JPS59116375A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS59116375A
JPS59116375A JP20793982A JP20793982A JPS59116375A JP S59116375 A JPS59116375 A JP S59116375A JP 20793982 A JP20793982 A JP 20793982A JP 20793982 A JP20793982 A JP 20793982A JP S59116375 A JPS59116375 A JP S59116375A
Authority
JP
Japan
Prior art keywords
magnetic field
target
magnet body
substrate
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20793982A
Other languages
Japanese (ja)
Inventor
Mizuo Edamura
枝村 瑞郎
Kyoji Kajikawa
梶川 享志
Koji Okamoto
康治 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kawasaki Heavy Industries Ltd
Kawasaki Motors Ltd
Original Assignee
Kawasaki Heavy Industries Ltd
Kawasaki Jukogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Heavy Industries Ltd, Kawasaki Jukogyo KK filed Critical Kawasaki Heavy Industries Ltd
Priority to JP20793982A priority Critical patent/JPS59116375A/en
Publication of JPS59116375A publication Critical patent/JPS59116375A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To provide a titled device which stabilizes magnetron discharge and improves the efficiency in forming a film by the constitution wherein a bar-shaped magnet body disposed alternately with permanent magnets and yokes each having an oblique cylindrical shape is rotated to form an averaged magnetic field near the target. CONSTITUTION:A bar-shaped magnet body 10 and an electromagnet 29 are provided on the inside and outside of a vacuum vessel 2 provided with an evacuation device 6, thereby forming a magnetic field forming means. A target 3 disposed in the vessel 2 and a substrate 4 are connected to the cathode and anode of a power source device 8. A sputtering device 1 which impresses a voltage between the target and substrate to induce magnetron discharge and forms a sputtering film on the substrate 4 is thus formed. The above-mentioned magnet body 10 in such sputtering device is constituted by disposing alternately permanent magnets 19 and yokes 20 each having an oblique cylindrical shape, and is rotated by a rotating device 11 connected, via a revolving shaft 18, to said magnet body. The intensity of the magnetic field formed by a magnetic field forming means 9 is thus changed and averaged with time whereby the electric discharge is stabilized and the sputtering film having a uniform thickness distribution is formed.

Description

【発明の詳細な説明】 本発明は、磁界中の放電を利用して被膜を形成するスパ
ックリング装置の改良に1関するものである0 従来より、磁界を利用して電子を磁界に閉じ込めて放電
効率を回」ニし、高落度のプラズマを発生させて被膜形
成速度を増大し、かつ基板温度の−1−昇を抑制するマ
グネトロン放電を4り用したスパッタリング装置が提案
されている。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a spackling device that forms a film by using discharge in a magnetic field. A sputtering apparatus using four magnetron discharges has been proposed, which increases efficiency, generates high-drop plasma to increase the film formation rate, and suppresses the rise in substrate temperature.

その−例として、ターゲット内に両端部がN。As an example, both ends are N in the target.

S(販となるような7個の永久磁石(あるいは電磁石)
を配し、また、真空装置外に電磁石を設け、ターゲット
近傍に磁界を発生させるようにしたものがある。しかる
に、上記構造のものでは、永久磁石(あるいは′電磁石
)の端部効果により端部のN 、 S 、1iQj近傍
の磁界が強く、中央部の磁界が弱くなることから、磁界
分布が不均一となる。その結果、ターゲット表面は不均
一なイオン衝撃により局部的な侵蝕消耗を受け、ターゲ
ットの前向はその局部的な侵蝕量によって決定され、高
価なターゲットの有効利用ができない問題がある。
S (7 permanent magnets (or electromagnets) for sale
There are also systems in which an electromagnet is installed outside the vacuum device to generate a magnetic field near the target. However, in the structure described above, due to the edge effect of the permanent magnet (or 'electromagnet), the magnetic field near the edges N, S, 1iQj is strong, and the magnetic field in the center is weak, resulting in non-uniform magnetic field distribution. Become. As a result, the target surface is locally eroded and consumed by non-uniform ion bombardment, and the forward direction of the target is determined by the amount of local erosion, resulting in the problem that the expensive target cannot be used effectively.

また、上記磁界分布によるターゲットの侵蝕度の差は、
ターゲットに対向した基板側のスパッタリング被膜の厚
さ分布に影響を与え、侵蝕度の大きい部分は強いイオン
衝撃を受けるため侵蝕度の大きい部分に対向した位置は
形成される被膜も厚く、全体として被膜厚さが不均一と
なる不具合を有している。
In addition, the difference in the degree of erosion of the target due to the above magnetic field distribution is
This affects the thickness distribution of the sputtered film on the substrate side facing the target, and the parts with a high degree of erosion receive strong ion bombardment, so the film formed is thicker at the position facing the part with a high degree of erosion, and the film as a whole The problem is that the thickness is uneven.

−に記聞:―点を1リゾ消するものさして、数個の永久
磁右(あるいは電磁石)をその1販11−を交互にして
配列し、端部効果を分散し、スパッタリンク被膜の厚さ
分布の均一化を図るこaが考えられるが、基本的には磁
界分布の不均一性は晟IEされず、この1磁界分イj]
iこノぐきp影響を受けるターゲットの侵蝕消耗につい
ては、その不均一性は解消されずに残るものである。
-Record: -In order to eliminate one point, several permanent magnets (or electromagnets) are arranged alternately to disperse the edge effect and reduce the thickness of the sputter link film. It is possible to try to make the distribution uniform, but basically the non-uniformity of the magnetic field distribution is not affected by IE, and this one magnetic field is
As for the erosion and wear and tear of the target affected by I-Konoguki-P, the non-uniformity remains unresolved.

一方、上記のように、磁界をAす用した放電の安定性は
、磁界の強さに依存し、磁界が強いほどスパッタリンク
かflわれる真空反(/θ−4〜1O−2Torr)の
広い範囲において放電を安定して発生させることができ
る。
On the other hand, as mentioned above, the stability of discharge using a magnetic field A depends on the strength of the magnetic field, and the stronger the magnetic field, the wider the vacuum reaction (/θ-4 to 1O-2 Torr) where the sputter link is flapped. Discharge can be stably generated within this range.

そこ−C1本発明はかかる点に艦み、クーケノト表面を
均一つ強さてイオシ種j寧し、ターゲットが均一に消耗
するように磁界分布の平均化を図るとともに、基板−1
−に形成されるスパッタリング破膜1/、)厚さ分布を
均一にし、がっ、永久磁石から発生ずる磁界を有効に作
用させて大きfj磁界強さを得てマクイ用・ロン放電を
安定させ、被膜形成効率の向」二を図ったスパッタリン
グ装置を提供することを目的としている。
Therefore, the present invention addresses this point, and aims to uniformly and strongly inject the surface of the substrate, to average the magnetic field distribution so that the target is uniformly consumed, and to
-The sputtering fractured film formed on 1/) makes the thickness distribution uniform, and the magnetic field generated from the permanent magnet acts effectively to obtain a large fj magnetic field strength and stabilize the Macui/Ron discharge. It is an object of the present invention to provide a sputtering apparatus that improves film formation efficiency.

上記目的を達成する本発明は、真空容器内に配設された
ターゲットとこのターゲットの近傍に磁界を形成する磁
界形成手段とを備えたスパッタリンク装置において、上
記磁界形成手段は、斜円筒状の永久磁石と鉄心とを交互
に配設した棒状磁石体を有するとともに、該棒状磁石体
を回転する回転装置を備えて1jす、磁界強さを時間的
に変動せしめて平均化するようにしたものである。
To achieve the above object, the present invention provides a sputter link apparatus comprising a target disposed in a vacuum container and a magnetic field forming means for forming a magnetic field in the vicinity of the target, wherein the magnetic field forming means has an oblique cylindrical shape. It has a bar-shaped magnet body in which permanent magnets and iron cores are arranged alternately, and is equipped with a rotating device that rotates the bar-shaped magnet body, so that the magnetic field strength is varied over time and is averaged. It is.

シ、下、本発明の実施例を図面に沿って説明する。Embodiments of the present invention will be described below with reference to the drawings.

第1図はマグネトロン型スパンタリンクsa i ノ基
本構成を示し、2は真空容器で、該真空容器2は底部の
ベースプレー)2aと上部の炉体2bとからなり、この
真空容器2の中心部には円筒状ターケノl−3が配設さ
れる一方、該クーゲット6の外周部に被処理物とfJる
基板4か電極5を介して自己設されている。もちろん、
上5己ターゲット6と電極5とは互いに絶縁され、また
、真空容器2とも絶縁されて配設されている。
FIG. 1 shows the basic structure of a magnetron-type spantal link sa i, in which 2 is a vacuum vessel, and the vacuum vessel 2 consists of a base plate 2a at the bottom and a furnace body 2b at the top. A cylindrical tube 1-3 is disposed in the section, while a substrate 4, which is connected to the object to be processed, is disposed on the outer periphery of the cuget 6 via an electrode 5. of course,
The upper target 6 and the electrode 5 are arranged so as to be insulated from each other and from the vacuum vessel 2.

また、上記真空容器2には、A空容器2を所定の真空1
見(/θ−’〜1O−2TorrJ  に排気スル真空
ボシブ等を備えた排気装置6、真空容器2内にAr、+
12.N2等の処理ガスを導入するガス導入装置67、
ターゲット6を陰極、基板4を陽販として両者間に電圧
を印加する重分装置8かイ」設されている。
In addition, the vacuum container 2 has an A empty container 2 in a predetermined vacuum 1.
(/θ-' ~ 1O-2TorrJ) Exhaust device 6 equipped with exhaust through vacuum boss etc., Ar in vacuum vessel 2, +
12. a gas introduction device 67 for introducing a processing gas such as N2;
A superposition device 8 is provided which uses the target 6 as a cathode and the substrate 4 as a positive electrode and applies a voltage between them.

さら(こ、−に萬己真草容器21こは、ターゲット60
周辺に磁界を11ネ成する磁界形成手段9か付設されて
スパッタリンク装置1か構成されている。
Sara(ko, -ni Manki Shinso container 21 Koha, target 60
A sputter link device 1 is constructed by attaching magnetic field forming means 9 for forming a magnetic field around the periphery.

J二、記磁界形成手段9は、ターゲット3の内周部に永
久イみ石による棒状磁石体10が配設され、さらに、こ
の外状磁石体10を回転する回転装置11が設けられ、
一方、真空容器2外に電磁石29が配設されている− j−記スバノクリシク装置1は、ターゲット6周辺に磁
界を形成した状聾にも−いて、クーゲット6と基板4と
の間に電(ツタ装造8によって電圧をFIJ加すると、
両者間の空間てb父N(マクネトロン放電)か光主し、
この放電によってカスがイオン化し、陽イオンが陰極で
あるターゲット6に衝突してターゲノ]・材料の金属原
子が飛び出し、基板4表面に付着してスパッタリンク被
膜を形成するものである。
J2. The magnetic field forming means 9 is provided with a bar-shaped magnet 10 made of a permanent stone on the inner circumference of the target 3, and further provided with a rotation device 11 for rotating the outer magnet 10.
On the other hand, the apparatus 1 in which an electromagnet 29 is disposed outside the vacuum vessel 2 is also in a state where a magnetic field is formed around the target 6, and an electric field is created between the target 6 and the substrate 4. When the voltage is applied by FIJ using the ivy fitting 8,
The space between the two is the father N (macnetron discharge) or the light source,
This discharge ionizes the residue, and the positive ions collide with the target 6, which is a cathode, and the metal atoms of the target material fly out and adhere to the surface of the substrate 4 to form a sputter link film.

第2図には、上記磁界形成手段9(第1図)の1や状磁
石体10および回転装置11の構造を示している。真空
容器2(第7図)のベースプレート2aに対し、取付は
フランジ12aを有する収納管12を−F方から貫通し
て配設し、この収納管12の取付はフランジ12aが支
持プレート16ととモlこ、締付はボルト14によって
ベースプレート2dの下面に固着され、取刊はフランジ
12aとベースプレー1・2aとの間は0リシグ15に
よって真空シールが行われる。
FIG. 2 shows the structure of the dovetail magnet 10 and rotating device 11 of the magnetic field forming means 9 (FIG. 1). The storage tube 12 having a flange 12a is installed to the base plate 2a of the vacuum container 2 (FIG. 7) by penetrating it from the -F direction. For tightening, the base plate 2d is fixed to the lower surface of the base plate 2d with bolts 14, and a vacuum seal is provided between the flange 12a and the base plates 1 and 2a using a seal 15.

」1記収納管12の外周下部には、ベースプレート2a
上に絶縁材による支持台16が配設される一方、該支持
台16」二に絶縁相による筒体17が収納管12を囲ん
で配設されるとともに、該筒体17の外周にはチタン、
クロム等の所望金属による回状のターゲット6が上記支
持台76よ−と装着されている。
"1. At the lower part of the outer periphery of the storage pipe 12, there is a base plate 2a.
A support base 16 made of an insulating material is disposed on the support base 16, while a cylinder body 17 made of an insulating material is disposed on the support base 16'' to surround the storage tube 12, and the outer periphery of the cylinder body 17 is made of titanium. ,
A circular target 6 made of a desired metal such as chromium is attached to the support base 76.

また、i’riJ記収梢冴12の下端部を閉塞する支持
プレー 1−13に、(’if 4ξ(IR石fイに1
0が回転自在に支持されている。この1杼状磁石1ト]
0は、管状の回転:iqt+ 1 sの−に一方、、’
lfl而部1面aの外周に、斜円筒状の1.u数の永久
磁(’j 19 (第3図参照うかその(散性を交qに
して配設され、この永久磁石79間に鉄]し・20かブ
i装されて父斤に’1’= ++2されて固定具21に
よって11・1定され、軸方間に連j売1月転するよう
に支持されている。上記回転+!Tll118の細径部
18a十端は収納層12の−に端内面1に設けられた軸
受22に嵌挿される一方、回転軸18の下部は鍔部18
bて支持プレー1−13.4=面に回転自在に支持され
、支持プレート16に配設された水シール体26て7−
ルされCいる。この回転軸18の下端は支持プし′−ト
16を貝通し、先端には回41i継手24か設置′べさ
れ、冷却イ(排4(W 25か接続されている。
In addition, in the support plate 1-13 that closes the lower end of the i'riJ record storage part 12, ('if 4ξ(IR stone fi 1
0 is rotatably supported. This one shuttle-shaped magnet]
0 is the tubular rotation: iqt+ 1 s-, whereas,'
An oblique cylindrical 1. U number of permanent magnets ('j 19 (see Figure 3) (arranged with dispersion of q and between these permanent magnets 79), and 20 or more magnets (iron) are placed in the father's cup. ' = ++2 and fixed at 11.1 by the fixture 21, and is supported so as to rotate continuously in the axial direction. - is fitted into the bearing 22 provided on the end inner surface 1, while the lower part of the rotating shaft 18 is inserted into the flange 18.
Water seal body 26 rotatably supported on the supporting plate 1-13.4 and disposed on the supporting plate 16;
There are some rules. The lower end of this rotary shaft 18 is passed through the supporting plate 16, and a rotary joint 24 is installed at the tip, and is connected to a cooling outlet 4 (W 25).

前記支持プレート16に開1]シた冷却水供給口13a
より供716された冷却水は、収納管12内を典−って
、回転軸18上端の排水D 13 cから回転l$!I
tl18内をt奇丁して冷却水排水′瞥25より流出す
るように構成され、陣状磁石体1Uを冷却して永久磁石
19が散型に伴う熱によって消磁するのを防止する。r
、[お、収用はフラノン12d゛と支持プレー ) 1
3との間は、水シール体60によってノールされている
A cooling water supply port 13a opened in the support plate 16
The cooling water supplied 716 is rotated through the storage pipe 12 and from the drain D13c at the upper end of the rotating shaft 18. I
It is configured such that the inside of the magnet 18 is tilted and flows out from the cooling water drainage port 25, thereby cooling the arrayed magnet body 1U and preventing the permanent magnet 19 from being demagnetized by the heat accompanying the dispersion. r
, [O, expropriation is Furanone 12d゛ and supporting play) 1
A water seal body 60 is provided between the water seal body 3 and the water seal body 60 .

また、−J、2棒状磁石体10を回転作動する回転装β
11は、回転11’lll 1 gの下れj3外周に被
、駆動南東26が固着される一方、この被2+y、動歯
車26に16合ってモータ27(第1図参照ンによって
回転s IJJされる鴨1B)J歯車28が設けられて
fSる。
-J, a rotating device β that rotates the two rod-shaped magnets 10;
11 is mounted on the outer periphery of the rotation 11'llll 1 g, and the driving southeast 26 is fixed, while the drive 26 is fitted to the moving gear 26 and rotated by the motor 27 (see Fig. 1). 1B) J gear 28 is provided.

一方、」−2捧状磁石体10にkける永久磁石19と鉄
ノし・20の厚さをどのようにするかは工夫か必要で、
また、その;頃きaについては′Sり図jに示すように
設りるのが好ましい。ずflわち、第7図への回転位置
から半回転(78′θ度9回転したのがf;グ図Bに示
す状態であり、その際?こ、永久磁石19の上面の低点
a と−F面の高点すとが同一円周上を回転し、下方の
永久7F8石19の」二面高点aと上方の永久磁石19
の下面の低点b とが1「眉−円周」二を回転するよう
に形成したものである。
On the other hand, it is necessary to devise the thickness of the permanent magnet 19 and the iron knife 20 in the -2 magnet body 10.
Also, it is preferable to set the point a as shown in the diagram j. In other words, a half turn (9 turns of 78'θ degrees) from the rotational position shown in FIG. 7 is the state shown in FIG. The high points on the -F and -F surfaces rotate on the same circumference, and the two-face high point a of the lower permanent 7F8 stone 19 and the upper permanent magnet 19
It is formed so that the low point b on the lower surface of is rotated by 1 ``eyebrow-circumference'' 2.

−1−2弟グ図の(荷造の拌状磁石1本1aの回転?こ
より、その磁界の強さおよびターゲット6の侵蝕度の分
イ1jは第5図に;1クシ、実線は第7図への回転位I
Iばにkいてその右111j方に11多成される磁界の
強さとターケノト乙の浸蝕度を示すものであり、また、
破線は回帰に第7図Bの回転位置においてその右側方に
形成されるiid界の強さとターゲット6の浸蝕度を示
すものであり、両者はその強弱分布を全く逆にしており
、Cれを連続回転させると所定時間内におけろ平均的磁
界強さは、一点鎖線で示すように均一「ヒされ、これに
伴いターゲット6の匿蝕度(イオン衝撃の強さ)も平均
化されて、基板4上にllj成されるスパッタリング被
膜の厚さ分布か一定となる。) なお、上記永久磁石19の大きさ、数、1頃つ、゛[角
度/f等は、」二記弔り図に示すような(昔造に限定さ
れることなく任、Ciこ設計変更可能であるが、数(分
割数]か多くなると磁界が弱くなる1141題かある。
-1-2 The rotation of one stirring-shaped magnet 1a of the packaging? From this, the strength of its magnetic field and the degree of erosion of the target 6 1j are shown in Figure 5; Rotation position I to figure
It shows the strength of the magnetic field generated 11 times to the right of I and the degree of erosion of the hole, and also,
The broken line indicates the strength of the IID field formed on the right side of the rotation position in Figure 7B in the regression and the degree of erosion of target 6, and the strength distribution of both is completely opposite, and C When the target 6 is continuously rotated, the average magnetic field strength within a predetermined period of time is uniformly blown, as shown by the dashed line, and the erodibility (strength of ion bombardment) of the target 6 is also averaged accordingly. (The thickness distribution of the sputtered film formed on the substrate 4 is constant.) The size, number, angle/f, etc. of the permanent magnets 19 are as shown in the second memorial diagram. As shown in (1141), the design is not limited to old models and can be changed at any time, but as the number (number of divisions) increases, the magnetic field becomes weaker.

また、企失ノI>2LJのAAイ斗ごしては透磁率の高
いものほど有効である。
In addition, when it comes to AA I>2LJ, the higher the magnetic permeability, the more effective it is.

ここて、参考に、第7図および第5図の永久磁石19の
形態とそれに伴う磁界強さと侵蝕度との関係に対し、第
乙図および第7図には7つの永久磁石Mの場合を示し、
磁界の分布は磁石Mの端部効果により両端部で強く不均
一とI5つている。これに応じ、ターゲット6のイオン
衝撃の強さずfjわち侵蝕度の分布は、両端部で浅く、
中央部で深ぐ ね「 る〇 また、第2図および第2図には複数個の永久磁石Mを極
性を交互にして配置した場合を示し、この場合も永久磁
石Mの端部効果により4D界分布およびターゲット6の
侵蝕度の分布は不均一に14る。
For reference, in contrast to the relationship between the form of the permanent magnet 19 and the associated magnetic field strength and degree of erosion in FIGS. 7 and 5, FIGS. show,
The distribution of the magnetic field is strongly non-uniform at both ends due to the end effect of the magnet M. Accordingly, the distribution of the strength of the ion bombardment fj of the target 6, that is, the degree of erosion, is shallow at both ends;
In addition, Fig. 2 and Fig. 2 show the case where a plurality of permanent magnets M are arranged with alternating polarity, and in this case also, due to the end effect of the permanent magnets M, 4D The field distribution and the distribution of the degree of erosion of the target 6 are non-uniform.

さらに、第70図および第1/図は、第2図の永久磁石
M間に鉄心Cを配置したもので、これによるさ鉄心Cの
部分の磁界が、これを有しない場合の永久磁石M端部よ
り強(’rjす、かつイオン衝撃も強く、ターゲット6
の侵蝕1式も大きいものである。
Furthermore, FIG. 70 and FIG. 1/FIG. 70 show the case where the iron core C is placed between the permanent magnets M in FIG. The target 6
Equation 1 of erosion is also large.

以」二説明したように、本発明スパッタリンク装11q
によれは、ターゲット近傍に磁界を形成する磁界形成手
段を、斜円筒状の永久磁石と鉄!シ・とを交互に配設し
た棒状磁石体を設けると七もに、この棒状磁石体を回転
する回転装置7を設けて構成し、磁界強さを時間的に変
−Jせしめて平均化し、ターゲットのf! m aを均
一化してターゲットの表面が均等に消耗するようにして
高価なターゲットの有効利用を図って処jjJjコスト
を低減するこ古がてきる○ また、永久磁石と鉄ノし・とを交互に配設したことによ
り永久磁石の磁界を有効に作用させて強い磁界を発生さ
せることができ、この磁界強さに依存するマクネトロン
放電の安定性を同上し、磁界の強さが大きいほど放電電
圧が低く、かつ高電流密度の放心が得られ、被膜形成効
率の向上を図ることができ、自IJ記スパノタリシグ被
膜の均一化と相俟って優れた利点を有するものである。
As explained below, the sputter link device 11q of the present invention
The magnetic field forming means that forms the magnetic field near the target is made of oblique cylindrical permanent magnets and iron! When a bar-shaped magnet body in which A and J are arranged alternately is provided, a rotating device 7 is provided to rotate this bar-shaped magnet body, and the magnetic field strength is varied over time and averaged. Target f! It is becoming old to reduce processing costs by making the surface of the target uniform and making the surface of the target wear evenly, making effective use of expensive targets. The magnetic field of the permanent magnet can be effectively used to generate a strong magnetic field. It is possible to obtain an eccentricity with a low current density and a high current density, and it is possible to improve the film formation efficiency, which has excellent advantages in combination with the uniformity of the Spanotalisig film described in IJ.

【図面の簡単な説明】[Brief explanation of the drawing]

第7図ないし第5図は本発明の実施18様を例示し、第
7図はスパッタリンク装置の基本構成図、第2図はター
ゲットおよび棒状磁石体周辺構造を示す縦断面図、第3
図は永久磁石の斜視図、第グ図A、Bは棒状磁石体の回
転位1筺を示す説明図、第5図は回転位置の変動に対沁
した磁界強さおよびターゲットの侵蝕度の分布を示す曲
線図、第3図は参考例の永久磁石を示す説明図、第7図
は第3図における磁界強さおよびターゲットの侵蝕度の
分布を示す曲線図、第2図は他の参考例の永久磁石を示
す説明図、第2図は第2図における磁界強さおよびター
ゲットの侵蝕度の分布を示す曲線図、第70図はさらに
他の参考例の永久磁石を示す説明図、第1/図は第70
図における磁界強さおよびターゲットの侵蝕度の分布を
示す曲線図である。 1・・・・スパッタリング装置、2・・・・・・真空容
器、6・・・・・ターゲット、4・・・・・基板、6・
・・・・・排気装置、7・・・・・・ガス導入装置、8
・・・・・電源装置、9・・・・・・磁界形成手段、1
0・・・・棒状磁石体、11゛°・°°゛回転装置、1
2・・・・・収納管、18・・・・・・回転軸、19・
・・永久磁石、20・・・・鉄心 乍    県 (ン  ’J  乏  (ン リ 手続補正書 昭和59年2月1日 特許庁長官若杉和夫 殿 1 事件の表示 n(1和57年特許願第207939号2 発明の名称 スパッタリング装置 3 補正をする者 事件との関係 特許出願人 住所 兵庫県神戸市中央区東用崎町3丁目1@1号名称
 (097)  川崎重]二業株式会社代表者 長谷用
  J1e浩 4代理人 郵便番号 530 居所 大阪府大阪市北区西天満4丁目4番18号梅ケ枝
中央ビル (自発補正) 6 補正の対象 (1)明m書の特許請求の範囲の欄 (2)明細書の発明の詳細な説明の欄 (3)明細書の図面の簡単な説明の欄 7 補正の内容 (1)特許請求の範囲を別紙の通りに補正する。 (2)明細書第4頁第7行、第7頁第7行〜第8行、第
8頁第13行、第9頁第20行、第10頁第15行、同
頁第16行、第11頁第2行、同頁第10行および第1
2頁第20行の「鉄心」を「継鉄」に訂正する。 8 添イ」書類の目録 (1)補正後の特許請求の範囲の全文を記載した書面 
 1通補正後の特許請求の範囲の全文を記載した書面(
1)  真空容器内に配設されたターゲラ1−とこのタ
ーゲラ1への近傍に磁界を形成する磁界形成手段とを備
えたスパッタリング装置において、ト記磁界形成手段は
、斜円筒状の永久磁石と壓(友とを交互に配設した棒状
磁石体を有するとともに、該棒状磁石体を回転する回転
装置を備えてなり、磁界強さを時間的に変動せしめて平
均化することを特徴とするスパッタリング装置。
7 to 5 illustrate an 18th embodiment of the present invention, in which FIG. 7 is a basic configuration diagram of a sputter link device, FIG.
The figure is a perspective view of a permanent magnet, Figures A and B are explanatory diagrams showing one rotational position of a bar-shaped magnet body, and Figure 5 is a distribution of magnetic field strength and target erosion degree in response to changes in rotational position. Figure 3 is an explanatory diagram showing a permanent magnet of a reference example, Figure 7 is a curve diagram showing the distribution of magnetic field strength and target erosion degree in Figure 3, Figure 2 is another reference example. FIG. 2 is an explanatory diagram showing the distribution of magnetic field strength and target erosion degree in FIG. 2. FIG. 70 is an explanatory diagram showing a permanent magnet of another reference example. /Figure is number 70
FIG. 3 is a curve diagram showing the distribution of magnetic field strength and target erosion degree in the figure. DESCRIPTION OF SYMBOLS 1...Sputtering device, 2...Vacuum container, 6...Target, 4...Substrate, 6...
...Exhaust device, 7...Gas introduction device, 8
...Power supply device, 9...Magnetic field forming means, 1
0... Bar-shaped magnet body, 11゛°・°°゛rotating device, 1
2... Storage pipe, 18... Rotating shaft, 19...
...Permanent magnet, 20... Iron core 乍県(n'J 小(nri procedural amendment February 1, 1980) Mr. Kazuo Wakasugi, Commissioner of the Japan Patent Office 1 Indication of the case n (1981 Patent Application No. 207939 No. 2 Name of the invention Sputtering device 3 Relationship with the case of the person making the amendment Patent applicant address 3-1 Higashiyosaki-cho, Chuo-ku, Kobe, Hyogo Prefecture @ 1 Name (097) Kawasaki Ju] Representative of Nigyo Co., Ltd. For Hase J1e Ko4 Agent Postal code 530 Address Umegae Chuo Building, 4-4-18 Nishitenma, Kita-ku, Osaka-shi, Osaka Prefecture (voluntary amendment) 6 Subject of amendment (1) Scope of claims in the statement of claim (2) ) Column for detailed explanation of the invention in the specification (3) Column 7 for brief explanation of drawings in the specification Contents of amendment (1) The scope of claims is amended as shown in the attached sheet. (2) Specification No. 4 Page 7, line 7, page 7, lines 7 to 8, page 8, line 13, page 9, line 20, page 10, line 15, page 16, page 11, line 2, Same page, line 10 and 1
Correct "iron core" in line 20 of page 2 to "yoke." 8 Attachment A” List of documents (1) Document stating the entire text of the amended scope of claims
One document containing the entire text of the amended scope of claims (
1) In a sputtering apparatus equipped with a targeter 1 disposed in a vacuum container and a magnetic field forming means for forming a magnetic field in the vicinity of the targeter 1, the magnetic field forming means comprises an oblique cylindrical permanent magnet. A sputtering process characterized by having a bar-shaped magnet body in which circles are arranged alternately and a rotating device for rotating the bar-shaped magnet body, and which is characterized by temporally varying the magnetic field strength and averaging it. Device.

Claims (1)

【特許請求の範囲】[Claims] (1)  真空容器内(こ配設されたクーゲットさこの
ターゲットの近傍に磁界を形成する磁界形成手段とを備
えたり・バッタリング装置において、上記磁界形成手段
は、斜円筒状の永久磁石と鉄心きを父互に配設した棒状
磁石体を有するとともに、該仔状磁石体を回転する回転
装置を備えてfjす、磁界強さを時間的に斐仙仕しめて
平均化することを特徴とするスパックリング装置。
(1) In a battering apparatus, the magnetic field forming means includes an oblique cylindrical permanent magnet and an iron core. The present invention is characterized in that it has bar-shaped magnet bodies in which magnetic poles are arranged one after the other, and a rotating device that rotates the child-like magnet bodies, and that the magnetic field strength is temporally adjusted and averaged. Spackling equipment.
JP20793982A 1982-11-26 1982-11-26 Sputtering device Pending JPS59116375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20793982A JPS59116375A (en) 1982-11-26 1982-11-26 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20793982A JPS59116375A (en) 1982-11-26 1982-11-26 Sputtering device

Publications (1)

Publication Number Publication Date
JPS59116375A true JPS59116375A (en) 1984-07-05

Family

ID=16548034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20793982A Pending JPS59116375A (en) 1982-11-26 1982-11-26 Sputtering device

Country Status (1)

Country Link
JP (1) JPS59116375A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01104770A (en) * 1987-07-24 1989-04-21 Miba Gleitlager Ag Arrangement of rod-shaped magnetoelectric pipe or sputter cathode, sputtering method, apparatus for performing said method and tubular target
WO2007043476A1 (en) * 2005-10-07 2007-04-19 Tohoku University Magnetron sputtering apparatus
CN105986234A (en) * 2015-02-02 2016-10-05 上海法德机械设备有限公司 Vacuum cathode rotary permanent magnet dynamic magnetic field and assembling method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536282A (en) * 1976-07-07 1978-01-20 Philips Nv Spattering process and apparatus
JPS5746370U (en) * 1980-08-29 1982-03-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536282A (en) * 1976-07-07 1978-01-20 Philips Nv Spattering process and apparatus
JPS5746370U (en) * 1980-08-29 1982-03-15

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01104770A (en) * 1987-07-24 1989-04-21 Miba Gleitlager Ag Arrangement of rod-shaped magnetoelectric pipe or sputter cathode, sputtering method, apparatus for performing said method and tubular target
WO2007043476A1 (en) * 2005-10-07 2007-04-19 Tohoku University Magnetron sputtering apparatus
JP5147000B2 (en) * 2005-10-07 2013-02-20 国立大学法人東北大学 Magnetron sputtering equipment
CN105986234A (en) * 2015-02-02 2016-10-05 上海法德机械设备有限公司 Vacuum cathode rotary permanent magnet dynamic magnetic field and assembling method thereof

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