JPS59141230A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS59141230A
JPS59141230A JP58016588A JP1658883A JPS59141230A JP S59141230 A JPS59141230 A JP S59141230A JP 58016588 A JP58016588 A JP 58016588A JP 1658883 A JP1658883 A JP 1658883A JP S59141230 A JPS59141230 A JP S59141230A
Authority
JP
Japan
Prior art keywords
pattern
ultraviolet rays
resist
irradiation
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58016588A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544169B2 (OSRAM
Inventor
Kazuhiro Tanaka
和裕 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58016588A priority Critical patent/JPS59141230A/ja
Publication of JPS59141230A publication Critical patent/JPS59141230A/ja
Publication of JPH0544169B2 publication Critical patent/JPH0544169B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58016588A 1983-02-02 1983-02-02 パタ−ン形成方法 Granted JPS59141230A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58016588A JPS59141230A (ja) 1983-02-02 1983-02-02 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58016588A JPS59141230A (ja) 1983-02-02 1983-02-02 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS59141230A true JPS59141230A (ja) 1984-08-13
JPH0544169B2 JPH0544169B2 (OSRAM) 1993-07-05

Family

ID=11920429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58016588A Granted JPS59141230A (ja) 1983-02-02 1983-02-02 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS59141230A (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373518A (ja) * 1986-09-16 1988-04-04 Matsushita Electronics Corp パタ−ン形成方法
JPH0348253A (ja) * 1989-07-17 1991-03-01 Nippon Telegr & Teleph Corp <Ntt> パタン形成方法
JPH05152199A (ja) * 1991-11-27 1993-06-18 Nec Kansai Ltd レジストパターン形成方法
CN1078741C (zh) * 1995-08-16 2002-01-30 日本电气株式会社 用干法刻蚀在半导体衬底上形成金属布线的方法
CN1080929C (zh) * 1995-06-26 2002-03-13 现代电子产业株式会社 形成半导体器件精细图形的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110974A (OSRAM) * 1975-03-25 1976-09-30 Sanyo Electric Co
JPS5655943A (en) * 1979-10-12 1981-05-16 Fujitsu Ltd Pattern forming method
JPS5676530A (en) * 1979-11-27 1981-06-24 Fujitsu Ltd Exposure of resist
JPS5712522A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Forming method of pattern

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110974A (OSRAM) * 1975-03-25 1976-09-30 Sanyo Electric Co
JPS5655943A (en) * 1979-10-12 1981-05-16 Fujitsu Ltd Pattern forming method
JPS5676530A (en) * 1979-11-27 1981-06-24 Fujitsu Ltd Exposure of resist
JPS5712522A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Forming method of pattern

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373518A (ja) * 1986-09-16 1988-04-04 Matsushita Electronics Corp パタ−ン形成方法
JPH0348253A (ja) * 1989-07-17 1991-03-01 Nippon Telegr & Teleph Corp <Ntt> パタン形成方法
JPH05152199A (ja) * 1991-11-27 1993-06-18 Nec Kansai Ltd レジストパターン形成方法
CN1080929C (zh) * 1995-06-26 2002-03-13 现代电子产业株式会社 形成半导体器件精细图形的方法
CN1078741C (zh) * 1995-08-16 2002-01-30 日本电气株式会社 用干法刻蚀在半导体衬底上形成金属布线的方法

Also Published As

Publication number Publication date
JPH0544169B2 (OSRAM) 1993-07-05

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