JPS5887746A - Correction of measured value of amount of incident beams in ion implantation device - Google Patents

Correction of measured value of amount of incident beams in ion implantation device

Info

Publication number
JPS5887746A
JPS5887746A JP18478081A JP18478081A JPS5887746A JP S5887746 A JPS5887746 A JP S5887746A JP 18478081 A JP18478081 A JP 18478081A JP 18478081 A JP18478081 A JP 18478081A JP S5887746 A JPS5887746 A JP S5887746A
Authority
JP
Japan
Prior art keywords
vacuum
amount
beam
measured
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18478081A
Inventor
Yoshitsugu Tsunenari
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP18478081A priority Critical patent/JPS5887746A/en
Publication of JPS5887746A publication Critical patent/JPS5887746A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Abstract

PURPOSE:To reduce the measurement error of the dose amount, and suppress the variation in the dose amount among batches by measuring the degree of vacuum near a beam line part or a beam-detecting Faraday cup, and performing correction operation on the beam current value on the basis of the measured value. CONSTITUTION:A vacuum gauge 6 is set to a Faraday part, and the measured value of a beam ampere meter 7 is corrected according to the measured value of the vacuum degree of the Faraday part. When neutral particles and ion beams with over two valences are produced due to the exchange of charges with the molecules of remaining gas, the equation of It=Im/(1-C.P) is satisfied. In the above equation, (It) represents the true amount of beams; (Im), the amount of beams measured by the beam ampere meter 7; (P), the degree of vacuum; and (C), a correction coefficient. Therefore, the true amount of beams, (It), can be known by performing operation according to both the beam current, (Im), measured by a Faraday cup and the degree of vacuum, (P), measured by the vacuum meter 6.
JP18478081A 1981-11-18 1981-11-18 Correction of measured value of amount of incident beams in ion implantation device Pending JPS5887746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18478081A JPS5887746A (en) 1981-11-18 1981-11-18 Correction of measured value of amount of incident beams in ion implantation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18478081A JPS5887746A (en) 1981-11-18 1981-11-18 Correction of measured value of amount of incident beams in ion implantation device

Publications (1)

Publication Number Publication Date
JPS5887746A true JPS5887746A (en) 1983-05-25

Family

ID=16159166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18478081A Pending JPS5887746A (en) 1981-11-18 1981-11-18 Correction of measured value of amount of incident beams in ion implantation device

Country Status (1)

Country Link
JP (1) JPS5887746A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6093748A (en) * 1983-10-27 1985-05-25 Matsushita Electronics Corp Ion beam corrector
JPS6116456A (en) * 1984-06-27 1986-01-24 Eaton Corp Method and device for controlling ion implantation
US4904902A (en) * 1987-04-16 1990-02-27 Sumitomo Eaton Nova Corporation Ion implanting system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6093748A (en) * 1983-10-27 1985-05-25 Matsushita Electronics Corp Ion beam corrector
JPS6116456A (en) * 1984-06-27 1986-01-24 Eaton Corp Method and device for controlling ion implantation
US4904902A (en) * 1987-04-16 1990-02-27 Sumitomo Eaton Nova Corporation Ion implanting system

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