JPS59135728A - 電子ビ−ム露光方法 - Google Patents
電子ビ−ム露光方法Info
- Publication number
- JPS59135728A JPS59135728A JP954783A JP954783A JPS59135728A JP S59135728 A JPS59135728 A JP S59135728A JP 954783 A JP954783 A JP 954783A JP 954783 A JP954783 A JP 954783A JP S59135728 A JPS59135728 A JP S59135728A
- Authority
- JP
- Japan
- Prior art keywords
- rectangular
- electron beam
- cross
- exposure
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP954783A JPS59135728A (ja) | 1983-01-24 | 1983-01-24 | 電子ビ−ム露光方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP954783A JPS59135728A (ja) | 1983-01-24 | 1983-01-24 | 電子ビ−ム露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59135728A true JPS59135728A (ja) | 1984-08-04 |
| JPH047090B2 JPH047090B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-02-07 |
Family
ID=11723297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP954783A Granted JPS59135728A (ja) | 1983-01-24 | 1983-01-24 | 電子ビ−ム露光方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59135728A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5843603A (en) * | 1995-08-25 | 1998-12-01 | Kabushiki Kaisha Toshiba | Method of evaluating shaped beam of charged beam writer and method of forming pattern |
| JP2017143187A (ja) * | 2016-02-10 | 2017-08-17 | 株式会社ニューフレアテクノロジー | 成形アパーチャアレイの評価方法 |
-
1983
- 1983-01-24 JP JP954783A patent/JPS59135728A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5843603A (en) * | 1995-08-25 | 1998-12-01 | Kabushiki Kaisha Toshiba | Method of evaluating shaped beam of charged beam writer and method of forming pattern |
| JP2017143187A (ja) * | 2016-02-10 | 2017-08-17 | 株式会社ニューフレアテクノロジー | 成形アパーチャアレイの評価方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH047090B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-02-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE102017221163B4 (de) | Strukturinspektionseinrichtung | |
| DE102017101340B4 (de) | Verfahren zur Simulation eines fotolithographischen Prozesses zur Erzeugung einer Wafer-Struktur | |
| DE102006054820A1 (de) | Verfahren zur Korrektur von Platzierungsfehlern | |
| DE112004001942T5 (de) | Kombinierte Musterung mit Gräben | |
| US4132575A (en) | Method of producing three-dimensional replica | |
| JPS59135728A (ja) | 電子ビ−ム露光方法 | |
| JP2862532B2 (ja) | 荷電粒子線描画方法およびその装置 | |
| JP3344347B2 (ja) | 近接効果補正方法及びebマスク | |
| JP3568511B2 (ja) | パターン露光方法および露光装置 | |
| DE1522285A1 (de) | Verfahren zur Erzeugung von Mikrostrukturen auf einem Substrat | |
| DE1572195A1 (de) | Verfahren zur Herstellung von Mikrostrukturen kleiner Linienbreite | |
| JPH04311025A (ja) | 露光方法 | |
| JPH01258419A (ja) | パターン形成方法 | |
| JP3173025B2 (ja) | 露光方法及び半導体素子の製造方法 | |
| JP2711194B2 (ja) | 露光装置 | |
| CN119058085B (zh) | 一种光固化3d打印过程的全向能量场控制方法及系统 | |
| JPH02140914A (ja) | 半導体装置の製造方法 | |
| JPH07240361A (ja) | レジストパターン形成方法 | |
| DE102022211457A1 (de) | Inspektionseinrichtung und Fokuspositions-Justierverfahren | |
| DE102018111880A1 (de) | Belichtungsverfahren | |
| JPS60111428A (ja) | レジストパタ−ン形成方法 | |
| JP2835109B2 (ja) | 荷電ビーム描画方法 | |
| JP3227842B2 (ja) | Lsiの製造方法 | |
| JPH065502A (ja) | 露光データ変換方法および露光データ変換装置 | |
| JPS6279622A (ja) | パタ−ン形成方法 |