JPS5893222A - 半導体単結晶膜の製造方法 - Google Patents

半導体単結晶膜の製造方法

Info

Publication number
JPS5893222A
JPS5893222A JP19063081A JP19063081A JPS5893222A JP S5893222 A JPS5893222 A JP S5893222A JP 19063081 A JP19063081 A JP 19063081A JP 19063081 A JP19063081 A JP 19063081A JP S5893222 A JPS5893222 A JP S5893222A
Authority
JP
Japan
Prior art keywords
film
single crystal
silicon
insulating film
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19063081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0332208B2 (enrdf_load_stackoverflow
Inventor
Tomoyasu Inoue
井上　知泰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP19063081A priority Critical patent/JPS5893222A/ja
Publication of JPS5893222A publication Critical patent/JPS5893222A/ja
Publication of JPH0332208B2 publication Critical patent/JPH0332208B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP19063081A 1981-11-30 1981-11-30 半導体単結晶膜の製造方法 Granted JPS5893222A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19063081A JPS5893222A (ja) 1981-11-30 1981-11-30 半導体単結晶膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19063081A JPS5893222A (ja) 1981-11-30 1981-11-30 半導体単結晶膜の製造方法

Publications (2)

Publication Number Publication Date
JPS5893222A true JPS5893222A (ja) 1983-06-02
JPH0332208B2 JPH0332208B2 (enrdf_load_stackoverflow) 1991-05-10

Family

ID=16261259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19063081A Granted JPS5893222A (ja) 1981-11-30 1981-11-30 半導体単結晶膜の製造方法

Country Status (1)

Country Link
JP (1) JPS5893222A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246620A (ja) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JPS6163017A (ja) * 1984-09-04 1986-04-01 Agency Of Ind Science & Technol 半導体薄膜結晶層の製造方法
JPS6163018A (ja) * 1984-09-04 1986-04-01 Agency Of Ind Science & Technol Ｓｉ薄膜結晶層の製造方法
JPS61201414A (ja) * 1985-03-02 1986-09-06 Agency Of Ind Science & Technol シリコン単結晶層の製造方法
JPS61234088A (ja) * 1985-04-10 1986-10-18 Agency Of Ind Science & Technol レ−ザ光照射装置
JPH02138725A (ja) * 1988-06-28 1990-05-28 Ricoh Co Ltd 半導体基板の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130169A (en) * 1975-05-07 1976-11-12 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130169A (en) * 1975-05-07 1976-11-12 Nec Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246620A (ja) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JPS6163017A (ja) * 1984-09-04 1986-04-01 Agency Of Ind Science & Technol 半導体薄膜結晶層の製造方法
JPS6163018A (ja) * 1984-09-04 1986-04-01 Agency Of Ind Science & Technol Ｓｉ薄膜結晶層の製造方法
JPS61201414A (ja) * 1985-03-02 1986-09-06 Agency Of Ind Science & Technol シリコン単結晶層の製造方法
JPS61234088A (ja) * 1985-04-10 1986-10-18 Agency Of Ind Science & Technol レ−ザ光照射装置
JPH02138725A (ja) * 1988-06-28 1990-05-28 Ricoh Co Ltd 半導体基板の製造方法

Also Published As

Publication number Publication date
JPH0332208B2 (enrdf_load_stackoverflow) 1991-05-10

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