JPS59126776A - Sputtering method - Google Patents

Abstract

PURPOSE:To improve a sputtering rate and to provide magnetic anisotropy to a formed film by forming the film on the surface of an object to be coated facing a target in the stage of generating a uniform magnetic field in the direction orthogonal to a sputtering electric field. CONSTITUTION:A permanent magnet 10 is fixed by means of a fittings 9 on a holder 11 in a chamber 7 of a sputtering device which is kept evacuated, and an object 1 to be coated is placed thereon. On the other hand, a target 2 held by a holder 4 is installed oppositely to the object 1. An earth shield 3 attached to said target holder 4 and the chamber 7 are grounded via an insulating material 5. A sputtering electric field is generated in this state between the two holders 4 and 11 by a power source 8, by which sputtering is accomplished. A magnetic field component in an arrow A direction orthogonal to the electric field is generated on the surface of the object 1 by the magnet 10, by which the sputtering rate is improved and if the film to be formed on the object 1 is a magnetic material, magnetic anisotropy is provided to the film formed thereon.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a sputtering method, and particularly to a sputtering method that is an effective means for improving the sputtering rate.

(b) Prior Art and Problems Conventionally, the method described in F is known as a method using a magnetic field to improve the sputtering rate.

(1) Magnetron sputtering method A magnet is placed on the back side of the target to generate a magnetic field on the target surface, and this magnetic field controls the movement of Ar ions.

(2) Convenience Shoulder Sputter

That is, in the method (1) above, the sputtering rate can be controlled by the applied power between the target and the object to be deposited, and in the method (2) above, the sputtering rate can be controlled by the product of the applied power and the focusing coil current, but the sputtering rate can be controlled by the product of the applied power and the focusing coil current. It was impossible to control the magnetic properties of the film.0 (0) Purpose of the Invention The purpose of the present invention is to improve the sputtering rate and improve the sputtering rate on the object to be deposited, in order to eliminate the above-mentioned conventional drawbacks. An object of the present invention is to provide a sputtering method capable of imparting magnetic anisotropy to a produced film when the produced film is a magnetic material.

(4) Structure of the Invention In order to achieve the above object, the sputtering method of the present invention provides means for generating a magnetic field with a uniform magnetic field component in the direction perpendicular to the sputtering electric field on the surface of the object to be film-formed. It is possible to provide complete magnetic anisotropy.

The present invention will now be described in detail using Examples.

(e) Embodiment of the Invention FIG. 1 is a diagram showing the configuration of an embodiment of a sputtering apparatus to which the present invention is applied, and FIGS. 2 and 3 are explanatory diagrams showing the principle of the present invention. l is the object to be film-formed, 2 is the target, 3 is the earth shield, 4 is the target hoshida, 5 is the insulating material, 6 is the gasket, 7 is the chamber, 8 is the power supply, 9 is the fixing metal fittings, lo
is a permanent magnet, and 11 is a substrate holder.

In the sputtering apparatus, a get holder 4 that supports the object 1 to be film-formed is placed opposite to the get holder 4.1.
1 is fixed to the chamber 7 via the packing 6, and the history V
A vacuum source 8, which maintains a vacuum inside the chamber 7, is a power supply source for generating an electric field (hereinafter referred to as a scattering electric field) between the two hoses 11. Chamber 7 and earth shield 3 are grounded.

In this embodiment, the permanent magnet 10 is entirely fixed on the substrate holder 11 using a fixing metal 9 . The object 1 to be film-formed is placed on this permanent magnet Q and sputtering is performed. This permanent magnet 10 has a flat plate type cross section, and generates a magnetic field with uniform magnetic field strength in the plane direction.
0, there are magnetic field components in the vertical direction (parallel to the stopper electric field) at both ends, but the magnetic field components in the vertical direction are almost zero near the center. Therefore, as shown in FIG. 2, a uniform horizontal magnetic field is generated in the direction of the arrow in the central part (the part to be evaporated 12) where the object 1 to be deposited is placed.

A sputtering electric field is thus formed between both holders 4 and 11, and an inert gas (for example, argon Ar) is injected from an injection port (not shown) in the chamber 7. As a result, particles constituting the target 2 separated by the collision of the argon Ar ions (hereinafter referred to as scatter particles) are deposited on the object 1 to be film-formed.

During the vapor deposition of the sputtered particles, the uniform magnetic field generated by the permanent magnet 10 imparts magnetic anisotropy to the resulting film. When attached to the object 1, the sputtered particles and the adhesion-resistant part are at a high temperature PK. Therefore, in the process of the sputtered particles adhering to the object 1 to be film-formed and being cooled, magnetic anisotropy is induced such that the easy axis is the direction of the magnetic field applied to the object 1 to be film-formed. Therefore, if a constant magnetic field is always applied to the object 1 to be film-formed, magnetic anisotropy will be continuously imparted to the film adhering to the object 1 to be film-formed.

As described in FIG. 3 and the related explanation, in order to generate a uniform magnetic field on the object l, a permanent magnet 10 is required.
The magnetic field component in the vertical direction (same direction as the electric field) is large at the outer periphery, and the vertical magnetic field component at the center is small. For example, the uniform magnetic field in the center is 40
In the case of 0 Gauθθ, the vertical component of the outer circumference is 1200
It is approximately Gausθ. This vertical component of the magnetic field also improves the sputtering rate.

It has also been found that the sputtering rate when the uniform magnetic field is provided is improved by about 5 degrees of variation compared to the case without a magnetic field.

FIGS. 4 and 5 show the relationship between sputtering conditions and coercive force, and are based on experiments conducted without forming a uniform magnetic field on the surface of the object to be deposited (no magnetic field).

In both figures, the vertical axis shows the coercive force He (Oersted; 0θ) of the film formed on the object to be film-formed, and the horizontal axis in Fig. 4 shows the surface temperature Ts (sputtering temperature) of the object to be film-formed. 7 The horizontal axis in Fig. 5 indicates the pressure of argon gas sealed in the chamber (mTorr), and the solid lines (a) and (e) in both figures indicate l 50 W and 350 W, respectively. , shows the relationship when a power of 400 W is applied.

As is clear from both figures, the sputtering conditions necessary to reduce the holding force HQ are: applied power 1350W, sputtering temperature 3.
It is desirable to maintain the temperature at oO~350°C and argon pressure at 1' or more than 10 mTorr.

FIG. 6 is a diagram showing experimental results when the sputtering shown in this example was performed using the above-mentioned sputtering method. In the figure, the vertical axis shows the total magnetic permeability μ of the produced film measured by a frequency signal of 1 MH2, and the horizontal axis shows the composition of the target. That is, 81 NL-Fe refers to an alloy in which 81 nicks nN1 and the remaining 19 nicks are iron F. Similarly, 84N1-fFe indicates an alloy containing 84% and 16% of nickel and iron, respectively. In the figure, the white circle value represents the average value of the actual measured values (solid line portion). That is, it can be seen that by using 81 to 84% Nitsukushi alloy as the target, a film having an appropriate magnetic permeability μ can be produced.

(f) Effects of the Invention As detailed above, according to the present invention, it is possible to increase the number of objects to be coated. Furthermore, if the produced film is made of a magnetic material, it may be possible to give the produced film anisotropy as well.

[Brief explanation of the drawing]

Fig. 1 is a diagram showing the configuration of a sputtering apparatus to which the present invention is fully applied, Figs. 2 and 3 are explanatory diagrams showing the principle of the present invention, and Figs. 4 and 5 are sputtering conditions and coercive force of the produced film. FIG. 6 is a diagram showing the measured magnetic permeability values when sputtering was performed according to the present example while changing the target composition. 1 is the object to be deposited, 2 is the target, 4 is the process 1 is the holder, 1 is the part 11 Figure 1 Figure 2 Figure 3 Figure 4 (mTtrrr)

Claims (1)

[Claims] In a film formation method in which a sputtering electric field is generated between a target and an object to be film-formed, and a film is formed on the object to be film-formed, a sputtering electric field perpendicular to the sputtering electric field is formed on the surface of the object to be film-formed that faces the target. A sputtering method characterized in that a magnetic field generating means for generating a magnetic field with a uniform magnetic field component in a direction is provided, and the film is formed by the magnetic field generating means generating a uniform magnetic field on the surface of the object to be film-formed. Method.