JPS5852349B2 - バケット・ブリゲ−ド・デイバイス - Google Patents
バケット・ブリゲ−ド・デイバイスInfo
- Publication number
- JPS5852349B2 JPS5852349B2 JP50022156A JP2215675A JPS5852349B2 JP S5852349 B2 JPS5852349 B2 JP S5852349B2 JP 50022156 A JP50022156 A JP 50022156A JP 2215675 A JP2215675 A JP 2215675A JP S5852349 B2 JPS5852349 B2 JP S5852349B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- electrode
- island
- brigade device
- packet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 230000000630 rising effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 108091006146 Channels Proteins 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50022156A JPS5852349B2 (ja) | 1975-02-20 | 1975-02-20 | バケット・ブリゲ−ド・デイバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50022156A JPS5852349B2 (ja) | 1975-02-20 | 1975-02-20 | バケット・ブリゲ−ド・デイバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5196292A JPS5196292A (enrdf_load_stackoverflow) | 1976-08-24 |
| JPS5852349B2 true JPS5852349B2 (ja) | 1983-11-22 |
Family
ID=12074970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50022156A Expired JPS5852349B2 (ja) | 1975-02-20 | 1975-02-20 | バケット・ブリゲ−ド・デイバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5852349B2 (enrdf_load_stackoverflow) |
-
1975
- 1975-02-20 JP JP50022156A patent/JPS5852349B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5196292A (enrdf_load_stackoverflow) | 1976-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS63296278A (ja) | Mos半導体装置 | |
| KR930009089A (ko) | 반도체 메모리 장치 및 그의 제조 방법 | |
| JPS61180475A (ja) | 電荷転送装置 | |
| US3796928A (en) | Semiconductor shift register | |
| JPS61198676A (ja) | 半導体集積回路装置 | |
| JPS5852349B2 (ja) | バケット・ブリゲ−ド・デイバイス | |
| JP2001257316A (ja) | 半導体装置 | |
| JPH02216871A (ja) | パワーmosfet | |
| JPS63310172A (ja) | 電荷転送装置 | |
| JPH0251279A (ja) | 縦型電界効果トランジスタ | |
| JPS5849641Y2 (ja) | 電荷結合素子 | |
| US4811063A (en) | JMOS transistor utilizing polysilicon sinks | |
| JP2917720B2 (ja) | 縦型電界効果トランジスタ | |
| JP3152290B2 (ja) | 容量素子を含む半導体装置の製造方法 | |
| JPH02184026A (ja) | 半導体装置の形成方法 | |
| JPH03155659A (ja) | 半導体装置 | |
| JPH05206485A (ja) | ダイオードブリッジ装置 | |
| KR19990010738A (ko) | 전력용 반도체소자 및 그 제조방법 | |
| JPH02272772A (ja) | 半導体装置 | |
| JPH0330439A (ja) | 電荷転送素子およびその製造方法 | |
| JPH03291945A (ja) | 電荷転送素子およびその製造方法 | |
| JPS5815271A (ja) | 電荷結合素子 | |
| JPH04267346A (ja) | 電荷結合素子及びその製造方法並びに駆動方法 | |
| JPH03177029A (ja) | 半導体装置 | |
| JPS5823484A (ja) | 半導体装置 |