JPS59125622A - Electron beam exposure method - Google Patents

Abstract

PURPOSE:To reduce the quantity of pattern data memorized largely by previously memorizing only the position of the starting point of a pattern and pattern size to a memory as the pattern data, automatically dividing the pattern into sub-fields on the basis of the data and exposing the sub-fields when the pattern larger than the sub-fields is drawn. CONSTITUTION:In the pattern PT, the whole sub-field F1 using the starting point A1(X1, Y1) of pattern itself as the starting point is painted out by a sub-deflector 13 first, the center of the sub-field is moved to the center C2 of the sub- field F2 using A2 as the starting point by a main deflector 12, and the whole sub-field F2 is painted out. In the sub-field F5, the sub-field in special size (Xs', Ys') is painted out in place of the sub-field (Xs, Ys) in standard size. The pattern PT is drawn completely by similarly painting out the pattern up to the sub- field F16.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical field of the invention The present invention relates to an electron beam exposure method, and in particular to a method of providing a starting point and the size of a pattern as pattern data and automatically dividing the pattern into subfields for exposure. The present invention relates to an electron beam exposure method using a t% characteristic.

(2) Background of the technology Is it possible to pattern IC circuits etc. at high speed using electron beam exposure equipment? Conventionally, a dual deflection method of a main field and a subfield has been used for drawing methods 1 to 1. An electron beam exposure apparatus using this dual deflection method is shown in FIG.

In the apparatus of FIG. 1, the electron beam BM is connected to the cathode 1
, generated by grid 2 and anode 3.

The generated electron beam BM has a rectangular beam cross section by the first slit 4, is focused by a lens 5, and passes through a slit deflector 6.

Furthermore, the electron beam BM passes through the second slit 7 after being deflected by the slit deflector 6. Depending on the amount of deflection of the slit deflector 6, the first slit 4 and the second slit
Slits 7 M! The size of the ll1 matching portion, that is, the size of the beam cross section is adjusted. Furthermore, electron beam B
M passes through lenses 8 and 9 and aperture 1011'
i: The beam passes through the refocus lens 11 after more scattered beams have been removed. The electron beam BM that has passed through the refocus lens 11 is deflected by a main deflector 12 and a sub-deflector 13, and is irradiated onto a predetermined position on a dry plate 14. In the electron beam exposure apparatus shown in FIG. A coil is used as the deflector 12, and the deflection speed is slow - large deflection? can be done, sub-deflector 1
Parallel electrode plates are used as No. 3, and although the amount of deflection is small, it is possible to perform high-speed deflection. Therefore, the main deflector 12U-' can be used to deflect the child beam BM' (I: main field (e.g., 10mm x 10++u++ area), and the sub-deflector 13 can be used to deflect the child beam within the subfield (e.g., lOμm x 10μm area 9). The electron beam exposure apparatus shown in FIG.
When writing all the patterns in one main field, first, in the main field as shown in FIG. 2, for example, the electron beam is deflected by the main deflector 13 to the subfield located at the farthest corner. Next, all the patterns in that subfield are exposed using the subdeflectors 14. When exposure of all patterns in one subfield is completed, the main deflector 13 moves the electron beam to an adjacent subfield, and the subdeflector 13 exposes all the patterns in that subfield in a -1 manner. Thereafter, pattern exposure is performed for all subfields within the main field in the same manner.

(3) Prior art and problems In the conventional method of drawing a pattern using the above-mentioned dual-deflection electron beam exposure system, the main field position, subfield position, and pattern size within the subfield are recorded as pattern data. A method of storing the information in memory is used. By the way, if you try to draw a chicle pattern by multiplying the diagonal by 10 using this method, 1
If the area of one reticle is 100mm x 100+++m and the subfield is 100μ1XIUoμ, there are 106 subfields in total, 729.1m.
The pattern data for each reticle becomes enormous.

(4) Object of the Invention In view of the above-mentioned problems, an object of the present invention is that when drawing the entire pattern larger than a subfield, only the turn data is used as the pattern data, excluding the starting point position of the pattern.
How about storing it in memory? By automatically dividing the pattern into subfields and exposing them, the memory amount of turn data can be significantly reduced.

(5) Structure of the Invention In the present invention, main deflection means for specifying one sub-exposure field among a plurality of sub-exposure fields within the main exposure field, and a desired position within the specified sub-exposure field are provided. a sub-deflection means for deflecting the electron beam, a memory for storing reference position data in the main exposure field of a power pattern to be exposed and data on the size of the pattern, and a memory for storing data on the size of the pattern to be exposed from the memory; When the size of the pattern to be exposed is larger than the size of the sub-exposure field, the main deflection means sets the entire reference position as the starting point of the pattern within the size of the sub-exposure field. The remaining part of the pattern that is less than the size of the sub-exposure field is sequentially exposed with the sub-beams, and the remaining part of the pattern that is less than the size of the sub-exposure field is
Within a size smaller than a 4-dimensional field? Have you decided to use the Shinko beam for exposure? A characterized electron beam exposure method is provided.

(6) Practical Example of the Invention The entire electron beam exposure method as a practical example of the present invention will be described below. FIG. 3 shows an example of a pattern exposed by the method of the present invention. As the data of the pattern PT, the starting points of the pattern are X, Y.

and pattern size X2 + F2 are stored in memory.

Assuming the standard subfield size Xs + Ys (for example, Xs=・Ys=100ttm), X2>Xs
, F2 > Ys. If the pattern PTK is fake, first the starting point Ah of the pattern itself (X+, Y+
) The entire sub-field F1 starting from k is filled in by the sub-deflector 13, and then the main deflector 12 moves the center of the sub-field to the center C2 of the sub-field F2 starting from A2, and the entire sub-field F2 is filled in. It will be done. Thereafter, subfees k MF 3, F 4, and F5 are filled in in the same manner. In subfield F5, instead of the standard size subfields (Xs, Ys), special size (X8'
, Ys) are filled in. Thereafter, the subfields are filled in in the same manner, and the drawing of the pattern PT is completed until subfield F16 is filled.

In the above operation, the center position of the main deflector @C,
If we take the starting point GZ fii A in the deflector and the thickness Sk of the subfield, then the number 0 is made up of two people CA, S As mentioned above, in the uninvented exposure method, 1w large @ 7fl pattern all 1〃own mountain j
-J- (J-easy pattern boot tuff) Memory content is reduced.

(7) Child fruit of the invention According to the present invention, dual) (11-way method I-column beam jfK f Rl? (In VC, give the pattern data to the starting point of the pattern and the size of the pattern? Since the pattern can be automatically divided into subfields by K, the amount of memory for pattern data can be reduced.

[Brief explanation of the drawing]

Figure 1 shows a typical dual-deflection electron beam exposure)
FIG. 2 is a diagram illustrating the conventional dual-deflection electron beam exposure method; FIG. 3 is a diagram illustrating the entire electron beam Gg optical method according to the present invention. (Explanation of signs) '-do, 2 nigerid, 3 near node, 4.7:
Slit, 5, 8, 9: lens, 6: slit deflector, lO near birch, 11: 17 focus lens, 12: main deflector, 13: sub-deflector, 14: dry plate. Patent applicant: Fujitsu Ltd. Patent agent: Patent attorney -1zu Ki Akira, patent attorney Nishi Kazu'4 2u Patent attorney Yen 1) Sachi Riki, patent attorney Akira Yamaguchi Figure 1, Figure 2

Claims (1)

[Scope of Claims] Main deflection means for specifying one sub-exposure field among multiple sub-exposure fields within the main exposure field, and a main deflection means for directing the entire electron beam to a desired position within the specified sub-exposure field. a sub-deflecting means for deflecting; a memory deflector for storing reference position data of the pattern to be exposed in the main exposure field and data of the size of the pattern; reading data of the pattern to be exposed from the memory; If the size of the pattern to be exposed is smaller than the size of the sub-exposure field, the main deflection means turns the reference position as the starting point of the entire direction. The area within the size of the sub-exposure field is sequentially exposed with an electron beam, and the remaining portion of the pattern that is less than the size of the sub-exposure field is exposed with the entire electron beam within the size of the sub-exposure field. Characteristic electron beam exposure method.