JPS59121878A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS59121878A
JPS59121878A JP22740882A JP22740882A JPS59121878A JP S59121878 A JPS59121878 A JP S59121878A JP 22740882 A JP22740882 A JP 22740882A JP 22740882 A JP22740882 A JP 22740882A JP S59121878 A JPS59121878 A JP S59121878A
Authority
JP
Japan
Prior art keywords
film
diffused layer
selectively
forming
oxidized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22740882A
Other languages
Japanese (ja)
Inventor
Masaki Sato
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22740882A priority Critical patent/JPS59121878A/en
Publication of JPS59121878A publication Critical patent/JPS59121878A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To accurately form doping layers of two types in a self-aligning manner by forming a diffused layer with a film pattern formed on an insulating film as a mask, selectively forming metal or metal semicondutor compound film or semiconductor on the surface which includes at least side face of the film pattern, and then forming a diffused layer with the grown film formed thereafter and the film pattern region as masks. CONSTITUTION:A field oxidized film 302, a gate oxidized film 303, and a gate electrode in which a polycrystalline silicon film 304 is selectively removed, are formed on a P type silicon substrate 301, As ions are then implanted with a polycrystalline silicon film 304' as a mask to form a low density diffused layer 305. A tungsten film 307 is formed selectively on the surface of the exposed film 304', As ions are implanted with the films 304' and 307 as masks, and source and drain diffused layer 306 is formed. Then, after the film 307 is removed, a silicon oxidized film or the like is accumulated, an impurity is activated, a desired contacting hole is opened, and aluminum wirings are formed.
JP22740882A 1982-12-28 1982-12-28 Manufacture of semiconductor device Pending JPS59121878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22740882A JPS59121878A (en) 1982-12-28 1982-12-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22740882A JPS59121878A (en) 1982-12-28 1982-12-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS59121878A true JPS59121878A (en) 1984-07-14

Family

ID=16860361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22740882A Pending JPS59121878A (en) 1982-12-28 1982-12-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS59121878A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149473A (en) * 1984-08-17 1986-03-11 Mitsubishi Electric Corp Manufacture of polycide gate mos ic
JPS61241974A (en) * 1985-04-18 1986-10-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61259574A (en) * 1985-04-12 1986-11-17 Gen Electric Hybrid extension drain construction for reducing effect of hot electron
JPS62283667A (en) * 1986-05-31 1987-12-09 Toshiba Corp Manufacture of semiconductor device
JPS63124571A (en) * 1986-11-14 1988-05-28 Nec Corp Manufacture of semiconductor device
US7559095B2 (en) 2004-11-24 2009-07-14 Reihi Tei Thermotherapic sauna apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197774A (en) * 1982-05-13 1983-11-17 Nec Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197774A (en) * 1982-05-13 1983-11-17 Nec Corp Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149473A (en) * 1984-08-17 1986-03-11 Mitsubishi Electric Corp Manufacture of polycide gate mos ic
JPS61259574A (en) * 1985-04-12 1986-11-17 Gen Electric Hybrid extension drain construction for reducing effect of hot electron
JPS61241974A (en) * 1985-04-18 1986-10-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0519979B2 (en) * 1985-04-18 1993-03-18 Mitsubishi Electric Corp
JPS62283667A (en) * 1986-05-31 1987-12-09 Toshiba Corp Manufacture of semiconductor device
JPS63124571A (en) * 1986-11-14 1988-05-28 Nec Corp Manufacture of semiconductor device
US7559095B2 (en) 2004-11-24 2009-07-14 Reihi Tei Thermotherapic sauna apparatus

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