JPS587880A - 電界効果半導体装置 - Google Patents

電界効果半導体装置

Info

Publication number
JPS587880A
JPS587880A JP56105877A JP10587781A JPS587880A JP S587880 A JPS587880 A JP S587880A JP 56105877 A JP56105877 A JP 56105877A JP 10587781 A JP10587781 A JP 10587781A JP S587880 A JPS587880 A JP S587880A
Authority
JP
Japan
Prior art keywords
conductive type
conductivity type
regions
parts
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56105877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244820B2 (enrdf_load_stackoverflow
Inventor
Keimei Mikoshiba
御子柴　啓明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56105877A priority Critical patent/JPS587880A/ja
Publication of JPS587880A publication Critical patent/JPS587880A/ja
Publication of JPS6244820B2 publication Critical patent/JPS6244820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56105877A 1981-07-07 1981-07-07 電界効果半導体装置 Granted JPS587880A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56105877A JPS587880A (ja) 1981-07-07 1981-07-07 電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105877A JPS587880A (ja) 1981-07-07 1981-07-07 電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS587880A true JPS587880A (ja) 1983-01-17
JPS6244820B2 JPS6244820B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=14419159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105877A Granted JPS587880A (ja) 1981-07-07 1981-07-07 電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS587880A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6297399U (enrdf_load_stackoverflow) * 1985-12-09 1987-06-20
KR100451758B1 (ko) * 1998-11-05 2004-12-17 주식회사 하이닉스반도체 에스오아이(soi)소자테스트용패턴및그형성방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128979A (en) * 1981-02-02 1982-08-10 Jido Keisoku Gijutsu Kenkiyuukumiai Manufacture of junction type field-effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128979A (en) * 1981-02-02 1982-08-10 Jido Keisoku Gijutsu Kenkiyuukumiai Manufacture of junction type field-effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6297399U (enrdf_load_stackoverflow) * 1985-12-09 1987-06-20
KR100451758B1 (ko) * 1998-11-05 2004-12-17 주식회사 하이닉스반도체 에스오아이(soi)소자테스트용패턴및그형성방법

Also Published As

Publication number Publication date
JPS6244820B2 (enrdf_load_stackoverflow) 1987-09-22

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