JPS59127894A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS59127894A
JPS59127894A JP298383A JP298383A JPS59127894A JP S59127894 A JPS59127894 A JP S59127894A JP 298383 A JP298383 A JP 298383A JP 298383 A JP298383 A JP 298383A JP S59127894 A JPS59127894 A JP S59127894A
Authority
JP
Japan
Prior art keywords
layer
znse1
type
semiconductor laser
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP298383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0370392B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Minato
湊　哲男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP298383A priority Critical patent/JPS59127894A/ja
Publication of JPS59127894A publication Critical patent/JPS59127894A/ja
Publication of JPH0370392B2 publication Critical patent/JPH0370392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP298383A 1983-01-11 1983-01-11 半導体レ−ザ Granted JPS59127894A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP298383A JPS59127894A (ja) 1983-01-11 1983-01-11 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP298383A JPS59127894A (ja) 1983-01-11 1983-01-11 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS59127894A true JPS59127894A (ja) 1984-07-23
JPH0370392B2 JPH0370392B2 (enrdf_load_stackoverflow) 1991-11-07

Family

ID=11544601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP298383A Granted JPS59127894A (ja) 1983-01-11 1983-01-11 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS59127894A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102084A (ja) * 1984-10-25 1986-05-20 Nec Corp 半導体レ−ザ
JPS63191657U (enrdf_load_stackoverflow) * 1987-01-20 1988-12-09

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102084A (ja) * 1984-10-25 1986-05-20 Nec Corp 半導体レ−ザ
JPS63191657U (enrdf_load_stackoverflow) * 1987-01-20 1988-12-09

Also Published As

Publication number Publication date
JPH0370392B2 (enrdf_load_stackoverflow) 1991-11-07

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