP 3212683 A JP3212683 A JP 3212683A JP S59158515 A JPS59158515 A JP S59158515A
Authority
JP
Japan
Prior art keywords
layer
film
si layer
formed
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58032126A
Inventor
Ryoichi Mukai
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58032126A priority Critical patent/JPS59158515A/en
Publication of JPS59158515A publication Critical patent/JPS59158515A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683Continuous wave laser beam
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • H01L21/02598Microstructure monocrystalline
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691Scanning of a beam
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2022Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials

Abstract

PURPOSE:To improve the characteristics and yield of S-O-I composition by a method wherein an energy beam absorbing layer is provided on a non-single- crystal semiconductor layer with a thermal-resistive layer in between and the temperature is elevated by the application of the energy beam to heat and melt the semiconductor layer. CONSTITUTION:In order to compose a semiconductor device of S-O-I composition, an Si3N4 anti-oxidization film pattern 16, which has an SiO2 film 15 underneath, is formed covering an element forming domain of a polycrystalline silicon layer 14. A field SiO2 film 17 is formed by thermal oxidization in order to divide and isolate the polycrystalline Si layer 14 into an island shape. After the pattern 16 is removed, a PSG film 21, formed on an Si3N4 film 18, a polycrystalline Si layer 19 and an Si3N4 film 20, is used as an anti-reflection film ARF for the scanning by a continuous wave argon laser beam L. The polycrystalline Si layer 14 is successively heated and melted by the heat conduction from the polycrystalline Si layer 19 and re-crystallized to form a single crystal Si layer 24. Each layer is successively etched and an island shape single crystal Si layer 24 is formed.
JP58032126A 1983-02-28 1983-02-28 Manufacture of semiconductor device Pending JPS59158515A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58032126A JPS59158515A (en) 1983-02-28 1983-02-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58032126A JPS59158515A (en) 1983-02-28 1983-02-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS59158515A true JPS59158515A (en) 1984-09-08

Family

ID=12350186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58032126A Pending JPS59158515A (en) 1983-02-28 1983-02-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS59158515A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145819A (en) * 1984-12-20 1986-07-03 Sony Corp Heat processing method for semiconductor thin film
JP2004509472A (en) * 2000-09-11 2004-03-25 ウルトラテック インク Thermally induced phase switching of laser thermal processing
JP2004509466A (en) * 2000-09-11 2004-03-25 ウルトラテック インク How to annealing using the partial absorbing layer exposed to radiant energy, and using the partial absorbing layer article

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208124A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5814524A (en) * 1981-07-17 1983-01-27 Fujitsu Ltd Manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208124A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5814524A (en) * 1981-07-17 1983-01-27 Fujitsu Ltd Manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145819A (en) * 1984-12-20 1986-07-03 Sony Corp Heat processing method for semiconductor thin film
JP2004509472A (en) * 2000-09-11 2004-03-25 ウルトラテック インク Thermally induced phase switching of laser thermal processing
JP2004509466A (en) * 2000-09-11 2004-03-25 ウルトラテック インク How to annealing using the partial absorbing layer exposed to radiant energy, and using the partial absorbing layer article

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