JPS5881304A - Dielectric resonator - Google Patents

Dielectric resonator

Info

Publication number
JPS5881304A
JPS5881304A JP18075881A JP18075881A JPS5881304A JP S5881304 A JPS5881304 A JP S5881304A JP 18075881 A JP18075881 A JP 18075881A JP 18075881 A JP18075881 A JP 18075881A JP S5881304 A JPS5881304 A JP S5881304A
Authority
JP
Japan
Prior art keywords
dielectric resonator
insulating plate
conductor layer
dielectric
resonator element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18075881A
Other languages
Japanese (ja)
Other versions
JPS637684B2 (en
Inventor
Yoshio Shimoda
下田 義雄
Hisashi Tomimuro
冨室 久
Kota Konuki
小貫 光太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP18075881A priority Critical patent/JPS5881304A/en
Publication of JPS5881304A publication Critical patent/JPS5881304A/en
Publication of JPS637684B2 publication Critical patent/JPS637684B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00Resonators of the waveguide type
    • H01P7/10Dielectric resonators

Abstract

PURPOSE:To obtain a small-sized, low-priced dielectric resonator which has high operation stability by providing a conductor at a position selected depending upon the plate thickness of an insulator near a dielectric resonator element, and setting its resonance frequency to a desired value. CONSTITUTION:An insulating plate 7 is made of an insulator having a low dielectric constant than a dielectric resonator element 1, and has a conductor layer formed on one surface by vapor deposition, plating, etc. The amount of electromagnetic energy leaking out of the element 1 is controlled by shifting the closely-provided conductor layer 8 in position, and thus the resonance frequency is set to a desired value, so the desired frequency is obtained while observed, thereby placing the insulating plate 7 which is adequately thick on the element 1. The insulating plate 7 thick enough to obtain the desired characteristics is selected and fitted on the element 1 with an adhesive, etc.

Description

【発明の詳細な説明】 本発明は小型、安価でしかも高い安定度を有する誘電体
共振器に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dielectric resonator that is small, inexpensive, and has high stability.

従来、誘電体共振器素子をマイクロストリップライン等
の分布定数回路に電磁的に結合させて誘電体共振器回路
として使用する場合、第1図に示すように、誘電体共振
器素子11を絶縁物の支持台12の上に固定し基板13
の上に設けられたストリップライン14と電磁的に結合
させていた。この誘電体共振器回路の概略の共振周波数
は、誘電体共振器素子11の誘電率と幾何学的寸法で決
まるが、この誘電体共振器素子11は周波数可変機能を
持たないため、共振周波数の微調整は電磁界のシールド
効果を持つ金属ケース15の寸法を適切な値に設定しか
つ周波数調整用ネジ16を可変することによシ行なって
いた。このため誘電体共振器素子11のまわシに金属ケ
ース15を設けなければならず、共振器回路が大型にな
るという欠点があった。また、ネジ16と誘電体共振器
素子11との中心軸を所定の寸法内におさめるために高
い寸法精度が必要であシ、このため製造コストがかさむ
という欠点があった。また金属ケー215の寸法を適切
な値に設定しないと不要モードが発生し、所望の電気特
性が得られないという欠点があった。さらにこの誘電体
共振器回路では、金属ケース15の熱膨張によって共振
周波数が温度とともに変化するという欠点があった。
Conventionally, when using a dielectric resonator circuit by electromagnetically coupling a dielectric resonator element to a distributed constant circuit such as a microstrip line, as shown in FIG. The substrate 13 is fixed on the support stand 12 of
It was electromagnetically coupled to the strip line 14 provided above. The approximate resonant frequency of this dielectric resonator circuit is determined by the dielectric constant and geometric dimensions of the dielectric resonator element 11, but since this dielectric resonator element 11 does not have a frequency variable function, the resonant frequency Fine adjustment was performed by setting the dimensions of the metal case 15, which has an electromagnetic field shielding effect, to an appropriate value and by varying the frequency adjustment screw 16. For this reason, it is necessary to provide a metal case 15 around the dielectric resonator element 11, which has the drawback of increasing the size of the resonator circuit. Furthermore, high dimensional accuracy is required to keep the central axes of the screw 16 and the dielectric resonator element 11 within a predetermined dimension, which has the disadvantage of increasing manufacturing costs. Further, if the dimensions of the metal case 215 are not set to appropriate values, an unnecessary mode will occur and desired electrical characteristics cannot be obtained. Furthermore, this dielectric resonator circuit has the disadvantage that the resonant frequency changes with temperature due to thermal expansion of the metal case 15.

本発明は上記従来の欠点に鑑みてなされたものであり、
その目的は、小形、安価でしかも高い動作安定度を有す
る誘電体共振器を提供することにおる。
The present invention has been made in view of the above-mentioned conventional drawbacks,
The purpose is to provide a dielectric resonator that is small, inexpensive, and has high operational stability.

以下本発明の詳細を実施例によって説明する。The details of the present invention will be explained below with reference to Examples.

第2図は本発明の誘電体共振器の一実施例の構成を示す
斜視図でおり、1は誘電体共振器素子、7は絶縁板、8
はこの絶縁板7上に形成された導体層である。誘電体共
振器素子1は、比誘電率40〜100程度の比較的大き
な誘電率を有するチタン酸バリウム系等のセラミックの
塊から構成されておシ、この素子1の誘電率及び幾何学
的寸法がこの誘電体共振器の概略の共振周波数を決定す
る。
FIG. 2 is a perspective view showing the configuration of an embodiment of the dielectric resonator of the present invention, in which 1 is a dielectric resonator element, 7 is an insulating plate, and 8 is a dielectric resonator element.
is a conductor layer formed on this insulating plate 7. The dielectric resonator element 1 is composed of a lump of ceramic such as barium titanate having a relatively large dielectric constant of about 40 to 100. The dielectric constant and geometric dimensions of the element 1 are determines the approximate resonant frequency of this dielectric resonator.

絶縁板7は誘電体共振器素子1よシも低誘電率の5オ等
。絶お物から構、成さi?おシ、最終的よゆ接着剤や低
融点ガラス等の結合層を介して素子1の上面に固着され
る。この絶縁板70表面には、蒸着、メッキ等適宜な手
法によシ導体層8が形成されている。この導体層8の形
成方法の一例は、まず絶縁板7の表面上に厚み200A
(20+%I@)程度のニクロム層を真空蒸着し、さら
にこの上に厚み5ooo、Z程度のAm層を蒸着し、最
後にこの上に電解メッキによシ厚み5pwm程度のAm
層を形成するものである。なおこの場合のニクロム層は
、絶縁板7に対する導体層8間の付着強度を高めるため
の下地の機能を果すものであシ、この層の厚みは共振器
のQの低下を防ぐため極力小さな値に設定される。
The insulating plate 7 has a low dielectric constant, such as 5-ohm, as well as the dielectric resonator element 1. Composed of all the best things? Finally, it is fixed to the upper surface of the element 1 via a bonding layer such as adhesive or low melting point glass. A conductor layer 8 is formed on the surface of the insulating plate 70 by an appropriate method such as vapor deposition or plating. An example of a method for forming the conductor layer 8 is to first deposit a layer of 200 Å thick on the surface of the insulating plate 7.
A nichrome layer of about (20+%I@) is vacuum-deposited, then an Am layer of about 500 mm thick and Z is vapor-deposited on top of this, and finally an Am layer of about 5 pwm thick is electrolytically plated on top of this.
It forms a layer. Note that the nichrome layer in this case functions as a base to increase the adhesion strength between the conductor layer 8 and the insulating plate 7, and the thickness of this layer is kept as small as possible to prevent a decrease in the Q of the resonator. is set to

このように構成した誘電体共振器において、共振周波数
は近似的に誘電体共振器素子1の誘電率と幾何学的寸法
で決定される。このとき電磁エネルギのほとんどは誘電
率の高い誘電体共振器素子1の内部に存在するが、その
一部は誘電体共振器素子10外部に洩れている。外部に
洩れ出す電磁エネルギの量は、誘電体共振器素子1の近
傍に導体層8を置きこの導体層8の位置を変えることに
よって制御することができる。導体層8は電磁エネルギ
の洩れ出しを制御するためのものであシ、所定厚みの絶
縁板7は、導体層8を素子1から所定距離だけ離間させ
て保持するためのスペーサとしての機能を果す。絶縁板
7の材料としては、この誘電体共振器のQを高めるうえ
で石英等の高周波損失が小さいものが望ましい。誘電体
共振器素子1の外部に洩れる電磁エネルギの量は絶縁板
7の厚み、すなわち導体層8の位置に依存するので、第
2図のように構成した誘電体共振器において、その共振
周波数は導体層8を付した絶縁板7の厚みを変えること
により調整することができる。
In the dielectric resonator configured in this manner, the resonant frequency is approximately determined by the dielectric constant and geometric dimensions of the dielectric resonator element 1. At this time, most of the electromagnetic energy exists inside the dielectric resonator element 1 having a high dielectric constant, but a part of it leaks to the outside of the dielectric resonator element 10. The amount of electromagnetic energy leaking to the outside can be controlled by placing a conductor layer 8 near the dielectric resonator element 1 and changing the position of the conductor layer 8. The conductor layer 8 is for controlling the leakage of electromagnetic energy, and the insulating plate 7 having a predetermined thickness functions as a spacer for holding the conductor layer 8 at a predetermined distance from the element 1. . As the material for the insulating plate 7, a material with low high frequency loss such as quartz is desirable in order to increase the Q of this dielectric resonator. Since the amount of electromagnetic energy leaking to the outside of the dielectric resonator element 1 depends on the thickness of the insulating plate 7, that is, the position of the conductor layer 8, in the dielectric resonator configured as shown in FIG. This can be adjusted by changing the thickness of the insulating plate 7 provided with the conductor layer 8.

具体的には、厚みの異なる絶縁板7を数種類用意してお
き第3図示の回路において誘電体共振器の共振周波数を
観測しながら、所望の共振周波数が得られるように適切
表厚みの絶縁板7を誘電体共振器素子1上に載置し、所
゛望の特性を与える厚みの絶縁板7を選択したのちこれ
を接着剤等を用いて素子1上に取付けるようにすれに、
絶縁板7の厚さに対応した階段的表共振周波数調整を行
なうことができる。絶縁板7の厚みを数多く用意してお
けば、はとんど連続的に共振周波数調整を行なうことが
できる。なお、本実施例では誘電体共振器素子1および
絶縁板7の断面形状を円形としているが他の形状でも同
様の作用効果が奏される。
Specifically, several types of insulating plates 7 with different thicknesses are prepared, and while observing the resonant frequency of the dielectric resonator in the circuit shown in FIG. 7 is placed on the dielectric resonator element 1, and after selecting an insulating plate 7 having a thickness that provides the desired characteristics, this is attached onto the element 1 using adhesive or the like.
Stepwise surface resonance frequency adjustment corresponding to the thickness of the insulating plate 7 can be performed. By preparing the insulating plates 7 with a large number of thicknesses, the resonant frequency can be adjusted almost continuously. In this embodiment, the cross-sectional shapes of the dielectric resonator element 1 and the insulating plate 7 are circular, but the same effects can be obtained even with other shapes.

第4図は本発明の他の実施例の構成を示す斜視図である
。本図中第2図と同一の参照符号を付した要素は第2図
に関し既に説明した要素と同一の要素であシ、これにつ
いての重複した説明を要しないであろう。この実施例に
おいては、導体層8が絶縁板7の全表面上にではなくそ
の周辺部にのみ形成されている。誘電体共振器素子1の
外部に洩れる電磁エネルギの量は導体層8の面積に依存
する。したがって、この共振器を第5図示のような回路
に組込んで電気特性を観測しながらレーザトリ々ング等
によって導体層8を適切な面積だけ除去すれば、その面
積に対応して誘電体共振器素子1から外部に洩れる電磁
エネルギ量を調整することができ、その結果この誘電体
共振器の共振周波数を所望の値に設定することができる
。本実施例では導体層8の除去部分を円形としているが
、他の形状でも同様の作用・効果が奏される。
FIG. 4 is a perspective view showing the structure of another embodiment of the present invention. Elements in this figure with the same reference numerals as those in FIG. 2 are the same elements as those already described in connection with FIG. 2, and no redundant explanation will be necessary. In this embodiment, the conductor layer 8 is not formed over the entire surface of the insulating plate 7 but only around its periphery. The amount of electromagnetic energy leaking to the outside of the dielectric resonator element 1 depends on the area of the conductor layer 8. Therefore, by incorporating this resonator into a circuit as shown in Figure 5 and removing an appropriate area of the conductor layer 8 by laser triangulation while observing the electrical characteristics, a dielectric resonator can be formed corresponding to that area. The amount of electromagnetic energy leaking to the outside from the element 1 can be adjusted, and as a result, the resonant frequency of this dielectric resonator can be set to a desired value. In this embodiment, the removed portion of the conductor layer 8 is circular, but other shapes can provide similar effects and effects.

第6図は第2図に示した誘電体共振器を用いて第3図に
示した誘電体共振器回路を構成したときの共振周波数調
整の具体例である。共振周波数は周波数は約10−変化
する。なお、第6図は誘電体共振器素子の寸法を直径7
寓町厚さ2.8mmとし、絶縁板として石英を用いてそ
0寸法を直径11samとしたときの例でおる。
FIG. 6 shows a specific example of resonant frequency adjustment when the dielectric resonator circuit shown in FIG. 3 is constructed using the dielectric resonator shown in FIG. 2. The resonant frequency varies in frequency by approximately 10-. In addition, Figure 6 shows the dimensions of the dielectric resonator element with a diameter of 7.
This is an example in which the thickness is 2.8 mm, quartz is used as the insulating plate, and the zero dimension is 11 sam in diameter.

第7図は、第4図に示した誘電体共振器を用いて第5図
に示した誘電体共振器回路を構成したとたがい低下する
。なお、第7図は誘電体共振器素子の寸法を直径7mm
、厚さ2.8mmとし、絶縁板7として石英を用い、そ
の寸法を直径7++atm、厚さ0.−寓、1′1 としたときの例である。
In FIG. 7, the voltage decreases when the dielectric resonator circuit shown in FIG. 5 is constructed using the dielectric resonator shown in FIG. 4. In addition, Figure 7 shows the dimensions of the dielectric resonator element with a diameter of 7 mm.
, thickness is 2.8 mm, quartz is used as the insulating plate 7, and its dimensions are 7++ atm in diameter and 0.5 atm in thickness. - This is an example when it is set as 1'1.

上述した実施例においては誘電体共振器素子の頂面上に
絶縁板を装着したが、この素子の周囲に漏洩する電磁エ
ネルギーはほぼ等方的であるから、絶縁板を装着すべき
面は上述した頂面に限定されるものではなく、側面であ
ってもよいし、あるいは頂面と側面の双方であってもよ
い。また誘電体共振器素子を吊下げて保持する場合等に
おいては、素子の下面に絶縁板を装着することもできる
In the above embodiment, an insulating plate was attached to the top surface of the dielectric resonator element, but since the electromagnetic energy leaking around this element is almost isotropic, the surface to which the insulating plate should be attached is as described above. It is not limited to the top surface, but may be the side surface, or both the top surface and the side surface. Further, when the dielectric resonator element is hung and held, an insulating plate can be attached to the lower surface of the element.

また、絶縁板として石英を使用する例を説明したが、低
損失で低誘電率の誘電体材料であれば、テフロン等の商
品名で市販されている4ふつ化エチレンやセラミック等
適宜なものを使用することができる。
In addition, although we have explained an example of using quartz as an insulating plate, if it is a dielectric material with low loss and low permittivity, suitable materials such as tetrafluoroethylene or ceramic, which are commercially available under trade names such as Teflon, may be used. can be used.

以上詳細に説明したように、本発明は誘電体共振器素子
近傍の絶縁物の板厚で選択された位置に選択された面積
の導体を設置することによシ、こ    ゛の素子の周
辺に漏洩する電磁エネルギー量を調整し、これによって
誘電体共振器の共振周波数を所望の値に設定する構成で
あるから、従来の誘電体共振回路におけるように金属ケ
ースや周波数調整用ネジが不要となシ、この結果、回路
の小形化及び製造コストの低減が可能である。また、金
属ケースの寸法の不適切さに起因する不要モードの発生
の問題も伴わず、さらには金属ケースの熱膨張等に伴う
動作特性の変動も生ぜず、安定度が極めて向上するとい
う利点がある。
As explained in detail above, the present invention provides a conductor with a selected area at a position selected by the thickness of the insulator near the dielectric resonator element. The structure adjusts the amount of leaking electromagnetic energy and thereby sets the resonant frequency of the dielectric resonator to a desired value, so there is no need for a metal case or frequency adjustment screws as in conventional dielectric resonant circuits. As a result, it is possible to downsize the circuit and reduce manufacturing costs. In addition, there is no problem of unnecessary modes occurring due to inappropriate dimensions of the metal case, and there is no change in operating characteristics due to thermal expansion of the metal case, resulting in extremely improved stability. be.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の誘電体共振器回路の構成の一例を示す断
面図、第2図は本発明、の誘電体共振器の一実施例を示
す斜視図、第3図は第2図示の誘電体共振器を用いた誘
電体共振回路の構成の一例を示す断面図、第4図は本発
明の誘電体共振器の他の実施例を示す斜視図、第5図は
第4図示の誘電体共振器を用いた誘電体共振回路の構成
の一例を示す断面図、第6図は第3図示の共振回路Q特
性の一例を示す特性図、第7図は第5図の共振回路の特
性の一例を示す特性図。 1.11・・・誘電体共振器素子、7・・・絶縁物の板
、8・・・導体層、12・・・絶縁物の支持台、13・
・・基板、14・・・マイクロストリップライン、15
・・・金属ケース、16・・・周波数微調用ネジ。 特許出願人 日本電信電話公社 第1図 第21121        第3図 第4図       第5図 第61 絶縁板の厚さ (mm) 第 7111 導体除去部分の直径 (mm) 16−
FIG. 1 is a sectional view showing an example of the configuration of a conventional dielectric resonator circuit, FIG. 2 is a perspective view showing an embodiment of the dielectric resonator according to the present invention, and FIG. 3 is a dielectric resonator circuit shown in FIG. FIG. 4 is a cross-sectional view showing an example of the configuration of a dielectric resonator circuit using a body resonator, FIG. 4 is a perspective view showing another embodiment of the dielectric resonator of the present invention, and FIG. A cross-sectional view showing an example of the configuration of a dielectric resonant circuit using a resonator, FIG. 6 is a characteristic diagram showing an example of the Q characteristics of the resonant circuit shown in FIG. 3, and FIG. A characteristic diagram showing an example. 1.11... Dielectric resonator element, 7... Insulator plate, 8... Conductor layer, 12... Insulator support base, 13...
...Substrate, 14...Microstrip line, 15
...Metal case, 16...Screw for frequency fine adjustment. Patent applicant Nippon Telegraph and Telephone Public Corporation Figure 1 Figure 21121 Figure 3 Figure 4 Figure 5 Figure 61 Thickness of insulating plate (mm) No. 7111 Diameter of conductor removed portion (mm) 16-

Claims (1)

【特許請求の範囲】[Claims] 分布定数回路に電磁的に結合されて該分布定数回路に共
振特性を付与する誘電体共振器素子を備えた誘電体共振
器でおって、前記誘電体共振器素れておシ、該絶縁物の
板の前記誘電体共振器素子に接する面と対向する面上の
少くとも一部には所定面積の導体層が形成されておシ、
かつ前記絶縁物の板の所定厚み及び前記導体層の所定面
積は前記誘電体共振集子の誘電率及び寸法と共に該誘電
体共振器の共振周波数を定めるように選択されているこ
とを特徴とする誘電体共振器。
A dielectric resonator comprising a dielectric resonator element that is electromagnetically coupled to a distributed constant circuit to impart resonance characteristics to the distributed constant circuit, the dielectric resonator element comprising: an insulator; A conductor layer having a predetermined area is formed on at least a part of the surface of the plate opposite to the surface in contact with the dielectric resonator element,
and the predetermined thickness of the insulating plate and the predetermined area of the conductor layer are selected to determine the resonant frequency of the dielectric resonator together with the dielectric constant and dimensions of the dielectric resonator collector. dielectric resonator.
JP18075881A 1981-11-11 1981-11-11 Dielectric resonator Granted JPS5881304A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18075881A JPS5881304A (en) 1981-11-11 1981-11-11 Dielectric resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18075881A JPS5881304A (en) 1981-11-11 1981-11-11 Dielectric resonator

Publications (2)

Publication Number Publication Date
JPS5881304A true JPS5881304A (en) 1983-05-16
JPS637684B2 JPS637684B2 (en) 1988-02-18

Family

ID=16088798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18075881A Granted JPS5881304A (en) 1981-11-11 1981-11-11 Dielectric resonator

Country Status (1)

Country Link
JP (1) JPS5881304A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221913A (en) * 1990-09-26 1993-06-22 Matsushita Electric Industrial Co., Ltd. Dielectric resonator device with thin plate type dielectric heat-radiator
US5517203A (en) * 1994-05-11 1996-05-14 Space Systems/Loral, Inc. Dielectric resonator filter with coupling ring and antenna system formed therefrom
US8573171B2 (en) 2009-08-04 2013-11-05 Eaton Srl Lost motion valve control apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171367A (en) * 1982-12-27 1983-10-08 中村 憲司 Bag into which cosmetic is enclosed
WO2023026422A1 (en) 2021-08-26 2023-03-02 ヤマハロボティクスホールディングス株式会社 Ultrasonic cleaning method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221913A (en) * 1990-09-26 1993-06-22 Matsushita Electric Industrial Co., Ltd. Dielectric resonator device with thin plate type dielectric heat-radiator
US5517203A (en) * 1994-05-11 1996-05-14 Space Systems/Loral, Inc. Dielectric resonator filter with coupling ring and antenna system formed therefrom
US8573171B2 (en) 2009-08-04 2013-11-05 Eaton Srl Lost motion valve control apparatus

Also Published As

Publication number Publication date
JPS637684B2 (en) 1988-02-18

Similar Documents

Publication Publication Date Title
US4640756A (en) Method of making a piezoelectric shear wave resonator
US4719383A (en) Piezoelectric shear wave resonator and method of making same
US4580116A (en) Dielectric resonator
US5347423A (en) Trimmable composite multilayer capacitor and method
EP1716619B1 (en) Discrete voltage tunable resonator made of dielectric material
US4038167A (en) Method of forming a thin film capacitor
TW441146B (en) Tunable microwave devices
JPH1051204A (en) Planar filter
WO1990007801A1 (en) Temperature compensated stripline structure
US4454639A (en) Method for tuning piezoelectric resonators
JPH0356003B2 (en)
JPS5881304A (en) Dielectric resonator
JPS6310602B2 (en)
JP2916258B2 (en) Dielectric resonator
US7274277B2 (en) Ferroelectric devices and method relating thereto
US4477952A (en) Piezoelectric crystal electrodes and method of manufacture
US3636480A (en) Stable solid dielectric microwave resonator and separable waveguide means
JPS61167202A (en) Dielectric resonator
US2996610A (en) Composite tuned circuit
Ohji et al. New sputtering system for manufacturing ZnO thin‐film SAW Devices
KR20010029980A (en) Method for producing oriented piezoelectric films
JPS60211068A (en) Formation of film
JPS5856502A (en) High frequency resonator
JPS59182615A (en) Rectangular at-cut quartz oscillator
JPH08307114A (en) High frequency electromagnetic field coupling type thin film lamination electrode