JPS5858760B2 - - Google Patents

Info

Publication number
JPS5858760B2
JPS5858760B2 JP8121381A JP8121381A JPS5858760B2 JP S5858760 B2 JPS5858760 B2 JP S5858760B2 JP 8121381 A JP8121381 A JP 8121381A JP 8121381 A JP8121381 A JP 8121381A JP S5858760 B2 JPS5858760 B2 JP S5858760B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8121381A
Other versions
JPS5730194A (en
Inventor
Tangu Uyu Fuiritsupu
Original Assignee
Intaanashonaru Bijinesu Mashiinzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US06/169,542 priority Critical patent/US4327424A/en
Application filed by Intaanashonaru Bijinesu Mashiinzu Corp filed Critical Intaanashonaru Bijinesu Mashiinzu Corp
Publication of JPS5730194A publication Critical patent/JPS5730194A/ja
Publication of JPS5858760B2 publication Critical patent/JPS5858760B2/ja
Application status is Expired legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
JP8121381A 1980-07-17 1981-05-29 Expired JPS5858760B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/169,542 US4327424A (en) 1980-07-17 1980-07-17 Read-only storage using enhancement-mode, depletion-mode or omitted gate field-effect transistors

Publications (2)

Publication Number Publication Date
JPS5730194A JPS5730194A (en) 1982-02-18
JPS5858760B2 true JPS5858760B2 (ja) 1983-12-27

Family

ID=22616134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8121381A Expired JPS5858760B2 (ja) 1980-07-17 1981-05-29

Country Status (4)

Country Link
US (1) US4327424A (ja)
EP (1) EP0044978B1 (ja)
JP (1) JPS5858760B2 (ja)
DE (1) DE3168764D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0327512Y2 (ja) * 1983-12-29 1991-06-13

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831677B2 (ja) * 1979-11-26 1983-07-07 Fujitsu Ltd
JPS5836504B2 (ja) * 1980-02-22 1983-08-09 Fujitsu Ltd
US4388702A (en) * 1981-08-21 1983-06-14 Mostek Corporation Multi-bit read only memory circuit
JPH0224412B2 (ja) * 1982-12-24 1990-05-29 Fujitsu Ltd
JPS60134089A (en) * 1983-12-19 1985-07-17 Masashi Kobayashi Production of regenerated pulp from laminate old paper mixedpapermaking stock material
US4599704A (en) * 1984-01-03 1986-07-08 Raytheon Company Read only memory circuit
JPS60173792A (en) * 1984-01-31 1985-09-07 Fujitsu Ltd Signal selecting circuit
US4631428A (en) * 1984-10-26 1986-12-23 International Business Machines Corporation Communication interface connecting binary logic unit through a trinary logic transmission channel
US4719600A (en) * 1986-02-18 1988-01-12 International Business Machines Corporation Sense circuit for multilevel storage system
US4914614A (en) * 1986-03-04 1990-04-03 Omron Tateisi Electronics Co. Multivalued ALU
US5227993A (en) * 1986-03-04 1993-07-13 Omron Tateisi Electronics Co. Multivalued ALU
US4805142A (en) * 1986-07-01 1989-02-14 International Business Machines Corporation Multiple ROM data state, read/write memory cell
US4852051A (en) * 1986-07-18 1989-07-25 The Toro Company Flexible irrigation controller
JPH0560199B2 (ja) * 1986-08-06 1993-09-01 Fujitsu Ltd
US5289406A (en) * 1990-08-28 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Read only memory for storing multi-data
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US6002614A (en) 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5471416A (en) * 1994-11-14 1995-11-28 National Semiconductor Corporation Method of programming a CMOS read only memory at the second metal layer in a two-metal process
KR100666185B1 (ko) * 2005-07-29 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3656117A (en) * 1971-02-05 1972-04-11 Ibm Ternary read-only memory
US4183093A (en) * 1975-09-04 1980-01-08 Hitachi, Ltd. Semiconductor integrated circuit device composed of insulated gate field-effect transistor
US4271421A (en) * 1977-01-26 1981-06-02 Texas Instruments Incorporated High density N-channel silicon gate read only memory
US4202044A (en) * 1978-06-13 1980-05-06 International Business Machines Corporation Quaternary FET read only memory
US4192014A (en) * 1978-11-20 1980-03-04 Ncr Corporation ROM memory cell with 2n FET channel widths
US4287570A (en) * 1979-06-01 1981-09-01 Intel Corporation Multiple bit read-only memory cell and its sense amplifier
FR2471086B1 (ja) * 1979-11-30 1984-03-16 Dassault Electronique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0327512Y2 (ja) * 1983-12-29 1991-06-13

Also Published As

Publication number Publication date
US4327424A (en) 1982-04-27
JPS5730194A (en) 1982-02-18
EP0044978B1 (en) 1985-02-06
EP0044978A1 (en) 1982-02-03
DE3168764D1 (de) 1985-03-21

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