JPS5856411A - レ−ザ・アニ−ル方法 - Google Patents

レ−ザ・アニ−ル方法

Info

Publication number
JPS5856411A
JPS5856411A JP56155512A JP15551281A JPS5856411A JP S5856411 A JPS5856411 A JP S5856411A JP 56155512 A JP56155512 A JP 56155512A JP 15551281 A JP15551281 A JP 15551281A JP S5856411 A JPS5856411 A JP S5856411A
Authority
JP
Japan
Prior art keywords
laser beam
reflection mirror
total reflection
polycrystalline silicon
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56155512A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0353771B2 (cs
Inventor
Seiichiro Kawamura
河村　誠一郎
Haruhisa Mori
森　治久
Tsutomu Ogawa
力 小川
Takashi Matsumoto
隆 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56155512A priority Critical patent/JPS5856411A/ja
Publication of JPS5856411A publication Critical patent/JPS5856411A/ja
Publication of JPH0353771B2 publication Critical patent/JPH0353771B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP56155512A 1981-09-30 1981-09-30 レ−ザ・アニ−ル方法 Granted JPS5856411A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56155512A JPS5856411A (ja) 1981-09-30 1981-09-30 レ−ザ・アニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56155512A JPS5856411A (ja) 1981-09-30 1981-09-30 レ−ザ・アニ−ル方法

Publications (2)

Publication Number Publication Date
JPS5856411A true JPS5856411A (ja) 1983-04-04
JPH0353771B2 JPH0353771B2 (cs) 1991-08-16

Family

ID=15607666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56155512A Granted JPS5856411A (ja) 1981-09-30 1981-09-30 レ−ザ・アニ−ル方法

Country Status (1)

Country Link
JP (1) JPS5856411A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151420A (ja) * 1983-02-17 1984-08-29 Agency Of Ind Science & Technol レ−ザアニ−ル装置
JPS59195819A (ja) * 1983-04-20 1984-11-07 Mitsubishi Electric Corp 半導体単結晶層の形成方法
JPH04364031A (ja) * 1991-06-10 1992-12-16 Ii & S:Kk レーザアニール方法およびレーザアニール装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1981 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151420A (ja) * 1983-02-17 1984-08-29 Agency Of Ind Science & Technol レ−ザアニ−ル装置
JPS59195819A (ja) * 1983-04-20 1984-11-07 Mitsubishi Electric Corp 半導体単結晶層の形成方法
JPH04364031A (ja) * 1991-06-10 1992-12-16 Ii & S:Kk レーザアニール方法およびレーザアニール装置

Also Published As

Publication number Publication date
JPH0353771B2 (cs) 1991-08-16

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