JPS5872922A - Production for liquid crystal display device - Google Patents
Production for liquid crystal display deviceInfo
- Publication number
- JPS5872922A JPS5872922A JP56173241A JP17324181A JPS5872922A JP S5872922 A JPS5872922 A JP S5872922A JP 56173241 A JP56173241 A JP 56173241A JP 17324181 A JP17324181 A JP 17324181A JP S5872922 A JPS5872922 A JP S5872922A
- Authority
- JP
- Japan
- Prior art keywords
- film
- liquid crystal
- display device
- crystal display
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は液晶表示装置の製造方法、さらに詳しくは液晶
表示装置の相対向する基板上の透明電極の製造方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a liquid crystal display device, and more particularly to a method of manufacturing transparent electrodes on opposing substrates of a liquid crystal display device.
従来、液晶表示装置の相対向する基板上の透明電極は、
主としてＩｎ−５ｎの酸化物（以下１．Ｔ、０と言う）
が使われている。Conventionally, transparent electrodes on opposing substrates of a liquid crystal display device are
Mainly In-5n oxide (hereinafter referred to as 1.T, 0)
is used.
上記１．Ｔ、Ｏの作製方法としては、電子ビームやスパ
ッタリングを利用する真空蒸着法や、Ｉｎ−８ｎ化合物
をコーティングして作製する化成法等がある。前者の真
空蒸着法に分類される電子ビーム蒸着は、１．Ｔ、Ｏを
蒸着試料として電子ビームで局部的に加熱して蒸発させ
、ガラス等の基板に蒸着して透明電極とするものであり
、またスパッタリングはＩｎをターゲットとしてＤＣス
パッタリングによりＩｎ膜を形成し、これを焼成して透
明電極とするか、１．Ｔ、０をターゲットとして高周波
反応性スパッタリングによって作製するものである。後
者の化成法はＩｎ−有機化合物をガラス基板にコーティ
ングし、その後に焼成して酸化された透明導電膜とする
。Above 1. Examples of methods for producing T and O include a vacuum evaporation method using an electron beam or sputtering, and a chemical conversion method in which they are produced by coating with an In-8n compound. Electron beam evaporation, which is classified as the former vacuum evaporation method, is 1. T and O are used as evaporation samples and locally heated with an electron beam to evaporate them, and then evaporated onto a substrate such as glass to form a transparent electrode.Sputtering also uses In as a target to form an In film by DC sputtering. , Either bake this to make a transparent electrode, or 1. It is manufactured by high frequency reactive sputtering using T,0 as a target. In the latter chemical conversion method, an In-organic compound is coated on a glass substrate and then fired to form an oxidized transparent conductive film.
本発明は上記真空蒸着法のスパッタリング法に属するも
のである。The present invention belongs to the sputtering method of the above-mentioned vacuum evaporation method.
ところで、上記従来の方法によって作製されたスパッタ
リングによる１、Ｔ、０膜は、１．Ｔ、Ｏの高い透明度
のため基板上に電極が形成されているか否かの視認が困
雛であるという欠点があった。By the way, the sputtering 1,T,0 film produced by the above conventional method has 1. Due to the high transparency of T and O, it is difficult to visually confirm whether or not electrodes are formed on the substrate.
そのため電極のパターン形成が支障な〈実施されたかど
うかの確認に時間がかかった。As a result, electrode pattern formation was a hindrance, and it took time to confirm whether it had been carried out.
本発明の液晶表示装置の製造方法は従来法の欠点を改良
するもので、電極パターンを形成する段階までＩｎ−５
ｎ金属体のまま加工処理を行い、電極パターン検査を容
易にすることを目的とする。The method for manufacturing a liquid crystal display device of the present invention improves the drawbacks of the conventional method, and uses In-5 up to the stage of forming electrode patterns.
The purpose is to process the n-metal body as it is and to facilitate electrode pattern inspection.
本発明の液晶表示装置の製造方法を以下に工程に従って
詳細に説明する。The method for manufacturing a liquid crystal display device of the present invention will be explained in detail below according to the steps.
第１図乃至第５図は各工程における断面図を示している
。第１図は使用するガラス基板１を洗浄する工程である
。第２図は前記ガラス基板１上にＩｎ−８ｎ（モル％で
Ｉｎが９０％、Ｓｎが１０％）膜２を２００〜３００Ａ
の膜厚にスパッタリングにて被着する工程である。第３
図の工程ではフォｉエツチング法若しくはスクリーン印
刷されたマスクを用いて前工程のＩｎ−５ｎ膜２を所望
電極形状にパターン形成する。この際上記金属膜の不要
部分がエツチング除去されるが、エツチングするための
エツチング液としては、従来のように酸化膜を・り氏ツ
チングする場合に比べて金属をエツチングすればよいた
め希薄な０．１〜０．２Ｎの塩酸水溶液を用いれば充分
であり、さらに処理操作も従来の５０℃、１〜２分に比
べて３０℃、３０秒で済ませることが可能である。上記
Ｉｎ−８ｎ膜２ａが被着されたガラス基板１は液晶セル
の基板とするため、第４図の工程において、ガラス基板
１及びパターン形成されたＩｎ−５ｎ膜２ａ上に配向処
理膜３を塗布する。配向処理膜３としては、酸化ケイ素
、ポリイミド樹脂等が用いられる。第５図の工程は、上
記配向処理膜３が塗布された基板１のアニーリング工程
で、温度幅を３１０乃至３５０℃に調整して ゛
加熱を行い、配向処理膜３を加熱処理する。この配向処
理膜３のアニーリング工程中に先に被着されたＩｎ−５
ｎ膜２ａの酸化処理を行う。その結果加熱処理済みの配
向処理膜３ａ及び１．Ｔ、０膜からなる透明電極４がガ
ラス基板上に作製される。1 to 5 show cross-sectional views at each step. FIG. 1 shows a process of cleaning a glass substrate 1 to be used. FIG. 2 shows an In-8n (90% In, 10% Sn) film 2 on the glass substrate 1 at a thickness of 200 to 300 A.
In this process, the film is deposited by sputtering to a film thickness of . Third
In the process shown in the figure, the In-5n film 2 in the previous process is patterned into a desired electrode shape using a photo etching method or a screen printed mask. At this time, the unnecessary portions of the metal film are removed by etching, but the etching solution used for etching is a dilute 0-etching solution because it only needs to etch the metal, compared to the conventional etching of an oxide film. It is sufficient to use an aqueous solution of .1 to 0.2N hydrochloric acid, and the processing operation can be completed in 30 seconds at 30°C, compared to the conventional 1 to 2 minutes at 50°C. Since the glass substrate 1 on which the In-8n film 2a is deposited is used as a substrate for a liquid crystal cell, an alignment treatment film 3 is formed on the glass substrate 1 and the patterned In-5n film 2a in the step shown in FIG. Apply. As the alignment film 3, silicon oxide, polyimide resin, etc. are used. The step shown in FIG. 5 is an annealing step for the substrate 1 coated with the alignment film 3, in which the temperature range is adjusted to 310 to 350° C. and heating is performed to heat the alignment film 3. During the annealing process of this alignment treatment film 3, the In-5 deposited previously
Oxidation treatment is performed on the n film 2a. As a result, the heat-treated alignment film 3a and 1. A transparent electrode 4 made of a T,0 film is fabricated on a glass substrate.
上記工程によって作製された電極基板は、可視域では透
過率８３％以上で抵抗値５００″１１０以下の特性を示
す。The electrode substrate produced by the above process exhibits characteristics of a transmittance of 83% or more and a resistance value of 500'' and 110 or less in the visible region.
第５図の工程以後の製造工程（シール剤印刷。Manufacturing process after the process shown in Figure 5 (sealant printing).
貼り合せ及び液晶注入等）は従来法と同様である。Bonding, liquid crystal injection, etc.) are the same as the conventional method.
以上のように本発明の液晶表示装置の製造方法によれば
、電極パターン検査において、膜がＩｎ−８ｎ膜である
ため茶かつ色を帯び視認検査が容易になり、又、エツチ
ング処理においてエツチング゛する対象が金属であるた
め、従来法の金属酸化物のエツチングでは４Ｎの塩酸水
溶液で５０℃２分も必要だったのが、上記構成の工程に
）で述べた如く希薄な塩酸水溶液、低温度及び短時間で
済み操作が簡単になり、さらにエツチング液が基板表面
に与える悪影響を緩和することができる。As described above, according to the method of manufacturing a liquid crystal display device of the present invention, in the electrode pattern inspection, since the film is an In-8n film, it has a brown color and is easy to visually inspect. Because the object to be etched is a metal, the conventional method of etching metal oxides required a 4N hydrochloric acid aqueous solution at 50°C for 2 minutes. Moreover, the operation is simple since it takes a short time, and furthermore, the adverse effects of the etching solution on the substrate surface can be alleviated.
第１図乃至第５図は、本発明の液晶表示装置の製造方法
の実施例を示す説明図である。
１・・・ガラス基板、２．２ａ−Ｉｎ−５ｎ膜、３，３
ａ、配向処理膜、４・・・透明電極。
代理人 弁理士 福 士 愛 彦
茅 Ｉ 図
・”６２図
第３図
ら１５４ 回
第 ５ 図1 to 5 are explanatory diagrams showing an embodiment of the method for manufacturing a liquid crystal display device of the present invention. 1...Glass substrate, 2.2a-In-5n film, 3,3
a, alignment treatment film, 4... transparent electrode. Agent Patent Attorney Fukushi Ai Hikokaya I Figure 62 Figure 3 et al. 154th Figure 5
Claims (1)
晶表示装置の製造方法において、スパッタリングによっ
てＩｎ−８ｎ膜を基板上に被着し、該Ｉｎ−５ｎ膜を所
望電極パターンにエツチング処理し、続いて前記基板及
びＩｎ−５ｎ膜上に配向膜を塗布し、該配向膜及びＩ
ｎ−５ｎ膜を加熱処理することでＩｎ−５ｎ膜を透明電
極化する、 ことを特徴とする液晶表示装置の製造方法。[Claims] 1. In a method for manufacturing a liquid crystal display device in which a metal oxide film is deposited on a substrate to form a transparent electrode film, an In-8n film is deposited on the substrate by sputtering, and the In-5n The film is etched into a desired electrode pattern, and then an alignment film is applied on the substrate and the In-5n film, and the alignment film and I
A method for manufacturing a liquid crystal display device, comprising: converting an In-5n film into a transparent electrode by heat-treating the n-5n film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56173241A JPS5872922A (en) | 1981-10-28 | 1981-10-28 | Production for liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56173241A JPS5872922A (en) | 1981-10-28 | 1981-10-28 | Production for liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5872922A true JPS5872922A (en) | 1983-05-02 |
| JPH0451808B2 JPH0451808B2 (en) | 1992-08-20 |
Family
ID=15956768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56173241A Granted JPS5872922A (en) | 1981-10-28 | 1981-10-28 | Production for liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5872922A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6319624A (en) * | 1986-07-11 | 1988-01-27 | Sharp Corp | Manufacturing method of liquid crystal display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5254458A (en) * | 1975-10-29 | 1977-05-02 | Casio Comput Co Ltd | Electrode substrate |
| JPS52107160U (en) * | 1977-02-10 | 1977-08-15 |
-
1981
- 1981-10-28 JP JP56173241A patent/JPS5872922A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5254458A (en) * | 1975-10-29 | 1977-05-02 | Casio Comput Co Ltd | Electrode substrate |
| JPS52107160U (en) * | 1977-02-10 | 1977-08-15 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6319624A (en) * | 1986-07-11 | 1988-01-27 | Sharp Corp | Manufacturing method of liquid crystal display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0451808B2 (en) | 1992-08-20 |
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